Semiconductor electrodes:
Saved in:
| Format: | Book |
|---|---|
| Language: | English |
| Published: |
Amsterdam u.a.
Elsevier
1988
|
| Series: | Studies in physical and theoretical chemistry
55. |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Literaturangaben |
| Physical Description: | XXI, 519 S. graph. Darst. |
| ISBN: | 0444429263 |
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| 245 | 1 | 0 | |a Semiconductor electrodes |c ed. by Harry O. Finklea |
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| 490 | 1 | |a Studies in physical and theoretical chemistry |v 55. | |
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| adam_text | studies in physical and theoretical chemistry 55
SEMICONDUCTOR
ELECTRODES
Edited by
HARRY O FINKLEA
Department of Chemistry,
West Virginia University,
Morgantown, WV 26506,
U S A
ELSEVIER
Amsterdam — Oxford — New York — Tokyo 1988
IX
TABLE OF CONTENTS
PREFACE vil
LIST OF CONTRIBUTING AUTHORS x x l
Chapter 1
SEMICONDUCTOR ELECTRODE CONCEPTS AND TERMINOLOGY 1
Harry 0 Flnklea
1 Introduct ion 1
2 Fundamentals: The Energy Band Model 3
2 1 Energy bands In solids3
22 Charge carrier generation 5
2 3 The Fermi level 7
2 4 The effects of applied potential 10
2 5 Photo-effects at the semiconductor/electrolyte Interface 18
3 A Model for Electron Transfer Reactions 22
4 Measurement of the Platband Potential 27
4 1 The Mott-Schottky plot 27
4 2 The photocurrent onset potential 30
4 3 Open-circuit photovoltage 31
4 4 Other methods 31
5 Perturbations of the Ideal Model 32
5 1 Corrosion 32
5 2 Surface states 34
5 3 Doping Instabi l i ty 38
6 Miscellaneous Topics 38
6 1 Current doubling 38
6 2 Hot carriers 39
List of Symbols 39
References 41
Ciapter 2
TITANIUM DIOXIDE (T102) AND STRONTIUM TITANATE (SrTiOj) 43
Harry 0 Flnklea
i
1 Introduction 43
2 Bulk Properties 45
2 1 Crystal phases 45
211 T102 -s 45
4 The Platband Potential 70
5 Electrochemistry and Photoelectrochemistry 80
•J
5 2 Photoelectrochemistry 89
Optical
SrT103
properties
T1O2
SrT103
Electrical properties
T102
SrTiO3
Electrode Preparation and Surface Properties
e
Orientation and polishing
Doping
T102
SrT103
Doping by reduction
3211 T1O2
3212 SrT103
Doping by substitution
3221 T1O2
3222 SrTlO3
Etching
Ohraic (
TiO2
SrTiO3
:ontact and mounting
T102
SrTiO3
Mounting
Surface analysis
T1O2
SrT103
TiO2
SrTiO3
Problems associated with Vfb measurements
5 1 Aqueous voltammetry
T102
5111 Nonfaradalctprocesses
5112 Anodic processes
5113 Cathodlc processes
SrTIO,
XI
521 Water oxidation 89
5211 TiO2 89
(a) Potential dependence 89
(b) Wavelength dependence 91
(c) Intensity dependence 93
(d) Time dependence 93
(e) Quantum efficiency 94
(f) Stability 94
5212 SrT103 96
(a) Potential dependence 96
(b) Wavelength dependence 96
(c) Intensity dependence 96
(d) Quantum efficiency 97
(e) Stability 97
522 The mechanism of hole transfer to aqueous solutions 97
5221 Experimental observations 97
5222A review of proposed mechanisms 104
523 Cathodlc photocurrents 107
5 3 Non-aqueous voltammetry 108
6 Polycrystalllne Electrodes 120
1 TiO2
(a) The flatband potential
(b) Electrochemistry
(c) Photoelectrochemistry
2 SrTiO3
5 4 Surface states
(a)
(b)
(c)
(d)
(e)
(f)
(g)
(h)
Theoretical predictions
Deviations from ideal impedance
Anomalous cathodic currents
Kinetic competition for holes
Subbandgap photoeffects
Subbandgap light emission
Surface analysis
Fermi level pinning
6 1 TiO2
(a)
(b)
(c)
(d)
(e)
Chemical vapor deposition t
Anodized titanium
Sintered powders
Thermally oxidized titanium
Radio-frequency sputtering
XII
(f) Plasma jet 123
6 2 SrT103 124
7 Photoelectrochemical Reactions of Powders 124
7 1 T102 125
711 Photoelectrolysls 126
712 The photo-Kolbe reaction 128
722 Other substrates 129
7 2 SrT103 130
8 Miscellaneous Topics 130
8 1 Dye sensitizatlon 130
811 TiO2 131
812 SrTiO3 132
8 2 Chemically modified T1O2 132
Acknowledgments 133
References 133
Chapter 3
IRON OXIDE (Fe2O3) 147
Menahem Anderman and John H Kennedy
1 Introduction 147
2 Bulk Properties 147
2 1 Crystallography 147
2 2 Band structure 149
2 3 Conduction mechanism and charge carrier mobility 150
3 Electrode Preparation 153
3 1 Single crystals 153
3 2 Polycrystalline sintered pellets: preparation procedure 155
3 3 Polycrystalllne sintered pellets: the effect of sintering
temperature and dopant 156
3 4 Polycrystalllne thin film electrodes 159
3 5 Ohraic contacts 161
3 6 Surface treatment -p 161
4 Electrochemistry and Photoelectrochemistry 163
4 1 Current-potential curves in the dark 163
4 2 Photocurrent-potentlal curves 166
(1) Photocurrent quantum efficiency 166
vy (11) Photocurrents at low bandbendlng - transient effects 168
(ill) Behavior in nonaqueous electrolytes 172
4 3 Mott-Schottky plots x 173
XIII
4 4 Platband potentials 176
4 5 Photopotential measurements - 178
4 6 Electrode stabi l i ty 180
4 7 Competition reactions 182
4 8 p-Type ferric oxide 185
(I) Introduction 185
(II) Photocurrent characteristics 186
(ill) Photocurrent stability 187
(lv) Capacitance data and the location of the band edges 187
(v) Future work 189
5 Solar Energy Conversion Devices 189
51A single n-type Fe203/electrolyte junction 189
5 2 Multi-junction devices 190
(1) n/n Photodiode 190
(ii) p/n Photodiodes 193
5 3 Colloidal systems 196
5 4 -Fe2O3 and solar energy conversion 197
References 199
Chapter 4
TIN OXIDE (SnO 2) , INDIUM OXIDE (In2O3), AND TUNGSTEN OXIDE (W03) 203
A Nanthakumar and Neal R Armstrong
1 Introduction 203
2 Tin Oxide - SnO2 204
2 1 Crystal structure 204
2 2 Methods of growth 205
221 Methods of doping during growth 208
2 3 Electrical properties 209
2 4 Optical properties 210
2 5 Surface properties of tin oxide 211
2 6 Electrochemical and photoelectrochemlcal properties of SnO2
single crystals 213
2 7 Tin oxide polycrystalllne electrodes 215
271 Physical properties and method of preparation 215
272 Optical and electrical properties of polycrystalline
Sn02 Sn02 (doped with Sb or F), In2O3 and ITO 216
273 Electrochemical properties of polycrystalline SnO2
electrodes 216
274 Modified electrodes - tin dioxide % 219
XIV
3 Indium Oxide - In2O3 220
3 1 Crystal structure 220
3 2 Single crystal growth methods 221
3 3 Electrical properties 223
3 4 Optical properties 223
3 5 Photoelectrochemlcal and electrochemical properties 224
3 6 Polycrystalllne In2O3 electrodes 224
361 Physical properties, method of preparation 224
362 Electrochemical properties 225
4 Tungsten Oxide - W03 225
4 1 Physical properties and methods of growth 225
4 2 Electrical properties 228
4 3 Optical properties 228
4 4 Surface properties 229
4 5 Electrochemical and photoelectrochemlcal properties of W03
single crystals 229
4 6 Polycrystalline W03 electrodes 230
461 Pho toelec trocheiaical and electrochemical properties
of thin films 231
462 Electrochromlc properties of WO3 films 231
Conclusions 232
References 234
Chapter 5
SILICON (Si) AND GERMANIUM (Ge) 241
Nathan S Lewis and Andrew B Bocarsly
1 Introduction 241
2 Semiconductor Bulk Properties 241
2 1 Crystal growth techniques 241
2 2 Electronic properties 242
3 Electrode Preparation and Surface Properties of Silicon 245
3 1 Etchants 245
3 2 Ohmic contact formation 246
3 3 Standard behavior 247
3 4 Changes caused by use t 249
4 Electrochemistry and Photoelectrochemistry of Single Crystals 249
••J 4 1 Aqueous behavior 249
4 2 Nonaqueous behavior 251
421 Platband potentials x 251
XV
422 Voltammetric properties 252
423 Photoelectrode efficiencies 254
424 Miscellaneous applications of silicon photoelectrodes 255
5 Miscellaneous Topics on Silicon 255
5 1 Chemically derivatized silicon electrodes 255
511 Attachment of redox-actlve mediators 256
512 Derivatlzation with electronically conducting films 260
513 Burled junction cells 262
5 2 Polycrystalline silicon electrodes 264
5 3 Amorphous hydrogenated silicon ~ 264
531 Film properties 264
532 Aqueous behavior of a-Si:H photoelectrodes 265
533 Nonaqueous behavior of a-Si:H photoelectrodes 266
6 Germanium Photoelectrochemistry 267
6 1 Electrode preparation 267
6 2 Electrode behavior in aqueous electrolyte 267
6 3 Nonaqueous behavior 269
References 270
Chapter 6
CADMIUM CHALCOGENIDES (CdS, CdSe, CdTe) 277
R David Rauh
1 Introduction 277
2 Bulk Properties and Preparation 278
3 Electrochemistry and Photoelectrochemistry of Cd Chalcogenide
Single Crystals 282
3 1 Interface energetics 282
3 2 Dark and photoelectrochemistry in non-adsorbing electrolytes 289
3 3 Photoelectrochemistry in specifically adsorbing chalcogen ~
anion electrolytes 296
3 4 Luminescence of CdX electrodes 304
4 Polycrystalline and Thin Film Photoelectrodes 308
4 1 Ceramic photoelectrodes 308
4 2 Vacuum deposited CdX photoelectrodes 310
4 3 Electroplated CdX photoelectrodes t 312
4 4 Chemical bath deposition (CBD) 315
4 5 Painted film photoelectrodes 317
4 6 Spray pyrolytlc thin films 319
5 Future Directions ^ 320
XVI
Acknowledgments 321
References 321
Chapter 7
GALLIUM PHOSPHIDE (GaP) 329
David S Ginley and Michael A Butler
1 Introduction 329
2 Materials and Electronic Properties 330
2 1 Growth, structure and doping 330
2 2 Electronic properties 331
3 GaP Photoelectrochemistry 331
3 1 Platband potential 333
3 2 Above-bandgap photoresponse 336
3 3 Sub-bandgap photoresponse 340
(i) Surface treatment Induced states 342
(II) Electrochemical ion Implantation 345
(III) H and He implanted GaP 348
(iv) Chemically induced interface states 353
4 Chemistry of the GaP-Electrolyte Interface 357
4 1 GaP point of zero zeta potential (PZZP) 357
4 2 Stability 358
4 3 Surface chemistry 363
4 4 Surface modification 366
(i) Metal overlayers 366
(11) Selected metal ion deposition 367
(ill) Surface derlvatization with organics 368
5 Conclusions 369
Acknowledgment 370
References 370
Chapter 8
GALLIUM ARSENIDE (GaAs) 373
Karl W Frese, Jr
1 Introduction
t 373
2 Reference Data 373
3: Sample Preparation 375
3 1 Ohmlc contacts 375
3 2 Etching ^ 376
XVII
4 Adlayers on GaAs Surfaces and Fermi Level Pinning 378
4 1 Solid state devices 378
4 2 Electrochemical devices 380
5 Electrochemical Reactions 382
5 1 Electrochemical corrosion 382
511 Thermodynamlc aspects 382
512 Kinetic aspects 382
513 Effects of defects 385
514 Anodic dark current corrosion 387
515 Applications of corrosion reactions 388
516 Corrosion suppression 391
5 2 The hydrogen evolution reaction 392
5 3 C02 reduction 395
6 Photoelectrochemistry of GaAs 399
6 1 Flatband potential 399
6 2 Photoreactions on n-GaAs 403
6 3 Photoreactions on p-GaAs 406
7 Concluding Remarks 407
8 Acknowledgment 408
9 References 408
Chapter 9
INDIUM PHOSPHIDE (InP) 411
Lynn F Schneemeyer, Adam He l l er , and Barry Mi l ler
1 Introduction 411
2 Bulk Properties 411
2 1 Crystal chemistry 411
2 2 Crystal growth 412
221 Bulk crystal growth 412
(a) Gradient freeze 413
(b) Horizontal Bridgeman 414
(c) Zone melting 414
(d) Liquid encapsulated Czoch ralski (LEC) 414
222 Film growth 414
(a) Liquid phase epitaxy
f 414
(b) Chemical vapor deposition 415
(c) Molecular beam epitaxy 416
(d) Electrochemical deposition of InP 416
223 Dopants for InP * 417
XVIII
/
:2 3 Optical properties 417
231 Bandgap 417
232 Optical absorption 417
2 4 Band edges with respect to vacuum (flatband) 418
2 5 Charge carrier mobilities and diffusion lengths 418
2 6 Solid state photovoltalcs 418
261 Schottky barrier cells 419
262 Homojunction cells 419
263 Heterojunction cells 419
(a) n-Indlum tin oxide/p-InP cells 419
(b) CdS/InP cells 420
3 Electrode Preparation and Surface Properties 420
3 1 Polishing 420
3 2 Etching 421
3 3 Ohmic contacts 422
3 4 Characterization by surface spectroscoples 423
341 Surface photovoltage spectroscopy 423
342 Auger electron spectroscopy (AES) 423
343 Low energy electron diffraction (LEED) 424
344 Raman scattering 424
3 5 Surface states 424
4 Electrochemistry and Photoelectrochemistry of Single Crystals 425
4 1 Introduction - common characteristics 425
411 Band edges 426
412 Photocorrosion behavior 427
4 2 Photoanodes in aqueous regenerative cells 428
4 3 Photocathodes in aqueous regenerative cells 431
4 4 Nonaqueous cells (n- and p-type) 433
4 5 Hydrogen-evolving p-InP photocathodes 435
4 6 Photoelectrochemical etching 441
4 7 Other photoelectrochemical reactions 443
471 C02 reduction 443
472 S02 reduction , 444
5 Polycrystalllne InP Electrodes 445
5 1 Polycrystalllne electrode preparation 446
5 2 Behavior versus single crystals 447
5 3 Grain boundary passivation 447
6 ~)Hot Carrier Injection 447
7 Summary and Future Directions 449
References 451
XIX
Chapter 10
MOLYBDENUM AND TUNGSTEN DICHALCOGENIDES (MoX2 and WX2) 457
Bruno S c ro sati
1 Introduction 457
2 Molybdenum and Tungsten Dichalcogenldes Bulk Properties 460
3 Preparation of Electrodes and Photoelectrochemical Cells 465
4 Photoelectrochemlcal Characteristics of Molybdenum and Tungsten
Dichalcogenide Electrodes 468
4 1 Spectral responses 468
4 2 Current-voltage curves 476
4 3 Platband potential 480
5 Influence of the Surface Morphology on the Photoelectrochemical
Behavior of Layered Semiconductors 484
6 Photoelectrochemical Applications of Molybdenum and Tungsten
Dlchalcogenides 490
(a) Photoregenerative solar cells 490
(b) Photoelectrolysls solar cells 491
7 Photointercalation 495
8 Photoelectrochemlcal Behavior of Molybdenum and Tungsten
Dichalcogenide Electrodes in Non-Aqueous Electrolytes 496
9 Polycrystalline Molybdenum and Tungsten Dichalcogenide Electrodes 501
References 505
INDEX 509
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| language | English |
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| spelling | Semiconductor electrodes ed. by Harry O. Finklea Amsterdam u.a. Elsevier 1988 XXI, 519 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Studies in physical and theoretical chemistry 55. Literaturangaben Eletroquimica larpcal Electrodes, Oxide Semiconductors Elektrochemie (DE-588)4014241-3 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiterelektrode (DE-588)4158799-6 gnd rswk-swf Halbleiterelektrode (DE-588)4158799-6 s DE-604 Halbleiter (DE-588)4022993-2 s Elektrochemie (DE-588)4014241-3 s Finklea, Harry O. Sonstige oth Studies in physical and theoretical chemistry 55. (DE-604)BV000004482 55 HEBIS Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003483880&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Semiconductor electrodes Studies in physical and theoretical chemistry Eletroquimica larpcal Electrodes, Oxide Semiconductors Elektrochemie (DE-588)4014241-3 gnd Halbleiter (DE-588)4022993-2 gnd Halbleiterelektrode (DE-588)4158799-6 gnd |
| subject_GND | (DE-588)4014241-3 (DE-588)4022993-2 (DE-588)4158799-6 |
| title | Semiconductor electrodes |
| title_auth | Semiconductor electrodes |
| title_exact_search | Semiconductor electrodes |
| title_full | Semiconductor electrodes ed. by Harry O. Finklea |
| title_fullStr | Semiconductor electrodes ed. by Harry O. Finklea |
| title_full_unstemmed | Semiconductor electrodes ed. by Harry O. Finklea |
| title_short | Semiconductor electrodes |
| title_sort | semiconductor electrodes |
| topic | Eletroquimica larpcal Electrodes, Oxide Semiconductors Elektrochemie (DE-588)4014241-3 gnd Halbleiter (DE-588)4022993-2 gnd Halbleiterelektrode (DE-588)4158799-6 gnd |
| topic_facet | Eletroquimica Electrodes, Oxide Semiconductors Elektrochemie Halbleiter Halbleiterelektrode |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003483880&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV000004482 |
| work_keys_str_mv | AT finkleaharryo semiconductorelectrodes |