Electronic structure of metal-semiconductor contacts:
Saved in:
| Format: | Book |
|---|---|
| Language: | Undetermined |
| Published: |
Milano
Ed. Joca Book u.a.
1990
|
| Edition: | 1. ed. |
| Series: | Perspectives in condensed matter physics
4. |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Literaturangaben |
| Physical Description: | XII, 292 S. Ill., zahlr. graph. Darst. |
| ISBN: | 0792308549 8816960043 |
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Record in the Search Index
| _version_ | 1804122064905306112 |
|---|---|
| adam_text | ELECTRONIC STRUCTURE OF METAL-SEMICONDUCTOR CONTACTS EDITED BY WINFRIED
MOENCH UNIVERSITAET DUISBURG /: KLUWER ACADEMIC PUBLISHERS JACA BOOK TABLE
OF CONTENTS W. MOENCH, ELECTRONIC STRUCTURE OF METAL-SEMICONDUCTOR
CONTACTS INTRODUCTION 1 1. PRELIMINARY REMARKS 1 2. CONCEPTUAL MODELS 4
2.1 SCHOTTKY-MOTT RULE 5 2.2 INTERFACE STATES 7 2.3 CONTINUUM OF
METAL-INDUCED GAP STATES 9 2.4 MIGS-PLUS-DEFECTS MODEL 11 2.5 CHARGE
TRANSFER AT INTERFACE 12 3. COMPUTATIONAL RESULTS 13 4. EXPERIMENTAL
DATA 15 4.1 CHEMICAL TREND OF THE SLOPE PARAMETERS 16 4.2 CORRELATIONS
WITH CHEMICAL REACTIVITY 17 4.3 EFFECTIVE WORK FUNCTION MODEL 17 4.4
MIGS-PLUS-DEFECT MODEL 18 4.5 DIRECT OBSERVATION OF THE CONTINUUM OF MIG
STATES 22 5. SURFACE-SCIENCE APPROACH TO SCHOTTKY CONTACTS 23 5.1 GROWTH
MODES OF NONREACTIVE METALS ON SEMICONDUCTORS 24 5.2 SURFACE
BAND-BENDING AS A FUNCTION OF METAL COVERAGE 25 5.3 UNIFIED DEFECT MODEL
27 6. CONCLUDING REMARKS 28 REFERENCES: REPRINTED ARTICLES 30 ADDITIONAL
REFERENCES 32 REPRINTED ARTICLES F. BRAUN, UEBER DIE STROMLEITUNG DURCH
SCHWEFELMETALLE, POGG. EX TABLE OF CONTENTS ANN. (1874) 37 W. SCHOTTKY
AND W. DEUTSCHMANN, ZUM MECHANISMUS DER RICHT WIRKUNG IN
KUPFEROXYDULGLEICHRICHTERN , PHYSIK. Z. (1929) 45 W. SCHOTTKY,
HALBLEITERTHEORIE DER SPERRSCHICHT , NATURWISSEN SCHAFTEN (1938) 53 N.
F. MOTT, NOTE ON THE CONTACT BETWEEN A METAL AND AN INSULATOR OR
SEMICONDUCTOR , PROC. CAMB. PHIL. SOC. (1938) 54 W. SCHOTTKY,
ABWEICHUNGEN VOM OHMSCHEN GESETZ IN HALBLEITERN, PHYSIK. Z. (1940) 59 J.
BARDEEN, SURFACE STATES AND RECTIFICATION AT A METAL SEMICON DUCTOR
CONTACT , PHYS. REV. (1947) 63 A. M. COWLEY AND S. M. SZE, SURFACE
STATES AND BARRIER HEIGHT OF METAL SEMICONDUCTOR SYSTEMS , J. APPL.
PHYS. (1965) 74 V. HEINE, THEORY OF SURFACE STATES , PHYS. REV. (1965)
83 S. KURTIN, T. C. MCGILL ET AL., FUNDAMENTAL TRANSITION IN THE
ELECTRONIC NATURE OF SOLIDS , PHYS. REV. LETT. (1969) 91 F. YNDURAIN,
DENSITY OF STATES AND BARRIER HEIGHT OF METAL-SI CONTACTS , J. PHYS. C:
SOLID STATE PHYSICS (1971) 95 E. LOUIS, F. YNDURAIN ET AL.,
METAL-SEMICONDUCTOR JUNCTIONS FOR (110) SURFACES OF ZINC-BLENDE COMPUNDS
, PHYS. REV. * (1976) 105 S. G. LOUIE AND M. L. COHEN, ELECTRONIC
STRUCTURE OF A METAL SEMICONDUCTOR INTERFACE , PHYS. REV. * (1976) 116
S. G. LOUIE, J. R. CHELIKOWSKY ET AL., IONICITY AND THE THEORY OF
SCHOTTKY BARRIERS , PHYS. REV. * (1977) 125 M. SCHLUETER, CHEMICAL TRENDS
IN METAL-SEMICONDUCTOR BARRIER HEIGHTS , PHYS. REV. * (1978) 134 L. J.
BRILLSON, TRANSITION IN SCHOTTKY BARRIER FORMATION WITH CHE MICAL
REACTIVITY , PHYS. REV. LETT. (1978) 138 W. E. SPICER, P. W. CHYE ET AL,
NEW AND UNIFIED MODEL FOR SCHOT TKY BARRIER AND III-V INSULATOR
INTERFACE STATES FORMATION , J. VAC. SEI. TECHNOL. (1979) 142 X TABLE OF
CONTENTS J. L. FREEOUF AND J. M. WOODALL, SCHOTTKY BARRIERS: AN
EFFECTIVE WORK FUNCTION MODEL , APPL. PHYS. LETT. (1981) 154 J. G.
CLABES, G. W. RUBLOFF ET AL., THE FORAMTION OF THE SCHOTTKY BARRIER AT
THE V/SI INTERFACE , J. VAC. SEI. TECHNOL. (1982) 157 R. T. TUNG, J. M.
GIBSON ET AL., FORMATION OF ULTRATHIN SINGLE- CRYSTAL SILICIDE FILMS ON
SI: SURFACE AND INTERFACIAL STABILIZATION OF SI-NISI2 EPITAXIAL
STRUCUTURES , PHYS. REV. LETT. (1983) 161 J. TERSOFF, SCHOTTKY BARRIER
HEIGHTS AND THE CONTINUUM OF GAP STATES , PHYS. REV. LETT. (1984) 165 R.
T. TUNG, SCHOTTKY BARRIER FORMATION AT SINGLE-CRYSTAL METAL
SEMICONDUCTOR INTERFACES , PHYS. REV. LETT. (1984) 169 D. E. SAVAGE AND
M. G. LAGALLY, REFLECTION HIGH-ENERGY ELECTRON DIFFRACTION STUDY OF THE
GROWTH OF IN ON GAAS (HO) AT DIFFERENT TEMPERATURES , J. VAC. SEI.
TECNOL. * (1986) 173 J. R. WALDROP, DIRECT VARIATION OF METAL-GAAS
SCHOTTKY BARRIER HEIGHT BY THE INFLUENCE OF INTERFACE S, SE AND ** ,
APPL. PHYS. LETT. (1985) 185 S. B. ZHANG, M. L. COHEN ET AL., INTERFACE
POTENTIAL CHANGES AND SCOTTKY BARRIERS , PHYS. REV. * (1985) 188 M.
LUDWIG AND G. HEYMANN, RUTHENIUM-INDUCED SURFACE STAES OF N-GAAS
SURFACES , J. VAC. SEI. TECHNOL. B. (1986) 191 I. P. BATRA AND S.
CIRACI, METALLIZATION AND SCOTTKY BARRIER FOR MATION , PHYS. REV. *
(1986) 199 W. MOENCH, ON THE PRESENT UNDERSTANDING OF SCHOTTKY CONTACTS ,
FESTKOERPERPROBLEME (1986) - 202 W. MOENCH, ROLE OF VIRTUAL GAP STATES AND
DEFECTS IN METAL SEMI CONDUCTOR CONTACTS , PHYS. REV. LETT. (1987) 224
K. STILES, A. KAHN ET AL., INITIAL STAGES OF SCHOTTKY BARRIER FOR
MATION: TEMPERATURE EFFECTS , J. VAC. SEI. TECHNOL. * (1987) 228 R. CAO,
K. MIYANO ET AL., KINETICS STUDY OF INITIAL STAGE BAND BENDING AT METAL
GAAS (110) INTERFACES , J. VAC. SEI. TECHNOL. * (1987) 233 XI TABLE OF
CONTENTS W. JACOB, E. BERTEL ET AL., THE SCHOTTKY CONTACT IN A
XE/METALIN TERFACE PROBED BY INVERSE PHOTOEMISSION , EUROPHYS. LETT.
(1987) 238 J. WERNER, A. F. J. LEVI ET AL., ORIGIN OF THE EXCESS
CAPACITANCE AT INTIMATE SCHOTTKY CONTACTS , PHYS. REV. LETT. (1988) 244
K. STILES AND A. KAHN, CORRELATION BETWEEN EP PINNING AND DE VELOPMENT
METALLIC CHARACTER IN AG OVERLAYERS ON GAAS (110) , PHYS. REV. LETT.
(1988) 248 W. J. KAISER AND L. D. BELL, DIRECT INVESTIGATION OF
SUBSURFACE INTERFACE ELECTRONIC STRUCTURE BY BALLISTIC-ELECTRON-EMISSION
MI CROSCOPY , PHYS. REV. LETT. (1988) 252 W. MOENCH, CHEMICAL TRENDS IN
SCHOTTKY BARRIERS: CHARGE TRANS FER INTO ADSORBATE INDUCED GAP STATES
AND DEFECTS , PHYS. REV. * (1988) 256 W. E. SPICER, Z. LILIENTAL-WEBER
ET AL., THE ADVANCED UNIFIED DE FECT MODEL FOR SCHOTTKY BARRIER
FORMATION , J. VAC. SEI. TECHNOL. * (1988) 260 R. LUDEKE, J. JEZEQUEL ET
AL,, SCREENING AND DELOCALIZATION EFFECTS IN SCHOTTKY BARRIER FORMATION,
J. VAC. SEI. TECHNOL. * (1988) 267 W. MOENCH, TIGHT-BINDING MODEL OF
SURFACE DONOR-STATES INDUCED BY METAL ADATOMS ON GAAS (110) SURFACES ,
EUROPHYS. LETT. (1988) 275 C. LAUBSCHAT, M. PRIETSCH ET AL., SWITCHING
OF BAND BENDING AT THE NONREACTIVE CSO X /GAAS (110) INTERFACE, PHYS.
REV. LETT. (1989) 280 P. N. FIRST, J. A. STROSCIO ET AL., METALLICITY
AND GAP STATES IN TUNNELING TO FE CLUSTERS ON GAAS (110), PHYS. REV.
LETT. (1989) 284 **
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| isbn | 0792308549 8816960043 |
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| physical | XII, 292 S. Ill., zahlr. graph. Darst. |
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| spelling | Electronic structure of metal-semiconductor contacts ed. by Winfried Mönch 1. ed. Milano Ed. Joca Book u.a. 1990 XII, 292 S. Ill., zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Perspectives in condensed matter physics 4. Literaturangaben Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd rswk-swf Elektronenstruktur (DE-588)4129531-6 gnd rswk-swf Elektrischer Kontakt (DE-588)4151733-7 gnd rswk-swf 1\p (DE-588)4143413-4 Aufsatzsammlung gnd-content Elektrischer Kontakt (DE-588)4151733-7 s DE-604 Metall-Halbleiter-Kontakt (DE-588)4169590-2 s Elektronenstruktur (DE-588)4129531-6 s 2\p DE-604 Mönch, Winfried Sonstige oth Perspectives in condensed matter physics 4. (DE-604)BV004434872 4 GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005057218&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Electronic structure of metal-semiconductor contacts Perspectives in condensed matter physics Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd Elektronenstruktur (DE-588)4129531-6 gnd Elektrischer Kontakt (DE-588)4151733-7 gnd |
| subject_GND | (DE-588)4169590-2 (DE-588)4129531-6 (DE-588)4151733-7 (DE-588)4143413-4 |
| title | Electronic structure of metal-semiconductor contacts |
| title_auth | Electronic structure of metal-semiconductor contacts |
| title_exact_search | Electronic structure of metal-semiconductor contacts |
| title_full | Electronic structure of metal-semiconductor contacts ed. by Winfried Mönch |
| title_fullStr | Electronic structure of metal-semiconductor contacts ed. by Winfried Mönch |
| title_full_unstemmed | Electronic structure of metal-semiconductor contacts ed. by Winfried Mönch |
| title_short | Electronic structure of metal-semiconductor contacts |
| title_sort | electronic structure of metal semiconductor contacts |
| topic | Metall-Halbleiter-Kontakt (DE-588)4169590-2 gnd Elektronenstruktur (DE-588)4129531-6 gnd Elektrischer Kontakt (DE-588)4151733-7 gnd |
| topic_facet | Metall-Halbleiter-Kontakt Elektronenstruktur Elektrischer Kontakt Aufsatzsammlung |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=005057218&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV004434872 |
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