Insulating films on semiconductors 1991: proceedings from the 7th biennial European conference, including Satellite Workshops on Silicon on Insulator: Materials and device technology and the physics of hot electron degradation in Si MOSFETs held at the University of Liverpool, 2nd to 6th April 1991
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Bristol u.a.
Hilger
1991
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | X, 344 S. graph. Darst. |
| ISBN: | 0750301686 |
Internformat
MARC
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| 245 | 1 | 0 | |a Insulating films on semiconductors 1991 |b proceedings from the 7th biennial European conference, including Satellite Workshops on Silicon on Insulator: Materials and device technology and the physics of hot electron degradation in Si MOSFETs held at the University of Liverpool, 2nd to 6th April 1991 |c ed. by W. Eccleston ... |
| 246 | 1 | 3 | |a Infos '91 |
| 264 | 1 | |a Bristol u.a. |b Hilger |c 1991 | |
| 300 | |a X, 344 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
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| 500 | |a Literaturangaben | ||
| 650 | 4 | |a Electric insulators and insulation |x Thin films |v Congresses | |
| 650 | 4 | |a Metal insulator semiconductors |v Congresses | |
| 650 | 4 | |a Metal oxide semiconductors |v Congresses | |
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| 711 | 2 | |a INFOS (Conference on Insulating Films on Semiconductors) |n 7 |d 1991 |c Liverpool |j Sonstige |0 (DE-588)5065589-9 |4 oth | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002965810&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
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Datensatz im Suchindex
| _version_ | 1804118931434110976 |
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| adam_text | Contents
xi
Preface
Invited Papers
1—18
Discrete conductance fluctuations and related phenomena in
metal-oxide-silicon device structures
K R
Farmer
19-32
Oxidation of silicon
A M Stoneham
33-42
UV and plasma effects in the Si/SiOj system
J
Kassabov
43-51
Hot-electron transport studies in SiO2 using
soft
-х
ray induced internal
photoemission
E
Cartier
and
F R McFeely
53-63
Interface and oxide engineering for high quality
SIMOX
devices
S Cristoloveanu
Workshop Papers
65-72
The relationship of trapping and trap creation in silicon dioxide films to
hot carrier degradation of Si MOSFETs
D J
DiMaría
73-82
Charge trapping and degradation of thin dielectric layers
M M
Heyns
and A V
Schwerin
83-92
Hot carrier-induced degradation modes in thin-gate insulator dual-gate
MISFETs
H Iwai
93-106
The impact of hot carrier degradation on scaling of
sub
-μπι
CMOS
processes
H M
Mühlhoff,
M Steimle
and J Dietl
107-116
SOI
CMOS devices
M Haond
and O
Le Néel
117-125
Poly-Si thin film
transistors
S
D
Brotherton
vi
Contents
Contributed Papers
Section
1:
Fundamental Electronic Processes and Measurements
127-130
Modelling of individual interface states in MOSFETs
M
Schulz
131-134
Tunneling resonance by barrier symmetrisation tuning at the
Si-SiOj—interface
Τ
Poppe,
M
Bollu
and
F
Koch
135-138
Hole trap analysis in SiOj/Si structures by electron tunneling
M
Schmidt and
H
Koster
jr
139-142
Interface trap measurements using 3-level charge pumping
NS Saks,
M G
Ancona
and Wenliang Chen
143—146
Individual attractive defect centers in the Si—SiO2 interface
A Karmann and
M
Schulz
147—150
Electron trapping-induced conductance- and noise-dynamics in ultra-
thin metal—oxide—silicon tunnel diodes
M
O Andersson, K R Farmer and O Engström
151-154
Interface
state
distributions
and the center of reconstruction model
HFlietner
Section
2:
Growth and Properties of Grown Oxides of Silicon
155-158
Dynamics of silicon oxide growth: molecular simulation and test
V V Pham,
R Razafindratsita, G
Sarrabayrouse and
J J
Simonne
159—162
Effect of preliminary atomic hydrogen treatment on Si oxidation
1
A Aizenberg, A VAndrianov,
S
VNosenko and
VA Khvostov
163-166
An effective oxidation technique for the formation of thin SiO2 at
sg5O0°C
V Nay
ar
and I W Boy
d
167-170
Effects of cooling rate on
MOS
interface properties
К
Heyers,
A Esser,
H
Kurz and
P
Balk
171-174
Origin of reliability differences in oxides grown by RTO in
HC1/O2
and
pure O2 ambients
К
Barlow and V Nayar
175-178
Low pressure thermal oxide applicable as bottom oxide in oxide-
nitride—oxide triple layers
E P
Burte and A Bauer
179—182
Electrical characteristics of Cl-implanted thin gate oxides
S
Verhaverbeke,
M M
Heyns
and
R F
De Keersmaecker
Contents
vii
183-186
Noise and other electrical characteristics of CMOS FETs fabricated with
furnace, Anodic and rapid thermal oxides
D C
Murray,
J C
Carter,
N Afshar-Hanaii,
AGR
Evans,
S
Taylor,
J
Zhang and
W
Eccleston
Section
3:
Properties of Deposited Dielectrics
187—190
Thin TiO2 as a film with a high dielectric constant
A
Spitzer,
H
Reisinger,
J
Willer,
W
Hönlein,
H
Cerva
and G
Zorn
191-194 Diffusion
of hydrogen in and into LPCVD silicon oxynitride films
C
HM
Marée, W M A
Вік
and
F H P M
Habraken
195-198
Characterization of SiO2 films deposited by reactive excimer laser
ablation of SiO target
A Slaoui,
E
Fogarassy,
С
Fuchs
and
P
Siffert
199-202
Low pressure MOCVD of tantalum oxide
E P
Burte and
N Rausch
203-206
Epitaxial
ñuoride films
on semiconductors: MBE growth and
photoluminescent
characterization
N S Sokolov,
S
V
Novikov
and N L Yakovlev
207-210
Improved surface treatments and passivation procedures of GaAs
crystals controlled by
photoluminescence
measurements
SKKrawczyk, MGendry,
J
Tardy,
F
Krafft,
P
Viktorovitch,
P
Abraham, A Bekkaoui,
Y
Montei!,
R
Schütz, R Riemenschneider,
R
Richter
and H L
Hartnagel
211 -214
Low temperature chemical vapor deposition of Si3N4 thin films assisted
by electrical discharge
B Balland,
R
Botton,
J
С
Bureau,
Z
Sassi,
J
Prudori
and
M Lemiti
Section
4:
Defects and Impurities in SiO2
215-218
Depassivation of Pb sites by heat and electric field
E H Poindexter, G J Gerardi, F C Rong, W R
Buch wald and
D J Keeble
219-222
Information
on the spatial distribution of Pb defects at the (lll)Si/SiO2
interface revealed by ESR observation of dipolar interactions
A Stesmans and
G
Van Gorp
223-226
Radiation damage in SiO/Si structures induced by high energy heavy
ions
M
С
Busch,
A Slaoui,
E
Dooryhee,
M
Toulemonde and
P
Siffert
227-230
The effect of zinc in silicon dioxide gate dielectrics
T
Brožek, V
Y Kiblik,
ОІ
Logush and G F
Romanova
viii Contents
Section
5:
Poły
and Amorphous Structures
231-234
Drain bias instability in polycrystalline silicon thin film transistors
N D
Young,
S D
Brotherton
and A Gill
235-238
Low temperature plasma oxidation of polycrystalline silicon
Ρ
К
Hurley,
J
F
Zhang,
W
Eccleston and
P
Coxon
239-242
The effect of phosphorus implantation dose on the gap-state density in
polycrystalline silicon
P
Vassilev,
R
Paneva,
V K
Gueorguiev and
L I
Popova
Section
6:
Hot Carrier Phenomena
243-246
Purely electronic dielectric breakdown of thin SiO2 films
J
Suñé,
E
Farrés,
M
Nafría
and X
Aymerich
247-250
Spatially-resolved measurements of hot-carrier generated defects at the
Si-SiO2
interface
A Asenov,
J
Berger,
P
Speckbacher,
F
Koch and
W
Weber
251 -254
Modeling and characterization of
submicron P-channel
MOSFETs
locally degraded by hot carrier injection
A Hassein-Bey and
S Cristoloveanu
255-258
Gate-controlled electroluminescence from reverse-biased Si-MOSFET
drain contacts
A
Kux,
MSchels,
F
Koch and
W
Weber
259-262
Electron spin resonance study of trapping centers in
SIMOX
buried
oxides
J
F
Conley,
P
M
Lenahan and
P
Roitman
263-266
Oxide
field dependence of bulk and interface trap generation in SiO2 due
to electron injection
A V
Schwerin
and
M M
Heyns
Section
7:
Degradation and Trapping in SiO2
267-270
The role of the two-step process in hot-carrier degradation
M
Brox and
W
Weber
271-274
AC hot carrier degradation behaviour in n- and p-channel MOSFETs
and in CMOS inverters
R
Bellens,
P
Heremans,
G
Groeseneken and
H E
Maes
275—278
Correlation of generated electron traps in degraded silicon dioxide
J
F
Zhang,
S
Taylor and
W
Eccleston
Contents ix
279-282
Defects of oxidized
< 100 >
silicon surfaces induced by high electric field
stress from low
(100
K) to high
(450
K) temperatures and relation with
the trivalent silicon defect
D
Vuillaume,
R
Bouchakour,
M Jourdain, G Salace and A
El-Hdiy
283-286
Homogeneous hole injection into gate oxide layers of MOSFETs:
injection efficiency, hole trapping and Si/SiOj interface state generation
A V
Schwerin
and
M M
Heyns
287-290
Fast and slow interface state changes in Fowler-Nordheim stressed
capacitors
M J
Uren
291-294
Detrapping of trapped electrons in SiO2 under Fowler-Nordheim stress
J
F
Zhang,
S
Taylor and
W
Eccleston
295-298
Characterization of hot-carrier effects in short channel NMOS devices
using low frequency noise measurements
M J
Deen
and
С
Quon
299-302
A
search
for protons
in irradiated
MOS
oxides
J T
Kriek,
J
W Gabryś,
D
I Semon and
P M
Lenahan
303-306
Prediction of hot electron degradation in MOSFETs: a comparative
study of theoretical energy distributions
CCC
Leung and
P
A Childs
Section
8:
Silicon on Insulator
307-310
Anneal characteristics of
E
[
centres in buried oxide layers and oxide
precipitates in silicon
R
C Barklie,
Г
J
Ennis,
K J Reeson and PLF Hemment
311-314
An application of a new chemical etching process for oxidation induced
stacking faults in
SIMOX
structures; comparison with silicon
С
Tsamis,
D
Tsoukalas,
N
Guillemot,
J
Stoemenos and
J
Margail
315—318
Infrared microscopic spectroscopy analysis of silicon on insulator
bevelled samples
J
Samitier,
A Pérez-Rodríguez,
В
Garrido,
J R
Morante
and
PLF Hemment
319-322
Silicon-on-insulator
waveguides
N Mohd Kassim, T M
Benson,
D E Davies and A McManus
323-326
Evaluation of
SOI/SIMOX
structures by Raman scattering
measurements obtained at different excitation powers
A Pérez-Rodríguez,
F
Commina,
J R
Morante, J Jiménez,
PLF Hemment and K P Homewood
327-330
Investigation
of hysteresis and floating-body effects in SOI-MOSFETs
TOuisse,
G
Ghibaudo,
J
Brini,
S
Cristoloveanu and
G
Borei
χ
Contents
331-334
A comparison of the relative merits of n+ or p+ polysilicon gates for
ultra thin SOI MOSFETs
G
A Armstrong and
W
D
French
335—338
A study of heavy doping effects on the performance of thin film
SOI MOSFETs
G
A Armstrong and
W
D
French
339—342
Determination of generation lifetime in thin film silicon-on-insulator
(SOI) material using capacitance time, charge time and gated diode
measurements
L J
McDaid,
S
Hall, WEccleston and
J C
Alderman
343-344
Author Index
|
| any_adam_object | 1 |
| author2 | Eccleston, W. |
| author2_role | edt |
| author2_variant | w e we |
| author_facet | Eccleston, W. |
| building | Verbundindex |
| bvnumber | BV004822008 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.99.M44 |
| callnumber-search | TK7871.99.M44 |
| callnumber-sort | TK 47871.99 M44 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 7570 |
| classification_tum | ELT 279f ELT 321f |
| ctrlnum | (OCoLC)35514872 (DE-599)BVBBV004822008 |
| dewey-full | 621.38152 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.38152 |
| dewey-search | 621.38152 |
| dewey-sort | 3621.38152 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
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| indexdate | 2024-07-09T16:18:08Z |
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| oclc_num | 35514872 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-384 DE-355 DE-BY-UBR DE-83 DE-11 |
| owner_facet | DE-91 DE-BY-TUM DE-384 DE-355 DE-BY-UBR DE-83 DE-11 |
| physical | X, 344 S. graph. Darst. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | Hilger |
| record_format | marc |
| spelling | Insulating films on semiconductors 1991 proceedings from the 7th biennial European conference, including Satellite Workshops on Silicon on Insulator: Materials and device technology and the physics of hot electron degradation in Si MOSFETs held at the University of Liverpool, 2nd to 6th April 1991 ed. by W. Eccleston ... Infos '91 Bristol u.a. Hilger 1991 X, 344 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturangaben Electric insulators and insulation Thin films Congresses Metal insulator semiconductors Congresses Metal oxide semiconductors Congresses Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Heißes Elektron (DE-588)4159455-1 gnd rswk-swf Nichtleiter (DE-588)4123451-0 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf SOI-Technik (DE-588)4128029-5 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1991 Liverpool gnd-content Halbleiter (DE-588)4022993-2 s Nichtleiter (DE-588)4123451-0 s Dünne Schicht (DE-588)4136925-7 s DE-604 SOI-Technik (DE-588)4128029-5 s Heißes Elektron (DE-588)4159455-1 s Eccleston, W. edt INFOS (Conference on Insulating Films on Semiconductors) 7 1991 Liverpool Sonstige (DE-588)5065589-9 oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002965810&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Insulating films on semiconductors 1991 proceedings from the 7th biennial European conference, including Satellite Workshops on Silicon on Insulator: Materials and device technology and the physics of hot electron degradation in Si MOSFETs held at the University of Liverpool, 2nd to 6th April 1991 Electric insulators and insulation Thin films Congresses Metal insulator semiconductors Congresses Metal oxide semiconductors Congresses Dünne Schicht (DE-588)4136925-7 gnd Heißes Elektron (DE-588)4159455-1 gnd Nichtleiter (DE-588)4123451-0 gnd Halbleiter (DE-588)4022993-2 gnd SOI-Technik (DE-588)4128029-5 gnd |
| subject_GND | (DE-588)4136925-7 (DE-588)4159455-1 (DE-588)4123451-0 (DE-588)4022993-2 (DE-588)4128029-5 (DE-588)1071861417 |
| title | Insulating films on semiconductors 1991 proceedings from the 7th biennial European conference, including Satellite Workshops on Silicon on Insulator: Materials and device technology and the physics of hot electron degradation in Si MOSFETs held at the University of Liverpool, 2nd to 6th April 1991 |
| title_alt | Infos '91 |
| title_auth | Insulating films on semiconductors 1991 proceedings from the 7th biennial European conference, including Satellite Workshops on Silicon on Insulator: Materials and device technology and the physics of hot electron degradation in Si MOSFETs held at the University of Liverpool, 2nd to 6th April 1991 |
| title_exact_search | Insulating films on semiconductors 1991 proceedings from the 7th biennial European conference, including Satellite Workshops on Silicon on Insulator: Materials and device technology and the physics of hot electron degradation in Si MOSFETs held at the University of Liverpool, 2nd to 6th April 1991 |
| title_full | Insulating films on semiconductors 1991 proceedings from the 7th biennial European conference, including Satellite Workshops on Silicon on Insulator: Materials and device technology and the physics of hot electron degradation in Si MOSFETs held at the University of Liverpool, 2nd to 6th April 1991 ed. by W. Eccleston ... |
| title_fullStr | Insulating films on semiconductors 1991 proceedings from the 7th biennial European conference, including Satellite Workshops on Silicon on Insulator: Materials and device technology and the physics of hot electron degradation in Si MOSFETs held at the University of Liverpool, 2nd to 6th April 1991 ed. by W. Eccleston ... |
| title_full_unstemmed | Insulating films on semiconductors 1991 proceedings from the 7th biennial European conference, including Satellite Workshops on Silicon on Insulator: Materials and device technology and the physics of hot electron degradation in Si MOSFETs held at the University of Liverpool, 2nd to 6th April 1991 ed. by W. Eccleston ... |
| title_short | Insulating films on semiconductors 1991 |
| title_sort | insulating films on semiconductors 1991 proceedings from the 7th biennial european conference including satellite workshops on silicon on insulator materials and device technology and the physics of hot electron degradation in si mosfets held at the university of liverpool 2nd to 6th april 1991 |
| title_sub | proceedings from the 7th biennial European conference, including Satellite Workshops on Silicon on Insulator: Materials and device technology and the physics of hot electron degradation in Si MOSFETs held at the University of Liverpool, 2nd to 6th April 1991 |
| topic | Electric insulators and insulation Thin films Congresses Metal insulator semiconductors Congresses Metal oxide semiconductors Congresses Dünne Schicht (DE-588)4136925-7 gnd Heißes Elektron (DE-588)4159455-1 gnd Nichtleiter (DE-588)4123451-0 gnd Halbleiter (DE-588)4022993-2 gnd SOI-Technik (DE-588)4128029-5 gnd |
| topic_facet | Electric insulators and insulation Thin films Congresses Metal insulator semiconductors Congresses Metal oxide semiconductors Congresses Dünne Schicht Heißes Elektron Nichtleiter Halbleiter SOI-Technik Konferenzschrift 1991 Liverpool |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002965810&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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