Solid state device research 91: proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland
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| Format: | Tagungsbericht Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Amsterdam [u.a.]
Elsevier
1991
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| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben Aus: Microelectronic engineering ; 15 |
| Beschreibung: | XXIII, 697 S. Ill., zahlr. graph. Darst. |
| ISBN: | 0444890661 |
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| 245 | 1 | 0 | |a Solid state device research 91 |b proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland |c ed. by M. Ilegems ... |
| 264 | 1 | |a Amsterdam [u.a.] |b Elsevier |c 1991 | |
| 300 | |a XXIII, 697 S. |b Ill., zahlr. graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 500 | |a Literaturangaben | ||
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Datensatz im Suchindex
| _version_ | 1804119335132725248 |
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| adam_text | Xl
CONTENTS
Preface
v
Committees
/
Sponsors
vi
Timetable
viii
Session I A: Silicon Heterojunction Devices
L. TREITINGER
Recent progress in silicon homo- and heterojunction bipolar technology
(Invited Paper)
3
J.N.
BURGHARTZ,
J.D. CRESSLER, K.A. JENKINS, J.Y.-C. SUN,
J.M.C.
STORK, J.H. COMFORT, T.A. BRUNNER and C.L. STANIS
Device design issues for a high-performance bipolar technology
with Si of SiGe epitaxial base
11
A. FUKAMI, K.-l. SHOJI, T. NAGANO, T. TOKUYAMA and C.Y. YANG
Graded-bandgap SiGe bipolar transistor fabricated with germanium
ion implantation
15
J. CHANG, D.K. NAYAK, V.K. RAMAN, J.C.S. WOO, J.S. PARK,
K.L. WANG and C.R. VISWANATHAN
Low frequency noise in quantum-well
Ge^Si^
PMOSFET s
19
E. ZANONI, S. BIGLIARDI, P. PAVAN, P. PISONI and
С
CANALI
Measurements of avalanche effects and light emission in advanced
Si and SiGe bipolar transistors
23
A. GRUHLE,
P.A.
BADOZ, F. CHEVALIER, A. HALIMAOUI,
F. LALANNE,
M. MOUIS, J.L REGOLINI, G. VINCENT and D. BENSAHEL
Silicon etched-groove permeable base transistor fabrication with
cutoff frequencies {fT,1max) above
25
Ghz
27
M. MOUIS
Numerical study of a silicon permeable base transistor with a
non-uniform doping profile
31
D. UFFMANN and
С
ADAMSKI
Integrated Si/CoSi^Si-heterotransistors at high current densities
35
A. CHANTRE,
A. GRANIER,
N.
DEGORS and A. NOUAILHAT
Impact ionization effects in silicon vertical JFET s
39
xii Contents
Session I
В:
Modeling
Y. YAMADA
Nonstationary electron transport in realistic
submicron
BP-
SAINT GaAs
MESFETs evaluated by ensemble Monte Carlo simulation
45
Y. PAN and M. KLEEFSTRA
Monte Carlo studies on hole mobility in heavily doped
η
-type
silicon
49
H.
KOSINA,
Ph. LINDORFER and S. SELBERHERR
Monte-Carlo
-
Poisson
coupling using transport coefficients
53
M. SCHREMS, G.
HOBLER,
M. BUDIL, H.
PÖTZL
and J.
HAGE
Calculation of internal
gettering
sites after double-step and
CMOS-type thermal anneals
57
Y. SHIBATA, S. HASHIMOTO, K. TANIGUCHI and
С
HAMAGUCHI
Stripe width dependence of OED in
submicron
LOCOS structures
-
New boundary condition for self-interstitials
61
G.J. HEMINK,
R.C.M. WIJBURG,
P.B.M. WOLBERT and H.
WALLINGA
Modeling of VIPMOS hot electron gate currents
65
W.
SOPPA,
W.
KANÉRT
and
К.
HEIFT
Optimization of DMOS cell structures with a self-aligned source contact
for smart power applications by realistic numerical device simulation
69
J. WENG
Physical modeling of the transit time in bipolar transistors
73
Session I C: Compound Semiconductor Devices
J.
MUN
and A. MBAYE
ESPRIT II projects on compound semiconductors {Invited Paper)
79
T. MORIYA, K. OGASAWARA and S. MAEDA
Results of the superlattice devices project in Japan {Invited Paper)
87
H. KAWAI, K. FUNATO, K.
TAIRA
and F. NAKAMURA
Two DEG-base GaSb/lnAs hot electron transistors
95
Session II A: Characterization
H.
SALEMINK
and
O. ALBREKTSEN
Applications of scanning tunneling microscopy to the characterization
of semiconductor technologies and devices {Invited Paper)
101
Contents xiii
H.
BERGNER,
К.
HEMPEL,
Α.
KRAUSE
and U.
STAMM
Dynamic
laser beam testing of a n-MOS device
109
F.M. ROCHE,
S.D.
BOCUS and P.
GIRARD
Effect of well and substrate parameters on the latchup degradation
of CMOS structures during
е
-beam voltage contrast measurements
113
P. GHEZZI, F.
PIO,
С.
RIVA, A.
MATHEWSON, F. NAUGHTON and
P. O SULLIVAN
An
exponentially ramped current stress method providing a
wide range of dielectric parameters
117
A.C.G. WOOD and A.G. O NEILL
С
-V
profiling of delta layers in silicon by quantum and
classical approaches
121
B. LISS,
A. LINDGREN
and
O. ENGSTRÖM
Charging properties of
SIPOS
used as a passivation layer on silicon
125
Session
f
I B: Epitaxial Layers on Silicon
S.C. JAIN, P. BALK, M.S. GOORSKY and
S.S.
IYER
Strain relaxation in GeSi layers with uniform and graded composition
131
Z.A. SHAFI, A.S.R. MARTIN, J. WHITEHURST, P. ASHBURN,
D.J. GODFREY, C.J. GIBBINGS, I.R.C. POST,
CG. TUPPEN,
G.R.
BOOKER and M.E. JONES
Rapid thermal annealing of metastable and stable Si/Si^Gex
heterojunction bipolar transistors
135
V.V. AFANAS EV,
S.V.
NOVIKOV, N.S.
SOKOLOV
and N.L YAKOVLEV
MBE-grown (Ca,Sr)F2 layers on Si
(111)
and GaAs
(111):
Electronic structure of interfaces
139
F. BENYAÏCH,
F. PRIOLO, E. RIMINI,
С
SPINELLA,
P. WARD
and F.
BAROETTO
Epitaxial realignment of polycrystalline Si layers by rapid
thermal annealing
143
Session
II C:
Compound Semiconductor Processing
A. PARASKEVOPOULOS, R. WEBER, P.
HARDE
and
H.
SCHROETER-JANßEN
Simulation and experimental study of Zn outdiffusion during epitaxial
growth of a double heterostructure bipolar transistor structure
149
xiv Contents
I.
POLLENTIER,
Y. ZHU, B.
DE MEULEMEESTER, P. VAN DAELE
and P. DEMEESTER
Low
stress Pd/Ge-based ohmic contacts for GaAs epitaxial-lift-off
153
T.
CLAUSEN,
A.S. PEDERSEN and O. LEISTIKO
Contact
metallurgy optimization
for ohmic contacts
to InP
157
P. LAUNAY, B. BAMUENI,
A.M.
DUCHENOIS and P. BLANCONNIER
Self-aligned AIGaAs/GaAs HBT s with tungsten n and p type
ohmic contacts
161
Session III A: Silicon on Insulator Technology
T. MORIYA, T. WATANABE, I.
NAKANO
and
S. MAEDA
Results of the three-dimensional integrated circuits project in Japan
167
S. ONGA, S. KAMBAYASHI, M. YOSHIMI, K. NATORI and
M. KASHIWAGI
9.5
χ
9.5
mm2-area recrystallization,
бцт-уіагюіе
filling and
thin
1/4μιη
CMOS SOI designing for realizing three-dimensional
integrated circuit
175
K. OHTAKE, K. KIOI, T. SHINOZAKI, S. TOYOYAMA, K. SHIRAKAWA
and S. TSUCHIMOTO
Four-story structured character recognition sensor image with
3D
integration
179
Y. AKASAKA, Y. INOUE, M. NAKAYA and T. NISHIMURA
The
3-D 1С
with 4-layer structure for the fast range sensing system
183
Y. ITOH,
A. WADA,
К.
MORIMOTO,
Y.
TOMITA
and
К.
YAMAZAKI
4-layer
3-D IC
with a function of parallel signal processing
187
G.
ROOS,
В.
HOEFFLINGER,
M.
SCHUBERT and R. ZINGG
Manufacturability of SD-epitaxial-lateral-overgrowth CMOS circuits
with three stacked channels
191
S. WILLIAMS and S. CRISTOLOVEANU
In situ pseudo-MOS transistor in as-grown silicon on insulator wafers
195
С
LEROUX,
J.
GAUTIER, A.J AUBERTON-HERVÉ,
В.
GIFFARD
and M. SPALANZANI
Parasitic transients induced by floating substrate effect and bipolar
transistor on SOI technologies
199
L.J. McDAID, S. HALL, W. ECCLESTON and J.C. ALDERMAN
Reduction of the latch effect in SOI MOSFETs by the silicidation
of the source
203
Contents xv
G.
BADENES,
H.B.
ABEL,
H.
GASSEL,
G.
BURBACH
and H.
VOGT
Measurement of SOI film thickness
207
Session III B: Modeling
J.A. POWER, D. BARRY, A. MATHEWSON and W.A. LANE
Worst-case simulation using principal component analysis techniques:
An investigation
213
F. FASCHING,
С.
FISCHER,
S.
HALAMA,
H. PIMINGSTORFER,
H.
READ,
S. SELBERHERR, H.
STIPPEL,
W.
TUPPA,
P. VERHAS and K. WIMMER
A
new open technology
CAD
system
217
К.
SONODA,
К.
TANIGUCHI and
С.
HAMAGUCHI
Analytical device model including velocity overshoot effect for
ultra small MOSFETs
221
H.-J. WILDAU,
F. SCHEIDEMANTEL
and H.G.
WAGEMANN
Application of a linear scaling factor for modeling l-V-characteristics
of
submicron
MOSFETs with channel lengths down to
0.4
цт
225
R.M.D. VELGHE and F.M. KLAASSEN
Physics-based circuit-level model for sub-micron MOSFETs
229
A. TERAO and F. VAN
DE WIELE
An analytical model for GAA transistors
233
M. SCHUBERT, B. HOEFFLINGER, D. SCHROEDER and R.P. ZINGG
1D modeling of SOI MOSFETs using distinct quasi-Fermi potentials
237
Session III C: CMOS Technology
H. MINGAM
CMOS technologies for logic applications {Invited Paper)
243
Y.-S. CHOI, T.-P. RHEE, K.-D. YOO and T. WON
A new submicrcon MOSFET technology with gate overlap on
twin oxide (GOTO) LDD structure
253
M. LERME, G. GUEGAN,
S. DELÉONIBUS,
F. MARTIN,
M. HEITZMANN, F.
VINET,
С.
JAFFARD,
M.
BELLEVILLE,
M.
GUERIN,
G.
REIMBOLD
and
С.
LEROUX
A
fully scaled
0.5μιτι
CMOS process for fast random logic
257
XVI
Contents
Session III
D:
Compound Semiconductor Optoelectronics
D.L ROGERS
GaAs opto-electronic integrated circuits for high speed
optical communications {invited Paper)
679*
M.
STOLLENWERK,
D.
GRÜTZMACHER,
M.
MÖHRLE, F. FIDORRA
and K. HEIME
GalnAs/GalnAsP
SCH-MQW-laser emitting at
1.35
μηι
grown
by LP-MOVPE
263
A. TEMMAR, J.P. PRASEUTH, J.F. PALMIER and A. SCAVENNEC
AllnAs/GalnAs metal-semiconductor-metal
photodiodes
with very
low dark current
267
D.A. ALLAN, J. HERNIMAN, P.J. O SULLIVAN, P. BIRDSALL and
A. QUAYLE
Planar integration technologies for optoelectronic integrated circuits
271
V.
HURM,
J.
ROSENZWEIG,
M.
LUDWIG,
Α. ΑΧΜΑΝΝ,
W.
BENZ,
M. BERROTH,
R.
OSÓRIO,
A.
HÜLSMANN,
G.
KAUFEL,
К.
KÖHLER,
B.
RAYNOR and Jo. SCHNEIDER
10
Gbit/s monolithic integrated optoelectronic receiver using an
MSM
photodiode
and AIGaAs/GaAs HEMTs
275
P. CORREC, J.C. BOULEY and
С
MOREAU
Single-and multi-electrode distributed feedback lasers: Modelling
taking into account hole burning and comparison with experiment
279
Session III E: Photon Detectors
K.M.
STROHM, J.F. LUY, J.
BÜCHLER, F. SCHÄFFLER
and A. SCHAUB
Planar
100
GHz silicon detector circuits
285
U. HILLERINGMANN, K.
KNOSPE,
С.
HEITE,
К.
SCHUMACHER
and K. GOSER
A silicon based technology for monolithic integration of waveguides
and VLSI CMOS circuits
289
T. HOSHINO, H. ZOGG,
С
MAISSEN, J.
MASEK
and S. BLUNIER
Fabrication procedures of photovoltaic lead-chalcogenide-on-silicon
infrared sensor arrays for thermal imaging
293
T. OTAREDIAN and S.E.
WOUTERS
Optimization of the energy resolution of the diffusion based nuclear
radiation sensors
297
Contents xvii
Session IV A: Compound Semiconductor Devices
R.N. NOTTENBURG
Heterostructure bipolar transistors based on InP and application to
integrated circuits for lightwave communication (Invited Paper)
303
G. SCHWEEGER, F.G.
DELLA CORTE
and H.L
HARTNAGEL
Design and characteristics of a GaAs BMFET
313
B.
WILLEN
and U. WESTERGREN
The temperature dependent current gain of heterojunction
bipolar transistors
317
Session IV B: Compound Semiconductor Circuits
M.
ROCCHI
GaAs
&
Si MMIC building blocks: A moot point revisited (Invited Paper)
685*
U.
NOWOTNY,
M.
LANG,
M. BERROTH,
V.
HURM,
A.
HÜLSMANN,
G. KAUFEL, K.
KÖHLER,
B. RAYNOR
and Jo. SCHNEIDER
20
Gbit/s
2:1
multiplexer using
0.3
μηι
gate length double pulse
doped quantum well GaAs/AIGaAs transistors
323
M. BERROTH, V.
HURM, U.
NOWOTNY,
Α.
HÜLSMANN,
G. KAUFEL,
К.
KÖHLER,
В.
RAYNOR
and Jo. SCHNEIDER
A
2.5
ns
бхб-Ь
parallel multiplier using
0.5
μπι
GaAs/GaAIAs
heterostructure field effect transistors
327
Session IV C: Silicon on Insulator Devices
S.D.
BROTHERTON
Poly-crystalline silicon thin film devices for large area electronics
(Invited Paper)
333
U.
MAGNUSSON, B. EDHOLM
and
F. MASSZI
A lateral bipolar transistor concept on SOI using a self-aligned base
definition technique
341
O.
LE NÉEL
and M. HAOND
Subthreshold currents in
submicron
N
and PMOS and static
consumption of SRAMs circuits made in thin film SOI
345
T. OUÏSSE, G. GHIBAUDO,
J.
BRINI,
S. CRISTOLOVEANU
and G. BOREL
Hysteresis and critical phenomena in silicon on insulator MOSFET s
349
R. HOWES and W. REDMAN-WHITE
Frequency dependent small-signal drain characteristics in silicon-
on-sapphire MOSFETs
353
xviii Contents
Session IV
D:
Dynamic Memories
F.
HOFMANN, W.
HÄNSCH, H.
GEIB,
W.
RÖSNER, D.
TAKÁCS
and L.
RISCH
High capacitance isolated surrounding stacked trench cell for
advanced
DRAMs 359
D.
TEMMLER
Shrink potential, stability and yieldability of a multilayer vertical
stacked capacitor for
64/256
MDRAM
363
W.H.
KRAUTSCHNEIDER,
L.
RISCH,
К.
LAU
and
D. SCHMITT-LANDSIEDEL
Fully scalable gain memory cell for future
DRAMs 367
H.-M.
MÜHLHOFF,
J DIETL, L. KUSZTELAN
DRAM cell characterization by AC-impedance measurement
371
Session IV E: Power Devices
A.F.J. MURRAY, W.A. LANE,
CG.
CAHILL, J.D. BARRETT
Parasitic breakdown control in HVIC process integration
377
S. HIDALGO, J.
FERNÁNDEZ,
F.
BERTA,
P. GODIGNON,
J.
REBOLLO
AND
J. MILLÁN
Design
and fabrication of improved resurfed LDMOS devices
381
Session V A: Silicon
Microsensors
and Microactuators
H. GUCKEL
Silicon
microsensors:
Construction,
design
and performance
{Invited
Paper)
387
F.
RUDOLF and J. BERGQVIST
Silicon micromachining for sensor
applications {Invited
Paper)
399
R.A.
BUSER,
J.
BRUGGER and N.F. DE ROOIJ
Micromachined
silicon cantilevers and tips for scanning
probe microscopy
407
C. LINDER,
M. GRÉTILLAT and N.F. DE ROOIJ
Realization of different polysilicon resonators with integrated
excitation and detection elements
411
Q. DONG, W.
BENECKE
and H. SCHLIWINSKI
SiON-Au double layer
microactuator
fabrication
415
Contents xix
H. BALTES,
D.
MOSER,
R.
LENGGENHAGER
and O.
BRAND
Thermal microtransducers by CMOS technology combined with
micromachining
419
A. MERLOS,
С.
CANE,
J.
BAUSELLS and J.
ESTEVE
Modelization and fabrication of ISFET based sensors
423
Session V B: Hot Carrier Effects in MOSFETs
M. STEIMLE and H.-M.
MÜHLHOFF
Limitations of digital CMOS-processes for analog applications due
to channel length modulation and hot carrier degradation
429
M. ORLOWSKI,
C. MAZURÉ
and
M. NOELL
A new vertically layered elevated hot carrier resistant source/drain
structure for deep
submicron
MOSFETs
433
E. DE SCHRIJVER,
P.
HEREMANS, R. BELLENS,
G. GROESENEKEN
and H.E. MAES
Analysis of post-stress effects in passivated MOSFETs after
hot-carrier stress
437
Q. WANG, W.H.
KRAUTSCHNEIDER,
M.
BROX and W. WEBER
Time dependence of hot-carrier degradation in LDD nMOSFETs
441
A. ASENOV, J.
BERGER,
W.
WEBER,
M.
BOLLU and
F. KOCH
Hot-carrier degradation monitoring in LDD n-MOSFETs using drain
gated-diode measurements
445
E.A.
GUTIÉRREZ
D., L
DEFERM and
G. DECLERCK
Transconductance degradation and its correlation to the second
substrate current hump of
submicron NMOS
LDD transistors
449
С
BERGONZONI and G.
DALLA LIBERA
A physical characterization of dynamically stressed CMOS transistors
453
E. SIMOEN, B. DIERICKX, M.-H.
GAO
and
С
CLAEYS
Influence of hot-carrier stress on the kink/hysteresis behavior of
NMOST s operating at liquid helium temperatures
457
AT. DEJENFELT and
O. ENGSTRÖM
MOSFET mobility degradation due to interface-states, generated
by Fowler-Nordheim electron injection
461
xx Contents
Session
V C:
Silicon Processing
К. МАЕХ
Rapid
thermal
processing and thin film technologies {Invited Paper)
467
B.
PIOT,
К.
BARLA,
В.
GARCIN and A. STRABONI
Boron diffusion effects from p+ polysilicon gate in thin thermal oxide
and plasma nitrided oxide
475
С
MAZURÉ,
J.
FITCH,
D.
DENNING,
С.
GUNDERSON,
M.
HAOND,
A. STRABONI,
В.
PIOT and
K. BARLA
Thin dielectric behavior and boron penetration under high temperature
H2
SEG prebake
479
P. LETOURNEAU, A. HARB, M. DUTOIT and J. SOLO
DE ZALDIVAR
Effect of nitrogen profile on electrical characteristics of ultrathin
SiO2 films nitrided by RTP
483
L
FERLAZZO, G. LORMAND and G.
REIMBOLD
Passivation effects on step AlCu/TiN line electromigration performance
487
Session VI A: BICMOS and Bipolar Technologies
A.R. ALVAREZ
Future trends in BiCMOS technology {invited Paper)
493
H.
KLOSE
BICMOS
-
The technology for integrating systems onto one silicon
1С
{invited Paper)
501
R. HADAWAY, P. KEMPF, P. SCHVAN,
M. ROWLANDSON,
V. HO,
J.
KOLK,
В.
TAIT,
D.
SUTHERLAND,
G.
JOLLY and I.
EMESH
A sub-micron BiCMOS technology for telecommunications
513
R.
DEKKER,
R.
VAN
ES, S.
JANSEN,
P.
KRANEN,
H.
MAAS,
Α.
PRUIJMBOOM
and J. VAN
DER
VELDEN
Optimization of the high-frequency performance of the BASIC
bipolar technology
517
Y.S. KOO, S.H.
CHAI,
K.S. NAM and
С
AN
A
43
ps Si bipolar technology
521
M. BIANCO, K. EHINGER, B. HAUTKE, H.
KLOSE
and
H. v.
PHILIPSBORN
Borosilicate glass and its applications in bipolar technology
525
D.J. DOYLE and W.A. LANE
On the temperature dependence of polysilicon emitter transistors
529
Contents xxi
N. SIABI-SHAHRIVAR, H.A. KEMHADJIAN, W. REDMAN-WHITE,
P. ASHBURN and J.D. WILLIAMS
The effects of scaling and rapid thermal annealing on the 1/f Noise of
polysilicon emitter bipolar transistors
533
Session VI B:
Submicron
MOSFETs
J.-P.
MIÉVILLE,
M. ESCHLE, Z.M. SHI, J. BARRIER and M. DUTOIT,
Ü.M.
MORET and Y. OPPLIGER
Quantum transport effects in deep
submicron n-MOSFET
539
Z.M. SHI, J.-P.
MIÉVILLE,
J.
BARRIER and M. DUTOIT
Low frequency noise in
100
nm n-MOSFET s at low temperatures
543
O.
ROUX,
В.
DIERICKX,
E.
SIMOEN,
С.
CLAEYS,
G. GHIBAUDO
and J.
BRINI
Investigation
of
drain
current
RTS noise
in small area silicon
MOS transistors
547
M.J. VAN DORT, P.H. WOERLEE, A.J. WALKER, C.A.H. JUFFERMANS
and H. LIFKA
Effects of high normal electric fields in deep
submicron
MOSFET s
551
J.A.M. OTTEN
and
F.M. KLAASSEN
Determination of the gate-voltage dependent series resistance and
channel length in sub micron LDD-MOSFETs
555
T. SKOTNICKI, G. MERCKEL and
С
DENAT
Triggering and sustaining of snapback in MOSFETs
559
S.
LUCHERINI
A high threshold low capacitance MOSFET
563
Session
VI C:
Compound Semiconductor Devices
H.
KÜNZEL,
W.
PASSENBERG,
J.
BÖTTCHER
and
C. HEEDT
Optimization of the AllnAs growth temperature for AllnAs/GalnAs
HEMTs grown by MBE
569
M.V.
BAETA MOREIRA,
M.A. PY
and M. ILEGEMS
MBE
growth and characterization of MODFET
hete
restructures using
pseudomorphic InGaAs or InAs/GaAs superlattice channels
573
M.A. PY, Y. HADDAB, Z.M. SHI, H.-J.
BÜHLMANN,
M.V.
BAETA MOREIRA
and
M.
ILEGEMS
Extraction of
FET
parameters at low drain bias by taking into account
the dependence of mobility on 2D electron gas concentration
577
xxii Contents
E.
ZANONI,
С.
TEDESCO, A. PACCAGNELLA,
С.
CANALI,
S.
BIGLIARDI
and M.
MANFREDI
High energy photon emission in GaAs MESFETs and AIGaAs/GaAs HEMTs
581
P. BHATTACHARYA, J. SINGH, S. GOSWAMI and W.-Q. LI
Integrated quantum well bipolar devices for tunable detection and
optical logic applications {Invited Paper)
585
K.
WOLTER,
R.
SCHWEDLER,
В.
GALLMANN,
Ch.
JAEKEL,
M.
STOLLENWERK, J. CAMASSEL,
J.P. LAURENTI and S. JUILLAGUET
Optical characterization of strained InGaAs/lnP quantum well structures
593
W. PITROFF, H.G. BACH and
G. BEISTER
On the numerical simulation of
С
-V
measurements at ¡sotype and
anisotype heterojunctions
597
Session
VII A:
Non-Volatile Memories
M. MELANOTTE,
R. BEZ
and G. CRISENZA
Non
volatile memories
-
Status and emerging trends {invited Paper)
603
M.J. HART, P.J. CACHARELIS, R.D. CARPENTER, D.G. TSUEI,
R.U. MADURAWE, B.S. SANDHU, R.G.
SMOLEN,
A.P. DUMLAO,
T.L. GAVERICK, T. McFARLANE and M.H. MANLEY
A back-biased
0.65
μπι
Leffn CMOS
EEPROM
technology for
next-generation sub
7
ns programmable logic devices
613
J. VAN
HOUDT,
D.
WELLEKENS,
G. GROESENEKEN,
L DEFERM
and H.E. MAES
The high injection
MOS
cell: A novel
öV-only
flash
EEPROM
concept
with
a
1џѕ
programming time
617
С
PAPADAS,
G. GHIBAUDO, G. PANANAKAKIS,
С.
RIVA
and P. GHEZZI
Programming window degradation in FLOTOX
EEPROM
cells
621
С
BERGONZONI,
E. CAMERLENGHI
and P. CAPRARA
Device simulations for
EPROM
cells scaling down
625
F. GIGON
Compact spice model of EEprom memory cell for writing/erasing/read
operation
629
A. SOENNECKEN, U. HILLERINGMANN and K. GOSER
Floating gate structures as nonvolatile analog memory cells in
1
^m-LOCOS-CMOS technology with PZT
dieléctrica
633
Contents xxiii
Session
VII
В:
Isolation
Techniques
W. WAKAMIYA,
Y.
OHNO,
H. KIMURA and S. SATOH
Sub-half
micron isolation
method with self-aligned channel stopper
639
N.A.H. WILS
and
A.H.
MONTREE
A
new sealed poly buffer LOCOS isolation scheme
643
G. GUEGAN, S. DELEONIBUS, M. LERME, G.
REIMBOLD
and P. MOLLE
Optimisation
of
isolation for
0.5
џт
CMOS technology using
SILO
process with
R. T.
N.
of silicon
647
J.P.
CABAÑAL
and
M.
HAOND
Improved shallow trench isolation for sub-halfmicron CMOS
651
G.
FALLICO,
С.
RAPISARDA, P.J. WARD and R. ZAMBRANO
A new process for defect-free definition of active areas in deep trench
isolated bipolar devices
655
Session
VII
С:
Nanostructures
L
EAVES
Low dimensional devices: High magnetic field and optical spectroscopy
studies of resonant tunneling and quantum well phenomena {Invited Paper)
661
H. BRUGGER, U.
MEINERS,
С.
WÖLK,
R.
DEUFEL, A. MARTEN,
M. ROSSMANITH,
Κ. ν.
KLITZING and
R.
SAUER
Pseudomorphic two-dimensional electron-gas-emitter resonant
tunneling devices
663
Y.D. GALEUCHET,
H. ROTHUIZEN
and P. ROENTGEN
MOVPE on patterned substrates: A new fabrication method for nanometer
structure devices
667
N.
BLANC, P.
GUÉRET,
R. GERMANN and H. ROTHUIZEN
Study of vertical transport through Schottky-gated, laterally confined
quantum-dot devices
671
J.J.M. KWASPEN, H.C. HEYKER, Th.G. VAN
DE ROER
Microwave noise behaviour of resonant tunnelling diodes
675
AUTHOR INDEX
693
These papers arrived too late to be placed in their correct position
within the volume
AUTHOR INDEX
693
ABEL, H.B.,
207
ADAMSKI, C,
35
AFANAS EV, V.V.,
139
AKASAKA, Y.,
183
ALBREKTSEN, O.,
101
ALDERMAN, J.C.,
203
ALLAN, D.A.,
271
ALVAREZ, A.R.,
493
AN, C,
521
ASENOV,
Α.,
445
ASHBURN, P.,
135, 533
AUBERTON-HERVÉ, A.J.,
199
AXMANN,
Α.,
275
BACH, H.G.,
597
BADENES,
G.,
207
BADOZ,
P.A., 27
BAETA MOREIRA, M.V.,
573, 577
BALK, P.,
131
BALTES, H.,
419
BAMUENI,
В.,
161
BARLA,
К.,
475, 479
BAROETTO,
F., 143
BARRETT.J.D., 377
BARRIER, J., 539, 543
BARRY, D., 213
BAUSELLS, J., 423
BEISTER, G., 597
BELLENS, R.,
437
BELLEVILLE,
M.,
257
BENECKE, W., 415
BENSAHEL,
D.,
27
BENYAÏCH,
F., 143
BENZ,
W.,
275
BERGER,
J.,
445
BERGNER,
H.,
109
BERGONZONI, C,
453, 625
BERGQVIST, J.,
399
BERROTH, M.,
275, 323, 327
BERTA,
F., 381
BEZ, R.,
603
BH
ATTACH
ARYA,
P.,
585
BIANCO,
M.,
525
BIGLIARDI,
S.,
23, 581
BIRDSALL, P.,
271
BLANC, N.,
671
BLANCONNIER,
P.,
161
BLUNIER, S.,
293
BOCUS,
S.D., 113
BOLLU, M.,
445
BOOKER,
G.R.,
135
BOREL, G.,
349
BÖTTCHER,
J.,
569
BOULEY, J.C.,
279
BRAND, O.,
419
BRINI,
J.,
349, 547
BROTHERTON,
S.D., 333
BROX, M.,
441
BRUGGER, H.,
663
BRUGGER, J.,
407
BRUNNER, T.A., 11
BÜCHLER,
J.,
285
BUDIL, M.,
57
BÜHLMANN, H.-J., 577
BURBACH, G.,
207
BURGHARTZ, J.N., 11
BUSER, R.A., 407
CABAÑAL, J.P.,
651
CACHAREÜS, P.J., 613
CAHILL,
CG., 377
CAMASSEL,
J.,
593
CAMERLENGHI, E.,
625
CANALI,
С,
23, 581
CANE,
С,
423
CAPRARA,
P.,
625
CARPENTER, R.D.,
613
CHAI, S.H.,
521
CHANG, J.,
19
CHANTRE,
Α.,
39
CHEVALIER,
F., 27
CHOI, Y.-S.,
253
CLAEYS,
С,
457, 547
CLAUSEN,
T.,
157
COMFORT, J.H.,
11
CORREC, P.,
279
CRESSLER, J.D.,
11
CRISENZA, G.,
603
CRISTOLOVEANU, S.,
195, 349
DALLA LIBERA,
G.,
453
DE MEULEMEESTER,
В.,
153
DE ROOIJ, N.F.,
407, 411
DE
SCHRIJVER, E.,
437
DECLERCK, G.,
449
DEFERM, L,
449, 617
DEGORS,
N.. 39
694
Author Index
DEJENFELT, A.T.,
461
DEKKER, R.,
517
DELÉONIBUS, S.,
257, 647
DELLA CORTE, F.G.,
313
DEMEESTER,
P.,
153
DENAT,
С,
559
DENNING, D.,
479
DEUFEL, R.,
663
DIERICKX,
В.,
457, 547
DIETL, J.,
371
DONG, Q.,
415
DOYLE, DJ., 529
DUCHENOIS,
A.M.,
161
DUMLAO, A.P.,
613
DUTOIT,
M.,
483, 539, 543
EAVES, L,
661
ECCLESTON,
W.,
203
EDHOLM,
В.,
341
EHINGER,
К.,
525
EMESH,
I.,
513
ENGSTRÖM, O.,
125, 461
ESCHLE,
M.,
539
ESTEVE, J.,
423
FALLICO,
G.,
655
FASCHING, F., 217
FERLĄZZO,
L,
487
FERNÁNDEZ,
J.,
381
FIDORRA, F., 263
FISCHER,
С,
217
FITCH, J.,
479
FUKAMI,
Α.,
15
FUNATO, K.,
95
GALEUCHET, Y.D.,
667
GALLMANN,
В.,
593
GAO, M.-H.,
457
GARCIN,
В.,
475
GASSEL, H.,
207
GAUTIER, J.,
199
GAVERICK, T.L.
613
GEIB, H.,
359
GERMANN, R.,
671
GHEZZI,
P.,
117, 621
GHIBAUDO, G.,
349, 547, 621
GIBBINGS, C.J.,
135
GIFFARD,
В.,
199
GIGON,
F., 629
GIRARD, P.,
113
GODFREY,
DJ., 135
GODIGNON, P.,
381
GOORSKY, M.S.,
131
GOSER, K.,
289, 633
GOSWAMI, S.,
585
GRANIER,
Α.,
39
GRÉTILLAT, M.,
411
GROESENEKEN,
G.,
437, 617
GRUHLE,
Α.,
27
GRÜTZMACHER,
D.,
263
GUCKEL, H.,
387
GUĘGAN,
G.,
257, 647
GUÉRET, P.,
671
GUERIN, M.,
257
GUNDERSON, C,
479
GUTIERREZ, E.A.,
449
HADAWAY, R.,
513
HADDAB, Y.,
577
HAGE, J.,
57
HALAMA,
S.,
217
HALIMAOUI,
Α.,
27
HALL, S.,
203
HAMAGUCHI,
С,
61, 221
HÄNSCH,
W.,
359
HAOND,
M.,
345, 479, 651
HÂRB,
Α.,
483
HARDE,
P.,
149
HART, M.J., 613
HARTNAGEL, KL,
313
HASHIMOTO,
S.,
61
HAUTKE,
В.,
525
HEEDT,
С,
569
HEIFT,
К.,
69
HEIME,
К.,
263
HEITE,
С,
289
HEITZMANN,
M.,
257
HEMINK, G.J., 65
HEMPEL,
К.,
109
HEREMANS,
P.,
437
HERNIMAN,
J.,
271
HEYKER,
H.C.,
675
HIDALGO,
S.,
381
HILLERINGMANN, U.,
289, 633
HO,
V.,
513
HOBLER,
G.,
57
HOEFFLINGER,
В.,
191,237
HOFMANN, F., 359
HOSHINO,
T.,
293
HOWES, R.,
353
HÜLSMANN,
Α.,
275, 323, 327
HURM,
V.,
275, 323, 327
ILEGEMS, M.,
573, 577
INOUE, Y.,
183
Author Index
695
ITOH, Y.,
187
IYER,
S.S., 131
JAEKEL, Ch.,
593
JAFFARD, C,
257
JAIN, S.C.,
131
JANSEN, S., 517
JENKINS, K.A.,
11
JOLLY, G.,
513
JONES, M.E.,
135
JUFFERMANS, C.A.H.,
551
JUILLAGUET, S.,
593
KAMBAYASHI, S.,
175
KANÉRT, W.,
69
KASHIWAGI,
M.,
175
KAUFEL,
G.,
275, 323, 327
KAWAI,
H.,
95
KEMHADJIAN,
H.A., 533
KEMPF, P.,
513
KIMURA, H.,
639
KIOI, K.,
179
KLAASSEN, F.M.,
229, 555
KLEEFSTRA, M.,
49
KLITZING, K. v.,
663
KLOSE,
H.,
501, 525
KNOPSE,
К.,
289
KÖHLER,
К.,
275, 323, 327
KOLK, J., 513
KOO, Y.S., 521
KOSINA,
H.,
53
KRANEN,
P.,
517
KRAUSE,
Α.,
109
KRAUTSCHNEIDER, W.H., 367, 441
KÜNZEL,
Η.,
569
KUSZTELAN,
L.,
371
KWASPEN, J.J.M.,
675
LALANNE,
F., 27
LANE, W.A.,
213, 377, 529
LANG,
M.,
323
LAU,
К.,
367
LAUNAY, P.,
161
LAURENTI, J.P.,
593
LE NÉEL,
О.,
345
LEISTIKO,
О.,
157
LENGGENHAGER,
R.,
419
LERME, M.,
257, 647
LEROUX,
С,
199, 257
LETOURNEAU, P.,
483
LI, W.-Q.,
585
LIFKA, H.,
551
LINDGREN,
Α.,
125
LINDER, C,
411
LINDORFER,
Ph.,
53
LISS,
В.,
125
LORMAND,
G.,
487
LUCHERINI,
S.,
563
LUDWIG,
M.,
275
LUY, J.F., 285
MAAS,
H.,
517
MADURAWE, R.U., 613
MAEDA,
S.,
87, 167
MAES, H.E.,
437, 617
МАЕХ,
К.,
467
MAGNUSSON, U.,
341
MAISSEN,
С,
293
MANFREDI,
M.,
581
MANLEY, M.H.,
613
MARTEN,
Α.,
663
MARTIN, A.S.R.,
135
MARTIN,
F., 257
MASEK, J.,
293
MASSZI,
F., 341
MATHEWSON,
Α.,
117,213
MAZURÉ, C,
433, 479
ΜΒΑΥΕ, Α.,
79
McDAID, L.J.,
203
McFARLANE,
T.,
613
MEINERS,
U.,
663
MELANOTTE, M.,
603
MERCKEL, G.,
559
MERLOS,
Α.,
423
MIÉVILLE, J.-P.,
539, 543
MILLAN,
J.,
381
MINGAM, H.,
243
MÖHRLE,
M.,
263
MOLLE, P.,
647
MONTREE, A.H.,
643
MOREAU,
С,
279
MORÉT, J.M.,
539
MORIMOTO,
К.,
187
MORIYA,
T.,
87, 167
MOSER, D., 419
MOUIS, M.,
27, 31
MÜHLHOFF,
Н.-М.,
371, 429
MUN, J.,
79
MURRAY, A.F.J.,
377
NAGANO,
T.,
15
NAKAMURA,
F., 95
NAKANO, I.,
167
NAKAYA, M.,
183
NAM, K.S.,
521
696
Author Index
NATORI, K.,
175
NAUGHTON,
F., 117
NAY
AK, D.K., 19
NISHIMURA, T.M.,
183
NOELL, M.,
433
NOTTENBURG, R.N.,
303
NOUAILHAT,
Α.,
39
NOVIKOV,
S.V., 139
NOWOTNY,
U.,
323, 327
O NEILL, A.G.,
121
O SULLIVAN, P.,
117
O SULLIVAN, P.J.,
271
OGASAWARA, K.,
87
OHNO, Y.,
639
OHTAKE, K.,
179
ONGA, S.,
175
OPPLIGER, Y.,
539
ORLOWSKI, M.,
433
OSÓRIO, R,.,
275
OTAREDIAN,
T.,
297
OTTEN, J.A.M.,
555
OUÏSSE, T.,
349
PACCAGNELLA,
Α.,
581
PALMIER, J.F.,
267
PAN,
Y.,
49
PANANAKAKIS,
G.,
621
PAPADAS,
С,
621
PARASKEVOPOULOS,
Α.,
149
PARK, J.S.,
19
PASSENBERG, W.,
569
PAVAN,
P.,
23
PEDERSEN, A.S.,
157
PHILIPSBORN,
Η. ν.,
525
PIMINGSTORFER,
Η.,
217
ΡΙΟ,
F., 117
PIOT,
В.,
475, 479
PISONI,
P.,
23
PITROFF,
W.,
597
POLLENTIER,
I.,
153
POST, I.R.C.,
135
PÖTZL,
Η.,
57
POWER, J.A., 213
PRASEUTH, J.P., 267
PRIOLO, F., 143
PRUUMBOOM,
Α.,
517
PY,
MA,
573
PY, M.A., 577
QUAYLE,
Α.,
271
RAMAN, V.K.,
19
RAPISARDA,
С,
655
RAYNOR,
В.,
275, 323, 327
READ,
Η.,
217
REBOLLO, J.,
381
REDMAN-WHITE,
W.,
353, 533
REGOLINI, J.L,
27
REIMBOLD,
G.,
257, 487, 647
RHEE, T.-P.,
253
RIMINI,
E.,
143
RISCH,
L,
359, 367
RIVA,
С,
117, 621
ROCCHI,
M.,
685
ROCHE, F.M.,
113
ROENTGEN,
P.,
667
ROGERS, D.L,
679
ROOS,
G.,
191
ROSENZWEIG, J., 275
RÖSNER,
W.,
359
ROSSMANITH,
M.,
663
ROTHUIZEN,
H.,
667, 671
ROUX,
О.,
547
ROWLANDSON, M.,
513
RUDOLF, F., 399
SALEMINK,
H.,
101
SANDHU,
B.S.,
613
SATOH,
S.,
639
SAUER, R., 663
SCAVENNEC,
Α.,
267
SCHÄFFLER, F., 285
SCHAUB,
Α.,
285
SCHEIDEMANTEL, F., 225
SCHLIWINSKI, H., 415
SCHMITT-LANDSIEDEL, D., 367
SCHNEIDER, Jo., 275, 323, 327
SCHREMS, M., 57
SCHROEDER, D., 237
SCHROETER-JANßEN, H., 149
SCHUBERT, M., 191, 237
SCHUMACHER, K., 289
SCHVAN,
P.,
513
SCHWEDLER, R., 593
SCHWEEGER, G.M. 313
SELBERHERR, S., 53, 217
SHAFI, Z.A., 135
SHI, Z.M., 539, 543, 577
SHIBATA, Y., 61
SHINOZAKI,
T.,
179
SHIRAKAWA, K., 179
SHOJI, K.-l., 15
SIABI-SHAHRIVAR, N.. 533
SIMOEN, E., 457, 547
Author Index
697
SINGH, J.,
585
SKOTNICKI,
T.,
559
SMOLEN, R.G.,
613
SOENNECKEN,
Α.,
633
SOKOLOV, N.S.,
139
SOLO DE ZALVIDAR, J.,
483
SONODA, K.,
221
SOPPA, W.,
69
SPALANZANI,
199
SPINELLA, C,
143
STAMM,
U.,
109
STANIS,
CL,
11
STEIMLE
M.,
429
STIPPEL,
H.,
217
STOLLENWERK,
M.,
263, 593
STORK,
J.M.C.,
11
STRADONI,
Α.,
475, 479
STROHM,
K.M., 285
SUN, J.Y.-C,
11
SUTHERLAND, D.,
513
TAIRA, K.f
95
TAIT,
В.,
513
TAKÁCS,
D.,
359
TANIGUCHI,
К.,
61, 221
TEDESCO,
С,
581
TEMMAR,
Α.,
267
TEMMLER,
D.,
363
TERÃO,
Α.,
233
TOKUYAMA,
T.,
15
TOMITA,
Y.,
187
TOYOYAMA, S.,
179
TREITINGER,
L,
З
TSUCHIMOTO, S.,
179
TSUEI, D.G.,
613
TUPA, W.,
217
TUPPEN,
CG., 135
UFFMANN,
D.,
35
VAN DAELE, P.,
153
VAN
DE WIELE,
F., 233
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ES, R., 517
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|
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| dewey-search | 621.381/52 |
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| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
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| genre_facet | Konferenzschrift 1991 Montreux |
| id | DE-604.BV005179989 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:24:33Z |
| institution | BVB |
| institution_GND | (DE-588)3012074-3 |
| isbn | 0444890661 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-003201583 |
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| physical | XXIII, 697 S. Ill., zahlr. graph. Darst. |
| publishDate | 1991 |
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| spelling | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland ed. by M. Ilegems ... Amsterdam [u.a.] Elsevier 1991 XXIII, 697 S. Ill., zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Aus: Microelectronic engineering ; 15 Semiconductors Congresses Mikroelektronik (DE-588)4039207-7 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Festkörper (DE-588)4016918-2 gnd rswk-swf Festkörperbauelement (DE-588)4154179-0 gnd rswk-swf Halbleiterschaltung (DE-588)4158811-3 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Montreux gnd-content Mikroelektronik (DE-588)4039207-7 s Halbleiterbauelement (DE-588)4113826-0 s DE-604 Festkörperbauelement (DE-588)4154179-0 s Halbleiterschaltung (DE-588)4158811-3 s Festkörper (DE-588)4016918-2 s Ilegems, Marc Sonstige oth ESSDERC 21 1991 Montreux Sonstige (DE-588)3012074-3 oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003201583&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland Semiconductors Congresses Mikroelektronik (DE-588)4039207-7 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Festkörper (DE-588)4016918-2 gnd Festkörperbauelement (DE-588)4154179-0 gnd Halbleiterschaltung (DE-588)4158811-3 gnd |
| subject_GND | (DE-588)4039207-7 (DE-588)4113826-0 (DE-588)4016918-2 (DE-588)4154179-0 (DE-588)4158811-3 (DE-588)1071861417 |
| title | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland |
| title_auth | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland |
| title_exact_search | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland |
| title_full | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland ed. by M. Ilegems ... |
| title_fullStr | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland ed. by M. Ilegems ... |
| title_full_unstemmed | Solid state device research 91 proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland ed. by M. Ilegems ... |
| title_short | Solid state device research 91 |
| title_sort | solid state device research 91 proceedings of the 21st european solid state device research conference essderc 91 16 19 september 1991 montreux switzerland |
| title_sub | proceedings of the 21st European Solid State Device Research Conference ESSDERC '91, 16 - 19 September 1991 Montreux, Switzerland |
| topic | Semiconductors Congresses Mikroelektronik (DE-588)4039207-7 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Festkörper (DE-588)4016918-2 gnd Festkörperbauelement (DE-588)4154179-0 gnd Halbleiterschaltung (DE-588)4158811-3 gnd |
| topic_facet | Semiconductors Congresses Mikroelektronik Halbleiterbauelement Festkörper Festkörperbauelement Halbleiterschaltung Konferenzschrift 1991 Montreux |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=003201583&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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