Gallium arsenide and related compounds 1989: proceedings of the sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25 - 29 September 1989
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| Format: | Tagungsbericht Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Bristol [u.a.]
1990
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| Schriftenreihe: | Institute of Physics <London>: Institute of Physics conference series
106 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XXIV, 924 S. graph. Darst. |
| ISBN: | 0854980652 |
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MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV006079533 | ||
| 003 | DE-604 | ||
| 005 | 20000614 | ||
| 007 | t | ||
| 008 | 921030s1990 d||| |||| 10||| eng d | ||
| 020 | |a 0854980652 |9 0-85498-065-2 | ||
| 035 | |a (OCoLC)21867975 | ||
| 035 | |a (DE-599)BVBBV006079533 | ||
| 040 | |a DE-604 |b ger |e rakwb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-703 |a DE-20 |a DE-91 |a DE-11 | ||
| 050 | 0 | |a QC611.8.G3 | |
| 082 | 0 | |a 537.622 |2 20 | |
| 084 | |a UP 3100 |0 (DE-625)146372: |2 rvk | ||
| 084 | |a PHY 693f |2 stub | ||
| 245 | 1 | 0 | |a Gallium arsenide and related compounds 1989 |b proceedings of the sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25 - 29 September 1989 |c ed. by T. Ikoma ... |
| 264 | 1 | |a Bristol [u.a.] |c 1990 | |
| 300 | |a XXIV, 924 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Institute of Physics <London>: Institute of Physics conference series |v 106 | |
| 650 | 4 | |a Gallium arsenide semiconductors |v Congresses | |
| 650 | 4 | |a Semiconductors |v Congresses | |
| 650 | 0 | 7 | |a Galliumarsenid |0 (DE-588)4019155-2 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1989 |z Karuizawa |2 gnd-content | |
| 689 | 0 | 0 | |a Galliumarsenid |0 (DE-588)4019155-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Ikoma, Toshiaki |e Sonstige |4 oth | |
| 711 | 2 | |a International Symposium on Gallium Arsenide and Related Compounds |n 16 |d 1989 |c Karuizawa |j Sonstige |0 (DE-588)3007039-9 |4 oth | |
| 830 | 0 | |a Institute of Physics <London>: Institute of Physics conference series |v 106 |w (DE-604)BV002806317 |9 106 | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003837475&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-003837475 | ||
Datensatz im Suchindex
| _version_ | 1804120301076742144 |
|---|---|
| adam_text | Contents
vi GaAs Symposium
Welker
Award with Gold Medal
viii
Young Scientist Award
xxiii
Preface
Chapter
1:
Plenary papers
1 -8
Dreams and expectations of
III-V
semiconductors
H
Nakajima
9—12
Use of hybrid reflectors to achieve low thresholds in all MBE grown
vertical cavity surface emitting laser diodes
R J
Fischer,
К
Tai,
M Hong and A Y Cho
Chapter
2:
Bulk crystals
13—18
Composition
dependence of lattice parameter for low dislocation density
LEC GaAs
crystals
К
Usuda,
S
Yasuami,
T
Fujii,
Y
Higashi,
H
Kawata
and M
Ando
19—24
Behaviour of arsenic precipitates in as-grown and heat treated
LEC
GaAs
T J Fawcett, M R
Brozel and
D J Stirland
25—30
Low
Fe
doped InP single crystals and their ion implantation
characteristics
К
Kainosho,
H
Shimakura,
T
Kanazawa,
T
Inoue and
О
Oda
31-38
Atomic layer epitaxy of III-V compounds by metalorganic and hydride
sources
M
Ozeki,
К
Mochizuki,
Y
Sakuma,
N
Ohtsuka and
K Kodarna
39—44
n
and p-type doping in atomic layer epitaxy of GaAs
T
Takanohashi,
К
Mochizuki and
M
Ozeki
45—50
Novel liquid In-precursors for MOVPE
F
Scholz,
M
Moser,
A
Molassioti,
К
Streubel,
H
Hostalek and
L
Pohl
51—56
Growth of GaAs and InP in an inert atmosphere
M
Deschler,
R
Beccard,
К
Grüter
and
P
Balk
x
Contents
57-62
Effects of reactive hydrogen by catalyst on GaAs grown by alkylarsenic
OMPVE
SNoda, S Metavikul,
XL Wang, TOkuda, YTakedaandA Sasaki
63-68
Carbon impurities in MOCVD InP
G
E
Stillman, B T
Cunningham,
S
A Stockman,
В
Lee,
S S
Bose,
I Szaf ranek
and J
E Baker
Chapter
3:
Atomic layer epitaxy and metalorganic vapour phase epitaxy
69-74
Surface morphology of AlGaAs regrown on an AlGaAs surface by
MOCVD
M
Yuri,
A Noma, MHirose,
IOhta andMKazumura
75-80
Gas flow in a vertical MOCVD reactor
NS Raghavan,
W
Montasser,
R
S
Timsit,
R L
Adams and
E J
Fjarlie
81-86
Uniform
3
GaAs, AlGaAs and InGaAs abrupt heterostructures grown
by atmospheric pressure MOCVD
J
Carter, NPan, WHoke,
H
Hendricks and
J
Mosca
87-92
Planar embedded growth of GalnAs by OMVPE
M
Murata.
T
Monta,
К
Koike,
T
Katsuyama and
K Ono
93-98
Ordered structure in the OMVPE-grown Gao.7Ino.3P alloy
MKondow,
H
Kakibayashi and SMinagawa
99-104
High quality GaAs layer on SOS using a specifically designed MOCVD
system
TNishimura, K
Kadoiwa,
N
Hayaf
uji, KMizuguchi
and TMurotani
105—110
Improvement of InP crystal quality on GaAs substrate by thermal cyclic
annealing and strained-layer superlattice
T
Kimura,
N
Hayafuji,
N
Kaneno,
N
Yoshida,
M Tsugami,
KMizuguchi
and TMurotani
111-116
MOVPE growth of Ini_xGaxP/GaAs strained-layer superlattices and
their dislocation filtering in GaAs on Si
MKondo,
H Okuda, T
Tanahashi andKNakajima
117-122
High quality GaAs-on-Si by MOCVD with ternary alloys, AlGaP
and AlGaAs
NNoto, SNozaki, TEgawa,
T
Soga,
T
Jimbo and
M Umeno
123-128
OMVPE-growth and characteristics of GaP/GalnP/GaP strained-layer
single quantum-well using tertiarybutylphosphine
Y
Takeda,
S
Araki,
M
Takemi,
S Noda
and A Sasaki
129-134
OMVPE
growth of highly uniform GalnP and AlGalnP/GalnP QW
structures
T
Katsuyama, I Yoshida and
Η
Hayashi
Contents xi
135-140
MOCVD growth of InGaAs/InGaAsP QW structures and its application
to DFB laser
N
Yoshida, TKimura,
N
Kaneno,
К
Mizuguchi, A Takemoto and
TMurotani
141-146
Wide-gap semiconductor (In,Ga)N
TMatsuoka,
H
Tanaka,
Τ
Sasaki and A Katsui
Chapter
4:
Molecular beam epitaxy and epitaxial growth
147-152 Anisotropie
lateral growth of GaAs and AlAs by molecular beam
epitaxy
Τ
Sugaya,
S Yokoyama
andMKawabe
153-158
Trap suppression technology in GaAs epilayers with lattice matched In
doping
К
Yantada
and
К
Wada
159-163
Si incorporation
with isoelectronic As co-doping in MBE grown GaSb,
AlSb on GaAs substrates
A
Z
Li,
Y
L
Zheng,
J
H Qiu,
J
X
Wang
and
F Y
Ни
165-170
Site-addressed doping of amphoteric Si impurities in MBE growth
of GaAs
T
Kamijoh,
N
Sugiyama and
Y Katayama
171-176
In-situ measurements of critical layer thickness and optical studies of
InGaAs quantum wells grown on GaAs substrates
B Elman, E S
Köteles,
P Melman, C
Jagannath and D Bugger
177-182
Room temperature electron mobility of
10 500
cm2/V.s in an
ino^GaoAi^^^OAS^OAS^i^) heterostructure grown on a GaAs
substrate
JCHarmand,
T
Matsuno and
К
Inoue
183-188
Growth modes of
(100)
InxGai-xAs growth on GaAs/InP below critical
thickness
—
consequences for pseudomorphic MODFETs
P R
Berger,
Y C
Chen,
J
Singh and
P K Bhattacharya
189-194
Low temperature MBE growth of GaAs and AlInAs for high speed
devices
MJDelaney,
A S
Brown, UKMishra,
С
S Chou,
L E
Larson,
L
Nguyen
and
J
Jensen
195-200
InGaAs/InAlAsíSi)
modulation-doped heterostructures intentionally
lattice mismatched to InP substrates
JCHarmand,
T
Matsuno and
К
inoue
xii Contents
201-206
Low interface state densities in as-grown epitaxial ZnSe/epitaxial GaAs
heterostructures
J
Qiu, Q-D Qian,
M
Kobayashi,
R L
Gunshor,
D R Menke, D
Li,
N Otsuka and L A
Kołodziejski
207-212
High
transconductance laser
assisted modulation MBE GaAs/Si field
effect transistors
A Christou,
N
Papanicolaou,
A Georgakilas, J
Türner
and
P
Panayotatos
213-216
Laser-assisted MOMBE growth of GaAs striped pattern with
4
/tm pitch
T
Yantada,
R
Iga and
H Sugiura
217-222
Gas-source MBE growth of Alo.3Gao.7As using TEG, TEA and AsH3
H
Ando,
A Sandhu,
H
Ishikawa,
Y
Śugiyama
and
T
Fujii
223-228
Metalorganic molecular beam epitaxy of GaAs and AlGaAs using both
metal and metalorganic sources
A Watanabe,
H
Hata,
Tisu, T Kamijoh and
Y Katayama
229-234
Electrical and optical properties of heavily Be-doped GalnP and AllnP
grown by gas source MBE using PH3
A Takamori,
T
Yokotsuka,
К
Uchiyama and
M
Nakajima
235—240
Ga and As solute elements transport by direct electric current in
In-Ga—As ternary solution
С
Takenaka and
К
Nakajima
241—244
Importance of V/III supply ratio in low temperature epitaxial growth of
InSb by plasma-assisted epitaxy
TOhshima,
S Yamauchi
and THariu
Chapter
5:
Impurity and defect levels
245—250
New luminescence bands in heavily Be-doped and low-compensated
GaAs grown by molecular beam epitaxy
HShibata,
Y
Makita,
M
Mori, YNakayama,
T
Takahashi,
A Yantada,
К
M
Mayer,
N
Ohnishi and
А С
Beye
251-256
Photoluminescence spectra in an applied magnetic field for exitons
bound to ionized donors in high-purity, epitaxial GaAs
S
Zetnon and
G
Lambert
257-262
Donor acceptor pair spectroscopy in GaAs directly grown on silicon
G
Neu
and
A
Freundlich
263-266
Activation of germanium acceptors during S1CI4 reactive-ion etching of
MOCVD GaAs epitaxial layers
J
Weber,
W
D
Sawyer and
С
I Harris
Contents xiii
267-272
Transient behavior of deep traps in GaAs semi-insulating substrates by
numerical analysis
H
Yano,
S
Kumashiro,
N
Goto and
Y
Ohno
273-278
Optical charge transfer process in semi-insulating GaAs
TBenchiguer,
E
Christoffel,
A Goltzené,
С
Schwab,
К
Chino
and
KSatoh
279-284
Generation of electron traps (similar to EB4, EB6 etc) in GaAs by
reaction between Si and defects introduced by deformation
F
Hasegawa,
S
Kondoh and
M
Onomura
285-290
Arsenic
antisite
defects AlxGai_xAs observed by luminescence detected
electron spin resonance
M
Fockele,
В К
Meyer,
J
M
Spaeth,
M
Heuken and
К
Heime
291-296 Quantitative
analysis of the persistent photoconductivity effect in
GaAlAs as a function of pressure and
modélisation
of its non-
exponential time decay kinetics
В
Goutiers,
DLavielle, G Gregoris, J C
Portal and
N
Chand
297-302
Pressure and persistent photoconductivity studies of DX centers in Si
б
doped AlxGa!_xAs layers
D
Lavielle,
E
Ranz
and
J C
Portal
303-308
Effects of DX centre of I-V curves of AlGaAs/GaAs laser structures
PHubik, VSmid,
E Hulicius, J Krištofik, J J
Mares,
P
Hlinomaz and
J Zeman
309-314
DX center
free
heterostructure
Ało.3Gao.7As:In/GaAs:In
K
Kobayashi,
M Yamaga,
I
Fujimoto
and T
Suzuki
315-320
Pressure
dependence and comparison of the
Si and
Sn
related DX centers
in AlxGai_xAs
D
Lavielle,
J
M
Saliese,
В
Goutiers,
LDmowskì,
PBasmaji, J C
Portal
and P
Gibart
321-326
The local-environment-dependent DX centers
MMizuta,
T Baba, TFujisawa, J
Yoshino and
H Kukimoto
327-332
1.54/ші
photoluminescence and electroluminescence of erbium doped
GaAs and GaAlAs grown by molecular beam epitaxy
PGaltier, TBenyattou, JPPocholle, MNCharasse,
G
Guillot and
JPHirtz
333-338
Implantation of erbium elements in GaAs and related compounds
PNFavennec, H ĽHaridon, D
Moutonnet,
M
Salvi,
M Gauneau
and
А С
Papadopoulo
339-344
Excitation mechanism of rare-earth emissions
(Yb, Tm, Er, Pr)
in GaAs
andInP
G S Pomrenke, R L
Hengehold and YKYeo
xiv Contents
Chapter
6:
Properties of heterostructures and interfaces
345-350
Direct experimental estimation of interface
dipole
effect of GaAs/AlAs
heterojunction band offset by x-ray photoelectron spectroscopy
KHirakawa,
Y
Hashimoto,
Τ
Saito
and
Τ
Ikoma
351-356
Band offsets in GaAs/Gao.siIno^P heterostructures grown by MOCVD
Ρ
Bhattacharya,
N
Debbar,
D
Biswas, MRazeghi, MDefourand
F Omnes
357-362
Band line-up for GalnP/GaAs heterojunction measured by npn- and
pnp-heterojunction bipolar transistors
TKobayashi, FNakamura,
К
Taira
and
H Kawai
363-368
Novel method to determine the conduction-band discontinuity in
InGaAs/InP quantum well structures by using the monolayer energy
splitting
KUomi,
S
Sasaki,
Τ
Tsuchiya and
N
Chinone
369-374
Electron concentration and conduction band discontinuity in selectively
doped N-AlGaAs/InGaAs/GaAs pseudomorphic heterostructures
Η
Tomozawa, KMatsuzaki,
Η
Hasegawa and
Η
Ohno
375-380
First observation of single quantum well luminescence in
ZnSe/GaAs/AlGaAs
N
Kobayashi and
Y
Homma
381-386
Exciton localization along the
[001 ]
growth-direction in GaAs/AlAs
short-period superlattices
KFujiwara,
R
angolani
and
К
Ploog
387-392
A photoluminescence
study of GaAs/AlAs type II quantum wells as a
function of ALAs thickness
PDawson,
С
TFoxon and
H W
Van
Resteren
393-398
Structure dependence of intersubband absorption in InGaAs/InAlAs
multiquantum wells
H
Asai,
YKawamura,
O Mikami
and
M
Naganuma
399-404
Surface studies of GaAs treated by hydrogen and nitrogen rf plasma
A Callegari,
D
Lacey, DA Buchanan,
E Latta,
M
Gasser
and
A PaccagneUa
405-410
An extremely low interface state density of SiNx with thin pn interface
control layer deposited on (NH4)2Sx treated InP
HIshimura,
К
Sasaki and
H
Tokuda
411-416
Plasma-assisted surface treatment of GaAs for improved ZnSe/GaAs
heterostructures
SYamauchi,
T
Kitagaki and
T
Hariu
Contents
xv
417-422
Transient capacitance characterization of near-midgap donor-like
interface states in AIN/GaAs MIS diodes
Y
Mochizuki, MMizuta, SFujieda and
Y
Matsumoto
423-428
Some new results on non-radiative recombination in MBE grown GaAs-
GaAlAs heterostructures
В
Sermage,
F
Mollot,
F
Alexandre and
Y Gao
429—434
Effective masses
of quasi-two-dimensional electron gas in Si-atomic layer
doped GaAs
S
Yantada
and TMakimoto
435-440
Strain and density dependent valence-band masses in InGaAs and
GaAs/GaAsP strained-layer structures
E D
Jones,
R M
Biefeld,
J
F Klem
and S K Lyo
441-446
Biaxial strain induced changes in hole bandstracture
—
consequences for
hole masses and acceptor levels in InGaAs (on GaAs)
/
P
Loehr,
J
Singh,
Y
С
Chen,
P
Bhattacharya and
D
Biswas
447-452
Study of electrical activation in strained InGaAs/GaAs heterostructures
Y Uchida, TMishima, T
Tanoue,
M
Takahama and
S
Takahashi
453-458
Dislocation induced anisotropies of the structural and optical properties
of pseudomorphic Ino.23Gao.77As/GaAs quantum wells
M
Grundmann,
U Lienert, J
Bohrer, J Christen,
D Bimberg, A
Fischer-
Colbrie
and J
N Miller
459-464
Thermal stability of an AlSb/GaSb superlattice
N
Iwata,
Y
Nakahara and I Hirosawa
Chapter
7:
Characterization
465-470
Dopant incorporation in
б
-doped
GaAs layers studied by local
vibrational mode spectroscopy
/
Wagner,
M
Ramsteiner,
W
Stolz,
M
Hauser and
К
Ploog
471-476
Compensation in MBE-grown GaAs doped with silicon and beryllium
A Mohades-Kassai, MR Brozel,
R
Murray and
R C
Newman
477-482
Photoluminescence
and
photoluminescence
excitation spectroscopy in a
magnetic field for GaAs grown on an Si substrate
S
Zemon,
J
Lee and
G
Lambert
483-488
Photomminescence of AlGaAs/GaAs modulation-doped
heterostructures grown by low pressure MOVPE
FEG
Guimarães,
M
Heuken and
К
Heime
489-494
Photoluminescence investigation
of InGaAs/InAlAs
short
period
superlattice
grown by molecular beam epitaxy
HNakamura, NChinone,
К
Uomi and
К
Ishida
xvi Contents
495-500
Optical characterization of reactive ion beam etching induced damage
using GaAs/AlGaAs quantum well structures
Y
Ide,
N
Takado andKAsakawa
501-506
Hall-equivalent determination of carrier mobility and concentration in
SQW-, MQW- and HIG-FET channels
W
Prost,
W
Bettermann,
К
Heime, IGyuro,
H Dämbkes, M
Heuken,
W
Schlapp
and G
Weimann
507-512
Investigation
of
GaAs-based
heterostructures using electron beam
electroreflectance
(EBER) spectroscopy
M H
Herman and ID Ward
513-518
Spatial imaging of current filamentation during low-temperature
avalanche breakdown in GaAs
Κ Μ
Mayer,
J
Parisi,
R P Huebener and Y Makita
Chapter
8:
Process technologies
519-526
Material problems of GaAs on Si and application to LSI
HShichijo,
Y
С
Kao,
T
S
Kim, A
H Taddiken
and R J
Matyi
527-532
Compositional intermixing of InGaAs/InP superlattice structures by
Ga ion implantation
S J
Yu, HAsahi,
H
Sumida,
S
Emura, S-I Gonda and
H Tanoue
533-537
Selective formation of 2DEG by implanting Si-FIBs and MBE
overgrowth in ultrahigh vacuum
A Kawano,
H
Arimoto,
H
Kitada,
S
Sasa,
E
Miyauchi and
T
Fujii
539-544
Capless
rapid thermal annealing in As-overpressure and its annealing
mechanism for Si implanted into GaAs
T
Suzuki,
S Komatsuzaki
andJKasahara
545-550
Novel slip-free rapid thermal annealing of GaAs in vacuum with
excellent uniformity and reproducibility
M
Kohno,
H
Hida, YTsukada,
Y
Ogawa,
M
Fujii
and
T
Nozaki
551-556
С
+
-implantation into AlxGai_xAs and its application to collector-up
HBTs
YMatsuoka,
S
Yamahata and TIshibashi
557-562
Arsenic overpressure in GaAs annealing as a tool to control substrate
resistivity and implanted Si activation
A
Ehrenheim
and
F Vidimari
563-568
Interactions of diffused Zn and p-type dopants (Be, C) in GaAs
ONakajima,
Hito
and TIshibashi
Contents xvii
569-574 Model
for the activation and diffusion of p-type dopants in gallium
arsenide
W
H
van
Berlo
and
G Landgren
575-580
Passivation and diffusion behaviour of Zn in MOCVD grown InGaAlP
and its effect on the device characteristics of visible lasers
MIshikawa,
M
Suzuki, YNishikawa, KItaya, GHatakoshi,
Y
Kokubun
and
Y
Uematsu
581-585
Properties of WNX films and WTVGaAs Schottky diodes prepared by
ion beam assisted deposition technique
J-CLee, C-SPark, J-YKang and D-S Ma
587-592
Effect of
Ti
thin
interfacial
layer on WSiNx/GaAs contacts
К
Shimada, TAkiyama and
Y
Koshino
593-598
Low-resistive ohmic contact to P-type GaAs using an alloyed Pt/Zn/Au
layer
T
Nogami,
KMorìzuka,
M
Asaka
and M
Obara
599-604
Vertical
etching of GaAs using ArF laser controlled chemical reaction
К
Yamada
Chapter
9:
High-speed and high-frequency devices
605-612
High performance AlInAs-GalnAs HEMTs and HBTs
U
К
Mishra,
A S
Brown and
J
F
Jensen
613-618
A highly mismatched Alo.27Gao.73As/Ino.4Gao.6As pseudomorphic
HEMT
with an Ino.2Ga0.sAs buffer layer
К
Maezawa and TMizutani
619-624
Pseudomorphic Gao.51Ino.49P/Ino.15Gao.85As/GaAs HIGFET s
Y J
Chan,
D
Pavlidis,
M
Razeghi,
F Omnes
and M
Def
our
625-630 InAs-GaAs superlattice/N-Alo^sIno^As
modulation-doped field effect
transistor grown by molecular beam epitaxy
N
Nishiyama,
H Yano, S
Nakajima and
H
Hayashi
631-636
A low-noise high-gain AlGaAs/GaAs
HEMT
having optimized doping
layer
Y
Oishi, KKanazawa,
M
Nishiuma,
M
Hagio,
H
Takagi and
G
Kano
637-640
N-InxAl^xAs/Ino^Gao^As pseudomorphic selectively doped
heterostructures with improved Schottky characteristics
К
Imanishi,
T
Ishikawa and
K Kondo
641-646
Charge control analysis and fabrication of high-transconductance
pseudomorphic InGaAs/AlGaAs double-heterostructure MODFETs
К
Inoue,
K Nishii
and TMatsuno
xviii Contents
647-652 High fT
п
-InGaAs/n-GaAs
pseudomorphic MESFET
with improved gm
linearity and pinch-off property
NKobayashi,
Y
Arai,
MItoh,
HNakamura, S
Nishi and
S
Takahashi
653-658
High-speed and highly uniform
submicron
gate BPLDDFET for GaAs
LSIs
MNoda, KHosogi, KMaemura,
Τ
Kato,
Y
Nakajima, KNishitani and
M
Outsubo
659-664
Microscopic uniformity of Vth in GaAs MESFETs
KHosogi, TShimura,
Y
Nakajima,
M
Noda and
К
Nishitani
665-670
Electrical instabilities in field effect transistors from superlattice MBE
buffer layers
G
N
Maracas,
R
A Puechner,
H Goronkin
and
S Tehrani
671-676
Threshold voltage model for side-gating effect in GaAs MESFETs based
on hole injection and recombination
N
Goto,
Y
Ohno and
H Yano
677-682
Two-dimensional numerical analysis of device isolation for digital GaAs
LSIs
M
Hirose,
К
Ishida,
N
Uchitomi and
N
Toyoda
683-688
Reduction of «-particle-induced charge by trench isolation structure for
high-speed GaAs SRAMs
Y Umemoto, J
Takahashi and
N
Matsunaga
689-693
High-efficiency
30
GHz-band power InP MISFETs
H
Tokuda, HIshimura,
К
Sasaki,
F
Sasaki and
T
Yoshida
695-700
GaAs/AlGaAs HBT technology for
10
Gbit/s optical communication
JAkagi,
Y
Kuriyama, KMorizuka, MAsaka,
K Tsuda, M
Obara,
H
Yamakawa and
H
lbe
701-706
An assessment of noise sources and characteristics of AlGaAs/GaAs
heterojunction bipolar transistors
MN Tlttt,
D
Pavlidis and
B Bayraktaroglu
707-712
GalnAs/InP hot electron transistors grown by OMVPE
Y
Miyamoto,
К
Uesaka,
S Yamaura
andKFuruya
713-718
Intervalley deformation potential in GaAs estimated by a hot electron
transistor
I Hase,
К
Taira, H Kawai and
К Катко
719-724
A
new
vertical transistor
based
on
Г-Г
and X-X
discontinuities in the
AlxGai -xAs/AiyGai _yAs heterostructures
/
Singh,
R
Lai
and P Bhattacharya
Contents xix
Chapter
10:
Optical devices
725-730 UV
and blue electroluminescence from Al/GaN:Mg/GaN LED treated
with low-energy electron beam irradiation (LEEBI)
H
Amano,
M
Kit oh, KHiramatsu and IAkasaki
731-736
High performance gallium arsenide based
IR
detectors in the
6—11
μτη
range fabricated by MOVPE
/
Y
Andersson
and
G Landgren
737-742
Impact ionization rates in AlxGai_xSb
H
Kuwatsuka, TMikawa, SMiura,
N
Yasuoka,
M
Ito,
T
Tanahashi and
O Wada
743-748
Surface recombination in InGaAs photoconductive detectors and its
reduction by a novel passivation scheme using an MBE Si layer
Klizuka, J-I Akasaka,
T
Tsubata and
H
Hasegawa
749-754
Growth of high-efficiency resonant periodic gain vertical cavity surface-
emitting lasers
H
ESchaus,
С
F Schaus, S
Sun,
ΜΥΑ
Raja, A Jacome-Torres and
J G Mclnerney
755-758
Integration of a
1.3
μΐη
InGaAs/GaAs strained layer SQW waveguide
with an IMSM photodetector
С
Jagannath, A Silletti,
A N M M Choudhury, B Elman, P Melman
and
E S
Koteies
759-764
MBE-grown InAs/GalnAs
strained-layer MQW
lasers
with
GalnAs/AlInAs modified
SCH
structure
Y Matsushima, H
Kato
and K Utaka
765-770
Reduction of threshold current and enhancement of characteristic
temperature in
І.Здт
GalnAsP GRIN-SCH-MQW laser diodes by facet
coating
N
Matsumoto, A Kasukawa,
H
Okamoto and
S
Kashiwa
771-776
Local operating temperatures in GaAs quantum well lasers
H
Brugger,
Ρ
WEpperlein,
S
Beeck
and G
Abs
treiter
777-782
Low capacitance dual balanced detectors integrated for coherent
communications
Ph Riglet, MErman,
J P
Chañé,
Ph
Jany, J J Vingrief, B G Martin,
D Decoster and J P Gouy
783-788
Ion implantation technology for long wavelength receiver OEICs
SA
Kitching,
W
S
Lee,
S
W
Bland and
J
Mun
789-794
Integrated heterojunction bipolar
phototransistor
with MQW collector
for low power photonic switching
S
С
Hong,
W
Q
Li,
S
Goswami,
J E Oh, P Bhattacharya
and J Singh
xx Contents
Chapter
11:
Resonant tunneling and quantum size effects
795_799 The dependence of I-V characteristics in
GaAs-A^Gai-xAs-GaAs
heterojunction barriers on the transverse
uniaxial
stress
S S Lu,
K R
Lee, M
I Nathan,
M
Heiblum
and
S L Wright
801 -806
Time domain analysis of resonant tunneling in double barrier
heterostructure
L
de
Saint Pol,
D
Lippens,
F
Clerot,
В
Lambert,
В
Deveaud and
В
Sermage
807-812
Existence of intrinsic bistability in resonant tunneling diode studied by
novel Monte Carlo technique
T Baba
and
M Mizuta
813-818
Experimental investigations of the effect of inelastic scattering on
resonant tunneling
D
Lippens,
J L
Lorriaux,
O Vanbesien and L
de Saint
Pol
819-824
Inverted
bistability: a
new type of intrinsic effect in asymmetric double
barrier structures
ML Leadbeater,
О
H
Hughes,
M
Henini and
L
Eaves
825-830
Characterisation of MOVPE-grown AlGaAs/GaAs resonant tunneling
structures
R D
Schnell,
H
Tews,
R
Neumann, A Mitwalsky,
R Treichler
and
G
Packeiser
831—836
Double-barrier resonant tunneling diodes: theory and experiment
Th
G
van
de Roer,
H C
Hey
ker, L M F
Kaufmann,
J J M Kwaspen,
M
Schemmann,
H P Joosten, D Lenstra, H
Noteborn,
M Henini and
O H Hughes
837-842
Surface-structured quantum effect devices on GaAs/AlGaAs
К
Ismail
843-848
Recombination and tunneling dynamics in square and coupled
quantum wells
NDebbar,
D
Biswas,
P K
Bhattacharya and
J
Singh
849-854
Disordered crystalline semiconductors
A Sasaki,
M Kasu, T
Yamamoto and
S Noda
855-860
In-plane-gated (IPG) quantum wire transistor fabricated with directly
written focused ion beams
A D
Wieck and
K Ploog
861-868
Microfabrication
and electron scattering in very small devices
T J
Thornton, ML Roukes, A Scherer and
B P
Van
der Gaag
Contents xxi
869-874 Electronic
state of AlAs/GaAs vertical superlattice in modulation doped
structure
К
Tsubaki,
Y
Tokura
and
N
Susa
875-879
New lateral resonant tunneling FETs fabricated using molecular beam
epitaxy and ultra-high resolution electron beam lithography
S Y Chou,
D R
Allee,
R F
W
Pease and
J S
Harris
Jr
881-886
Two-dimensional quantum confinement by preferential growth over
corrugated GaAs substrate
К
Kojima,
KMitsunaga
andKKyuma
Chapter
12:
Late news papers
887 11
Gb/s multiplexer and demultiplexer using
0.15-μΐη
GaAs MESFETs
MOhhata,
Y
Yamane, TEnoki,
S
Sugitani,
N
Kato
and
M
Hirayama
889
Large-area MOVPE growth of GaAs/AlGaAs heterostructures for
HEMT
LSIs
J
Romeno,
H
Тапака,
N Tomesakai and
T Ohori
891
DC and microwave characteristics of GalnP/GaAs HEMT s suitable for
cryogenic operation
Y J
Chan,
D
Pavlidis,
M
Razeghi and
F Omnes
893
Pseudomorphic high electron mobility transistors by atmospheric
pressure metal-organic chemical vapor deposition
NPan,
J
Carter,
G S
Jackson,
J
С
Huang, XL Zheng,
H
Hendriks,
WE Hoke,
M S
Feng and
К С
Hsieh
895
High peak-to-valley ratios of strain-free InGaAs/AlAsSb resonant
tunneling barrier structures grown by MBE
T
Inata,
S
Muto,
Y
Nakata
and T
Fujii
897
Dynamic growth rate of ultra-thin GalnAs layers on InP
L
Samuelson,
M-E
Pistol,
W
Seifert,
J
-О
Forneil
and L
Ledebo
899
Heavily
С
-doped
p-type InGaAs
lattice-matched to the GaAs substrate
T
Yamada,
T
Akatsuka, SNozaki, RMiyake,
M
Konagaiand
К
Takahashi
901
High quality (etch-pit-density of 4x
КУ ст~2)
GaAs/Si at growth
temperature and dislocation generation in the cooling stage
M
Tachikawa and
H Mori
903
Low-threshold high-efficiency strained-layer InGaAs single-quantum-
well ridge waveguide lasers
T
Takeshita,
M
Okayasu,
A
Kozen, O Kogure
and
S Uehara
xxii Contents
905 First
fabrication
of strained layer modulation doped InGaAs/InGaAsP
multiple quantum well DFB laser diodes emitting at
1.5
μτη
and having
high quantum efficiency and narrow linewidth
Ρ
JA Thijs, Tv Dongen,
J J
MBinsma,
P
I
Kuindersma,
J
Cnoops,
W
Scheepers
and G L
Avd
Hof stad
907
Marked
enhancement of electron impact ionization in InAlAs/InGaAs
superlattice avalanche
photodiodes
KMakita,
T
Torikai,
KFukushima, I Watanabe and
T
Uji
909
Fast recovery of excitonic absorption peaks in tunneling bi-quantum-well
structures
A Tackeuchi,
Tinaia,
S
Muto
and
T
Fujii
911
Strain-induced enhancement of exciton optical absorption resonances in
biaxially compressed In^GaxAs/InP multiple quantum wells
M
Sugawara,
T
Fujii, A Kuramata,
TUchida,
S Yamazaki
and
KNakajima
913
Room-temperature observation of intra^f-shell
photoluminescence
of
Nd3+ ions doped in GaP by metalorganic chemical vapor deposition
К
Takahei and
H
Nakagome
915
Novel optical analysis of impurity densities in high mobility GaAs
Z
H Lu, M
С
Hanna,
E
W
Mao,
D
M
Szmyd,
E
G Oh and A
Majerfeld
917
Laser assisted molecular beam epitaxy
(LAMBE) GaAs
on silicon
photodetectors
NA Papanicolaou, A Christou,
A Georgakilas, G W
Anderson,
J
S Modolo and F
J
Kub
919-924
Author
Index
|
| any_adam_object | 1 |
| building | Verbundindex |
| bvnumber | BV006079533 |
| callnumber-first | Q - Science |
| callnumber-label | QC611 |
| callnumber-raw | QC611.8.G3 |
| callnumber-search | QC611.8.G3 |
| callnumber-sort | QC 3611.8 G3 |
| callnumber-subject | QC - Physics |
| classification_rvk | UP 3100 |
| classification_tum | PHY 693f |
| ctrlnum | (OCoLC)21867975 (DE-599)BVBBV006079533 |
| dewey-full | 537.622 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.622 |
| dewey-search | 537.622 |
| dewey-sort | 3537.622 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01933nam a2200421 cb4500</leader><controlfield tag="001">BV006079533</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20000614 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">921030s1990 d||| |||| 10||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0854980652</subfield><subfield code="9">0-85498-065-2</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)21867975</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV006079533</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-703</subfield><subfield code="a">DE-20</subfield><subfield code="a">DE-91</subfield><subfield code="a">DE-11</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">QC611.8.G3</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.622</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3100</subfield><subfield code="0">(DE-625)146372:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 693f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Gallium arsenide and related compounds 1989</subfield><subfield code="b">proceedings of the sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25 - 29 September 1989</subfield><subfield code="c">ed. by T. Ikoma ...</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Bristol [u.a.]</subfield><subfield code="c">1990</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XXIV, 924 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Institute of Physics <London>: Institute of Physics conference series</subfield><subfield code="v">106</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Gallium arsenide semiconductors</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Galliumarsenid</subfield><subfield code="0">(DE-588)4019155-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1989</subfield><subfield code="z">Karuizawa</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Galliumarsenid</subfield><subfield code="0">(DE-588)4019155-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ikoma, Toshiaki</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">International Symposium on Gallium Arsenide and Related Compounds</subfield><subfield code="n">16</subfield><subfield code="d">1989</subfield><subfield code="c">Karuizawa</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)3007039-9</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Institute of Physics <London>: Institute of Physics conference series</subfield><subfield code="v">106</subfield><subfield code="w">(DE-604)BV002806317</subfield><subfield code="9">106</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung TU Muenchen</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003837475&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-003837475</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1989 Karuizawa gnd-content |
| genre_facet | Konferenzschrift 1989 Karuizawa |
| id | DE-604.BV006079533 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:39:54Z |
| institution | BVB |
| institution_GND | (DE-588)3007039-9 |
| isbn | 0854980652 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-003837475 |
| oclc_num | 21867975 |
| open_access_boolean | |
| owner | DE-703 DE-20 DE-91 DE-BY-TUM DE-11 |
| owner_facet | DE-703 DE-20 DE-91 DE-BY-TUM DE-11 |
| physical | XXIV, 924 S. graph. Darst. |
| publishDate | 1990 |
| publishDateSearch | 1990 |
| publishDateSort | 1990 |
| record_format | marc |
| series | Institute of Physics <London>: Institute of Physics conference series |
| series2 | Institute of Physics <London>: Institute of Physics conference series |
| spelling | Gallium arsenide and related compounds 1989 proceedings of the sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25 - 29 September 1989 ed. by T. Ikoma ... Bristol [u.a.] 1990 XXIV, 924 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Institute of Physics <London>: Institute of Physics conference series 106 Gallium arsenide semiconductors Congresses Semiconductors Congresses Galliumarsenid (DE-588)4019155-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1989 Karuizawa gnd-content Galliumarsenid (DE-588)4019155-2 s DE-604 Ikoma, Toshiaki Sonstige oth International Symposium on Gallium Arsenide and Related Compounds 16 1989 Karuizawa Sonstige (DE-588)3007039-9 oth Institute of Physics <London>: Institute of Physics conference series 106 (DE-604)BV002806317 106 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003837475&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Gallium arsenide and related compounds 1989 proceedings of the sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25 - 29 September 1989 Institute of Physics <London>: Institute of Physics conference series Gallium arsenide semiconductors Congresses Semiconductors Congresses Galliumarsenid (DE-588)4019155-2 gnd |
| subject_GND | (DE-588)4019155-2 (DE-588)1071861417 |
| title | Gallium arsenide and related compounds 1989 proceedings of the sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25 - 29 September 1989 |
| title_auth | Gallium arsenide and related compounds 1989 proceedings of the sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25 - 29 September 1989 |
| title_exact_search | Gallium arsenide and related compounds 1989 proceedings of the sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25 - 29 September 1989 |
| title_full | Gallium arsenide and related compounds 1989 proceedings of the sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25 - 29 September 1989 ed. by T. Ikoma ... |
| title_fullStr | Gallium arsenide and related compounds 1989 proceedings of the sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25 - 29 September 1989 ed. by T. Ikoma ... |
| title_full_unstemmed | Gallium arsenide and related compounds 1989 proceedings of the sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25 - 29 September 1989 ed. by T. Ikoma ... |
| title_short | Gallium arsenide and related compounds 1989 |
| title_sort | gallium arsenide and related compounds 1989 proceedings of the sixteenth international symposium on gallium arsenide and related compounds held in karuizawa japan 25 29 september 1989 |
| title_sub | proceedings of the sixteenth International Symposium on Gallium Arsenide and Related Compounds held in Karuizawa, Japan, 25 - 29 September 1989 |
| topic | Gallium arsenide semiconductors Congresses Semiconductors Congresses Galliumarsenid (DE-588)4019155-2 gnd |
| topic_facet | Gallium arsenide semiconductors Congresses Semiconductors Congresses Galliumarsenid Konferenzschrift 1989 Karuizawa |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003837475&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV002806317 |
| work_keys_str_mv | AT ikomatoshiaki galliumarsenideandrelatedcompounds1989proceedingsofthesixteenthinternationalsymposiumongalliumarsenideandrelatedcompoundsheldinkaruizawajapan2529september1989 AT internationalsymposiumongalliumarsenideandrelatedcompoundskaruizawa galliumarsenideandrelatedcompounds1989proceedingsofthesixteenthinternationalsymposiumongalliumarsenideandrelatedcompoundsheldinkaruizawajapan2529september1989 |