Heteroepitaxie von InP auf Si(001):
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | German |
| Published: |
1991
|
| Subjects: | |
| Physical Description: | VII, 181 S. |
Staff View
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV005406508 | ||
| 003 | DE-604 | ||
| 005 | 19940302 | ||
| 007 | t | ||
| 008 | 920422s1991 m||| 00||| ger d | ||
| 035 | |a (OCoLC)46104004 | ||
| 035 | |a (DE-599)BVBBV005406508 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a ger | |
| 049 | |a DE-12 |a DE-29T |a DE-634 |a DE-83 |a DE-11 |a DE-188 | ||
| 100 | 1 | |a Grundmann, Marius |d 1964- |e Verfasser |0 (DE-588)112740014 |4 aut | |
| 245 | 1 | 0 | |a Heteroepitaxie von InP auf Si(001) |c von Marius Grundmann |
| 264 | 1 | |c 1991 | |
| 300 | |a VII, 181 S. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Berlin, Techn. Univ., Diss., 1991 | ||
| 650 | 7 | |a Heteroepitaxie |2 swd | |
| 650 | 7 | |a Indiumphosphid |2 swd | |
| 650 | 7 | |a Kristallfläche |2 swd | |
| 650 | 7 | |a MOCVD-Verfahren |2 swd | |
| 650 | 7 | |a Silicium |2 swd | |
| 650 | 0 | 7 | |a Kristallfläche |0 (DE-588)4151344-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOCVD-Verfahren |0 (DE-588)4314628-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heteroepitaxie |0 (DE-588)4260178-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Indiumphosphid |0 (DE-588)4161535-9 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Heteroepitaxie |0 (DE-588)4260178-2 |D s |
| 689 | 0 | 1 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 2 | |a Kristallfläche |0 (DE-588)4151344-7 |D s |
| 689 | 0 | 3 | |a Indiumphosphid |0 (DE-588)4161535-9 |D s |
| 689 | 0 | 4 | |a MOCVD-Verfahren |0 (DE-588)4314628-4 |D s |
| 689 | 0 | |5 DE-604 | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-003383470 | ||
Record in the Search Index
| _version_ | 1804119617830912000 |
|---|---|
| any_adam_object | |
| author | Grundmann, Marius 1964- |
| author_GND | (DE-588)112740014 |
| author_facet | Grundmann, Marius 1964- |
| author_role | aut |
| author_sort | Grundmann, Marius 1964- |
| author_variant | m g mg |
| building | Verbundindex |
| bvnumber | BV005406508 |
| ctrlnum | (OCoLC)46104004 (DE-599)BVBBV005406508 |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01590nam a2200457 c 4500</leader><controlfield tag="001">BV005406508</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">19940302 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">920422s1991 m||| 00||| ger d</controlfield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)46104004</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV005406508</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">ger</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-12</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-634</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-11</subfield><subfield code="a">DE-188</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Grundmann, Marius</subfield><subfield code="d">1964-</subfield><subfield code="e">Verfasser</subfield><subfield code="0">(DE-588)112740014</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Heteroepitaxie von InP auf Si(001)</subfield><subfield code="c">von Marius Grundmann</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">1991</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">VII, 181 S.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Berlin, Techn. Univ., Diss., 1991</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Heteroepitaxie</subfield><subfield code="2">swd</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Indiumphosphid</subfield><subfield code="2">swd</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Kristallfläche</subfield><subfield code="2">swd</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">MOCVD-Verfahren</subfield><subfield code="2">swd</subfield></datafield><datafield tag="650" ind1=" " ind2="7"><subfield code="a">Silicium</subfield><subfield code="2">swd</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Kristallfläche</subfield><subfield code="0">(DE-588)4151344-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOCVD-Verfahren</subfield><subfield code="0">(DE-588)4314628-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heteroepitaxie</subfield><subfield code="0">(DE-588)4260178-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Indiumphosphid</subfield><subfield code="0">(DE-588)4161535-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Heteroepitaxie</subfield><subfield code="0">(DE-588)4260178-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Kristallfläche</subfield><subfield code="0">(DE-588)4151344-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Indiumphosphid</subfield><subfield code="0">(DE-588)4161535-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="4"><subfield code="a">MOCVD-Verfahren</subfield><subfield code="0">(DE-588)4314628-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-003383470</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV005406508 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T16:29:03Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-003383470 |
| oclc_num | 46104004 |
| open_access_boolean | |
| owner | DE-12 DE-29T DE-634 DE-83 DE-11 DE-188 |
| owner_facet | DE-12 DE-29T DE-634 DE-83 DE-11 DE-188 |
| physical | VII, 181 S. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| record_format | marc |
| spelling | Grundmann, Marius 1964- Verfasser (DE-588)112740014 aut Heteroepitaxie von InP auf Si(001) von Marius Grundmann 1991 VII, 181 S. txt rdacontent n rdamedia nc rdacarrier Berlin, Techn. Univ., Diss., 1991 Heteroepitaxie swd Indiumphosphid swd Kristallfläche swd MOCVD-Verfahren swd Silicium swd Kristallfläche (DE-588)4151344-7 gnd rswk-swf MOCVD-Verfahren (DE-588)4314628-4 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Heteroepitaxie (DE-588)4260178-2 gnd rswk-swf Indiumphosphid (DE-588)4161535-9 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Heteroepitaxie (DE-588)4260178-2 s Silicium (DE-588)4077445-4 s Kristallfläche (DE-588)4151344-7 s Indiumphosphid (DE-588)4161535-9 s MOCVD-Verfahren (DE-588)4314628-4 s DE-604 |
| spellingShingle | Grundmann, Marius 1964- Heteroepitaxie von InP auf Si(001) Heteroepitaxie swd Indiumphosphid swd Kristallfläche swd MOCVD-Verfahren swd Silicium swd Kristallfläche (DE-588)4151344-7 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Silicium (DE-588)4077445-4 gnd Heteroepitaxie (DE-588)4260178-2 gnd Indiumphosphid (DE-588)4161535-9 gnd |
| subject_GND | (DE-588)4151344-7 (DE-588)4314628-4 (DE-588)4077445-4 (DE-588)4260178-2 (DE-588)4161535-9 (DE-588)4113937-9 |
| title | Heteroepitaxie von InP auf Si(001) |
| title_auth | Heteroepitaxie von InP auf Si(001) |
| title_exact_search | Heteroepitaxie von InP auf Si(001) |
| title_full | Heteroepitaxie von InP auf Si(001) von Marius Grundmann |
| title_fullStr | Heteroepitaxie von InP auf Si(001) von Marius Grundmann |
| title_full_unstemmed | Heteroepitaxie von InP auf Si(001) von Marius Grundmann |
| title_short | Heteroepitaxie von InP auf Si(001) |
| title_sort | heteroepitaxie von inp auf si 001 |
| topic | Heteroepitaxie swd Indiumphosphid swd Kristallfläche swd MOCVD-Verfahren swd Silicium swd Kristallfläche (DE-588)4151344-7 gnd MOCVD-Verfahren (DE-588)4314628-4 gnd Silicium (DE-588)4077445-4 gnd Heteroepitaxie (DE-588)4260178-2 gnd Indiumphosphid (DE-588)4161535-9 gnd |
| topic_facet | Heteroepitaxie Indiumphosphid Kristallfläche MOCVD-Verfahren Silicium Hochschulschrift |
| work_keys_str_mv | AT grundmannmarius heteroepitaxievoninpaufsi001 |