Hydrogen in semiconductors: Bulk and surface properties: proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990
Gespeichert in:
Format: | Tagungsbericht Buch |
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Sprache: | English |
Veröffentlicht: |
Amsterdam u.a.
North-Holland
1991
|
Schriftenreihe: | Physica / B
170 |
Schlagworte: | |
Beschreibung: | XVII, 581 S. graph. Darst. |
Internformat
MARC
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Datensatz im Suchindex
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physical | XVII, 581 S. graph. Darst. |
publishDate | 1991 |
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publisher | North-Holland |
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series2 | Physica / B |
spelling | Hydrogen in semiconductors: Bulk and surface properties proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990 eds.: M. Stutzmann ... Amsterdam u.a. North-Holland 1991 XVII, 581 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Physica / B 170 Hydrogène - Congrès Semiconducteurs - Congrès Semiconducteurs - Défauts - Congrès Hydrogen Congresses Semiconductors Congresses Semiconductors Defects Congresses Oberfläche (DE-588)4042907-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Wasserstoff (DE-588)4064784-5 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1990 Triest gnd-content Halbleiter (DE-588)4022993-2 s Wasserstoff (DE-588)4064784-5 s DE-604 Oberfläche (DE-588)4042907-6 s 1\p DE-604 Stutzmann, Martin Sonstige oth Trieste Semiconductor Symposium 6 1990 Triest Sonstige (DE-588)3007771-0 oth 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Hydrogen in semiconductors: Bulk and surface properties proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990 Hydrogène - Congrès Semiconducteurs - Congrès Semiconducteurs - Défauts - Congrès Hydrogen Congresses Semiconductors Congresses Semiconductors Defects Congresses Oberfläche (DE-588)4042907-6 gnd Halbleiter (DE-588)4022993-2 gnd Wasserstoff (DE-588)4064784-5 gnd |
subject_GND | (DE-588)4042907-6 (DE-588)4022993-2 (DE-588)4064784-5 (DE-588)1071861417 |
title | Hydrogen in semiconductors: Bulk and surface properties proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990 |
title_auth | Hydrogen in semiconductors: Bulk and surface properties proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990 |
title_exact_search | Hydrogen in semiconductors: Bulk and surface properties proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990 |
title_full | Hydrogen in semiconductors: Bulk and surface properties proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990 eds.: M. Stutzmann ... |
title_fullStr | Hydrogen in semiconductors: Bulk and surface properties proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990 eds.: M. Stutzmann ... |
title_full_unstemmed | Hydrogen in semiconductors: Bulk and surface properties proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990 eds.: M. Stutzmann ... |
title_short | Hydrogen in semiconductors: Bulk and surface properties |
title_sort | hydrogen in semiconductors bulk and surface properties proceedings of the sixth trieste iupap ictp semiconductor symposium international centre for theoretical physics trieste italy 27 31 august 1990 |
title_sub | proceedings of the Sixth Trieste IUPAP-ICTP Semiconductor Symposium International Centre for Theoretical Physics, Trieste, Italy, 27 - 31 August 1990 |
topic | Hydrogène - Congrès Semiconducteurs - Congrès Semiconducteurs - Défauts - Congrès Hydrogen Congresses Semiconductors Congresses Semiconductors Defects Congresses Oberfläche (DE-588)4042907-6 gnd Halbleiter (DE-588)4022993-2 gnd Wasserstoff (DE-588)4064784-5 gnd |
topic_facet | Hydrogène - Congrès Semiconducteurs - Congrès Semiconducteurs - Défauts - Congrès Hydrogen Congresses Semiconductors Congresses Semiconductors Defects Congresses Oberfläche Halbleiter Wasserstoff Konferenzschrift 1990 Triest |
work_keys_str_mv | AT stutzmannmartin hydrogeninsemiconductorsbulkandsurfacepropertiesproceedingsofthesixthtriesteiupapictpsemiconductorsymposiuminternationalcentrefortheoreticalphysicstriesteitaly2731august1990 AT triestesemiconductorsymposiumtriest hydrogeninsemiconductorsbulkandsurfacepropertiesproceedingsofthesixthtriesteiupapictpsemiconductorsymposiuminternationalcentrefortheoreticalphysicstriesteitaly2731august1990 |