Defects and properties of semiconductors: defect engineering
Saved in:
| Other Authors: | |
|---|---|
| Format: | Conference Proceeding Book |
| Language: | English |
| Published: |
Tokyo
KTK Scientific Publ. u.a.
1987
|
| Series: | Advances in solid state technology
3 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Literaturangaben |
| Physical Description: | VI, 261 S. Ill., graph. Darst. |
| ISBN: | 9027723524 |
Staff View
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| 245 | 1 | 0 | |a Defects and properties of semiconductors |b defect engineering |c ed. by J. Chikawa ... |
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| 490 | 0 | |a Advances in solid state technology |v 3 | |
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| 650 | 0 | 7 | |a Gitterbaufehler |0 (DE-588)4125030-8 |2 gnd |9 rswk-swf |
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Record in the Search Index
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| adam_text | DEFECTS END PROPERTIES OF SEMICONDUCTORS: DEFECT ENIIIEERIII EDITED BY
J. CHIKAWA, K. SUMINO,AND K. WADA KTK SCIENTIFIC PUBLISHERS/TOKYO - D.
REIDEL PUBLISHING COMPANY A MEMBER OF THE KLUWER ACADEMIC PUBLISHERS
GROUP DORDRECHT / BOSTON / LANCASTER / TOKYO CONTENTS PREFACE J.
CHIKAWA, K. SUMINO, AND K. WADA V PART 1: COMPOUND SEMICONDUCTORS
DISLOCATIONS IN GAAS CRYSTALS K. SUMINO 3 DISLOCATIONS IN GAAS CRYSTALS
GROWN BY AS-PRESSURE CONTROLLED CZOCHRALSKI METHOD .... K. TOMIZAWA, K.
SASSA, Y. SHIMANUKI, AND J. NISHIZAWA 25 DEEP LEVEL PHOTOLUMINESCENCE IN
GAAS M. TAJIMA 37 ANALYSIS OF NONSTOICHIOMETRY AND DOPED INPURITIES IN
GAAS BY X-RAY QUASI-FORBIDDEN REFLECTION (XFR) METHOD I. FUJIMOTO 71
GROWTH OF DISLOCATION FREE INP SINGLE CRYSTALS S. SHINOYAMA 87 INP
MISFETS TECHNOLOGY T. SUGANO 99 CHARACTERIZATION OF ALLOY SEMICONDUCTORS
T. KATODA 111 ELECTRICAL PROPERTIES OF DX CENTER IN SELECTIVELY DOPED
ALGAAS/GAAS HETEROSTRUCTURE M. TAKIKAWA AND M. OZEKI 133 PART 2: SILICON
POINT DEFECTS AND IMPURITIES IN SILICON CRYSTALS J. CHIKAWA 143 THE
BEHAVIOR OF POINT DEFECTS IN SILICON CRYSTALS S. MIZUO AND H. HIGUCHL
155 POINT DEFECTS AND STACKING FAULT GROWTH IN SILICON K. WADA AND N.
INOUE 169 THE CHARACTERISTICS OF NITROGEN IN SILICON CRYSTALS T. ABE, T.
MASUI, H. HARADA, AND J. CHIKAWA 185 OXYGEN IN SILICON N. INOUE, K.
WADA, AND J. OSAKA 197 ON THE FORMATION PROCESS OF THERMAL DONORS IN
CZOCHRALSKI-GROWN SILICON CRYSTAL M. SUEZAWA 219 INTERACTION OF
DISLOCATIONS WITH IMPURITIES IN SILICON K. SUMINO 227 AUTHOR INDEX 261
|
| any_adam_object | 1 |
| author2 | Chikawa, Junichi |
| author2_role | edt |
| author2_variant | j c jc |
| author_facet | Chikawa, Junichi |
| building | Verbundindex |
| bvnumber | BV005868347 |
| callnumber-first | Q - Science |
| callnumber-label | QC611 |
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| callnumber-subject | QC - Physics |
| classification_tum | PHY 621f |
| ctrlnum | (OCoLC)14167049 (DE-599)BVBBV005868347 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/2 |
| dewey-search | 621.3815/2 |
| dewey-sort | 3621.3815 12 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1984 Tokio gnd-content |
| genre_facet | Konferenzschrift 1984 Tokio |
| id | DE-604.BV005868347 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:36:02Z |
| institution | BVB |
| institution_GND | (DE-588)623750-2 |
| isbn | 9027723524 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-003674354 |
| oclc_num | 14167049 |
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| owner | DE-91 DE-BY-TUM DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-83 |
| physical | VI, 261 S. Ill., graph. Darst. |
| publishDate | 1987 |
| publishDateSearch | 1987 |
| publishDateSort | 1987 |
| publisher | KTK Scientific Publ. u.a. |
| record_format | marc |
| series2 | Advances in solid state technology |
| spelling | Defects and properties of semiconductors defect engineering ed. by J. Chikawa ... Tokyo KTK Scientific Publ. u.a. 1987 VI, 261 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Advances in solid state technology 3 Literaturangaben Halfgeleiders gtt Roosterfouten gtt Semiconductors Defects Congresses Halbleiter (DE-588)4022993-2 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1984 Tokio gnd-content Halbleiter (DE-588)4022993-2 s Gitterbaufehler (DE-588)4125030-8 s DE-604 Chikawa, Junichi edt Symposium on Defects and Qualities of Semiconductors 1984 Tokio Sonstige (DE-588)623750-2 oth GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003674354&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Defects and properties of semiconductors defect engineering Halfgeleiders gtt Roosterfouten gtt Semiconductors Defects Congresses Halbleiter (DE-588)4022993-2 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4125030-8 (DE-588)1071861417 |
| title | Defects and properties of semiconductors defect engineering |
| title_auth | Defects and properties of semiconductors defect engineering |
| title_exact_search | Defects and properties of semiconductors defect engineering |
| title_full | Defects and properties of semiconductors defect engineering ed. by J. Chikawa ... |
| title_fullStr | Defects and properties of semiconductors defect engineering ed. by J. Chikawa ... |
| title_full_unstemmed | Defects and properties of semiconductors defect engineering ed. by J. Chikawa ... |
| title_short | Defects and properties of semiconductors |
| title_sort | defects and properties of semiconductors defect engineering |
| title_sub | defect engineering |
| topic | Halfgeleiders gtt Roosterfouten gtt Semiconductors Defects Congresses Halbleiter (DE-588)4022993-2 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| topic_facet | Halfgeleiders Roosterfouten Semiconductors Defects Congresses Halbleiter Gitterbaufehler Konferenzschrift 1984 Tokio |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003674354&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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