Defect recognition in semiconductors before and after processing: proceedings of the fourth International Conference ; Wilmslow, UK, 18 - 22 March 1991
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| Format: | Book |
|---|---|
| Language: | English |
| Published: |
Bristol u.a.
Hilger
1992
|
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Aus: Semiconductor science and technology ; 7. 1992 |
| Physical Description: | 310 S. zahlr. Ill. u. graph. Darst. |
| ISBN: | 0750301880 |
Staff View
MARC
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| 245 | 1 | 0 | |a Defect recognition in semiconductors before and after processing |b proceedings of the fourth International Conference ; Wilmslow, UK, 18 - 22 March 1991 |c Ed. by M. R. Brozel ... |
| 264 | 1 | |a Bristol u.a. |b Hilger |c 1992 | |
| 300 | |a 310 S. |b zahlr. Ill. u. graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Aus: Semiconductor science and technology ; 7. 1992 | ||
| 650 | 4 | |a Gallium arsenide semiconductors |v Congresses | |
| 650 | 4 | |a Photoluminescence |v Congresses | |
| 650 | 4 | |a Semiconductors |x Defects |v Congresses | |
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| 700 | 1 | |a Brozel, M. R. |e Sonstige |4 oth | |
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Record in the Search Index
| _version_ | 1804119808381288448 |
|---|---|
| adam_text | Contents
FOREWORD
PHOTOLUMINESCENCE
I
Al
Scanned photoluminescence of semiconductors
H J
Hovel
AIO
Non-destructive, whole wafer assessment of optoelectronic epitaxial materials
C J
Miner
A16 Cryogenic, whole wafer imaging of semi-insulating GaAs
T
W
Steiner
and
M L
W Thewałt
A22
Photoluminescence and minority carrier diffusion length imaging in silicon and GaAs
P
Edelman,
W
Henley and
J
Lagowski
A27 Low-temperature photoluminescence topography of MOCVD-grown InGaP, AlGaAs and
AlGaAs/GaAs single quantum wells
D J
As,
S
Korf,
Z
M Wang,
J
Wmdscheif,
К
H
Bachem
and
W
Jantz
A32 Scanning photoluminescence techniques: application to defect recovery of
ion-implanted InP
H
L Haridon,
P N
Favennec and
M
Salvi
АЗб
Recognition of non-radiative recombination centres in semi-insulating GaAs
S
Tüzemen,
L
Breivik and
M
E Broze!
A41
Radiative electronic transitions associated with oxygen-induced stacking faults in silicon
3
H
Evans,
J
Kamewski,
M
Kaniewska and
J S
Bimmer
A45 Recognition and mapping of microdefects by photoetching, laser-scattering tomography
and photoluminescence in si undoped GaAs after different ingot-annealing treatments
J L
Weyher,
P
Gall,
Le
Si Dang,
J P
Fiłlard,
J
Bonnafé,
H
Rufer,
M
Barnngartner
and
К
Löhnert
РНОТОШМШЕЅСЕИСЕ
II
A53
Scanned
photoluminescence
with high spatial resolution in semi-insulating GaAs and
InP: aspects of surface passivation and photodfegradation
G E
Carver
A59 Spatial variations of photoluminescence line broadening around oval defects in
GaAs/AlGaAs multiple quantum wells
JEM
Haverkort,
M P
Schuwer,
M
E
Leys
and J H
Wolter
A83
Higb-spatiał-resolution
photoluminescence
studies on misfit dislocations in
lattice-mismatched III-V heterostructures
P J
van
der Wel,
J
te Hijenłmis,
E E H
van Eck äad
L J
Giling
A69
Spatially resolved composition measurements of ternary epitaxial layers
C J L
Moore
and J
Hennessy
A73
Inspection of
n-typeïnP
crystals by scanning photoluminescence measurements
S
К
Krawczyk,
F Krafft,
С
Klingelhöfer,
M Garrigues
and K
Schöbe
MAGIC
MIRRORS (MAKYOH) AND LED MEASUREMENTS
A80 Characterisation of mirror-polished Si wafers and advanced Si substrate structures using
the magic mirror method
S
Hahn,
К
Kugimiya,
K Vojtechovsky, M Sifalda,
M Yamashita,
P R
Blaustem
and
К
Takahashi
A86 Investigation of rapid-thermal-processing-induced defects in ion-implanted Czochralski
silicon by the magic mirror method
S
Hahn,
К
Kugimiya,
С В
Yarling, H
Suga,
W
L Smith, P R
Blaustem
and
К
Takahashi
A91 Makyoh topography: comparison with x-ray topography
К
Kugimiya
A95 Characterisation of deformations and texture defects on polished wafers of III-V
compound crystals by the magic mirror method
C
-С
Shiue,
K
-Н
Lie and
P R
Blaustein
A98 Defects in the active layer p-Alo.35 Gao.ee As of high-brightness red-light-emitting diodes
К
Tadatomo,
H
Kinoshita and
H
Okushi
A104 Recovery of damaged GaAs diodes by minority carrier injection
К
Yamada,
H
Nakanishi and
К
Wada
ETCHING, OPTICAL MICROSCOPY AND
ТЕМ
STUDIES
A110 The scanning infrared microscope (sirm) and its application to bulk GaAs
and Si: a review
G R
Booker,
Z
Laczik and
P
Kidd
A122 Convergent beam electron diffiraction study of extended defects in gallium chalcogenide
single crystals grown from the melt
C De Blasi, D Manao and
A Rizzo
A127 Structural study of InsGa1_a.P/GaAs interfaces grown by mombe
G
Kiriakidis,
J
Stoemenoe, A Ginoudi,
К
Tsagaraki, A Dimoulas, Ph Maurell and
J Ch
Garcia
A131 Mapping of GaAs and Si wafers and ion-implanted layers by light-induced scattering and
absorption of
m
light
J
Vaitkus,
E
Gaubas,
К
Jarasiimas and
M Petrauskas
A135 Recognition of
D
defects in silicon single crystals by preferential etching and effect on
gate oxide integrity
H
Yamagishi, I Fusegawa,
N
Fujimaki
and
M Katayama
A141 Inclusions in co-doped InP single crystals
R
Fornari,
P
Franzoei,
J
Kumar and
G Salviati
A146 bST-detected microprecipitates and their role in the performance of GaAs integrated
circuits
M Castagne,
3
P
Ffflard,
D Achvar and P Gali
A150 rebic-sem
characterisation of compound semiconductors
G
Рапід
and E Yakimov
A154
Characterisation of
surface
flatness by the backscattered electron coefficient
N G
Ushakov and
S
I Zaitsev
X-RAY TOPOGRAPHY AND GENERAL I
A158 X-ray topography and dmractometry of strained layer heteroepitaxial structures
S J
Barnett,
A M
Keir and
M Emeny
А163
Investigation,
of process-induced crystal defects in Si by x-ray topography
I
Fábián,
Ε Κ
Pál
and
Τ
Kormány
Α168
X-ray diagnostics of 2D strain profiles in semiconductor crystals
V Aristov,
S
Kuznetsov, A Nikulin and A Snigirev
A171 Mapping of diffusion length and depletion region width in Schottky diodes
О
V Kononchuk and
E
В
Yakimov
A175 Non-contact observations of photoconductivity decay and carrier lifetime measurements
in epitaxial silicon wafers
YOgita
A180 Applications of secondary ion mass spectrometry (sims) for the analysis of electronic
materials
D
Johnson and
S Hibbert
DEEP LEVEL MEASUREMENTS
A185 Non-contact mapping of heavy metal contamination for silicon
1С
fabrication
J
Lagowski,
P
Edelman,
M
Dexter and
W
Henley
A193 Characterisation of oxidation-induced stacking faults in
soi
structures by a new chemical
etching process
C Tsamis, D Tsoukalas, N GuDlemot, J
Stoemenos and
J Margail
A196 Characterisation of EL2 in GaAs wafers by scanning isothermal transient spectroscopy
H
Okusbi,
Y
Tokumaru and
H Naka
A202 Low-temperature spatially resolved photoconductivity in semi-insulating GaAs
J
Jiménez,
M
A Gonzalez,
L F Sanz, L R de
Angulo
and J
Bonnafé
A207
Mapping of non-radiative point defect distributions in semiconductors using
scanning
d
lts
О
Breitenstein
A211
Non-contact deep level transient spectroscopy
(dłts)
based on surface
photovoltage
J
Lagowski,
P
Edelman
and
A Morawski
CRYSTAL GROWTH AND GENERAL II
A215 Defects in and device properties of semi-insulating GaAs
О
Oda,
H
Yamamoto,
M
Seiwa,
G
Kano,
T
Inoue, M
Mori,
H
Shimakura and
M Oyake
A224
Improved uniformity of GaAs by carbon control
E
M
Ware,
P J
Doering,
В
Freidenreich,
R T Koegl and T
Collins
A229
Influence of dislocation density on I—V characteristics of InP
photodiodes
E
A Beam HI,
H
Temkin and
S Mahajan
A233 Vacancy-type defect» after post-growth heat treatment in si GaAs: a positron study
J
M
Clayton,
S G
üsmar,
A Alam, D
T J
Hurle and
D J
Stirłaud
A237
Phase-stepping microscopy (psm): a qualification tool for electron and
optoelectronic devices
P
С
Montgomery,
J P
Ffflard,
M Castagne and
D
Montaner
A243 Silicon device
thinning using preferential polishing: progress in flatness and
electrical properties
S
Wada,
S
Takahashi and
Y Hayashi
A249 Uniformity of improved high-quality GaAs and AlGaAs epilayers and Schottky barriers
prepared by molecular beam epitaxy
M
Missous
A255 On the nature of large-scale electrically active defect accumulations in InP and GaAs
V P
Kałinushkm,
V A Yuryev,
D
I
Murin
and
M G Ploppa
A263
Recombination—
generation behaviour of decorated defects in silicon
A Berg, I Brough,
J H
Evans,
G
Lorimer and A R Peaker
A269 A uniformity investigation of undoped, semi-insulating GaAs grown by the vertical
Bridgman technique
L
Breivik,
M R
Brozel,
D J
Stirland and
S
Tüzemen
A275 Two-dimensional mapping of implantation and annealing phenomena in GaAs by
photoinduced microwave reflectometry
M C
Heimlich,
E R Atwood
and R J
Gutmann
LIGHT SCATTERING AND GENERAL
ГИ
A279 Raman-
s
cat
tering
tomography studies on semiconductors
К
Sakai, Y
Kondo and
T Ogawa
A283 Laser-scanning tomography: a survey of recent investigations in semiconductor
materials
J P
Filłard,
P
Gall,
J
Bonnafé, M Castagne
and T
Ogawa
A2SS
Raman
microprobe
analysis of chemically revealed extended defects in GaAs
J
Jiménez,
E
Martín, A Carmelo Prieto and A Torres
A294
Spatially
resolved
study of dislocations in Si-doped
lec GaAs
by dsl, pl and ebic
J L Weyher, P J
van
der Wel and
C
Frigeri
АЗОО
Transmission electron microscope investigation of dislocation loops in Si-doped
GaAs crystals
T P
Chen,
L J
Chen,
T
S
Huang
and Y D Guo
A304
Evaluation
of interstitial oxygen along striations in cz silicon single crystals with a
micro-FTiB. mapping system
I Fusegawa and
H
Yamagishi
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| genre | (DE-588)1071861417 Konferenzschrift 1991 Wilmslow gnd-content |
| genre_facet | Konferenzschrift 1991 Wilmslow |
| id | DE-604.BV005594786 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:32:04Z |
| institution | BVB |
| isbn | 0750301880 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-003504594 |
| oclc_num | 25316003 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-384 DE-20 |
| owner_facet | DE-91 DE-BY-TUM DE-384 DE-20 |
| physical | 310 S. zahlr. Ill. u. graph. Darst. |
| publishDate | 1992 |
| publishDateSearch | 1992 |
| publishDateSort | 1992 |
| publisher | Hilger |
| record_format | marc |
| spelling | Defect recognition in semiconductors before and after processing proceedings of the fourth International Conference ; Wilmslow, UK, 18 - 22 March 1991 Ed. by M. R. Brozel ... Bristol u.a. Hilger 1992 310 S. zahlr. Ill. u. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Aus: Semiconductor science and technology ; 7. 1992 Gallium arsenide semiconductors Congresses Photoluminescence Congresses Semiconductors Defects Congresses Halbleiter (DE-588)4022993-2 gnd rswk-swf Fehlererkennung (DE-588)4133764-5 gnd rswk-swf Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Wilmslow gnd-content Gitterbaufehler (DE-588)4125030-8 s Halbleiter (DE-588)4022993-2 s DE-604 Fehlererkennung (DE-588)4133764-5 s Brozel, M. R. Sonstige oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003504594&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Defect recognition in semiconductors before and after processing proceedings of the fourth International Conference ; Wilmslow, UK, 18 - 22 March 1991 Gallium arsenide semiconductors Congresses Photoluminescence Congresses Semiconductors Defects Congresses Halbleiter (DE-588)4022993-2 gnd Fehlererkennung (DE-588)4133764-5 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4133764-5 (DE-588)4125030-8 (DE-588)1071861417 |
| title | Defect recognition in semiconductors before and after processing proceedings of the fourth International Conference ; Wilmslow, UK, 18 - 22 March 1991 |
| title_auth | Defect recognition in semiconductors before and after processing proceedings of the fourth International Conference ; Wilmslow, UK, 18 - 22 March 1991 |
| title_exact_search | Defect recognition in semiconductors before and after processing proceedings of the fourth International Conference ; Wilmslow, UK, 18 - 22 March 1991 |
| title_full | Defect recognition in semiconductors before and after processing proceedings of the fourth International Conference ; Wilmslow, UK, 18 - 22 March 1991 Ed. by M. R. Brozel ... |
| title_fullStr | Defect recognition in semiconductors before and after processing proceedings of the fourth International Conference ; Wilmslow, UK, 18 - 22 March 1991 Ed. by M. R. Brozel ... |
| title_full_unstemmed | Defect recognition in semiconductors before and after processing proceedings of the fourth International Conference ; Wilmslow, UK, 18 - 22 March 1991 Ed. by M. R. Brozel ... |
| title_short | Defect recognition in semiconductors before and after processing |
| title_sort | defect recognition in semiconductors before and after processing proceedings of the fourth international conference wilmslow uk 18 22 march 1991 |
| title_sub | proceedings of the fourth International Conference ; Wilmslow, UK, 18 - 22 March 1991 |
| topic | Gallium arsenide semiconductors Congresses Photoluminescence Congresses Semiconductors Defects Congresses Halbleiter (DE-588)4022993-2 gnd Fehlererkennung (DE-588)4133764-5 gnd Gitterbaufehler (DE-588)4125030-8 gnd |
| topic_facet | Gallium arsenide semiconductors Congresses Photoluminescence Congresses Semiconductors Defects Congresses Halbleiter Fehlererkennung Gitterbaufehler Konferenzschrift 1991 Wilmslow |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003504594&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT brozelmr defectrecognitioninsemiconductorsbeforeandafterprocessingproceedingsofthefourthinternationalconferencewilmslowuk1822march1991 |