Einzelne Störstellen in der Si-SiO 2 -Grenzschicht von MOS-Feldeffekttransistoren:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | German |
| Published: |
1992
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| Subjects: | |
| Physical Description: | 202 S. graph. Darst. |
Staff View
MARC
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| 245 | 1 | 0 | |a Einzelne Störstellen in der Si-SiO 2 -Grenzschicht von MOS-Feldeffekttransistoren |c vorgelegt von Agnes Karmann |
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| 650 | 7 | |a MOS-FET |2 swd | |
| 650 | 7 | |a Silicium |2 swd | |
| 650 | 7 | |a Störstelle |2 swd | |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Störstelle |0 (DE-588)4193400-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
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| 689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
| 689 | 0 | 1 | |a Silicium |0 (DE-588)4077445-4 |D s |
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Record in the Search Index
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| any_adam_object | |
| author | Karmann, Agnes |
| author_facet | Karmann, Agnes |
| author_role | aut |
| author_sort | Karmann, Agnes |
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| building | Verbundindex |
| bvnumber | BV006494397 |
| ctrlnum | (OCoLC)611767282 (DE-599)BVBBV006494397 |
| format | Thesis Book |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV006494397 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:47:08Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-004129752 |
| oclc_num | 611767282 |
| open_access_boolean | |
| owner | DE-12 DE-83 DE-11 DE-188 |
| owner_facet | DE-12 DE-83 DE-11 DE-188 |
| physical | 202 S. graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| record_format | marc |
| spelling | Karmann, Agnes Verfasser aut Einzelne Störstellen in der Si-SiO 2 -Grenzschicht von MOS-Feldeffekttransistoren vorgelegt von Agnes Karmann 1992 202 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Erlangen-Nürnberg, Univ., Diss., 1992 MOS-FET swd Silicium swd Störstelle swd Silicium (DE-588)4077445-4 gnd rswk-swf Störstelle (DE-588)4193400-3 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content MOS-FET (DE-588)4207266-9 s Silicium (DE-588)4077445-4 s Störstelle (DE-588)4193400-3 s 1\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Karmann, Agnes Einzelne Störstellen in der Si-SiO 2 -Grenzschicht von MOS-Feldeffekttransistoren MOS-FET swd Silicium swd Störstelle swd Silicium (DE-588)4077445-4 gnd Störstelle (DE-588)4193400-3 gnd MOS-FET (DE-588)4207266-9 gnd |
| subject_GND | (DE-588)4077445-4 (DE-588)4193400-3 (DE-588)4207266-9 (DE-588)4113937-9 |
| title | Einzelne Störstellen in der Si-SiO 2 -Grenzschicht von MOS-Feldeffekttransistoren |
| title_auth | Einzelne Störstellen in der Si-SiO 2 -Grenzschicht von MOS-Feldeffekttransistoren |
| title_exact_search | Einzelne Störstellen in der Si-SiO 2 -Grenzschicht von MOS-Feldeffekttransistoren |
| title_full | Einzelne Störstellen in der Si-SiO 2 -Grenzschicht von MOS-Feldeffekttransistoren vorgelegt von Agnes Karmann |
| title_fullStr | Einzelne Störstellen in der Si-SiO 2 -Grenzschicht von MOS-Feldeffekttransistoren vorgelegt von Agnes Karmann |
| title_full_unstemmed | Einzelne Störstellen in der Si-SiO 2 -Grenzschicht von MOS-Feldeffekttransistoren vorgelegt von Agnes Karmann |
| title_short | Einzelne Störstellen in der Si-SiO 2 -Grenzschicht von MOS-Feldeffekttransistoren |
| title_sort | einzelne storstellen in der si sio 2 grenzschicht von mos feldeffekttransistoren |
| topic | MOS-FET swd Silicium swd Störstelle swd Silicium (DE-588)4077445-4 gnd Störstelle (DE-588)4193400-3 gnd MOS-FET (DE-588)4207266-9 gnd |
| topic_facet | MOS-FET Silicium Störstelle Hochschulschrift |
| work_keys_str_mv | AT karmannagnes einzelnestorstellenindersisio2grenzschichtvonmosfeldeffekttransistoren |