Proceedings of the 5th International Conference on High Pressure in Semiconductor Physics: August 18-20, 1992, Kyoto, Japan
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Tokyo
Japanese Journal of Applied Physics
1993
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Schriftenreihe: | Japanese journal of applied physics
Supplement ; 32,1 |
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JAPANESE JOURNAL OF APPLIED PHYSICS VOLUME 32, 1993, SUPPLEMENT 32-1
/ I.
;/ PROCEEDINGS OF THE
5TH INTERNATIONAL CONFERENCE ON
HIGH PRESSURE IN SEMICONDUCTOR PHYSICS
AUGUST 18-20, 1992 KYOTO, JAPAN
EDITED BY
TOSHIHIRO ARAI SEINOSUKE ONARI
ACADEMIC SPONSORS PHYSICAL SOCIETY OF JAPAN JAPAN SOCIETY OF APPLIED
PHYSICS JAPAN SOCIETY OF HIGH PRESSURE SCIENCE AND TECHNOLOGY JAPANESE
ASSOCIATION OF CRYSTAL GROWTH
SOCIETY OF MATERIAL SCIENCE, JAPAN UB/TIB HANNOVER
AIRAPT EHPRG
89
110 630 521
IMAGE 2
CONTENTS
NEW STRUCTURAL RESULTS FOR THE HIGH-PRESSURE PHASES OF INSB R. J.
NELMES, M. I. MCMAHON, P. D. HATTON, R. O. PILTZ AND J. CRAIN 1 A
PRESSURE-INDUCED ISOSTRUCTURAL TRANSITION IN BLACK PHOSPHORUS AKIRA
MORITA, KIYOTAKA SHIBATA AND KOICHI SHINDO 6 HIGH PRESSURE STRUCTURAL
TRANSITIONS IN SEMICONDUCTORS JEAN MICHEL BESSON 11
STRUCTURAL STUDIES ON SE AND TE WITH SYNCHROTRON RADIATION TO MEGABAR
PRESSURES W. B. HOLZAPFEL, T. KRUGER, W. SIEVERS AND V. VIJAYAKUMAR 16
STRUCTURAL PHASE TRANSITIONS IN SELENIUM UP TO 150 GPA YUICHI AKAHAMA,
MOTOTADA KOBAYASHI AND HARUKI KAWAMURA 22 PHASE TRANSFORMATIONS AND P-T
DIAGRAM OF SOME HGX COMPOUNDS (X=S, SE, TE)
... J. C. TEDENAC, M. C. RECORD, R. M. AYRAL-MARIN, G. BRUN, J. JUN, I.
GRZEGORY, S. KRUKOWSKI AND M. BOCKOWSKI 26
HIGH PRESSUREAND EXAFS STUDIES OF THE SPIN-DENSITY WAVE STATES IN
CHROMIUM DOPED WITH SI, GE, AND SN HANS D. HOCHHEIMER 31
IMAGE PLATE STUDIES OF TETRAHEDRAL SEMICONDUCTORS UNDER PRESSURE: THE
IMPLICATION FOR EXPERIMENT AND THEORY J. CRAIN, G. J. ACKLAND, P. D.
HATTON, M. I. MCMAHON,
R. J. NELMES AND R. O. PILTZ 36
ON THE HIGH PRESSURE PHASES OF INSB G. Y. GUO, J. CRAIN AND W. M.
TEMMERMAN 39
STRUCTURAL PHASE TRANSITION OF III-V NITRIDES UNDER HIGH PRESSURE MASAKI
UENO, MINORU YOSHIDA AND AKIFUMI ONODERA 42
STRUCTURE OF SELENIUM UNDER HIGH PRESSURE KIYOFUMI NAGATA AND YASUHIKO
MIYAMOTO 45 STRUCTURAL PHASE TRANSITIONS AND EQUATIONS OF STATE OF SE
AND TE UNDER HIGH PRESSURE ATSUSHI NISHIKAWA, KOMAJIRO NIIZEKI AND
KOICHI SHINDO 48 PHASE DIAGRAM OF THE THREE-DIMENSIONAL HALOGEN-BRIDGED
MIXED-VALENCE COMPOUNDS M2AU2X6
(M=RB, CS;X=CL, BR, I) UNDER HIGH PRESSURE NORIMICHI KOJIMA, ATSUSHI
TANAKA, HIROHIKO SATO, HIROSHI KITAGAWA, TAKUMI KIKEGAWA AND OSAMU
SHIMOMURA 51 STRUCTURAL TRANSITIONS IN IODINE-INTERCALATED
BI2SR2CACU208+X: X-RAY AND RAMAN SCATTERING
STUDIES C. H. QIU, N. WADA AND T. F. CISZEK 54
VIEWS FROM THE ELECTRONIC STRUCTURE OF (GAAS)*(ALAS)* SHORT PERIOD
SUPERLATTICES HIROSHI KAMIMURA, GAKUEI SHIBATA AND TAKASHI NAKAYAMA 57
GAAS/ALAS SUPERLATTICES UNDER PRESSURE K. REIMANN 64
PRESSURE-INDUCED TYPE I-TYPE II CROSSOVER IN ALAS/GAAS SHORT-PERIOD
SUPERLATTICES FUJIO MINAMI, TAKESHI NAKAYAMA AND KUON INOUE 70
PRESSURE DEPENDENCE OF THE HARMONIC OSCILLATOR LEVELS OF A^GA^^AS
PARABOLIC QUANTUM WELLS .... J. H. BURNETT, H. M. CHEONG, W. PAUL, P. F.
HOPKINS AND A. C. GOSSARD 75 FIR PROPERTIES OF GAAS-GAALAS
HETEROJUNCTIONS CONTROLLED BY METASTABLE STATES UNDER PRESSURE A.
RAYMOND, C. CHAUBET, D. DUR, W. KNAP, W. ZAWADZKI AND J. P. ANDRE 78 CAN
EXTERNAL PERTURBATION MEASUREMENTS PROVIDE A CRITICAL TEST OFMODELS OF
THE SCHOTTKY BARRIER
FORMATION? JERZY M. LANGER 83
ELECTRONIC STRUCTURE OF STRAINED SUPERLATTICES TAKASHI NAKAYAMA 89
ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES OF (GA, IN)AS-(GA, AL)AS
QUANTUM WELLS AND SUPERLAT TICES UNDER INTERNAL AND EXTERNAL STRAIN
FIELDS BERNARD GIL AND PHILIPPE BORING 93 EXTERNAL AND/OR INTERNAL
STRESS EFFECTS ON THE OPTICAL PROPERTIES OF SEMICONDUCTOR
MICROSTRUCTURES FRED H. POLLAK AND H. QIANG 101
HETEROSTRUCTURE STABILITY: CONNECTIONS BETWEEN HIGH PRESSURE AND
EPITAXIAL GROWTH B. A. WEINSTEIN, L. J. CUI AND U. D. VENKATESWARAN 107
STRUCTURAL STUDIES ON STRAINED-LAYER LATTICES HIKARU TERAUCHI 113
HETEROINTERFACES IN STRAINED-LAYER SUPERLATTICES STUDIED BY
SURFACE-SENSITIVE XAFS HIROYUKI OYANAGI, KUNIHIRO SAKAMOTO AND TSUNENORI
SAKAKOTO 119 PRESSURE DEPENDENCE OF THE VALENCE-BAND OFFSET IN
(GAAS)8/(ALO.3GA0.7AS)12 SHORT PERIOD SUPERLATTICE ZHEN-XIAN LIU,
GUO-HUA LI, HE-XIANG HAN, ZHAO-PING WANG,
DE-SHENG JIANG AND KLAUS PLOOG 125
EFFECT OF HIGH HYDROSTATIC PRESSURES ON THE MAGNETO-CAPACITANCE OF
GAO.7ALO.3AS/GAAS HETEROJUNC TIONS M. LEFORT, G. BASTIDE, A. FOUCARAN,
M. ROUZEYRE AND B. ETIENNE 128
IMAGE 3
MAGNETO-PHOTOLUMINESCENCE STUDY OF BE (5-DOPED GAAS/ALGAAS QUANTUM WELLS
UNDER HYDROSTATIC PRESSURE S. G. LYAPIN, A. RAYMOND, P. VICENTE, M.
KUBISA, J. L. SAUVAJOL, K. A. ZEKENTES AND Z. HATZOPOULOS 132
DEFORMATION POTENTIAL IN HIGH ELECTRON MOBILITY GAAS/GAALAS
HETEROSTRUCTURES I. GORCZYCA, T. SUSKI, E. LITWIN-STASZEWSKA, L.
DMOWSKI, J. KRUPSKI AND B. ETIENNE 135 PRESSURE STUDIES OF TUNNELING
BETWEEN TWO-DIMENSIONAL ELECTRON GAS SYSTEMS T. SUSKI, J. SMOLINER, C.
GSCHLOBL, W. DEMMERLE, G. BOHM AND G. WEIMANN 138 ELECTRON TRANSPORT IN
ANTIDOT GAAS/ALGAAS STRUCTURES UNDER HYDROSTATIC PRESSURE
T. SUSKI, G. BERTHOLD, J. SMOLINER, R. MASCHEK, E. GORNIK, G. BOHM AND
G. WEIMANN 141 HIGH HYDROSTATIC PRESSURE EFFECTS ON PERPENDICULAR
TRANSPORT IN GAAS-ALAS SUPERLATTICES . . . ... F. ARISTONE, A. SIBILLE,
J. F. PALMIER, B. GOUTIERS, J. C. PORTAL AND F. MOLLOT 144 TAILORING OF
THE VALENCE BAND OFFSET IN THE ZNSE/ZNTE STRAINED-LAYER SUPERLATTICES
USING STRONG
BUILT-IN STRAIN FIELDS
T. CLOITRE, N. BRIOT, O. BRIOT, B. GIL, P. BORING, B. E. PONGA AND R. L.
AULOMBARD 147 PRESSURE DEPENDENCE OF BAND DISCONTINUITY IN GAAS/ALINP
QUANTUM WELL STRUCTURES .... TAKESHI NAKAYAMA, FUJIO MINAMI, SATORU
NAGAO, YUICHI INOUE AND HIDEKI GOTOH 151 HIGHER-INTERBAND TRANSITIONS IN
(ALAS)M(GAAS)M SUPERLATTICES UNDER HIGH PRESSURE
SATOSHI HITOMI, KEN-ICHI TAKARABE, SIGERU MINOMURA, HIROMU KATO AND
YASUTAKA WATANABE 154
RESONANT TUNNELING IN TRIPLE BARRIER DIODE UNDER PRESSURE KENICHI
TAKARABE, MASAHARU TAKUMI, SHIGERU MINOMURA, TADASHI NAKAGAWA AND
KIMIHIRO OHTA 157
OPTICAL PROPERTIES OF (INAS)I/(GAAS)M STRAINED-LAYER SUPERLATTICES
MASAAKI NAKAYAMA, TAKASHI FUJITA, ISAO TANAKA, HITOSHI NISHIMURA AND
HIKARU TERAUCHI 160 PHOTOREFLECTANCE CHARACTERIZATION OF INTERFACIAL
RESIDUAL STRAIN IN INGAAS/GAAS STRAINED SINGLE
QUANTUM WELL STRUCTURE .... KENJI WATANABE, TAKESHI TAKAMORI AND TAKESHI
KAMIJOH 163 EXTREME OPTICAL ANISOTROPY IN (110) QUANTUM WELLS INDUCED BY
[110] UNIAXIAL STRESS YASUTOMO KAJIKAWA 166 GROWTH AND CHARACTERIZATION
OF STARINED-LAYER QUANTUM WELLS WITH WIDE GAP ZNCDSSE ALLOY
SYSTEM KUNIO ICHINO, YOICHI KAWAKAMI, SHIZUO FUJITA AND SHIGEO FUJITA
169 LATTICE STRAIN IN SII-^GEJ. ALLOY AND SI/SIJ-^GE^ SUPERLATTICE
KAZUHIRO IWASA, KENICHI TAKARABE, SIGERU MINOMURA, KENICHI AKETAGAWA AND
JUNROU SAKAI 172 NEW TECHNIQUE TO FABRICATE STRESS-RELIEVED RELIABLE
LASERS ON SI SUBSTRATES
YOSHIAKI HASEGAWA, TAKASHI EGAWA, TAKASHI JIMBO AND MASAYOSHI UMENO 175
STUDIES OF AMORPHOUS SEMICONDUCTORS UNDER PRESSURE EDWARD A. DAVIS 178
AMORPHIZATION FROM QUENCHED HIGH-PRESSURE PHASE AT LOW TEMPERATURES AND
HIGH PRESSURES IN SEMICONDUCTORS KAZUHIKO TSUJI, YOSHINORI KATAYAMA,
NAOE KOYAMA
AND MOTOHARU IMAI 185
PRESSURE DEPENDENCE OF VARIABLE-RANGE HOPPING CONDUCTION IN AMORPHOUS
GERMANIUM ALLOYS JIAN-QIANG CHEN, YOSHINORI KATAYAMA AND KAZUHIKO TSUJI
188 PRESSURE EFFECT ON OPTICAL ABSORPTION COEFFICIENTS FOR AMORPHOUS
SILICON-GERMANIUM ALLOYS MOTOHARU IMAI, KAZUHIKO TSUJI AND TAKEHIKO YAGI
191 RAMAN SCATTERING OF AMORPHOUS SEMICONDUCTORS GE-S SYSTEM UNDER HIGH
HYDROSTATIC PRESSURE
SEINOSUKE ONARI, TAKAO INOKUMA AND TOSHIHIRO ARAI 194
DX CENTER IN ALGAAS:SI UNDER PRESSURE: ELECTRON STATISTICS FOR
NEGATIVE-U AND MULTILEVEL MODEL S. CONTRERAS, P. LORENZINI, V. MOSSER,
J. L. ROBERT, R. PIOTRZKOWSKI 197
PROBING THE DX CENTER IN GAAS AND RELATED ALLOYS BY CAPACITANCE
TRANSIENT MEASUREMENTS UNDER STRESS MING-FU LI AND PETER Y. YU 200
FIRST PRINCIPLE CALCULATION AND PHOTOLUMINESCENCE SPECTROSCOPY OF THE DX
CENTER EIICHI YAMAGUCHI AND MAHESH R. JUNNARKAR 206
PRESSURE AS A PROBE OF DEEP LEVELS AND DEFECTS IN SEMICONDUCTORS: GAAS,
GAP AND THEIR ALLOYS GEORGE A. SAMARA 212
UNUSUAL BEHAVIOUR OF THE DX-CENTRE IN GAAS:GE P. WISNIEWSKI, P. VAN DER
WEL, T. SUSKI, J. SINGLETON, C. SKIERBISZEWSKI, L. J. GILING, R.
WARBURTON, P. G. WALKER, N. J. MASON, R. J. NICHOLAS AND M. EREMETS 218
SPATIAL CORRELATION OF OCCUPIED DX CENTRES IN GAAS AND ITS DESTUCTION BY
THERMAL AND OPTICAL
EXCITATION L. H. DMOWSKI, B. GOUTIERS, D. K. MAUDE, L. EAVES, J. C.
PORTAL AND J. J. HARRIS 221
ELECTRON CAPTURE ON DX CENTERS NEAR T-X CROSSOVER IN ALGAAS:TE IGOR E.
ITSKEVICH 224
IMAGE 4
FARINFRARED MAGNETO-OPTICS OF THE SHALLOW-DEEP IMPURITY TRANSITIONS
USING DIAMOND ANVIL CELLS J. E. DMOCHOWSKI AND R. A. STRADLING 227
NEW RESULTS ON THE EL2 DEFECT IN GAAS . . . PIOTR DRESZER, PAWEL
TRAUTMAN AND MICHAL BAJ 233 TRANSITION METAL DEEP LEVEL DEFECTS IN
SILICON .. . . G. PFEIFFER, TH. PRESCHA AND J. WEBER 239 LARGE LATTICE
DISTORTION AND INFRARED PHOTOLUMINESCENCE IN CD^MN/TE JUN ICHIRO
NAKAHARA, JUNJI WATANABE AND TAIHEI NOUCHI 242
HYDROSTATIC PRESSURE DEPENDENCE OF EG-LOOMEV PHOTOLUMINESCENCE EMISSIONS
IN N-TYPE ALGAAS KAZUO UCHIDA, PATRICE SEGUY, HOOVER WONG, PATRICIA L.
SOUZA, PETER Y. YU, EICKE R. WEBER AND KOH MATSUMOTO 246
INVESTIGATION OF SHALLOW STATES RELATED TO SI-DX CENTERS IN ALGAAS NEAR
THE T-X-L CROSSOVER
B. GOUTIERS, L. DMOWSKI, E. RANZ, F. ARISTONE, J. C. PORTAL AND N. CHAND
249 CAN ONE MICROSCOPIC MODEL EXPLAIN THE DIFFERENT BEHAVIOR OF SI- AND
TE- RELATED DX CENTERS IN ALGAAS? P. PIOTRZKOWSKI, E. LITWIN-STASZEWSKA,
T. SUSKI, L. KONCZEWICZ AND J. L. ROBERT 252 MULTIPLICITY AND LATTICE
RELAXATION OF DX CENTER IN ALGAAS:SI STUDIED BY ELECTRON EMISSION
SPECTRA
UNDER PRESSURE KENICHI TAKARABE, HIROAKI ASHIZAWA, SHIGERU MINOMURA,
HIROMU KATO, YASUTAKA WATANABE, KOICHIROU MATSUDA 255 DEFECT SYMMETRIES
AND STRUCTURES OF OXYGEN-RELATED DONORS IN SILICON STUDIED BY STRESS
DEEP-LEVEL TRANSIENT SPECTROSCOPY
YOICHI KAMIURA, HIROBUMI TERAO, JOJI OKADA AND FUMIO HASHIMOTO 258 MBE
GROWN GASB, ALSB CRYSTALS. HIGH PRESSURE ELECTRICAL CHARACTERISATION L.
KONCZEWICZ, J-M. MERCY, J-L. ROBERT, L. DOBACZEWSKI, A. R. PEAKER 261
SPECTROSCOPIC INVESTIGATION OF SEMIMAGNETIC SEMICONDUCTORS UNDER HIGH
PRESSURE
S. C. SHEN AND S. JIANG 264
HIGH-FIELD MAGNETO-LUMINESCENCE IN CDO.9MNO.1SE UNDER HIGH PRESSURE AT
4.2 K
.... YASUHIRO MATSUDA, NORITAKA KURODA, IWAO MOGI, GIYUU KIDO, YUICHIRO
NISHINA, YASUAKI NAKAGAWA, J. R. ANDERSON AND W. GIRIAT 270 PRESSURE
DEPENDENCE OF PHOTOLUMINESCENCE IN ORDERED GAO.5INO.5P ALLOYS GROWN BY
OMVPE TOSHIHIKO KOBAYASHI 273
COMPARATIVE STUDY OF PHOTOLUMINESCENCE IN ORDERED AND DISORDERED
GAO.5INO.5P ALLOYS UNDER HYDORSTATIC PRESSURE
.... MASATAKA SHOJI, TOSHIHIKO KOBAYASHI, RAJPAL S. DEOL AND JUN ICHIRO
NAKAHARA 276 HIGH PRESSURE EFFECTS ON PHOTOLUMINESCENCE SPECTRA OF COLOR
CENTERS IN DIAMOND MICHIHIRO KOBAYASHI AND YOSHIO NISIDA 279
FUNDAMENTAL GAP OF DIAMOND UNDER HYDROSTATIC PRESSURE LA. TROJAN, M. I.
EREMETS, M. YU. KOROLIK, V. V. STRUZHKIN, A. N. UTJUZH 282 PRESSURE
INDUCED QUANTUM CONFINED EXCITONS IN LAYERED METAL TRI-IODIDE CRYSTALS
H. KURISU, T. TANAKA, T. KARASAWA AND T. KOMATSU 285
HYDROSTATIC PRESSURE EFFECTS ON SELF-TRAPPED EXCITON LUMINESCENCE IN KI
.... H. NISHIMURA, T. OGURI, T. TSUJIMOTO, M. NAKAYAMA, H. KURISU, T.
KOMATSU, S. MORITA AND M. KOBAYASHI 288
HYDROSTATIC PRESSURE DEPENDENCE OF THE FUNDAMENTAL ABSORPTION EDGES OF
CDINGAS4 AND ZNIN2S4 TARO TOYODA, MITSUMASA SORAZAWA, HISAYUKI
NAKANISHI, SABURO ENDO AND TAIZO IRIE 291
NONLINEAR REFRACTIVE INDEX OF ORGANIC MATERIALS UNDER HIGH PRESSURE
TAKASHI HIRAGA, NORIO TANAKA AND TETSUO MORIYA 294
PRESSURE EFFECTS ON CDS MICROCRYSTALS EMBEDDED IN GERMANATE GLASSES
TOSHIHIRO ARAI, TAKAO INOKUMA, TOSHIHARU MARINO AND SEINOSUKE ONARI 297
PRESSURE-INDUCED ELECTRONIC PHASE TRANSITION IN CEP NOBUO MORI, YASUSHI
OKAYAMA, HIROKI TAKAHASHI, YOSHINORI HAGA AND TAKASHI SUZUKI 300 NEUTRON
DIFFRACTION STUDY OF TL2BA2CUOE+ UNDER HIGH PRESSURE .... HIROKI
TAKAHASHI, JAMES D. JORGENSEN, BRETT A. HUNTER, RICHARD L. HITTERMAN,
SHIYOU PEI, FUJIO IZUMI, YUICHI SHIMAKAWA, YOSHIMI KUBO AND TAKASHI
MANAKO 303 HALL EFFECT UNDER PRESSURE IN LOW DIMENSIONAL ORGANIC
SUPERCONDUCTORS KEIZO MURATA, NATHANAEL A. FORTUNE, TOSHIHIRO TAKAHASHI,
KOICHI KIKUCHI, MADOKA TOKUMOTO, HIROYUKI ANZAI AND ISAO IKEMOTO 306
PRESSURE EFFECTS ON THE ANTIFERROELECTRIC PHASE TRANSITION IN K3H(S04)2
AND K3D(S04)2
YUTAKA MORITOMO AND YOSHINORI TOKURA 309
DYNAMIC BEHAVIORS OF PROTONS AND DEUTERONS IN SQUARIC ACID CRYSTAL AS
INVESTIGATED BY HIGHPRESSURE RAMAN SPECTROSCOPY YUTAKA MORITOMO AND
YOSHINORI TOKURA 312
HIGH PRESSURE PHASE OF KH2P04 YUKI KOBAYASHI AND SHOICHI
ENDO 315
IMAGE 5
PRESSURE-INDUCED CROSSOVER IN HEAVY FERMION COMPOUNDS TOMOKO KAGAYAMA
AND GENDO OOMI 318
ANOMALIES IN THE THERMAL EXPANSION AND ELECTRICAL RESISTIVITY OF
FE72NI28 ALLOY UNDER HIGH PRESSURE GENDO OOMI AND KEIKO IKI 321
THERMOELECTRIC-POWER MEASUREMENTS AS AN EFFECTIVE TOOL FOR HIGH PRESSURE
STUDIES OF THE ELECTRONIC STRUCTURE E. S. ITSKEVICH 324
SEMICONDUCTOR PRESSURE SENSORS AS SEEN BY A PHYSICIST WITOLD
TRZECIAKOWSKI, ELZBIETA LITWIN-STASZEWSKA, PIOTR PERLIN 328 III-V
SEMICONDUCTING NITRIDES: PHYSICAL PROPERTIES UNDER PRESSURE .... P.
PERLIN, I. GORCZYCA, S. POROWSKI, T. SUSKI, N. E. CHRISTENSEN AND A.
POLIAN 334 FOURIER TRANSFORM SPECTROSCOPY AT DIAMOND ANVIL CELL
PRESSURES .
S. N. HOLMES, M. LI, B. A. WEINSTEIN AND B. D. MCCOMBE 340
INN THERMODYNAMICS AND CRYSTAL GROWTH AT HIGH PRESSURE OF N2 IZABELLA
GRZEGORY, JAN JUN, STANISLAW KRUKOWSKI, PIOTR PERLIN AND SYLWESTER
POROWSKI 343 GAP-GAN PSEUDOBINARY SYSTEM. CRYSTAL GROWTH OF GAN FROM THE
SOLUTION IN THE LIQUID GAP IZABELLA GRZEGORY, JAN JUN, STANISLAW
KRUKOWSKI AND SYLWESTER POROWSKI 346 DESIGN OF HIGH PRESSURE APPARATUS
TO USE AT LOW TEMPERATURE AND HIGH MAGNETIC FIELD....
GENDO OOMI, TOMOKO KAGAYAMA AND YOSHIYA UWATOKO 349
CAN WE MEASURE A MOMENTUM CHANGE OF CONDUCTION ELECTRONS AT HIGH
PRESSURE? GENDO OOMI AND FUMITAKE ITOH 352
NEW DEVELOPMENT OF HIGH-PRESSURE BRILLOUIN STUDY FOR ELASTIC PROPERTIES
OF MOLECULAR SOLID . . HIROYASU SHIMIZU AND SHIGEO SASAKI 355
THE SUCCESS OF STRAINED LAYER LASERS ELUCIDATED BY HIGH PRESSURE
EXPERIMENTS ALFRED R. ADAMS, MARTIN HAWLEY, EOIN O REILLY AND WILLIAM
RING 358
|
any_adam_object | 1 |
author2 | Arai, Toshihiro |
author2_role | edt |
author2_variant | t a ta |
author_corporate | International Conference on High Pressure in Semiconductor Physics Kyōto |
author_corporate_role | aut |
author_facet | Arai, Toshihiro International Conference on High Pressure in Semiconductor Physics Kyōto |
author_sort | International Conference on High Pressure in Semiconductor Physics Kyōto |
building | Verbundindex |
bvnumber | BV007193140 |
callnumber-first | Q - Science |
callnumber-label | QC611 |
callnumber-raw | QC611 |
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callnumber-sort | QC 3611 |
callnumber-subject | QC - Physics |
classification_rvk | UP 2500 |
ctrlnum | (OCoLC)28713892 (DE-599)BVBBV007193140 |
dewey-full | 537.622 |
dewey-hundreds | 500 - Natural sciences and mathematics |
dewey-ones | 537 - Electricity and electronics |
dewey-raw | 537.622 |
dewey-search | 537.622 |
dewey-sort | 3537.622 |
dewey-tens | 530 - Physics |
discipline | Physik |
format | Conference Proceeding Book |
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genre | (DE-588)1071861417 Konferenzschrift 1992 Kioto gnd-content |
genre_facet | Konferenzschrift 1992 Kioto |
id | DE-604.BV007193140 |
illustrated | Illustrated |
indexdate | 2024-07-09T16:57:22Z |
institution | BVB |
institution_GND | (DE-588)5085454-9 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-004601179 |
oclc_num | 28713892 |
open_access_boolean | |
owner | DE-384 DE-703 DE-91G DE-BY-TUM DE-83 DE-706 |
owner_facet | DE-384 DE-703 DE-91G DE-BY-TUM DE-83 DE-706 |
physical | 360 S. graph. Darst. |
publishDate | 1993 |
publishDateSearch | 1993 |
publishDateSort | 1993 |
publisher | Japanese Journal of Applied Physics |
record_format | marc |
series | Japanese journal of applied physics |
series2 | Japanese journal of applied physics : Supplement |
spelling | International Conference on High Pressure in Semiconductor Physics 5 1992 Kyōto Verfasser (DE-588)5085454-9 aut Proceedings of the 5th International Conference on High Pressure in Semiconductor Physics August 18-20, 1992, Kyoto, Japan ed. by Toshihiro Arai ... Tokyo Japanese Journal of Applied Physics 1993 360 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Japanese journal of applied physics : Supplement 32,1 Semiconductors Congresses Hochdruck (DE-588)4160091-5 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1992 Kioto gnd-content Hochdruck (DE-588)4160091-5 s Halbleiter (DE-588)4022993-2 s DE-604 Arai, Toshihiro edt Japanese journal of applied physics Supplement ; 32,1 (DE-604)BV001888390 32,1 https://www.gbv.de/dms/tib-ub-hannover/127955704.pdf Inhaltsverzeichnis GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=004601179&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
spellingShingle | Proceedings of the 5th International Conference on High Pressure in Semiconductor Physics August 18-20, 1992, Kyoto, Japan Japanese journal of applied physics Semiconductors Congresses Hochdruck (DE-588)4160091-5 gnd Halbleiter (DE-588)4022993-2 gnd |
subject_GND | (DE-588)4160091-5 (DE-588)4022993-2 (DE-588)1071861417 |
title | Proceedings of the 5th International Conference on High Pressure in Semiconductor Physics August 18-20, 1992, Kyoto, Japan |
title_auth | Proceedings of the 5th International Conference on High Pressure in Semiconductor Physics August 18-20, 1992, Kyoto, Japan |
title_exact_search | Proceedings of the 5th International Conference on High Pressure in Semiconductor Physics August 18-20, 1992, Kyoto, Japan |
title_full | Proceedings of the 5th International Conference on High Pressure in Semiconductor Physics August 18-20, 1992, Kyoto, Japan ed. by Toshihiro Arai ... |
title_fullStr | Proceedings of the 5th International Conference on High Pressure in Semiconductor Physics August 18-20, 1992, Kyoto, Japan ed. by Toshihiro Arai ... |
title_full_unstemmed | Proceedings of the 5th International Conference on High Pressure in Semiconductor Physics August 18-20, 1992, Kyoto, Japan ed. by Toshihiro Arai ... |
title_short | Proceedings of the 5th International Conference on High Pressure in Semiconductor Physics |
title_sort | proceedings of the 5th international conference on high pressure in semiconductor physics august 18 20 1992 kyoto japan |
title_sub | August 18-20, 1992, Kyoto, Japan |
topic | Semiconductors Congresses Hochdruck (DE-588)4160091-5 gnd Halbleiter (DE-588)4022993-2 gnd |
topic_facet | Semiconductors Congresses Hochdruck Halbleiter Konferenzschrift 1992 Kioto |
url | https://www.gbv.de/dms/tib-ub-hannover/127955704.pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=004601179&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
volume_link | (DE-604)BV001888390 |
work_keys_str_mv | AT internationalconferenceonhighpressureinsemiconductorphysicskyoto proceedingsofthe5thinternationalconferenceonhighpressureinsemiconductorphysicsaugust18201992kyotojapan AT araitoshihiro proceedingsofthe5thinternationalconferenceonhighpressureinsemiconductorphysicsaugust18201992kyotojapan |
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Inhaltsverzeichnis