Digest of technical papers:
Gespeichert in:
| Körperschaft: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
Tokyo
Japan Soc. of Applied Physics
1991
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | XV, 119 S. Ill., graph. Darst. |
Internformat
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| 111 | 2 | |a Symposium on VLSI Technology |n 11 |d 1991 |c Oiso |j Verfasser |0 (DE-588)5070233-6 |4 aut | |
| 245 | 1 | 0 | |a Digest of technical papers |c 1991 Symposium on VLSI Technology, May 28 - 30, 1991/Oiso |
| 264 | 1 | |a Tokyo |b Japan Soc. of Applied Physics |c 1991 | |
| 300 | |a XV, 119 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Literaturangaben | ||
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| 650 | 0 | 7 | |a VLSI |0 (DE-588)4117388-0 |2 gnd |9 rswk-swf |
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Datensatz im Suchindex
| _version_ | 1804120137187459072 |
|---|---|
| adam_text | CONTENTS
VLSI Technology Workshop
on
Key Technologies
for
0.5/лп
Manufacturing
..................... xiii
Session
1 :
Welcome and Plenary Session
1-2
Possibilities of CMOS Mainframe and Its Impact on Technology R&D (Invited)
.........
..........................................................
A. Masaki
1
1-3
Neural Networks: Hardware Silicon for Wetware Algorithms (Invited)
. . .
R. M, Gardner
5
Session
2:
DRAM
2-1
A Novel Trench Capacitor Structure for ULSI
DRAMs...........................
.....................................
T.
V. Rajeevakumar and
G. B.
Bronner
7
2-2
Two Step Deposited Rugged Surface (TDRS) Storagenode and Self Aligned Bitline-Contact
Penetrating Cellplate (SABPEC) for
64Mb
DRAM STC Cell
......................
............
H. Itoh, Y. Miyagawa, M. Takahashi, T. Mitsuhashi, Y. Kimura, A. Endoh,
Y. Nagatomo, M. Yoshimaru, F. Ichikawa and M.
Ino
9
2-3
A Novel DRAM Memory Cell with Inclined-Channel Transistor and Ring-Like Structure Produc¬
ed through Self-Aligned Storage Contact Process
............................
............
K. Iguchi,
N.
Shinmura, T.
Doi,
S.
Kakimoto,
A. Kawamura,
0.
Yamazaki,
H. Tabuchi, T. Fukushima, K. Mitsuhashi, K.
Uda
and J. Takagi
11
2-4
Multilayer
Verticai
Stacked Capacitors (MVSTC) for 64Mbit and 256Mbit
DRAMs......
........................................................
D. Temmler
13
Session
3:
Reliability I (Hot Carrier Effect)
3-1
Hot Carrier Degradation Mechanism under Pulsed Stress in MOSFETs
...............
........................................
R. Nagai, K.
Umeda
and E. Takeda
15
3-2
Voltage and Temperature Dependence of Interface Trap Generation by Hot Electrons in
P- and N-Poly Gated MOSFETs
......................
С. С.
-H.
Hsu and
T. H.
Ning
17
3-3
New Charge
Pumping Method for Direct Measurement of Spatial Distribution of Fixed
Charge
....................
M. Tsuchiaki, H. S. Momose, T. Morimoto and H. Iwai
19
3-4
Structure Dependence of the Hot-Carrier Degraded Region in Deep
Submicron
MOS
Devices
........................................
A. Hamada and E. Takeda
21
Session
4:
SRAM
4-1
A High-Performance SRAM Memory Cell with LDD-TFT Loads
.....................
..........
K. Tsutsumi, Y. Inoue, S. Murakami, O. Sakamoto, M. Ashida and Y. Kohno
23
4-2
1.5V Supply Voltage, Low Standby Current SRAMs
............................
Y. Uemoto, E.
Fujii,
T.
Furuta,
T.
Shimazaki,
H.
Okuyama,
E. Aono,
M.
Yoshii
and K.
Senda
25
4-3
Hot-Carrier Induced lON/tOFF Improvement of Offset PMOS TFT
...................
........
H. Furuta, F. Hayashi, M. Ohkawa, T. Shimizu, M.
Ando, Y.
Inoue and I. Sasaki
27
4-4
A O.Sjum Diode Load
4Mb
SRAM Technology Using Double-Level
Al Plug
Metal Process
. .
.......
R.
Sundaresan, C. C.
Wei,
M. Zamanian, F. S,
Chen,
R. O.
Miller,
R. L.
Hodges,
W. Gaskins,
P. Sagarwala, L
Nguyen, J. Huang,
C.
Spinner,
G. S. Stagaman, W.
Hata,
Y. S. Lin, F.
Bryant and
F. T.
Liou
29
ix
4-5
Process Integration for a 2ns CycleMns Access
51
2K CMOS SRAM
................
.........
R. Joshi, S. Klepner, S. Basavaiah, A. Ray, K. Petrillo,
N.
Mazzeo, T. Bucelot,
S.
Brodsky,
M.
Jaso,
T.
Brunner,
E. Petrillo,
К.
Stein,
T.
Lii,
R.
Franch,
B.
Chappell,
T. Chappell and S.
Schuster 31
Session
5:
Interconnect
Technology
5-1
Influence
of Under-Metal
Planes on Al(11
1)
Crystal
Orientation
in Layered
Al
Conductors
.....................
H. Shibata,
N.
Ikeda, M. Murota, Y. Asahi and K.
Hashimoto
33
5-2
0.25/ím
Contact
Hole Filling
by Al-Ge Ref
low Sputtering
........................
.........................................
К.
Kikuta,
T.
Kikkawa and
H.
Aoki
35
5-3
High Rate Deposition Copper CVD
.........................N.
Awaya and Y.
Arita
37
5-4
Copper Interconnection with Tungsten Cladding for
U
LSI
........................
.................
J. S. H. Cho,
Н
-K.
Kang, M. A. Beiley, S. S. Wong and
C. H.
Ting
39
5-5
A Novel Double-Self-Aligned
TiSi2/T¡N
Contact with Selective CVD
W
Plug for
Submicron
Device and Interconnect Applications
.....................................
............................
M. S. Wang, D. Bradbury, H. K. Hu and K. Y.
Chiu
41
Session
6:
Reliability II (Dielectrics
&
Device Structures)
6-1
Improved Performance and Reliability of MOSFETs with Uitrathin Gate Oxides Prepared by
Conventional Furnace Oxidation of Si in Pure N2O Ambient
.....................
.................................
G. Q.
Lo,
W.
Ting,
J.
Ahn
and
D. L.
Kwong
43
6-2
Dependence of Thin Oxide Films Quality on Surface Micro-Roughness
...............
.....................
M. Miyashita, M. Itano, T. Imaoka, I. Kawanabe and T.
Ohmi
45
6-3
Scalability and Operating Voltage of Gate/N~ Overlap LDD in Sub-Half-Micron Regime
. . .
..........................
M. Shimizu, M. Inuishi, K. Tsukamoto and Y. Akasaka
47
6-4
Gate-Induced Drain Leakage in LDD and Fully-Overlapped LDD MOSFETs
.............
........................
S.
Parke,
J.
Moon, P. Nee, J. Huang,
C. Hu
and P.
К. Ко
49
Session 7A: Bipolar I [Room I]
7A-1 Fully SiO2 Isolated High Speed Self-Aligned Bipolar Transistor on Thin SOI
............
.....
H. Nishizawa, S.
Azuma,
T.
Yoshitake,
S.
Kawata,
T.
Ikeda,
M.
Kawaji and
A. Anzai
51
7A-2
A Thin-Base Lateral Bipolar Transistor Fabricated on Bonded SOI
...................
..................N.
Higaki, T. Fukano, A. Fukuroda, T. Sugii, Y. Arimoto and T.
Ito
53
7A-3 Selective-Polysilicon Emitter, Self-Aligned Bipolar Structure for BiCMOS VLSI Applications
........................
S. W. Sun, D. Denning, J. Hayden, M. Woo and J. Fitch
55
7A-4 Soft Error Immune
180μΐτι2
SiCOS Upward Transistor Memory Cell Suitable for Ultra-High-
Speed High-Density Bipolar Memories
.....................................
........
Y.
Idei,
T. Shiba,
N.
Homma, K. Yamaguchi, T. Nakamura, T. Onai, M. Namba,
Y. Tamaki and Y. Sakurai
57
Session 7B: Non-Volatile Memory and Other Dielectrics [Room II]
7B-1 Highly Reliable E2PROM Cell Fabricated with ETOX™ Flash Process
.................
.....
S. Lai,
N.
Mielke, G. Atwood, C.
Chao,
В.
Johnson, A. Kumar, S. Tarn and D. Tang
59
7B-2 Impact of Polarization Relaxation on Ferroelectric Memory Performance
..............
.....
R. Moazzami,
N.
Abt,
Y.
Nissan-C,
W.
H.
Shepherd,
M.
P. Brassington and
C. Hu
61
7B-3 Enhanced Reliability of Native Oxide Free Capacitor Dielectrics on Rapid Thermal Nitrided
Polysilicon
..............N.
Ajika, M.
Ohi,
H.
Arima,
T.
Matsukawa and
N.
Tsubouchi
63
Session 8A: Bipolar
II [Room I]
8A-1 An Ultra-High Emitter
Efficiency
Transistor
with a Low-Temperature Processed Polysilicon
Emitter for High-Speed Bipolar ULSIs
.....................................
...................
M. Kondo, M. Namba, T. Kobayashi, S. lijima and T. Nakamura
65
8A-2 A 26ps Selective Epitaxial Bipolar Technology
.................................
.....
T.
F. Meister,
H.
W.
Meul,
R.
Stengl,
D.
Hartwig,
R. Weyl,
I.
Kerner,
R.
Mahnkopf,
R.
Schreiter,
J.
Weng
and R.
Kopl
67
8A-3 Profile Design
Issues and Optimization of Epitaxial Si and SiGe-Base Bipolar Transistors and
Circuits for 77K Applications
...........................................
. . . .
J. D. Cressler, J. H. Comfort,
E. F. Crabbé, G. L.
Patton, J.
M. C.
Stork, J.
Y.-C. Sun
and B.
S. Meyerson
69
8A-4 55GHz Polysilicon-Emitter Graded SiGe-Base PNP Transistors
.....................
. . .
D. L
Harame, B. S. Meyerson,
E. F. Crabbé, C. L.
Stanis,
J. M. Cotte, J. M.
C. Stork,
A.
С.
Megdanis,
G. L.
Patton,
S. R. Stiffler, J. B. Johnson, J. D. Warnock, J. H.
Comfort
and J.Y.-C. Sun
71
Session 8B: Non-Volatile Memories [Room II]
8B-1 A Poly-Buffered FACE Technology for High Density Flash Memories
.................
..........................................
B. J. Woo,
Т. С
Ong and S. Lai
73
8B-2 A 5V Only 16Mbit Flash
EEPROM
Cell Using Highly Reliable Write/Erase Technologies
. . .
...................... N.
Kodarna, K.
Saitoh,
H. Shirai, T.
Okazawa and Y. Hokari
75
8B-3
A 3.42/¿m2
Flash Memory Cell Technology Conformable to a Sector Erase
............
........
H.
Kume,
T. Tanaka, T. Adachi,
N.
Miyamoto, S. Saeki, Y. Ohji, M. Ushiyama,
T. Kobayashi, T. Nishida, Y. Kawamoto and K. Seki
77
8B-4 Flash
EEPROM
Cell Scaling Based on Tunnel Oxide Thinning Limitations
..............
.............
K. Yoshikawa, S. Mori, E. Sakagami,
N.
Arai,
Y.
Kaneko
and
Y.
Ohshima
79
Rump Sessions
R-1 Lithography
.....................................N.
Nomura and P.K. Vasudev
81
R-2 Sub-Half-Micron Global Interconnection
......................
Y.
Arita
and A. Sinha
81
R-3 Manufacturing
.......................................N.
Kotani and W. White
81
R-4 Substrate Engineering
...............................N.
Endo and J.
Fi. Yeargain
82
R-5 RAMs: Physical Scaling Limit vs Die Size Limit
.........
K. Shimohigashi and
C. Y.
Yang 82
Session
9:
Deep
Submicron
CMOS and Isolation
9-1
A Fully Planarized
0.25/яп
CMOS Technology
.................................
......
D. S. Wen, W. H. Chang, Y.
Lii,
A. C. Megdanis, P. McFarland and G. B. Bronner
83
9-2
New Transistor Structure Optimization for
0.2Ђџт
CMOS Techonology
..............
. . .
.L. G. Kang, Y. T. Kang,
B. H. Roh, S.
P. Kim, Y. W. Ha, K. M. Han and
C. G.
Hwang
85
9-3
Trench Isolation Technology for
О.Збдт
Device by Bias ECR CVD
..................
..........................................
T,
Gocho, Y.
Morita and J. Sato
87
9-4
Submicron
Mechanically Planarized Shallow Trench Isolation with Field Shield
.........
...............
W. S. Lindenberger A. Kornblit, W. Lai, S. J. Hillenius and M-L. Chen
89
9-5
Improved Sub-Micron CMOS Device Performance Due to Fluorine in CVD Tungsten Silicide
................................
V. Jain,
D. Pramanik, K. Y.
Chang and
C. Hu
91
χι
Session 10:
Fine Patterning Technology
10-1
Effects of Sizing, Alignment and Defects on Projection Printing with Phase-Shifting Masks
..............................
A. K.
Pfau,
W.
G. Oldham
and A. R. Neureuther
93
10-2
Automatic Pattern Generation System for Phase Shifting Mask
....................
...........................
Y. Hirai, K. Matsuoka, K. Hashimoto and
N.
Nomura
95
10-3 3D
Lithography, Etching, and Deposition Simulation (SAMPLE-3D)
..................
..............
E. W.
Scheckler,
K. K. H. Toh, D. M.
Hoffstetter and
A. R. Neureuther
97
10-4
A Three-Dimensional
Dynamic Simulation of Borophosphosilicate Glass Flow
..........
......................................
H. Umimoto, S. Odanaka and S. Imai
99
10-5
Simultaneous Deposition and Fusion-Flow Planarization of BPSG
...................
...............
J.
Hartman,
К.
McKinley,
A. Helms,
Μ.
Logan,
W.
Kern
and
Y. Iñudo
101
Session
11:
SiGe-MOSFET
11-1
Si/SiGe p-Channel MOSFETs
.............................................
........
S. Subbanna,
V.
P. Kesan, M. J. Tejwani, P. J.
Restie,
D. J,
Mis and S. S.
Iyer
103
11-2
Graded SiGe-Channel Modulation-Doped P-MOSFETs
............................
...........
S.
Verdonckt-V.,
E.
F. Crabbe,
B. S.
Meyerson,
D. L. Harame, P. J.
Restie,
J. M. C.
Stork,
A. C. Megdanis, C. L. Stanis,
A. A. Bright,
G. M.
W.
Kroesen and A. C.
Warren
105
11-3
Channel Mobility of GeSi Quantum-Well P-MOSFET s
...........................
............................
D. K.
Nayak, J.
C. S.
Woo,
J. S. Park, K, L.
Wang
and
К. Р.
MacWilliams
107
Session
12:
Advanced MOSFET Structures
12-1
High Performance Shallow Junction Well Transistor
(SJET)
.......................
..........................................
T.
Mizuno,
Y.
Asao and J.
Koga
109
12-2
Novel Shallow Counter Doping Process and High Performance Buried Channel pMOSFET
Using Boron Diffusion Through Oxide
.....................................
.......................
Y. Toyoshima, T. Eguchi, H. Hayashida and K. Hashimoto
111
12-3
Laterally-Doped Channel
ÍLDC)
Structure for Sub-Quarter Micron MOSFETs
...........
.......
T. Matsuki, F. Asakura, S. Saitoh, H. Matsumoto, M. Fukuma and
N.
Kawamura
113
12-4
Optimized 60-V Lateral DMOS Devices for VLSI Power Applications
................
..................
O.-K. Kwon, T. Efland, W. T. Ng, S. Malhi, R. Todd and J. K. Lee
115
Author Index
............................................................... 117
xii
AUTHOR INDEX
Abt,
N....................................61
Adachi,
Τ
................................77
Ahn,
J
....................................43
Ajika,
N
..................................63
Akasaka, Y
..............................47
Ando,
M
.................................27
Anzai, A
.................................51
Aoki, H
..................................35
Aono, E
..................................25
Arai,
N
...................................79
Arima,
H
................................63
Arimoto, Y
..............................53
Arita,
Y
..................................37
Asahi, Y
..................................33
Asakura, F
.............................113
Asao, Y
.................................109
Ashida, M
...............................23
Atwood, G
..............................59
Awaya, N
................................37
Azuma,
S
................................51
B
Basavaiah, S
............................31
Beiley, M. A
............................39
Bradbury,
D
.............................41
Brassington, M. P
.....................61
Bright, A. A
...........................105
Brodsky,
S
...............................31
Bronner, G. B
.......................7, 83
Branner,
T
..............................31
Bryant,
F
.................................29
Bucelot, T
...............................31
C
Chang,
K. Y
............................91
Chang,
W.
H
...........................83
Chao,
С
..................................59
Chappell,
В
.............................31
Chappell, T
.............................31
Chen,
F. S
...............................29
Chen,
M-L
...............................89
Chiu,
K. Y
..............................41
Cho, j. S. H
............................39
Comfort,
J. H
.....................69,71
Cotte,
J. M
..............................71
Crabbé, E. F
................69, 71, 105
Cressler,
J. D
...........................69
D
Denning, D
..............................55
Doi,
T
....................................
И
E
Efland,
Τ
...............................115
Eguchi,
Τ
...............................
Ш
Endoh, A
..................................9
F
Fitch,
J
...................................55
Franch,
R
................................31
Fujii,
E
...................................25
Fukano,
T
...............................53
Fukuma,
M
............................113
Fukuroda,
A
............................53
Fukushima,
T
...........................11
Furata,
H
................................27
Furata,
T
................................25
G
Gardner,
R. M
...........................5
Gaskms,
W
..............................29
Gocho,
T
................................87
H
Ha, Y.
W
................................85
Hamada, A
..............................21
Han,
K. M
...............................85
Harame,
D. L
....................71, 105
Hartman, J............................101
Hartwig,
D
..............................67
Hashimoto,
К
....................33,
111
Hashimoto,
К...........................
95
Hata, W
..................................29
Hayashi, F
...............................27
Hayashida, H
.........................111
Hayden,
J
................................55
Helms, A
...............................101
Higaki,
N................................53
Hfflenms, S.
J
..........................89
Hirai, Y
..................................95
Hodges,
R. L
...........................29
Hoffstetter,
D. M
......................97
Hokari, Y
................................75
Homma,
N..............................57
Hsu,
С. С.-Н
...........................17
Hu, C
...........................49, 61, 91
Hu, H. K
................................41
Huang,
J
............................29,49
Hwang,
C. G
...........................85
I
Ichikawa, F
...............................9
Idei,
Y
....................................57
Iguchi,
К
.................................
H
Iijima, S
..................................65
Ikeda,
N..................................33
Ikeda,
T
..................................51
Imai, S
....................................99
Imaoka,
T
...............................45
Ino,
M
.....................................9
Inoue, Y
.................................23
Inoue, Y
.................................27
Inudo, Y
................................101
Inuishi, M
...............................47
Itano, M
.................................45
Ito,
T.....................................
53
Itoh, H
.....................................9
Iwai, H
...................................19
Iyer,
S. S
...............................103
J
Jain, V
....................................91
Jaso, M
...................................31
Johnson,
В..............................
59
Johnson,
J. B
...........................71
Joshi,
R
..................................31
К
Kakimoto,
S
............................11
Kaneko, Y
...............................79
Rang, H-K
...............................39
Kang, L. G
..............................85
Kang, Y.
T
..............................85
Kawaji, M
...............................51
Kawamoto,
Y
...........................77
Kawanrora, A
...........................11
Kawamura,
N.........................113
Kawanabe,
1
.............................45
Kawata, S
................................51
Kern,
W
................................101
Kerner,
1
.................................67
Kesan,
V. P
............................103
Kikkawa, T
..............................35
Kikuta,
К
................................35
Kim,
S. P
................................85
Kimura, Y
.................................9
Kiepner,
S
...............................31
Ko, P.
К
.................................49
Kobayashi,
T
.......................65, 77
Kodarna,
N..............................75
Koga, J
.................................109
Kohno,
Y
................................23
Kondo,
M
...............................65
Köpi, R
...................................67
Kombiit,
A
..............................89
Kroesen, G. M.
W
...................105
Kumar, A
................................59
Kume,
H
.................................77
Kwon, O.-K
............................115
Kwong,
D. L
............................43
L
Lai, S
................................59,73
Lai,
W
....................................89
Lee,
J. K
...............................115
Lii,
T
.....................................31
Lii,
Y
.....................................83
Lin,
Y. S
.................................29
Lindenberger,
W.
S
...................89
Liou,
F.
T
...............................29
Lo, G. Q
.................................43
Logan,
M
...............................101
M
MacWilliams,
K. P
..................107
Mahnkopf,
R
...........................67
Malhi,
S
................................115
Masaki,
A
.................................1
Matsukawa,
T
..........................63
Matsuki,
T
.............................113
Matsumoto,
H
........................
ИЗ
Matsuoka, K
............................95
Mazzeo, N
...............................31
McFarland, P
...........................83
McKinley,
K
...........................101
Megdanis, A. C
.............71, 83, 105
Meister,
T. F
............................67
Meul, H.
W
.............................67
Meyerson, B. S
.............69, 71, 105
Mielke, N
................................59
Miller,
R. 0
.............................29
Mis,
D. J
...............................103
Mitsuhashi, K
...........................11
Mitsuhashi, T
............................9
Miyagawa, Y
.............................9
Miyamoto,
N
...........................77
Miyashita, M
............................45
Mizuno, T
..............................109
Moazzami, R
............................61
Momose, H. S
..........................19
Moon,
J
..................................49
Mori, S
...................................79
Morimoto, T
............................19
Morita, Y
................................87
Murakami,
S
............................23
Murota, M
...............................33
N
Nagai, R
.................................15
Nagatomo, Y
.............................9
Nakamura, T
......................57, 65
Namba, M
..........................57, 65
Nayak, D. K
...........................107
Nee,
P
....................................49
Neureuther, A. R
.................93, 97
Ng, W. T
...............................115
Nguyen,
L
...............................29
Ning,
T. H
..............................17
Nishida, T
...............................77
Nishizawa, H
...........................51
Nissan-C, Y
............................61
Nomura,
N
..............................95
O
Odanaka, S
..............................99
Ohi,
M
....................................63
Ohji, Y
...................................77
Ohkawa, M
..............................27
Ohmi,
T
..................................45
Okazawa, T
.............................75
Okuyama, H
............................25
Oldham, W. G
.........................93
Onai, T
...................................57
Ong, T. C
................................73
Ohshima, Y
.............................79
P
Park, J. S
..............................107
Parke,
S
..................................49
Patton,
G. L
.......................69, 71
Petrillo, E
...............................31
Petrillo, K
...............................31
Pfau,
A. K
..............................93
Pramanik, D
............................91
R
Rajeevakumar, T. V
....................7
Ray, A
....................................31
Restie,
P. J
......................103, 105
Roh, B. H
...............................85
S
Saeki, S
..................................77
Sagarwala, P
............................29
Saitoh,
K
.................................75
Saitoh,
S
................................
ИЗ
Sakagami, E
.............................79
Sakamoto,
O
............................23
Sakurai, Y
...............................57
Sasaki, 1
..................................27
Sato, J
....................................87
Scheckler,
E. W
........................97
Schreiter,
R
..............................67
Schuster,
S
..............................31
Seki, K
...................................77
Senda,
K
.................................25
Shepherd,
W. H
........................61
Shiba, T
..................................57
Shibata, H
...............................33
Shimazaki, T
............................25
Shimizu, M
..............................47
Shimizu, T
...............................27
Shinmura, N
............................11
Shirai, H
.................................75
Spinner,
C
...............................29
Stagaman, G. S
........................29
Stanis, C. L
.......................71, 105
Stein,
K
..................................31
Stengl, R
.................................67
Stiffler, S. R
.............................71
Stork,
J. M. C
..............69, 71, 105
Subbanna, S
...........................103
Sugii, T
...................................53
Sun, J. Y.-C
.......................69, 71
Sun, S. W
...............................55
Sundaresan,
R
..........................29
T
Tabuchi, H
..............................11
Takagi, J
.................................11
Takahashi, M
............................9
Takeda, E
...........................15, 21
Tam, S
....................................59
Tamaki, Y
...............................57
Tanaka, T
...............................77
Tang,
D
..................................59
Tejwani, M. J
.........................103
Temmler, D
.............................13
Ting,
C. H
...............................39
Ting,
W
..................................43
Todd, R
................................115
Toh, K. K. H
...........................97
Toyoshima, Y
.........................111
Tsubouchi, N
...........................63
Tsuchiaki, M
............................19
Tsukamoto, K
..........................47
Tsutsumi, K
.............................23
U
Uda,
K
....................................11
Uemoto, Y
...............................25
Umeda,
K
................................15
Umimoto, H
............................99
Ushiyama, M
...........................77
V
Verdonckt-V., S
......................105
W Weyl,
R
..................................67
Yamazaki, 0
............................11
Wong,
S. S
..............................39
Yoshii, M
................................25
Wang,
K. L
............................107
Woo,
B-J
...............................73
Yoshikawa,
К
...........................79
Wang, M. S
.............................41
Woo,
J. C.
S
..........................107
Yoshimaru, M
............................9
Warnock,
J. D
.........................71
Woo,
M
..................................55
Yoshitake,
T
...........................51
Warren,
A.
С.........................
105
Wei,
С. С
................................29
γ Ζ
Wen,
D. S
...............................83
Weng,
J
..................................67
Yamaguchi, K
..........................57
Zamanian, M
...........................29
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| id | DE-604.BV005943228 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:37:18Z |
| institution | BVB |
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| language | Undetermined |
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| physical | XV, 119 S. Ill., graph. Darst. |
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| publisher | Japan Soc. of Applied Physics |
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| spelling | Symposium on VLSI Technology 11 1991 Oiso Verfasser (DE-588)5070233-6 aut Digest of technical papers 1991 Symposium on VLSI Technology, May 28 - 30, 1991/Oiso Tokyo Japan Soc. of Applied Physics 1991 XV, 119 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf VLSI (DE-588)4117388-0 gnd rswk-swf Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Oiso gnd-content Halbleitertechnologie (DE-588)4158814-9 s DE-604 Integrierte Schaltung (DE-588)4027242-4 s VLSI (DE-588)4117388-0 s 1\p DE-604 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003724650&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Digest of technical papers Halbleitertechnologie (DE-588)4158814-9 gnd VLSI (DE-588)4117388-0 gnd Integrierte Schaltung (DE-588)4027242-4 gnd |
| subject_GND | (DE-588)4158814-9 (DE-588)4117388-0 (DE-588)4027242-4 (DE-588)1071861417 |
| title | Digest of technical papers |
| title_auth | Digest of technical papers |
| title_exact_search | Digest of technical papers |
| title_full | Digest of technical papers 1991 Symposium on VLSI Technology, May 28 - 30, 1991/Oiso |
| title_fullStr | Digest of technical papers 1991 Symposium on VLSI Technology, May 28 - 30, 1991/Oiso |
| title_full_unstemmed | Digest of technical papers 1991 Symposium on VLSI Technology, May 28 - 30, 1991/Oiso |
| title_short | Digest of technical papers |
| title_sort | digest of technical papers |
| topic | Halbleitertechnologie (DE-588)4158814-9 gnd VLSI (DE-588)4117388-0 gnd Integrierte Schaltung (DE-588)4027242-4 gnd |
| topic_facet | Halbleitertechnologie VLSI Integrierte Schaltung Konferenzschrift 1991 Oiso |
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