Hot carriers in semiconductors: proceedings of the 7th International Conference (HCIS-7) Nara, Japan, 1 - 5 July 1992
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| Format: | Conference Proceeding Book |
|---|---|
| Language: | English |
| Published: |
Bristol u.a.
Hilger
1992
|
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Literaturangaben |
| Physical Description: | 657 S. zahlr. graph. Darst. |
| ISBN: | 0750301791 |
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| 245 | 1 | 0 | |a Hot carriers in semiconductors |b proceedings of the 7th International Conference (HCIS-7) Nara, Japan, 1 - 5 July 1992 |c Ed. by C. Hamaguchi ... |
| 264 | 1 | |a Bristol u.a. |b Hilger |c 1992 | |
| 300 | |a 657 S. |b zahlr. graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Literaturangaben | ||
| 650 | 4 | |a Hot carriers | |
| 650 | 4 | |a Semiconductors | |
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| 650 | 0 | 7 | |a Transport |0 (DE-588)4060680-6 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1991 |z Nara |2 gnd-content | |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1992 |z Nara |2 gnd-content | |
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| 689 | 1 | |5 DE-604 | |
| 700 | 1 | |a Hamaguchi, Chihiro |d 1937- |e Sonstige |0 (DE-588)122813251 |4 oth | |
| 711 | 2 | |a International Conference on Hot Carriers in Semiconductors |n 7 |d 1991 |c Nara |j Sonstige |0 (DE-588)3011362-3 |4 oth | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003662535&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
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| _version_ | 1804120039219003392 |
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| adam_text | CONTENTS
Opening address
С
Hamaguchi
SECTION
1:
PLENARY TALKS
Bl Far-infrared emission and absorption by hot carriers in superlattices (Invited paper)
S J
Allen,
G
Brozak,
E
Colas, F
DeRosa,
P
England,
J
Harbison,
M
Helm,
L Florez and
M Leadbeater
B6
Comparison between quantum and classical results in hot electron transport (Invited paper)
C Jacoboni
B12 Semiconductor quantum dot resonant tunnelling spectroscopy (Invited paper)
M
A Reed,
J N
Randall and
J H Luscombe
SECTION
2.
ELECTRON-PHONON INTERACTION
B15 Hot magneto-phonon and electro-phonon resonances in heterostructures (Invited paper)
F M
Peeters and
J T Devreese
B21 Ballistic electron luminescence spectroscopy (Invited paper)
S A
Lyon
and
C L Petersen
B26 Hot electron scattering with cold plasma in GaAs from cw hot electron luminescence spectroscopy
W
Hackenberg,
G
Fásol and
H
Kano
B29
Changeover from acoustic to optic mode phonon emission by a hot two-dimensional electron gas in the
GaAs/AlGaAs beterojunction
P
Hawker, A J Kent,
O H
Hughes and
L J Challis
B33
Gange-invariant
description of nonlinear quantum transport of weakly coupled electron phonon systems
in uniform electric fields
R
Bertoncim and A P Jauho
B36 Quantum effects on electron-pbonon interaction under high electric field in semiconductors
N
Sano
and A Yoshii
B39 Hot-electron nmgnetopboBon resonance in
η
-type
germanium in pulsed high magnetic fields up to
40
T
N
Kamata,
H
Futagawa,
К
Yamada,
N Miura
and C Hamaguchi
В42
Magnetopoonon resonance recombination of hot carriers with the emission of two
ТА
phonons in
Hgi
_
x
_
,ΟΓ,Μιι/Γε
grown by LPE
S Kuroda, T Okamoto, H J
Kwon and
К
Takita
B45
Mente
Carlo
simulation of electron transport in GaAs/Gal _xAlxAs quantum wells using different phonon
models
M P
Chamberlain,
D
Hoare,
R
W
Kelsall and
R A
Abram
B49 Traasitkm from LOphonon to SO-phonon scattering in
mesoscałe
structures
К
W
Kim,
M A Littlejohn, M A
Stroscio
and G J lafrate
Contents
SECTION
3:
CONFINED PHONON MODES
B52 Coupling of polar optical phonons to electrons in superlattices and isolated quantum wells (Invited paper)
M
Babiker
B60 Confined phonon modes and hot electron energy relaxation in semiconductor
microstructures
(Invited
paper)
S
Das
Sarma,
V
В
Campos,
M
A Stroscio
and
К
W Kim
B67
Electron-phonon interactions in two-dimensional systems: a microscopic approach (Invited paper)
E
Molinari,
С
Bungaro,
M
Gulia,
Ρ
Lugli and
Η
Rücker
Β73
Electron-phonon
interaction in semiconductor
superlattices
Τ
Tsuchiya and
Τ
Ando
B77 Subpicosecond generation and decay of coherent phonons in
ПІ
-V
compounds
W
Kütt,
G
С
Cho,
Τ
Pfeiffer
and H
Kurz
B80
The electron-optical phonon interaction in semiconductor
microstructures
H
Gerecke
and
F
Bechstedt
B83
Effect of electron-interface phonon interaction on resonant tunnelling in double-barrier heterostructures
N
Mori,
К
Taniguchi and
С
Hamaguchi
B88 Optical phonon modes in quantum wires
Bang-fen Zhu
B91
Fuchs-
Kliewer interface polaritons and their interactions with electrons in Ga As/
Al
As double
heterostructures
О
Al-Dossary,
M
Babiker
and
N
С
Constantinou
B94 Optical mode mixing in an
isotropìe
elastic layer
В К
Ridley and
N C
Constantinou
B98 Intersubband relaxation of photoexcited carriers in asymmetric coupled quantum wells
H
Rücker,
Ρ
Lugli,
S M Goodnick
and J E
Lary
SECTION
4:
OPTICAL STUDY OF ULTRAFAST PROCESSES
B102 Inter- and intra-subband relaxation of hot carriers in quantum wells probed by time-resolved Raman
spectroscopy (Invited paper)
M C
Tatham and
J F
Ryan
B109 Monte Carlo studies of intersubband relaxation in semiconductor
microstructures
(Invited paper)
S M
Goodnick and
J E
Lary
BI
16
Interaction of electrons with interface phonons in GaAs/AlAs and GaAs/AIGaAs heterostructures
P
Lugli,
P
Bordone, E
Molinari,
H
Rücker,
A M
de Paula,
А С
Maciel,
J F
Ryan and
M
Shayegan
BI20 Subpicosecond
real-space
charge
transfer in GaAs/AIAs type II superlattices
A M de
Paula,
А С
Maciel,
G
Weber,
J
F
Ryan,
P Dawson and C T
Foxon
B124
Femtosecond spectroscopy of hot carrier relaxation in bulk semiconductors (Invited paper)
H
Kurz
ВІЗО
Transient grating experiments for the study of electron-hole separation in an electric field
J
Feldmann,
P
Grossmann,
W
Stolz, E
Göbel
and
К
Ploog
BI33 Time-resolved observation of ballistic acceleration of electrons in GaAs quantum wells
W
Sha,
T B
Norris, W J
Schaff and
K E
Meyer
ВІЗ?
Short-range deformation-potential interaction and its application to uitrafast processes in semiconductors
(Invited paper)
S
Zollner,
S
Gopalan and
M
Cardona
BI44 Femtosecond luminescence spectroscopy of carrier thermalization in GaAs and InP
T
Elsaesser,
J
Shah, L
Rota and
P
Lugli
Contents
B148 Quantitative
evaluation of the energy-loss rate of hot electrons to cool electron-hole plasmas including
dynamic screening and
intervalence
band processes
J F
Young,
P J
Kelly and
N L
Henry
B151 Intraband inversion in semiconductors with
ultrashort
carrier lifetimes
К
F
Lamprecht,
S Juen,
L Palmetshofer and R A
Höpfel
B154
The role of the finite collision duration in femtosecond laser studies of semiconductors
H Hida, S Yamaguchi, A M
Kriman and
D K
Ferry
B157 Picosecond electron and hole transport in metal-semiconductor metal photodetectors
J
Kühl,
M
Klingenstein, J Rosenzweig,
C Moglestue
and A Axmann
B160 Non-equilibrium distribution of hot carriers in a CdSe thin film
F
Sasaki,
T
Mishina,
Y
Masumoto,
В
Fluegel,
К
Meissner and
N
Peyghambarian
В
164
Femtosecond gain dynamics in thin GaAs films
P M
Fauchet,
T Gong, P J Kelly and J F
Young
B167
Phonon coupling
in
GaAs/Al^Gaj
_
xAs
observed by picosecond Raman scattering
A Bouchalkha,
D
S
Kim,
J
M Jacob,
J
F
Zhou,
J J Song and J F
Klem
Bl
70
Exciton
trapping
in strained GaAsP quantum wells
Y
Takiguchi,
К
Shum,
W
В
Wang,
R R Alfano, E S
Köteles,
D C Bertolet, J K Hsu and K M
Lau
B173
Investigation
of the L6-X6 intervalley scattering in AlxGa, _^As by measuring hot carrier dynamics in a
Κ φ
0
satellite valley
W
В
Wang,
K Shum, R R Alfano, D Szmyd and A J Nozik
BI
76
Doping
dependence of the ultrafast thermalization and relaxation of highly
photœxcited carriers
in bulk
polar
semiconductors
U Hohenester, P Supancic, P Kocevar, X Q
Zhou,
U
Lemmer,
G C Cho,
W
Kütt
and H
Kurz
B180
Cooling by plasmon emission of high energy electrons in semiconductors
L
Rota and
P
Lugli
B183 Separation of bound and free carrier contributions to the refractive index change induced in
11
VI
semiconductors by femtosecond pulses
E
С
Fox,
E J
Canto-Said and
H M
van Driel
B187 Subpicosecond study of band-edge absorption in AI0 2SGa0 75As
J
Nunnenkamp,
J H
Collet,
J
Klebniczki,
J
Kühl
and
K Ploog
B191 Picosecond time-resolved Raman studies of electron-optical phonon interactions in ultrathin GaAs-AlAs
multiple quantum well structures
K T
Tsen
B195 Hot carrier dynamics in GaAs epilayer structures grown on Si
К
Shum,
Y
Takiguchi,
J M
Mohaidat,
R R Alfano, K
Adomi
and H Morkoc
B199
Dynamic simulation of a photoconductive switching experiment
K M
Connolly,
S M
El-Ghazaly,
R O
Grondin,
R P Joshi and D K
Ferry
SECTION
5:
HETEROSTRUCTURES/LOW DIMENSIONAL
TRANSPORT
B202 Hot carrier dynamics in mesoscopic structures (Invited paper)
J P
Leburton and
D
Jovanovic
B210 Electro« transport in quantum wires and its device applications (Invited paper)
J
Sone
B215 Thermoelectric properties of quantum point contacts (Invited paper)
H
van
Houten,
L
W
Molenkamp,
С
W
J
Beenakker
and C T
Foxon
B223
Electron
waves through quantum point contacts (Invited paper)
M
Okada,
M
Saito,
M
Takatsu,
P
E
Schmidt,
K Kosemura
and
N
Yokoyama
B228 Electron-electron scattering probed by
a collimateti
electron beam
L
W
Molenkamp,
M J P
Brugmans,
H
van Houten and
C T Foxon
Contents
B231 Lattice
heating of free-standing ultra-fine GaAs wires by hot electrons
A Potts,
M J
Kelly,
D
G
Hasko,
J R
A Cleaver,
H
Ahmed,
D
A Ritchie,
J
E
F
Frost
and G A
С
Jones
B235
Enhanced
exciten
mobilities in GaAs/AlGaAs and InGaAs/InP quantum wells
H
Hilłmer,
A Forchel,
С
W
Tu
and
R
Sauer
B240 Diffusion
of carriers in a semiconductor quantum well
J P
Wolfe,
H
W
Yoon,
D R
Wake
and H Morkoc
B243
Exchange effects in hot plasma in semiconductors (Invited paper)
A M Kriman, R P
Joshi,
M J
Kann and
D K
Ferry
B248 Hot electron scattering mechanisms in AlGaAs/GaAs/AlGaAs quantum wells
К
Makiyama,
К
Kasai,
T
Ohori and
J
Romeno
B251 Excitation hot-electron spectroscopy of quantum well structures
К К
Choi,
M
Dutta,
P G
Newman and
G J
Iafrate
B253 Effect of a hot two-dimensional electron gas on optical properties of modulation-doped GaAs/AlGaAs
heterostructures
W
M
Chen,
В
Monemar,
E
Sörman,
P O Holtz, M
Sundaram, J
L
Merz
and A C
Gossard
B256 Wave number distribution of hot holes under the cyclotron resonance condition
—
striking enhancement of
harmonics in optically detected cyclotron resonance
T
Tomaru,
T
Ohyama and
E
Otsuka
B2S9 Hot electron transient transport in a superlattice
miniband
X L Lei, N J M
Horing and
H L
Cui
B262 Electronic
distribution
function
under
high field transport in modulation-doped GaAs/GaAIAs multi-
quantum wells
С
Guillemot and
F Clérot
B267 Experimental and theoretical investigation of the drift velocity and velocity distribution function in
GaAs/AlGaAs heterostructures
С
Wirner,
M
Witzany,
С
Kiener,
G
Zandler,
G
Böhm,
E
Górnik,
P
Vogi and
G
Weimann
B271
Optical analysis of hot carrier distribution and transport properties in InP/AHnAs type II heterostructures
R
Sakamoto,
T
Kohno,
T
Kamiyoshi,
M Inoue, S
Nakajima and
H Hayashi
B274 Hot electron transport in GaAs quantum wells: effect of non-drifting hot phonons and interface roughness
R
Gupta,
N
Balkan and
В К
Ridley
B279 Nonlinear conductance of quantum point contacts in a magnetic field
A J
M
Neves,
P
С
Main,
C J
G M Langerak,
P
H
Beton,
L
Eaves,
M
Henini,
O H
Hughes,
S
P
Beaumont
and C D W
Wilkinson
B283
Nonlinear
miniband
conduction in crossed electric and magnetic fields
J
F
Palmier,
A
Sibille
and
G
Etemadi, A Celeste and
J C
Portal
B287 Temporal evolution of the electron
hok
plasma recombination in quantum wires
R
Cingolani,
H
Lage,
H
Kalt,
L
Tapfer,
D
Heitmann and
К
Ploog
В289
Direct estimation of quantized thermopower in a single point contact
S Yamada
and
M Yamamoto
B292 Influence of electron-electron interactions on the transfer of single electrons between quantum dots
A H Guerrero
B295 One-dimensional electron transport in
InAs/iA^Gaj
_^)Sb SQWs
К
Yon,
H
Taniguchi,
К
Kiyomi,
R
Sakamoto and
M
Inoue
B299 Electron high-field transport in multi-subband quantum wire structures
R
Mickevicius, V V
Mitin,
К
W Kim and
M A
Stroscio
SECTION
6;
HOT CARRIER SCATTERING
AND RELAXATION
B302 Hot carrier relaxation and recombination in amorphous semiconductors
A Mourchid,
D
Hulín,
R
Vanderhaghen and
P M
Fauchet
Contents
B305
Finite
temperature inelastic scattering in a doped polar semiconductor
BYHu and
S
Das
Sarma
B3O8 Transient regime of hot carriers in InP
J
С
Vaissiere,
M
Elkssimi and
J P
Nougier
B312 Monte Carlo simulations of field and carrier density dependent hole transport in an InGaAs/GaAs
strained layer quantum well
R
W
Kelsall
and
R A
Abram
B316 Non-equilibrium Green s function approach to dielectric response: de-screening of the Coulomb interaction
at high electric fields
K-S Yi,
A M
Kriman and
D K
Ferry
B319 Effects of multi-ion impurity scattering on electron velocities in bulk GaAs
R P
Joshi and
D K
Ferry
B322 Electron-electron scattering in hot electrons
S
Dedulewicz,
Z
Kancleris, A Matulis and Yu Pozhela
B324 Simulation of CW laser excitation of GaAs with the energy diffusion equation
S
E Guneer
and
D K
Ferry
В328
On the validity of the relaxation time approximation for silicon in the region of irreversible
thermodynamics
R
Thoma,
K P
Westerholz,
H J
Peifer and
W
L
Engl
B331 Electron gas cooling studied by measurements of noise temperature
S Ašmontas, J
Liberis,
L
Subacius and
G Valušis
B334 Diffusion and recombination of
photocarriers
in Ge and GaAs
H
Nakata,
H
Kobori, A Uddin,
T
Ohyama and
E
Otsuka
B337 Investigation of hot carrier relaxation in quantum well and bulk GaAs at high carrier densities
W
S
Pelouch,
R J
Ellingson,
P
E
Powers,
C J
Tang,
D M Szymyd and A J Nozik
B340 Carrier-carrier interaction effects on transient valley
repopulation
and velocity in silicon
M A Osman,
N
Nintunze and
M
Imam
B343 Energy relaxation in GaAs/AlGaAs two-dimensional structures
A Straw, A J Vickers and
J S
Roberts
SECTION
7: TRÄNSPORT
B346 Hot carrier transport in p-GaAs (Invited paper)
T
Furuta,
H
Taniyama,
M
Tomizawa and A Yoshii
B351 Fast computation of transport coefficients of hot carriers
J P
Nougier,
S
Tabikh and
J C
Vaissiere
B354 Impact of /t-space transfer and band non-parabolicity on electron transport in a GaAs ballistic diode
D L
Woolard,
H
Tian,
M A Littlejohn,
R J
Trew
and K
W Kim
B357 Monte Carlo simulation
of
bot
electron
transport in Si
using a unified pseudopotential
description
of the
crystal
P D Yoder, J M Higman, J Bude and K Hess
B360
Temperature description of transport in single- and multiple-barrier structures
H L
Grubin,
T R
Govindan,
В І
Morrison,
D K
Ferry and
M A
Stroscio
B364 Coupled
Langevin
equations for hot-carrier transport in semiconductors
L
Reggiani,
T
Kuhn and
L
Varani
B367
Influence of non-parabolicity on hot electrons in
η
-type
gallium arsenide
Chhi-Chong Wu and Chau-Jy Lin
B369 Effects of disorder on electronic conduction properties at subsidiary energy minima in ternary inGa As
alloys
N
Shigekawa and
E
Yamaguchi
Contents
B372
Hot electron transport in a pulse-doped GaAs structure
S
Nakajima,
N
Kuwata,
N
Nishiyama,
N
Shiga and
H Hayashi
B375 Thermodynamic treatment of hot-carrier transport
YOhno
B379 Carrier transport analysis with Monte Carlo simulation including new simplified band structure
H
Mizuno,
К
Taniguchi and
С
Hamaguchi
B383 Enhancement of drift-velocity overshoot in silicon due to intracollisional field effect
F
Rossi and
С
Jacoboni
B386
Dynamic NDM
at transit-time resonance in n-InP
Yu
К
Pozhela,
E
V Starikov and
Ρ Ν
Shiktorov
B390 A comparison of transient velocity overshoot in Si and GaAs structures
D T
Hughes,
R
A Abram,
R W
Kelsall
and A J
Holden
SECTION
8:
TUNNELLING
B394 Coherent and incoherent tunnelling in asymmetric double quantum wells (Invited paper)
К
Leo,
J
Singh,
E O Göbel,
J P
Gordon
and S
Schmitt-Rink
B401 Electron transport in double
barrier resonant tunnelling
structures
studied by optical spectroscopy (Invited
paper)
M S Skotnick, P E
Simmonds,
D G
Hayes,
C R
H
White, L Eaves, A W Higgs,
M Henini,
О
H Hughes, G
W
Smith
and C R
Whitehouse
B409 Photoluminescence spectroscopy
of hot
carriers
in superlattices injected by resonant tunnelling
H T
Grahn,
W W
Rühle,
К
von Klitzing
and K
Ploog
B413
High-magnetic-field studies of hole energy dispersion, cubic
anisotrop)
and space charge build-up in the
quantum well of p-type resonant tunnelling devices
R K
Hayden,
T Takamasu, D K
Maude,
E C
Valadares,
L
Eaves,
U
Ekenberg,
N Miura,
M Henini,
J
С
Portal,
G
Hill and
M A
Pate
B418
Tunnelling of electrons and holes in asymmetric double quantum well structures
J
Kühl,
R
Strobel,
R
Eccleston and
К
Köhler
В421
Resonances in tunnelling between quantum wells
A P
Heberte,
W W
Rühle,
M G
W
Alexander
and K
Köhler
B424 Phonon-assisted
tunnelling
in
a
double
quantum
weil
structure
К
Kuroyąnagi,
N
Sawaki,
T
Takatsuka, I Akasaki,
T
Kawakami and
H
Goto
B427 Picosecond spectroscopy of tunnelling and energy relaxation in double quantum well wires
A Ishida,
E
Okuno,
H
Goto,
N
Sawaki, I Akasaki,
T
Suzuki,
H Itoh
and
К Нага
B430 Effects of reservoirs on quantum transport phenomena in mesoscopic systems
S
Ho and
К
Yamaguchi
B434 Density-matrix and quantum-moment studies of single- and multiple-barrier tunnelling structures
H L
Grubin,
T R
Govindan,
B J
Morrison and
M A
Stroscio
B439 Effect of inelastic scattering on resonant tunnelling in double-barrier heterostructures
S M
Booker,
F
W
Sheard and
G A Toornbs
B442 Asymmetry in the i(V) characteristics of a gated resonant tunnelling diode
M
W
Dellow,
P H
Beton,
P
С
Main,
T J
Foster,
L
Eaves,
A F
Jezierski, W
Kool,
M
Henini,
S
P
Beaumont and
C D W
Wilkinson
B44é
Investigation of
LO
phonon emission by hot holes and the effective mass for hole tunnelling in
GaAs/(AlGa)As single barrier structures
M
Aiikacem,
D
К
Maude,
M
Henini,
L
Eaves,
G
Hill and
M A Pate
Β45Θ
Resonant tunnelling and escape time of hot carriers in GaAs-AlGaAs heterostructures
L
Meza-Montes,
M
A Rodríguez
and
J L
Carrillo
Contents
B453
Effect of
finai
states on electron tunnelling in coupled quantum
weil
structures
N
Shimizu,
Τ
Furuta,
Τ
Waho and
Τ
Mizutani
B456 Resonant magnetotunnelling of electrons and holes in a p-i-n diode device incorporating a double barrier
structure
Ρ Μ
Martin,
R K
Hayden,
C R H
White,
M Henini, L
Eaves,
D K
Maude,
J C
Portal,
G
Hill and
M A Pate
B460
Theory of resonant tunnelling between 2D electron systems
F
W
Sheard and
G A
Toombs
B462 Confinement and Coulomb interactions in Schottky-gated, laterally confined double-barrier quantum well
heterostructures
P
Guéret,
N
Blanc,
R
Germann
and H
Rothuizen
B465
Optical control of GaAsSb/InGaAs staggered resonant tunnelling barrier structures grown by MBE
T
Inata,
Y
Nakata and
S
Muto
SECTION
9:
FLUCTUATION/CHAOS/IMPACT IONIZATION
B468
Hot electron
noise in
III V heterojunction field effect
transistor
(Invited paper)
J
Zimmermann
and
А Сарру
B474 Chaotic carrier transport induced by impact ionization in semiconductors (Invited paper)
К
Aoki
B480 Dynamic
Hali
effect of hot electrons as a novel mechanism for current oscillations, chaos and
intermittency
E
Scholl,
G H
upper and A Rein
B483 Optical detection of chaotic oscillations owing to impact ionization of donors by hot carriers in GalnAs
M
Godlewski,
К
Frone,
M
Gajewska, W
M
Chen
and
В
Monemar
B486 An oscillation mechanism of semiconductor breakdown due to magnetic field induced transverse motion of
current filaments
A
Kittel,
M
Hirsch,
R
Richter,
W Clauss, U Rau,
J
Peinke,
J
Parisi
and R P Huebener
B488
Chaotic conductivity oscillation
in n-
and p-type
Si
К
Yamada,
N
Kamata,
H
Futagawa,
N
Miura and
С
Hamaguchi
В491
Relationship between the chaotic oscillation and side-gating effect S-type negative differential resistance in
GaAs MESFETs
H
Yano,
N
Goto and
Y Ohno
B495 Non-equilibrium noise in mesoscopic systems: effects of transit times
T
Kuhn,
L
Reggiani and
L
Varani
B498
Bifurcation of resonant tunnelling current due to the accumulated electrons in a well
Y
Abe
B502 A quantum description of impact ionization in semiconductors
W
Quade,
F
Rossi and
С
Jacoboni
Β5Θ6
Impact ionization in semiconductors: beyond the Golden Rule
J Bude, K
Hess and
G J lafrate
B509
The tailoring of impact ionization phenomenon using pseudomorphic structures
—
applications to
InGaAIAs on GaAs and InP substrates
J
Singh
B512 Hole impact ionization rates in InP and Ino^Gao^As
A R Beattie, R
A Abram
and
P Scharoch
B517 Impact ionization of free and bound
excitons
in AlGaAs/GaAs quantum wells
H
Weman,
G M
Treacy,
H P
Hjalmarson, K K
Law,
J P
Bergman,
J L
Merz
and A C Gossard
Contents
SECTION
10:
NOVEL DEVICES
B520 Symmetry of the real-space transfer and collector-controlled states in charge injection transistors (Invited
paper)
S
Luryi and
M R
Pinto
B527 Hot electron injection in InAlGaAs/InGaAs ballistic collection transistors
H
Nakajima and
T
Ishibashi
B530 Novel nonlinear transport phenomena in a triangular quantum well
A Kastalsky,
F M
Peeters,
W
К
Chan,
L T Florez and J P
Harbison
B533 Monte
Carlo simulation of InGaAs/AlGaAs/GaAs real-space
transfer
transistors
M
В
Patii,
U
Ravaioli,
К
Hess and
M Hueschen
B536
The physics of a two-dimensional electron gas base vertical hot electron transistor
P
Matthews,
M J
Kelly,
D
G
Hasko,
J
E
F
Frost,
D
A Ritchie,
G
А С
Jones,
M
Pepper and
H
Ahmed
B540 Monte-Carlo study of the non-stationary transport in Si-SiGe HJBTs
S
Galdin,
P
Hesto,
P
Dollfus and J-F
Póne
B543 Hot-carrier-induced photon emission in
submicron
GaAs devices
E
Zanoni,
С
Tedesco,
M
Manfredi,
M Saraniti and P
Lugli
B546
Ballistic phenomena in GaAs mesfets; modelling with quantum moment equations
J R
Zhou and
D K
Ferry
B549 Hot-electron injection EL (HEI-EL) devices
Guixi Zhou,
Y Nakanishi
and
Y Hatanaka
BS52 Monte Carlo analysis of fluctuations in
submicron n+nn+
structures
L
Varani,
T
Kuhn,
L
Reggiani,
Y Perlés,
J
С
Vaissière
and J P
Nougier
SECTION
11:
HOT CARRIER EFFECTS IN MOSFETs
B555 Simulating hot-carrier effects on circuit performance (Invited paper)
CHu
B559 Cellular automata simulation of stationary and transient high-field transport in
submicron Si
and GaAs
devices (Invited paper)
K Kometer, G
Zandler and
P
Vogi
B564 Hot carrier light emission from GaAs
hemt
devices
R
Ostermeir,
F
Koch,
H
Brugger,
P
Narożny
and
H Dämbkes
B567 Light emission from
bot
carriers
io Si
mosfets
К
Hublitz and
S A
Lyon
B570 Hot electron effects in 2DEGS in Si of low
Năcp
3
Cooper,
F F
Ouau
and
L J Challis
B573 Electron mobility in Si inversion layers
К
Masaki,
К
Taniguchi and
С
Hamaguchi
B576 Photos spectrum analysis of hot carrier degradation in NMOSFETs
Y
Uraoka,
N
Tsutsu and
S Akiyama
B581 PMOSFET hot-carrier damage: oxide charge and interface states
R
Woltjer, A Hamada and
E Takeda
B585 Effect of sidewaU spacer thickness on hot-carrier degradation of pmos transistors
S T
Ahn,
S Hayashida,
К
Iguchi,
К
Uda
and J
Takagi
B599
Effective temperature of hot electrons: why it approaches the lattice temperature
A Lacaita
В5Ш
A scaling consideration on mechanical stress-induced hot-carrier effects
A Hamada,
T
Furusawa,
N
Saito
and
E
Takeda
Contents
B597
A multi-band model for hole transport in silicon at high energies
A Abramo,
F
Venturi, E Sangiorgi,
С
Fiegna,
В
Ricco,
R
Brunetti,
W
Quade
and C Jacoboni
B60I
Observation
of anisotropic impact ionization in Si mosfets
S
Takagi and A Toriumi
SECTION
12:
POPULATION INVERSION/FAR INFRARED EMISSION
B604 Tunable cyclotron resonance laser in p-Ge (Invited paper)
К
Unterrainer
Bél
0
Quantum
states interaction in hot carriers accumulation and stimulated emission process in p-Ge (Invited
paper)
S A
Stoklitskiy
B618 Quantum-mechanical calculations of population inversion and amplification of far-lR laser oscillation in
p-Ge
S K
uroda
and
S Komiyama
B622 Stimulated emission using the transitions of shallow acceptor states in germanium
S
V Demihovsky, A V Murav ev,
S G
Pavlov and V
N
Shastin
B626
dc
field response of carriers bunched in momentum space under crossed intense microwave and magnetic
fields
N
Ishida and
T
Kurosawa
B629 Proposed optical-phonon-mediated population inversion and stimulated FIR emission in superlattices
A A Andronov
B633 Nonlinear far-infrared response of passive and active hole systems in p-Ge
F
Keilmann
and
R
Till
ВбЗб
Population inversion in the set of light hole and Landau levels in germanium
Yu
L Ivanov,
Yu Vasilyev and
V A
Reingold
B638 Picosecond infrared studies of hot holes in
p-type Ge
M
Woerner,
R
Schuster,
T
Elsaesser
and
W
Kaiser
BÓ41
Anisotropy and
uniaxial
effects in submillimetre stimulated emission spectra of hot holes in germanium
in strong
E LH
fields
Yu A Mityagin,
V N Murzin, O N
Stepanov and
S A
Stoklitsky
B645 p-type Ge far-infrared laser oscillation in
Voigt
configuration
I Hosako and
S
Komiyama
B649
leverted
distributions of hot boles in uniaxially stressed germanium
V I Gavriienko,
N
G
Kaługin,
Z F Krasiľnik, V V Nikonorov, A V Galyagin and P N Tsereteli
BÓ52
Stimulated infrared emission from hot electrons of InSb excited by
J x H
force at the quantum limit
T
Morimoto and
M
Chiba
CLOSING ADDRESS
Present and future trends in
bot electron
physics
E
Górnik
|
| any_adam_object | 1 |
| author_GND | (DE-588)122813251 |
| building | Verbundindex |
| bvnumber | BV005848682 |
| callnumber-first | Q - Science |
| callnumber-label | QC611 |
| callnumber-raw | QC611.6.H67 |
| callnumber-search | QC611.6.H67 |
| callnumber-sort | QC 3611.6 H67 |
| callnumber-subject | QC - Physics |
| classification_rvk | UP 1100 UP 3600 |
| classification_tum | PHY 685f PHY 672f |
| ctrlnum | (OCoLC)223085831 (DE-599)BVBBV005848682 |
| dewey-full | 621.3815 537.6/226 |
| dewey-hundreds | 600 - Technology (Applied sciences) 500 - Natural sciences and mathematics |
| dewey-ones | 621 - Applied physics 537 - Electricity and electronics |
| dewey-raw | 621.3815 537.6/226 |
| dewey-search | 621.3815 537.6/226 |
| dewey-sort | 3621.3815 |
| dewey-tens | 620 - Engineering and allied operations 530 - Physics |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift 1991 Nara gnd-content (DE-588)1071861417 Konferenzschrift 1992 Nara gnd-content |
| genre_facet | Konferenzschrift 1991 Nara Konferenzschrift 1992 Nara |
| id | DE-604.BV005848682 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:35:45Z |
| institution | BVB |
| institution_GND | (DE-588)3011362-3 |
| isbn | 0750301791 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-003662535 |
| oclc_num | 223085831 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-11 |
| owner_facet | DE-91 DE-BY-TUM DE-11 |
| physical | 657 S. zahlr. graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| publisher | Hilger |
| record_format | marc |
| spelling | Hot carriers in semiconductors proceedings of the 7th International Conference (HCIS-7) Nara, Japan, 1 - 5 July 1992 Ed. by C. Hamaguchi ... Bristol u.a. Hilger 1992 657 S. zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Hot carriers Semiconductors Heißes Elektron (DE-588)4159455-1 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Transport (DE-588)4060680-6 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Nara gnd-content (DE-588)1071861417 Konferenzschrift 1992 Nara gnd-content Heißes Elektron (DE-588)4159455-1 s Transport (DE-588)4060680-6 s Halbleiter (DE-588)4022993-2 s DE-604 Hamaguchi, Chihiro 1937- Sonstige (DE-588)122813251 oth International Conference on Hot Carriers in Semiconductors 7 1991 Nara Sonstige (DE-588)3011362-3 oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003662535&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Hot carriers in semiconductors proceedings of the 7th International Conference (HCIS-7) Nara, Japan, 1 - 5 July 1992 Hot carriers Semiconductors Heißes Elektron (DE-588)4159455-1 gnd Halbleiter (DE-588)4022993-2 gnd Transport (DE-588)4060680-6 gnd |
| subject_GND | (DE-588)4159455-1 (DE-588)4022993-2 (DE-588)4060680-6 (DE-588)1071861417 |
| title | Hot carriers in semiconductors proceedings of the 7th International Conference (HCIS-7) Nara, Japan, 1 - 5 July 1992 |
| title_auth | Hot carriers in semiconductors proceedings of the 7th International Conference (HCIS-7) Nara, Japan, 1 - 5 July 1992 |
| title_exact_search | Hot carriers in semiconductors proceedings of the 7th International Conference (HCIS-7) Nara, Japan, 1 - 5 July 1992 |
| title_full | Hot carriers in semiconductors proceedings of the 7th International Conference (HCIS-7) Nara, Japan, 1 - 5 July 1992 Ed. by C. Hamaguchi ... |
| title_fullStr | Hot carriers in semiconductors proceedings of the 7th International Conference (HCIS-7) Nara, Japan, 1 - 5 July 1992 Ed. by C. Hamaguchi ... |
| title_full_unstemmed | Hot carriers in semiconductors proceedings of the 7th International Conference (HCIS-7) Nara, Japan, 1 - 5 July 1992 Ed. by C. Hamaguchi ... |
| title_short | Hot carriers in semiconductors |
| title_sort | hot carriers in semiconductors proceedings of the 7th international conference hcis 7 nara japan 1 5 july 1992 |
| title_sub | proceedings of the 7th International Conference (HCIS-7) Nara, Japan, 1 - 5 July 1992 |
| topic | Hot carriers Semiconductors Heißes Elektron (DE-588)4159455-1 gnd Halbleiter (DE-588)4022993-2 gnd Transport (DE-588)4060680-6 gnd |
| topic_facet | Hot carriers Semiconductors Heißes Elektron Halbleiter Transport Konferenzschrift 1991 Nara Konferenzschrift 1992 Nara |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003662535&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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