Technical digest 1991: Monterey, California, October 20 - 23, 1991
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
New York, NY
Inst. of Electrical and Electronics Engineers
1991
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XV, 372 S. Ill., graph. Darst. |
| ISBN: | 078030196X 0780301978 0780301986 |
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| 111 | 2 | |a GaAs IC Symposium |n 13 |d 1991 |c Monterey, Calif. |j Verfasser |0 (DE-588)5068088-2 |4 aut | |
| 245 | 1 | 0 | |a Technical digest 1991 |b Monterey, California, October 20 - 23, 1991 |c GaAs IC Symposium |
| 264 | 1 | |a New York, NY |b Inst. of Electrical and Electronics Engineers |c 1991 | |
| 300 | |a XV, 372 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Literaturangaben | ||
| 650 | 7 | |a Circuits intégrés - Congrès |2 ram | |
| 650 | 7 | |a Semiconducteurs à l'arséniure de gallium - Congrès |2 ram | |
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Datensatz im Suchindex
| _version_ | 1804120137714892800 |
|---|---|
| adam_text | TABLE
OF
CONTENTS
MONDAY, OCTOBER
21
SYMPOSIUM OPENING
8:(X)a.m.-8:l5 a.m.
1991
Symposium Chairman
M
.
С
.
Driver.
Westinghouse
Science and Technology
С
enter, Pittsburgh.
PA
1991
Technical Program Chairman
B. M. Welch. Cray Computer Corporation, Colorado Springs, CO
SESSION A: DIRECTIONS IN HIGH PERFORMANCE
1С
TECHNOLOGY
8:15
a.m.
DeAnza Ballroom
Chairmen: A. Geissberger. Alpha Industries, Wohurn, MA
J. Mikkelson. Vitesse Semiconductor, Camurillo, CA
8:20 a.m.
A.I HBT
1С
TECHNOLOGIES AND APPLICATIONS IN
JAPAN, (Invited Paper). M. Hirayama. NTT LSI Labora¬
tories, Atsugi-shi. JAPAN. K. Honjo, NEC Corp.. Kawasaki-
shi, Japan, M.
Obara.
Toshiba Corp., Kawasaki-shi, Japan,
and
N.
Yokoyama. Fujitsu Labs, Ltd., Atsuoji-shi, Japan
8:50
a.m.
A.2 HBT APPLICATION PROSPECTS IN THE U.S.:
WHERE AND WHEN?, (Invited Paper). P. Asbeck, Uni¬
versity of California-San Diego, San Diego,
С А, М.
Chang.
Rockwell International, Thousand Oaks. CA,
3.
Corcoran.
Hewlett-Packard, Palo Alto, CA, J. Jensen, Hughes Research
Labs, Malibu,
С
A. R. Nottenburg. AT&
Τ
Bell Labs. Murray
Hill.
NJ. A. Oki.
TRW,
Redondo
Beach, CA, and H. Yuan.
Texas Instruments, Dallas,
TX
9:20 a.m.
A.3 GROWTH AND NEW DIRECTIONS IN COMMERCIAL
11
III-V EPITAXIAL MANUFACTURING, (Invited Paper),
T.J. CNeill, and J. Parsey, Jr.,
Bandgap
Technology Corpo¬
ration, Broomfield, CO
10:20
a.m.
A.4 SILICON VLSI TECHNOLOGY—TODAY AND TO-
15
MORROW, (Invited Paper),
T. Ning,
IBM Research Divi¬
sion,
Yorktown
Heights, NY
10:50
a.m.
A.5 A MONOLITHIC DIGITAL CHIRP SYNTHESIZER
19
CHIP WITH I AND
Q
CHANNELS, G. Van Andrews.
С
Chang. J.
Cayo,
S.
Sabin, W.
White
and M.
Harris. Texas
Instruments. Inc., Dallas,
TX
11:10 a.m.
A.6 A MICROWAVE
ŽDEG-CCD
FOR HIGH SPEED
SIG-
23
NAL
ACQUISITION,
R.
LaRue.
R.
Colbeth,
G.
Davis.
С.
Yuen.
С.
Shih.
Y.
Chung,
R.
Weiss,
Varían
Research Center,
Palo Alto, CA, and D. Rossi. Columbia University, New York,
NY
PANEL SESSION
1:
Quest for the Best Test:
High Speed Digital
1С
Testing
12:00
noon-
1:30
p.m.
DeAroa
1-Й
Peed Organizer
ми)
Moderator: G. LaRue
Boeing
Seattle, WA
Panei
Members: Mike Roberts, Cray Computer. Colorado Springs,
CO: Teruo
Tamama.
Verisys Inc., Fuchinobe, Japan; Pat Hamilton,
THQuint Semiconductor, Beaverton, OR; Larry Burns, Hughes, Man¬
hattan Beach, CA: Chris Gardner. Vitesse Semiconductor, Camirillo
CA
27
PANEL SESSION
2:
Truth In MMIC Power Applications: What/s the Best
Device?
12:00
noon-h-W p.m.
DeAnza 111
Panel Organizers and Moderators: M.
Schindler
Raytheon Research,
Lexington, MA
H. Hung
COMSAT Laboratories,
Clarksburg, MD
Panelists: Nan-Lei Wang. Rockwell International, Thousand Oaks,
CA; John Huang, Raytheon Research, Lexington, MA; Allen
Podeli.
Pacific Monolithks, Sunnyvale,
CA; Amin Ezzeddins,
COMSAT Lab¬
oratories, Clarksburg, MD
29
vi
MONDAY, OCTOBER
21
SESSION B: SYSTEM APPLICATIONS OF GaAs MMICs
31
I
-.45
p.m.
DcAnza I—II
Chairmen: M. Malbon. Avuntek, Santa Clara. CA
W.
Bloss,
Aerospace Corporation, Los Angeles, CA
1:45
p.m.
B.I SYSTEM AND TECHNOLOGY ASPECTS OF FUTURE
DIGITAL CELLULAR PHONES IN EUROPE, (Invited
Paper) P. Briere. E. Perea and
O.
de
Saint
Leger,
Thomson
Composants
Microondes,
Orsay,
FRANCE
2:15 p.m.
B.2
1/4
MINIATURED PASSIVE ELEMENTS FOR GaAs
MMICs, M. Hirano, Y. Imai and K.
Asai.
NTT LSI Labo¬
ratories, Kanagawa
Pre
f.,
JAPAN
2:35
p.m.
B.3 BEAM FORMING MATRIX DESIGN USING MMICs
FOR
A MUĽTIBEAM
PHASED-ARRAY ANTENNA, R.
Gupta. T. Hampsch. H.
Gerson,
A. Zaghioul, R. Sorbello
and F.
Assai.
COMSAT Laboratories, Clarksburg, MO
33
37
41
2:55
p.m.
B.4
A 15-GHz AIGaAs/GaAs HBT LIMITING AMPLIFIER
WITH LOW PHASE DEVIATION, M. Nakamura, Y. Imai,
E. Sano.
Y.
Yamauchi and O. Nakajima, NTT LSI Labora¬
tories, Kanagawa, JAPAN
3:4«
p.m.
B.5 A DOUBLE BALANCED
6-Й
GHz GeAs MMIC MIXER,
M. Maescl. ST Microwave,
W. Ou,
J.
Panelli,
J. Archer, G.
Bechtei and R.
Hamilton.
Litton
Solid
State
Division,
Santa
Clara, CA
4:(Klp.m.
B.6 K-BAND
FREQUENCY UP-CONVERTERS USING RE¬
DUCED-SIZE COUPLERS AND DIVIDERS,
T. Hirota
and M. Muraguchi. NTT Radio Communication Systems
Laboratories, Yokosuka, JAPAN
4:20 p.m.
B.7 A SINGLE-CHIP K-BAND RECEIVER, H. Yang. K. An¬
gel, Magnavox Government and Industrial Electronics Com¬
pany,
Tonarne,
CA.
and
К.
Fry. Hughes Aircraft Company,
El Segundo,
С А
45
49
53
57
4:40
p.m.
ВЛ
MINIATURE
3-е
GHz
VE RTEUS»
Wľ*nfcJrf
DOWN CON-
rd.
Hittite
Mi-
61
SESSION C: DIGITAL
1С
TECHNOLOGY
65
1:45
p.m.
DcAnza HI
Chairmen: D. Fulkerson, Honeywell Systems
&
Research Center,
Bloomington, MN
W. Stanchina,
Hughes Research Laboratories, Malibu, CA
1:45 p.m.
C.I HETEROSTRUCTURE MESFET DEVICES FOR VLSI
67
APPLICATIONS, (Invited Paper). K. Elliott, Rockwell In¬
ternational Corporation, Newbury Park, CA
2:15 p.m.
C.2 A
4
KBIT SYNCHRONOUS STATIC RANDOM ACCESS
71
MEMORY BASED UPON DELTA- DOPED COMPLE¬
MENTARY HETEROSTRUCTURE INSULATED GATE
FIELD EFFECT TRANSISTOR TECHNOLOGY, D. Gri-
der. I. Mactaggart, J. Nohava. J. Stronczer, P. Ruden, T.
Nohava, D. Fulkerson and D. Tetzlaff, Honeywell Systems
and Research Center,
Bloomington, MN
2:35
p.m.
C.3 A GaAs
NON-
VOLATILE MEMORY, D. Harrington. W.
75
Gee, J. Fay, I. Leybovich, I. Naik. T. Nicalek, B. Maderic,
L. Sanchez, M. Stoddard, G. Troeger, S. Watanabe, S. Wu,
McDonnell Douglas Electronic Systems Company,
Huntington
Beach, CA. and J. Notthoff, Hl-V Logic
2:55
p.m.
C.4 CAN DIGITAL GaAs BE USED IN A SPACE ENVIRON-
79
MENT? A
LOOK AT SINGLE EVENT UPSET IN GaAs,
T. Weatherford, D. Wilson, L.
Tran,
SFA,
Inc., Landover,
MD, A. Campbell, D. McMorrow, J. Langworthy, W. Stapor,
A. Knudson, and E. Petersen, Naval Research Laboratory,
Washington, DC
3:40
p.m.
C.5 TWO-PHASE DYNAMIC
FET
LOGIC: AN EX-
83
TREMELY LOW POWER, HIGH SPEED LOGIC FAM¬
ILY FOR GaAs VLSI, K. Nary and S. Long, University of
California at Santa Barbara, Santa Barbara, CA
4:(W p.m.
C.6 NOVEL MGHz T-FF AND D-FF ICs USING GaAs
MES-
87
FET
SOURCE-INPUT CIRCUITS, K. Yoshihara, T.
Umeda,
T. înoue,
К.
Ishida,
Y.
Kitaura
and
M.
Konno, To¬
shiba Corporation,
Kawasaki-shi, JAPAN
4:20
p.m.
C.7
DIODE-HBT-LOGIC CIRCUITS MONOLITHICALLY
91
INTEGRATABLE
WITH
ECL/CML
CIRCUITS,
К.
Wang,
S. Beccue, M.
Chang,
R. Nubling, Rockwell International
Science
Center, Thousand Oaks,
CA, A.
Cappon, T. Tsen,
D.
Chen, Rockwell International Microelectronics Technology
Center, Newbury Park, CA, P. Asbeck and C. Kwok, Univer¬
sity of California, San Diego, CA
4:4»
p.m.
C.8 LOGIC CIRCUITS USING RESONANT-TUNNELING
95
HOT ELECTRON TRANSISTORS (RHETs), M. Takatsu,
K.
Imamura.
H.
Ohnishi.
T.
Mori,
T.
Adachihara,
S.
Muto
and
N.
Yokoyama, Fujitsu Limited, Atsugi, JAPAN
УІІ
TUESDAY, OCTOBER
22
SESSION D: HIGH SPEED HETEROJUNCTION TECH-
99
NOLOGY FOR ICs
8:00
a.m.
DeAnza
Ш
Chairmen: K.
Nakano.
Wright Laboratory, WPAFB, OH
G. Bechtei. Litton Solid State, Santa Clara,
С А
8:05
a.m.
D.I HIGH SPEED, LOW VOLTAGE COMPLEMENTARY
101
HETEROSTRUCTURE
FET
CIRCUIT TECHNOLOGY,
R. Kiehl. J.
Yates.
L.
Palmateer.
S. Wright,
D.
Frank. T.
Jackson.
J.
Degelormo, and A. Fleischman, IBM,
Yorktown
Heights, NY
8:25
a.m.
D.2
U-BAND
200 mW PSEUDOMORPHIC In
Ga As
POWER 105
HEMT,
S.
Arai,
H.
Kojima.
K. Otsuka.
M. Kawano, H.
Ishimura and H. Tokuda, Toshiba Corporation, Kawasaki,
JAPAN
8:45
a.m.
DJ
NEW PSEUDOMORPHIC N-/N
+
GaAs/InGa As/GaAs
109
POWER
HEMT
WITH HIGH BREAKDOWN VOLT¬
AGES,
T.
Fujii,
S.
Sakamoto,
T. Sonoda.
N.
Kasai,
S. Tsuji.
M. Yamanouchi, S. Takamiya and Y. Kashimoto. Mitsubishi
Electric Corporation, Hyogo,
JAPAN
9:05
a.m.
D.4 e.2em GATE PSEUDOMORPHIC
INVERTED
HEMT
113
FOR HIGH SPEED DIGITAL ICs, H. Tsuji, H. Fujishiro,
M. Shikata. K. Tanaka and S. Nishi,
Oki
Electric Industry
Co.. Ltd., Tokyo, JAPAN
SESSION El: COMMERCIAL APPLICATIONS FOR
133
MMICs
8:(X) a.m.
DeAnza I—U
Chairmen: H. Hung. COMSAT Laboratories, Clarksburg, MD
S.
Binari.
Naval Research Laboratory, Washington, DC
8:05
a.m.
E1.1 HIGH VOLUME GaAs
1С
APPLICATIONS, (Invited Pa-
135
per), H. Malone. M. Dydyk, and D. Matthews, Motorola,
Inc., Scottsdale, AZ, V. Nair and G. Norris, Motorola, Scotts-
dale, AZ, and W. Seely, Motorola, Chandler, AZ
8:35
a.m.
E1.2 MMIC FAMILY FOR DBS DOWNCONVERTER WITH
139
PULSE-DOPED GaAs MESFETs,
N.
Shiga, T. Sekiguchi,
S. Nakajima. K. Otobe,
N.
Kuwata, K. Matsuzaki and H.
Hayashi, Sumitomo Electric Industries, Ltd., Yokohama, JA¬
PAN
8:55
a.m.
E1.3 A COST EFFECTIVE TRUE EUROPEAN DBS LOW
143
NOISE CONVERTER,
С
Caux, P. Gamand, and M. Pertus,
Philips Microwave Limeil (PML)ILEP, Limeil-
Brevannes,
FRANCE
9:15
a.m.
E1.4 LOW CURRENT GaAs MMIC FAMILY WITH
A MIN-
147
IATURIZED BAND-STOP FILTER FOR Ku-BAND
BROADCAST SATELLITE APPLICATIONS, T. Yoshi-
masu, K. Sakuno,
N.
Matsumoto, E. Suematsu, T. Tsukao
and T.
Tornita,
SHARP Corporation,
Nara,
JAPAN
Ю:
K) a.m.
O£ THE FABRICATION PROCESS OF AIGaAs/GaAs HBTs
117
WITH LOW BASE RESISTANCE AND LOW COLLEC¬
TOR CAPACITANCE FOR MGb/s
1С
CHIP SETS, H. Ma-
suda. K. Mochizuki, M. Kawata. K. Ishikawa, K.
Milani,
M.
Miyazaki
and
С.
Kusano, Hitachi,
Ltd., Tokyo,
JAPAN
10:30
a.m.
Dut
A 456HI
AIGeAs/GeAs
НВТ
1С TECHNOLOGY,
S.
ì.
121
Prasad.
В.
Vetanen.
С.
Haynes. S.
Park, I. Beers,
S.
Dia¬
mond,
G.
Pubanz,
}. Ebner,
S.
Sanietevici and
A. Ágoston.
Tektronix, Beaverton, OR
D.7 MODELING OF
SEŁF-HEATING
IN GaAs/AIGeAs
125
HBT s FOR ACCURATE CIRCUIT AND DEVICE
АЈЧАМѓЅЕЅ,
V.
Baureis.
D.
Seitzer,
Fraunhofer-
Institute for
Integrated Circuits, Eriangen, GERMANY, and U.
Schaper,
Siemens Research Laboratory, Munich, GERMANY
tlrłfta.m.
DJ
THERMAL SIMULATION AND DESIGN OF A GaAs
129
ИНИ
SAMPLE AND
HOŁD
CIRCUIT, K. Pbuhon. K.
Knudsen, j. Corcoran, Hewlett-Packard Laboratories, Palo
Aito,
CA,
K.-C. Wang.
R.
Pierson,
R.
Nubling and
И.-С.
Chang. Rockwell International Science Center, Thousand
Oaks,
CA
SESSION E2: MILLIMETER-WAVE SOURCES AND
151
AMPLIFIERS
10:05
a.m.
DeAnza I—II
Chairmen: H. Hung, COMSAT Laboratories, Clarksburg,
M D
S.
Binari, Naval Research
Laboratory,
Washington, DC
10:10
a.m.
E2.1 MESFET MMIC
KA-BAND TRANSMITTER
PERFOR-
153
MANCE
FOR HIGH
VOLUME SYSTEM APPLICA¬
TIONS, J.
Mondai,
R.
Becker,
J. Geddes,
T. Contolatis, M.
Vickberg, D.
Carlson,
S. Bounnak,
C. Anderson, and
V.
Sokolov,
SRC, Honeywell,
Bloomington, MN
10:30
a.m.
E2.2
A MONOLITHIC Ka-BAND TRANSMITTER USING
157
0.25
џт
GaAs MESFET TECHNOLOGY, H. Wang, M.
Aust, D. Yang, E.
Rezek,
В.
Allen,
L.
Fletcher, TRW,
Re¬
dondo
Beach, CA, and R. Becker,- Honeywell, Inc., Minne¬
apolis, MN
10:50
a.m.
E2.3 A 0.2S-WATT THREE-STAGE Q-BAND MESFET
MON-
161
OLITHIC POWER AMPLIFIER, H. Yang, R. Herman, K.
Angel and
A. Chao, Magnavox
Government and Industrial
Electronics Company West Coast Operations,
Terranee,
CA,
M.
Schindler,
M.
Atderstein.
Y. Tajima, and D.
Danzilio,
Raytheon Corporation,
Lexington,
MA
11:10
a.m.
E2A
Ш
GHz
inAIAvInGaAs
HEMT
MONOLITHIC
INTE-
165
GRATED FREQUENCY
DOUBLER, Y.
Kwon,
D. Pavli-
dis, P. Marsh, M. Tutt, G. Ng and T.
Brock. The University
of
Michigan,
Ann Arbor, Ml
TUESDAY, OCTOBER
22
SESSION F: MODELING, CHARACTERIZATION AND
169
RELIABILITY PHYSICS FOR SUCCESS
AND FAILURE
1:45
p.m.
DeAnza
1-11
Chairmen: K. Gleason, Cascade Microtech, Beaverton, OR
P. Wallace. Anadigics Inc., Warren, NJ
1:50 p.m.
F.I YIELD DETERMINATION AND DESIGN
OPTIMIZA-
171
TION
OF GaAs MESFETs USING A PHYSICAL SIMU¬
LATOR,
G. Bilbro.
D. Stoneking. and R. Trew, North Car¬
olina State University, Raleigh, NC
2:10 p.m.
F.2 CAD FOR GaAs
1С
MANUFACTURE-ABILITY—THIR-
175
TEEN ISSUES IN
FET
PHYSICS, P. Ladbrooke. A. Hill
and J. Bridge. GaAsCode Limited, Cambridge, ENGLAND
2:30
p.m.
F.3 MODELING
INTERMODULATION
DISTORTION IN
173
GaAs MESFETs USING PULSED I-V CHARACTERIS¬
TICS, W.
Sîruble. S. Chu. M.
Schindler.
Y. Tajima and J.
Huang,
Raytheon Company.
Lexington.
MA
2:50 p.m.
F.4
DEVICE TESTING FOR THE DEVELOPMENT OF AN
183
HBT
К
PROCESS, S. Diamond. S.
Prasad,
J.
Ebner.
G.
Pubanz,
B. Vetanen, C.
Haynes. S.
Park and t. Beers. Tek¬
tronix, inc., Beaverton, OR
3:40 p.m.
F.5 PREDICTING OPERATING TEMPERATURES FOR
187
GsAs
Ks,
D. Smith, TriQuint Semiconductor, Inc., Beaver¬
ton, OR
4:00 p.m.
F.6 RELIABILITY OF STATE-OF-THE-ART GaAs PSEU-
191
DOMORPHIC LOW-NOISE HEMTs, W. Hu. P.
Chao.
M.
Kao.
P. Ho,
R. Finke
and A. Swanson, General Electric Com¬
pany, Syracuse, NY
4:20 p.m.
FJ DIELECTRIC FILM STRESS INFLUENCES ON GeAs
195
MESFET GATE BREAKDOWN, B. Odekirk. TriQuint
Semiconductor, inc., Beaverton, OR
4:4«
p.m
FJ EXPEWMENTAL EVIDENCE OF
Ti/Pi/An-GïAs
IN-
198
TEKACnON
OSTAINED
BY MEANS OF
ТЕМ
TECH¬
NIQUE, F.
Magistrali,
D.
Sala, Telettra
S.p.A.—Q&R,
Mil¬
ano,
ITALY,
M.
Vanzi,
Telettra S.p.A.—Q&R, Bologna,
ITALY, P.
Valii,
University of
Padova, Padova,
ITALY
md
J.
Turner, Plessev Research Caswell, UNITED KINGDOM
SESSION G: DIGITAL COMMUNICATION CIRCUITS
203
1:45
p.m.
DeAnza III
Chairmen: H. Yuan, Texas Instruments, Dallas,
TX
F.
Lee, GigaBit Logic, Newbury Park,
С А
1:50 p.m.
G.I MONOLITHIC ULTRA-HIGH-SPEED GaAs HBT OP-
205
TICAL
INTEGRATED RECEIVERS, K. Pedrotti,
N.
Sheng. R. Pierson, Jr.. C. Farley. M. Rosker, and M. Chang,
Rockwell International Corporation, Thousand Oaks, CA
2:10 p.m.
G.2 MONOLITHIC INTEGRATION OF 5Gbps OPTICAL RE-
209
CEIVER BLOCK FOR SHORT DISTANCE COMMUNI¬
CATION,
С
Takáno,
К.
Tanaka,
A. Okubora and
J. Kasa-
hara, Sonv
Corporation Research Center, Yokohama, JAPAN
2:30
p.m.
G.3 PSEUDOMORPHIC 2DEG
FET
ICs FOR ULTRA HIGH-
213
SPEED OPTICAL COMMUNICATION SYSTEMS WITH
AN EXTERNAL OPTICAL MODULATOR, Y. Suzuki, T.
Suzaki. Y. Ogawa. W. Liu. S. Fujita and A. Okamoto, NEC
Corporation, Kawasaki, JAPAN
2:50 p.m.
G.4
10
Gbit/s BIT-SYNCHRONIZER WITH AUTOMATIC
217
RETIMING CLOCK ALIGNMENT USING QUANTUM
WELL AlGaAs/GaAs/AlGaAs TECHNOLOGY, P. Wen-
nekers, U.
Nowotny.
A. Huelsmann, G. Kaufel, K. Koehler,
B. Raynor and
3.
Schneider,
Fraunhofer
institute
fuer
Ange¬
wandte
Festkoerperphysik, Freiburg, GERMANY
3:40
p.m.
G.5 A lGb/s
8x8
SELF-ROUTING SWITCH LSI FOR BROAD-
221
BAND ISDN, S. Seki, H. Yamada, M. Tsunotani, Y.
Sano.
Y.
Kawakami and M. Akiyama,
Oki
Electric Industry Co.,
Ltd., Tokyo, JAPAN
4:00 p.m.
G.6 A FULLY DIFFERENTIAL HIGH SPEED, HIGH
FI-
225
DEHTY CROSSPOINT
SWITCH FAMILY DESIGNED
WITH SCFL STANDARD CELLS, R.
Savara,
D.
Larson,
and P. Hamilton. TriQuint Semiconductor, Beaverton, OR
4:20 p.m.
G.7 HIGH SPEED
8:1
MULTIPLEXER AND
1:8
DEMULTI-
229
PLEXER ICs USING GaAs DCFL CIRCUIT, K. Tanaka,
M. Shikata, T. Kimura. Y.
Sano
and M. Akiyama,
Oki
Elec¬
tric Industry Co., Ltd., Tokyo, JAPAN
4:40
p.m.
G.8 A
27
Gb/s AIGaAs/GaAs HBT
4:1
MULTIPLEXER
ÌC,
K.
233
Runge,
D.
Daniel,
J.
Gimlett, Bell Communications Re¬
search, Red Bank, NJ, R. Nubling, R. Pierson, M. Chang,
K. Wang, and D. Chen, Rockwell International Science Cen¬
ter, Thousand Oaks, CA
ІХ
WEDNESDAY, OCTOBER
23
SESSION H: CONTROL CIRCUITS AND
OSCILLA-
237
TORS
8:00 a.m.
DeAnza I—II
Chairmen:
A. Podeli.
Pacific Monoiithics, Sunnyvale, CA
M.
Schindler,
Raytheon Company, Lexington, MA
8:05
a.m.
H.I DC-20 GHz MMIC MULTI-BIT DIGITAL
ATTENUA-
239
TORS WITH ON CHIP
TTL
CONTROL, B. Khabbaz, A.
Pospishil, E.
Schindler,
ITT Avionics, Nutley, NJ, H. Singh
and
1.
Jorgenson. ITT-GTC, Roanoke,
VA
8:25 a.m.
H.2 LOW-LOSS, HIGH POWER, BROADBAND GaAs MMIC
243
MULTI-BIT DIGITAL ATTENUATORS WITH ON-CHIP
TTL
DRIVERS,
F. Ali, S.
Mitchell and
A. Podeli,
Pacific
Monoiithics. Sunnyvale, CA
8:45
a.m.
H.3 AN ULTRA BROADBAND DC-12GHZ 4-BIT GaAs
247
MONOLITHIC DIGITAL ATTENUATOR, F. McGrath and
R. Pratt, M/A-Com, inc., Lowell, MA
9:05
a.m.
H.4 A PRODUCTION READY,
6-18
GHz FIVE-BIT PHASE
251
SHIFTER WITH INTEGRATED CMOS COMPATIBLE
DIGITAL INTERFACE CIRCUITRY, K. Simon, M.
Schin¬
dler,
V. Mieczkowski, P. Newman, M. Goldfarb, E. Reese
and B. Small. Raytheon Company, Lexington. MA
10:10 a.m.
H.5
Х
-BAND
HBT VCO WITH HIGH-EFFICIENCY CB
255
BUFFER AMPLIFIER,
N.
Wang and W. Ho, Rockwell In¬
ternational, Thousand Oaks, CA
10:30
a.m.
НЛ
A
15
GHz MONOLITHIC LOW PHASE NOISE VCO US-
259
ING AIGaAs/GaAs HBT, Y. Yamauchi. K. Osafune, NTT
LS! Laboratories, Atsugi, Kanagawa, JAPAN. H. Kamit-
suea,
ÁTR
Optical and Radio Communications Research
Laboratories, Atsugi, Kanagawa, JAPAN, and M. Muragu-
chi, NTT Radio Communication System Laboratories, Atsugi,
Kanagawa, JAPAN
ИИ50
a.m.
НЛ
HIGH EFFICIENCY MONOLITHIC Ka-BAND OSCIL-
263
ŁATORS
USING luAIAs/InGaAs HEMTs, Y. Kwon, G.
Ng. D. Pavlidis, R. Lai, T. Brock, The University of Michi¬
gan, Ann Arbor, Ml,
1.
Castagne
and
N.
Linh, PICOGICA,
Les
Ulis
Cedex,
FRANCE
ihJOa.m.
МЛ
MONOLITHIC RECEIVERS WITH INTEGRATED
267
ТЕМГЕКАТОКЕ
COMPENSATION FUNCTION, G.
Dow, T. Chen. T. Ton, M. Aust, j. Yonaki. R. Carandang.
D. Yang, M. QeadroHi, and S. Andrews, TRW,
Redondo
Вежћ,
CA, and
W.
Titus,
Hittite
Microwave Corp., Woburn.
MA
SESSION I: MANUFACTURING TECHNOLOGY
271
8:00
a.m.
De Anza
III
Chairmen:
J
.
Hwang, Lehigh University, Bethlehem, PA
R. Sadler, ITT-GTC, Roanoke,
VA
8:05
a.m.
I.I WHAT GaAs CHIPS SHOULD COST, (Invited Paper), R.
273
Skinner, Integrated Circuit Engineering, Scottsdale, AZ
8:35
a.m
1.2
MANUFACTURING DIGITAL IC s WITH GaAs—THE
277
PUSH FOR
100%
YIELD, M. Wilson,
С
Imboden, D.
Chasson, M. Roberts, R. Rosenberry and B. Welch, Cray
Computer Corporation, Colorado Springs, CO
8:55
a.m.
1.3
SUBHALF-MICRON GATE GaAs MESFET PROCESS
281
USING PHASE-SHIFTING-MASK TECHNOLOGY, T.
Kimura, T.
Saito,
H.
Jinbo,
T.
Ichioka,
К.
Inokuchi,
Y.
Ya-
mashita and Y.
Sano,
Oki
Electric Industry Co., Ltd., Tokyo,
JAPAN
9:15 a.m.
1.4
GaAs MMIC WAFER LEVEL MAPPING FOR MATE-
285
RIAL AND PROCESS DIAGNOSTICS, H. Kanber, D.
Wang, E. Pan, Hughes Aircraft Company,
Terranee,
CA, and
D. Look, Wright State University, Dayton, OH
10:10
a.m.
1.5
A COMPARATIVE STUDY OF GaAs MESFET BACK-
289
GATING, L. Salmon, Brigham Young University,
Provo, UT
10:30
a.m.
1.6
SUPPRESSION OF LOW FREQUENCY OSCILLATIONS
293
FOR HIGH GAIN GaAs AMPLIFIERS,
T
Koketsu, Y.
Hatta,
N.
Matsunaga, M.
Arai,
Y.
Kawada, A. Takai, Y.
Umemoto and H. Matsuda, Hitachi, Ltd., Tokyo, JAPAN
10:50
a.m.
1.7
MAGNETRON REACTIVE TON ETCHING FOR GaAs
297
1С
MANUFACTURING TECHNOLOGY, M. Namaroff, J.
Sasserath, Materials Research Corporation,
Orangeburg,
NY,
M. Meyyappan, Scientific Research Associates, Inc., Glaston-
bury, CT, G. McLane, H. Lee and M. Cole, U.S. Army
Electronic Technology and Devices Laboratory, Fort Mon-
mouth, NJ
11:10
a.m.
1.8
MONOLITHIC INTEGRATION OF GaAs LED ARRAY/
301
Si CMOS LOGIC, J. Yang, A. Taddiken and Y.
Kao,
Texas
Instruments, Dallas,
TX
WEDNESDAY, OCTOBER
23
PANEL SESSION
3:
Do PCMs predict circuit performance?
12:1X1
пооп-ігЗО
DeAnza
1-1
1
Panel Organizer and Moderator: W. Mickanin
TriQuint Semiconductor
Beuwrton, OR
Panel Members: Ed Stoneham. Pacific Monolilhics, Sunnyvale,
C A:
Raj Sahai. Rockwell International, Newbury Park,
С
A: Jaime Tene-
dorio. Harris Microwave Semiconductor, Milpitas,
C A; Mark
Wilson.
Cray Computer Corp., Colorado Springs. CO
305
PANEL SESSION
4: 307
Manufacturability of Active Layers
12:00
noon-l^O p.m.
DeAnza III
Panel Organizer and Moderator: S. Wemple
AT&T Bell Laboratories
Reading, PA
Panel Members: Rob Christ, TriQuint, Beaverton, OR; Jack Salerno.
Kopin, Taunton, MA: Tom O Neill, Band Gap Technology, Broom-
field, CO:
Hong
-На
Vuong, AT&T, Reading. PA; Denny Houng, Hew¬
lett-Packard, Palo Alto, CA
SESSION J: ADVANCED MMIC AMPLIFIERS AND
TECHNIQUES
309
1:45 p.m.
DeAnza I-
-11
Chairmen: T. McKay. Harris Microwave Semiconductor, Milpitas, CA
C. Brandt.
Westinghouse
Science
&
Technology Center.
Pittburgh, PA
1:50
p.m.
J.I A COMPACT, HIGH GAIN,
î-ZOGHz MMIC AMPLI-
311
FIER,
T. Apel
and S.
Ludvik. Teledyne
Monolithic Micro¬
wave, Mountain View, CA
2:
Id p.m.
J.2 A NOVEL BROADBAND BIDIRECTIONAL MATRIX 31S
AMPLIFIER,
S. Chu. M.
Schindler.
A. Bertrand. Raytheon
Company, Lexingon, MA, and T. Tsukii, Raytheon Company,
Goleta,
GA
2:3(1
p.m.
J.3
5-6β
GHz HIGH-GAIN DISTRIBUTED AMPLIFIER
319
UTILIZING
ΙβΡ
CASCODE HEMTs,
С
Yuen.
Y. Pao.
and
N.
Bechtel, Litton Solid State Division, Santa Clara.
С А
2:50
p.m.
ІА
MMIC CIRCUIT OPTIMIZATION USING FIB TECH-
323
NIQUES, T.
Jshikawa,
M.
Komáru.
K. Iíoh,
S. Orisaka,
К.
Nishitani and
M. Otsubo.
Mitsubishi Electric Corporation,
Hyogo, JAPAN
3:40
p.m.
ÌS
A COMPACT 3W X-BAND GaAs MMK AMPLIFIER
327
BASED ON A NOVEL
MULTI-
PUSH-PULL CIRCUIT
CONCEPT, H. Henry. R.
Freitag.
R.
Brooks.
A. Burk,
Jr.
and M. Murphy,
4:00
p.m.
J.6 A
3.«
WATT HIGH EFFICIENCY
C-BAN0
POWER
331
MMIC, M. Gat, D. Day. S. Chan.
С
Hua
and
J.
Basset.
Avantek, Inc.
,
Santa Clara. CA
4:20 p.m.
1.7
A Ka-BAND H№H EFFICIENCY ION-IMPLANTED
335
MMIC AMPLIFIER,
H. Le. Y.
Shih.
T.
Chi.
L. Fong and
K. K astí, Hughes
Aircraft Company,
Torrante,
CA
4:40
p.m.
JA
HIGHLY DENSE »UAL CHANNEL
С-Х-Ки
AND
6-
»GHz MMIC POWER AMPLIFIERS,
A Píatzter. K.
Hetz¬
ler
and J. Cole. Raytheon Research Division, Lexington, MA
SESSION K: DIGITAL SYSTEM COMPONENTS
343
1:45
p.m.
DeAnza HI
Chairmen: T.G. Cokinos. General Electric, Syracuse, NY
T.
Andrade,
Gazelle Mkrocircuits. Santa Clara, CA
1:50 p.m.
K.I A DIGITAL ASIC IMPLEMENTATION OF A VIDEO
345
FILTER FOR SYNTHETIC APERTURE RADAR, B. Re-
mund.
Sandia
National Laboratories, Albuquerque, NM, J.
Salinas and J. Chow, GigaBit Logic, Newbury Park, CA
2:10 p.m.
K.2 A 500MHz PHASE GENERATOR FOR SYNTHETIC AP-
349
ERTURE RADAR WAVEFORM SYNTHESIZERS, B.
Remund and C. Srivatsa, GigaBit Logic, Inc., Newbury Park,
CA
2:30 p.m.
K.3 A FAST SETTLING GaAs ENHANCED FREQUENCY
353
SYNTHESIZER,
J. Naber, H.
Singh,
R.
Sadler, ITT Gallium
Arsenide Technology Center, Roanoke,
VA,
W. Tanis,
A. Ko-
shar and
G. Segalla,
ITT Avionics, Nutley, NJ
2:50 p.m.
K.4 A
23.6
GHz
SUB-m
-μιη
E/D MODFET
DIVIDE-by-32/64
357
STATIC PRESCALER,
H. Rondin,
J.
Strážnicky.
H.
Jekat,
A. Nagy,
Α.
Fischer-Colbrie,
D. Mars
and R. Jaeger, Hewlett-
Packard Company, Palo Alto, CA
3:40 p.m.
K.5 A 14-BIT, I Gs/s
DAC
FOR DIRECT DIGITAL SYNTHE-
361
SIS APPLICATIONS, F. Weiss and T. Bowman, TriQuint
Semiconductor, Inc., Beaverton, OR
4:00 p.m.
K.6 A GIGASAMPLE/s
5
BIT ADC WITH ON-CHIP TRACK
365
&
HOLD BASED ON AN INDUSTRIAL
1
μΐη
GaAs
MESFET E/D PROCESS, R.
Hagelauer,
F. Oehier, G.
Roh-
mer, J.
Sauerer and
D.
Seitzer, Fraunhofer-Institute für Inte¬
grierte Schaltungen, Erlangen,
GERMANY
4:20 p.m.
K.7
A HIGH-PERFORMANCE
GaAs PIN ELECTRONICS 369
CHIP
FOR HIGH-SPEED
GENERAL
PURPOSE ATE,
S.
Taylor,
С.
Nguyen
and B.
Davenport, TriQuint Semicon¬
ductor, Beaverton, OR
339
AUTHOR INDEX
Adachihara,
T.,
95
Ágoston,
Α.,
121
Akiyama,
M.,
221, 229
Alderstem,
M.,
161
Ali, F., 243
Allen,
В.,
157
Anderson,
С
153
Andrews, S., 267
Angel, K., 57, 161
Apel,
T.,
311
Arai,
M.,
293
Arai,
S.,
105
Archer,
J.,
49
Asai,
К.,
37
Asbeck, P.,7,
91
Assai,
F., 41
Aust,
M.,
157, 267
Basset,
J.,
331
Baureis,
P.,
125
Вееше
.
S.,
91
Bechtel, G.,49
Bechtei, N..319
Becker,
R.,
153, 157
Bedard,
В.,
61
Beers, I.,
121, 183
Bertrand,
Α.,
315
Bilbro,
G., m
Bounnak, S.,
153
Bowman,
T.,
361
Bridge, J.,
175
Briere, P.,33
Brock,
T.,
165, 263
Brooks, R.,
327
Burk,
Α.,
Jr.,
327
Campbell,
Α.,
79
Cappon,
Α.,
91
Carandang,
R.,
267
Carlson, D..153
Castagne,
J.,
263
Caux,
С,
143
Cayo,
J.,
19
Chan,
S.,
331
Ctiang,
С,
19
Chang,
M. C,
129
Chang,
M. E.
7,91,205, 233
Chao,
Α.,
161
Chao,
R.
191
ChassOB, D.,
277
-CbeiuĐ.,91.233
Chen,
f.. 267
Chi,
T.,
335
Chow,
J,
345
Ch»,
S.,
179, 315
Chung,
Y.,
23
Cołbeth, R.,
23
Ceke. J.,
339
Cole.
M.,
297
Contoíatis,
T.,
153
Corcoran,
J.,
7, 129
Daniel,
D.,
233
Danzilio,
D.,
161
Davenport,
В.,
369
Davis,
G.,
23
Day,
D.,
331
Degelormo,
J.,
101
de Saint
Leger,
О.,
33
Diamond, S.,
121, 183
Dow, G.,
267
Dydyk, M.,
135
Ebner, J.,121, 183
Elliott,
К.,
67
Farley,
С,
205
Fay, J.,
75
Finkę, R.,
191
Fischer-Colbrie,
Α.,
357
Fleischman,
Α.,
101
Fletcher, L.,
157
Fong, L.,
335
Frank, D.,
101
Freitag,
R.,
327
Fry,
K.,
57
Fujii,
T.,
109
Fujishiro. H.,
113
Fu
jita,
S.,
213
Fulkerson, D.,
71
Gamand,
P.,
143
Gat,
M.,
331
Geddes,^,
153
Gee.
W,
75
Gerson,
H.,
41
Gimlett, j.,233
Goldfarb,
М.,251
Grider, D.,71
Gupta,
R.,41
Hageiauer, R.,
365
Hamilton, P.,
225
Hamilton, R.,
49
Hampsch, T.,41
Harrington, D.,
75
Harris,
M.,
19
Hatta, Y.,
293
Hayashi, H.,
139
Haynes, C,
121, 183
Henry, H.,
327
Herman,
R.,
161
Hetzler,
К..,
339
НШ,
Α.,
175
Hirano,
М.,37
Hirayama, M.,
3
Hirota,T.,53
Но, Р.,
191
Ho, W,
255
Hon jo, K.,
3
Hu, W,
191
Hua.
С,
331
Huang, J.,
179
Huelsmann, A.
, 217
Ichioka, T.,281
Imai, Y.,37,
45
imamura,
K.,
95
Imboden, C,
277
Inokuchi, K.,
281
Inoue, T.,87
Ishida, K.,
87
Ishikawa, K.,
117
lshikawa,T..323
Ishimura, H.,
105
Itoh, K.,
323
Jackson,
T.,
101
Jaeger, R.,
357
Jekat,
H.,
357
Jensen, J.,
7
Jinbo, H.,
281
Jorgenson, J.,
239
Kamitsuna, H.,
259
Kanber, H.,
285
Kao,
M.,
191
Kao,
Y,
301
Kasahara,J.,209
Kasai,
N.,
109
Kasel,K.,335
Kashimoto, Y,
109
Katzin, R,
61
Kaufei,
G.,
217
Kawada, Y,
293
Kawakami, Y.,
221
Kawano, M.,
105
Kawata, M.,
117
Khabbaz, B.,239
Kiehl, R.,101
Kirrmra,
T.,
229, 281
Kitaura,
Y,
87
Knudsen,
К.,
129
Knudson,
Α.,
79
Koehler,
К.,
217
Kojima,
H.,
105
Koketsu,
T.,
293
Komáru,
M.,
323
Konno,
M.,
87
Koshar, A.,353
Kusano,
С,
117
Kuwata, N.,
139
Kwok,C.,91
Kwon, Y,
165, 263
Ladbrooke, P.,
175
Lai,
R.,
263
Langworthy, J.,
79
Larson,
D.,
225
LaRue, R.,23
Le, H.,
335
Lee, H.,
297
Leybovich, L,
75
Linn,
N.. 263
Liu, W,
213
Long,
S.,
83
Look,
D.,
285
Ludvik,
S.,
311
Mactaggart,
L,
71
Maderic,
В.,
75
Maesel,
M.,
49
Magistrali,
F., 199
Malone,
H.,
135
Mars,
D.,
357
Marsh, P.,
165
Masuda, H.,
117
Mathews, D.,
135
Matsuda, H.,
293
Matsumoto, N.,
147
Matsunaga, N.,293
Matsuzaki, K.,
139
McGrath, F.,247
McLane, G.,297
McMorrow, D.,79
Meyyappan, M.,
297
Mieczkowski,
V,
251
Mitani, K.,
117
Mitchell,
S.,
243
Miyazaki,
M.,
117
Mochizuki, K.,
117
Mondai, J.,
153
Mori,
T.,
95
Muraguchi, M.,53,
259
Murphy,
M.,
327
Muto,
S.,
95
Naber,
J.,
353
Nagy,
Α.,
357
Naik, L,
75
Nair, V.,
135
Nakajima, O.,
45
Nakajima,
S.,
139
Nakarrmra, M.,
45
Namaroff, M.,
297
Nary, K.,
83
Newman, P.,
251
Ng, G.,
165, 263
Nguyen,
C,
369
Nicalek, T.,75
Ning,
T.,
15
Nishi,
S.,
ИЗ
Nishitani, K.,
323
Nohava,
J.,
71
Nohava,
T.,
71
Norris,
G.,
135
Nottenburg,
R.,
7
Notthoff,
J.,
75
Nowotny, U., 217
Nubling,
R.,
91, 129, 233
Obara,
M.,
3
Odekirk,
В.,
195
Oehtcr, F.,365
Ogawa, Y.,213
Ohnishi, H.,
95
Okamoto,
Α.,
213
Oki,
Α.,
7
iii
Okubora, A..209
O Neill,
T.,
11
Orisaka, S.,
323
Osafune. K.,259
Otobe, K.,
139
Otsubo. M.,
323
Otsuka. K.,
105
Ou. W.,49
Palmateer, L.,
101
Pan.
E.,
285
Panelli,
J..
49
Pao, Y,
319
Park, S.,
121, 183
Parsey.
J.,
Jr.,
11
Pavlidis, D..
165.263
Pedrotti, K.,
205
Perea, E.,
33
Pertus,
M..
143
Petersen. E.,79
Pierson, R.,Jr..
129,205,233
Platzker, A.,339
Podeli,
Α.,
243
Pospishil, A.,239
Pouiton. K.,
129
Prasad,
S. J.,
121, 183
Pratt. R.,
247
Pubanz, G.,
121, 183
Ouadrozzi, M.,
267
Raynor,
В.,
217
Reese,
E.,
251
Remund, B..345,
349
Rezek,
E.,
157
Roberts,
M.,
277
Rohdin.
H.,
357
Rohmer, G.,
365
Rosenberry,
R.,
277
Roster.
M.
J.,
205
Rossi, D.,
23
Rüden.
P..
71
Runge,
К..
233
Sabin,
S.,
19
Sadler, R.,
353
Saito,
T.,
281
Sakamoto,
S.,
109
Sakuno.
К.,
147
Sala. D.,
199
Salinas, J.,
345
Salmon,
L.,
289
Sanchez,
L.,
75
Saniclevici,
S.,
121
Sano, E.,
45
Sano.
Y,
221, 229. 281
Sasserath. J.,297
Sauerer, J., 365
Savara,
R.,
225
Schaper, U.,
125
Schindler,
M.,
161, 179.251, 315
Schineller,
E.,
239
Schneider,
J.,
217
Seely,
W,
135
Segalla, G.,
353
Seitzer,
D.,
125, 365
Sęki,
S..
221
Sekiguchi.T.,
139
Sheng, N.,205
Shiga, N.,
139
Shih, C.,23
Shih, Y.
335
Shikata, M.,
113,229
Simon, K.,
251
Singh,
H.,
239, 353
Skinner,
R.,
273
Small,
В..
251
Smith,
D.,
187
Sokolov, V,
153
Sonoda,
T.,
109
Sorbello, R.,
41
Srivatsa, C,
349
Stapor, W.,79
Stoddard. M.,
75
Stoneking, D.,
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| genre_facet | Konferenzschrift 1991 Monterey Calif. |
| id | DE-604.BV005943659 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:37:19Z |
| institution | BVB |
| institution_GND | (DE-588)5068088-2 |
| isbn | 078030196X 0780301978 0780301986 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-003725000 |
| oclc_num | 489792418 |
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| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | XV, 372 S. Ill., graph. Darst. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | Inst. of Electrical and Electronics Engineers |
| record_format | marc |
| spelling | GaAs IC Symposium 13 1991 Monterey, Calif. Verfasser (DE-588)5068088-2 aut Technical digest 1991 Monterey, California, October 20 - 23, 1991 GaAs IC Symposium New York, NY Inst. of Electrical and Electronics Engineers 1991 XV, 372 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Circuits intégrés - Congrès ram Semiconducteurs à l'arséniure de gallium - Congrès ram Galliumarsenid-Bauelement (DE-588)4155861-3 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Monterey Calif. gnd-content Galliumarsenid-Bauelement (DE-588)4155861-3 s DE-604 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003725000&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Technical digest 1991 Monterey, California, October 20 - 23, 1991 Circuits intégrés - Congrès ram Semiconducteurs à l'arséniure de gallium - Congrès ram Galliumarsenid-Bauelement (DE-588)4155861-3 gnd |
| subject_GND | (DE-588)4155861-3 (DE-588)1071861417 |
| title | Technical digest 1991 Monterey, California, October 20 - 23, 1991 |
| title_auth | Technical digest 1991 Monterey, California, October 20 - 23, 1991 |
| title_exact_search | Technical digest 1991 Monterey, California, October 20 - 23, 1991 |
| title_full | Technical digest 1991 Monterey, California, October 20 - 23, 1991 GaAs IC Symposium |
| title_fullStr | Technical digest 1991 Monterey, California, October 20 - 23, 1991 GaAs IC Symposium |
| title_full_unstemmed | Technical digest 1991 Monterey, California, October 20 - 23, 1991 GaAs IC Symposium |
| title_short | Technical digest 1991 |
| title_sort | technical digest 1991 monterey california october 20 23 1991 |
| title_sub | Monterey, California, October 20 - 23, 1991 |
| topic | Circuits intégrés - Congrès ram Semiconducteurs à l'arséniure de gallium - Congrès ram Galliumarsenid-Bauelement (DE-588)4155861-3 gnd |
| topic_facet | Circuits intégrés - Congrès Semiconducteurs à l'arséniure de gallium - Congrès Galliumarsenid-Bauelement Konferenzschrift 1991 Monterey Calif. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003725000&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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