Computational electronics: semiconductor transport and device simulation
Saved in:
| Format: | Book |
|---|---|
| Language: | English |
| Published: |
Boston [u.a.]
Kluwer Acad. Press
1991
|
| Series: | The Kluwer international series in engineering and computer sicence : VLSI, computer architecture and digital signal processing
|
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Literaturangaben |
| Physical Description: | X, 268 S. graph. Darst. |
| ISBN: | 0792390881 |
Staff View
MARC
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| 245 | 1 | 0 | |a Computational electronics |b semiconductor transport and device simulation |c ed. by K. Hess ... |
| 264 | 1 | |a Boston [u.a.] |b Kluwer Acad. Press |c 1991 | |
| 300 | |a X, 268 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a The Kluwer international series in engineering and computer sicence : VLSI, computer architecture and digital signal processing | |
| 500 | |a Literaturangaben | ||
| 650 | 4 | |a Integrated circuits |x Computer simulation |v Congresses | |
| 650 | 4 | |a Semiconductors |x Computer simulation |v Congresses | |
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Record in the Search Index
| _version_ | 1804118631161790464 |
|---|---|
| adam_text | TABLE
OF
CONTENTS
Program Committee
.................................................................................. xi
Preface
.......................................................................................................xiii
-
DRIFT-DIFFUSION SIMULATION
Device Simulation for Silicon ULSI
..................................................... 3
M. R. Pinto, W. M. Coughran, Jr.,
C. S.
Rafferty,
R. K.
Smith and
E. Sangiorgi
Drift-Diffusion Systems: Variational Principles
and Fixed Point Maps for Steady State
Semiconductor Models
.......................................................................... 15
J. W.
Jerome
Drift-Diffusion Systems: Analysis of Discretized Models
................... 21
T.
Kerkhoven
Simulation of a Steady-State Electron Shock Wave
in
a Submicron
Semiconductor Device Using
High-Order Upwind Methods
................................................................ 27
E. Fatemi,
C. L.
Gardner,
J.
W.
Jerome,
S. Osher
and D. J.
Rose.
Adaptive Mesh Refinement for 2-D Numerical
Analysis of Semiconductor Devices
..................................................... 33
I. Son, T.-W. Tang and A. Eydeland.
Adaptive Grids for Semiconductor Modelling
..................................... 37
G. F. Carey, J. Schmidt and M. Sharma
A Numerical Large Signal Model for the
Heterojunction Bipolar Transistor.
.......................................................43
D. A. Teeter, J. R. East, R. K. Mains
and G. I. Haddad.
The Program OSMOSIS: A Rigorous Numerical
Implementation of Augmented Drift-Diffusion
Equation for the Simulation of Velocity Overshoot
............................47
E. C
Kan, U. Ravaioli and T.
Kerkhoven.
VI
A New
Technique
for Including Overshoot Phenomena
in Conventional Drift-Diffusion Simulators
......................................... 51
P. A. Blakey, X.-L. Wang, C. M. Maziar
and P. A.
Sandborn
A Self-Consistent Calculation of Spatial Spreading
of the Quantum Well in
HEMT
............................................................ 55
S.-H. Ng, R. Khoie and R. Venkat
A New Nonparabolic Hydrodynamic Model with Quantum
Corrections
............................................................................................. 59
D. L. Woolard, M.
A. Stroscio,
M. A. Littlejohn,
R. J.
Trew
and H. L.
Grubin
The Conditions of Device Simulation Using Full
Hydrodynamic Equations
....................................................................... 63
J. Zhou, A. M. Kriman and
D. K.
Ferry
-
MONTE CARLO SIMULATION
-
BOLTZMANN EQUATION
Device Simulation Augmented by the
Monte Carlo Method
.............................................................................. 69
M. A. Littlejohn, J. L. Pelouard,
W. C. Koscielniak and
D. L.
Woolard
Ensemble Monte Carlo Simulation of Femtosecond
Laser Excitation in Semiconductors
...................................................... 75
D, K. Ferry,
A. M. Kriman, M. J.
Kann,
H.
Hida and S. Yamaguchi
Dynamics of Photoexcited Carriers in GaAs
........................................ 81
C. J. Stanton and
D. W.
Bailey
The DAMOCLES Monte Carlo Device Simulation Program
.............. 87
S. E. Laux and M. V. Fischetti
Iterative Spectral Solution of Boltzmann s
Equation for Semiconductor Devices
.................................................... 93
B. H. Floyd and Y. L.
Le Coz
Computer Experiments for High Electron Mobility
Transistors and Avalanching Devices
...................................................97
K. F. Brennan,
Y. Wang,
and
D. H.
Park
Vil
Minority
Electron
Transport Across
Submicron
Layers of GaAs and InP
........................................................................107
M. A. Osman
and
N.
S. Dogan
Photoconductive Switch Simulation with
Absorbing Boundary Conditions
..........................................................
Ill
R. P. Joshi, K. M. Connolly,
S. El-Ghazaly and R. O.
Grondin
Simulation of Sub-Micron GaAs MESFETs for
Microwave Control
................................................................................115
S. A. Khan and
R. J.
Gutmann
Eigenvalue Solution to Steady-State Boltzmann Equation
..................119
S. Krishnamurthy and M. van Scnilfgaarde
Variable Threshold Heterostructure
FET
Studied by Monte Carlo Simulation
.....................................................123
G. U. Jensen and M. Shur
A Study of the Relaxation-Time Model based
on the Monte Carlo Simulation
.............................................................127
S.-C. Lee and T.-W. Tang
Field Assisted Impact Ionization in Semiconductors
...........................131
J.
Bude,
К.
Hess and
G. J. Iafrate
Parallelization of
Monte
Carlo Algorithms
in Semiconductor Device Physics on Hypercube
Multiprocessors
......................................................................................137
U. A. Ranawake, P. Lenders and S. M. Goodnick
Comparative Numerical Simulations of a GaAs
Submicron
FET
Using the Moments of the Boltzmann
Transport and Monte Carlo Methods
....................................................141
J. P. Kreskovsky, G. A. Andrews, B. J. Morrison
and
H. L.
Graban
J-V Characteristics of Graded
AlxGai_xAs
Heterojunction Barriers Using the Self
Consistent Ensemble Monte Carlo Method
..........................................145
R. Kamoua, J. R. East and G. I. Haddad
VIU
Monte
Carlo Simulation of Lateral Surface
Superlattices in a Magnetic Field
..........................................................149
T. Yamada, A. M. Kriman and D. K.
Feny
Quantum-Well Infrared Photodetectors:
Monte Carlo Simulations of Transport
................................................153
M. Artaki and I. C. Kizilyalli
Simulation of Non-Stationary Electron Transport
Using Scattering Matrices
.....................................................................157
A. Das and M. S.
Lundström
Rigid Pseudo-Ion Calculation of the Intervalley
Electron-Phonon Interaction in Silicon
.................................................161
J. M. Higman
Numerical Study of High Field Transport in SiO2
with Traps: A Coupled Monte Carlo and Rate
Equation Model
......................................................................................165
R. L. Kamocsai and W.
Porod
Transient Monte Carlo Simulation of Heterojunction
Microwave Oscillators
...........................................................................169
C. H. Lee and U. Ravaioli
Monte Carlo Simulations for
Submicron InP
Two-Terminal
Transferred Electron Devices
................................................................173
V. V.
Mitin,
M.
P. Shaw, V. M. Ivastchenko and
K. F. Wu
Monte Carlo Simulation of Low-Dimensional
Nanostructures
........................................................................................177
D. Jovanovic, S.
Briggs
and J. P. Leburton
-
QUANTUM TRANSPORT
Many-Body Effects and Density Functional Formalism
in Nanoelectronics
.................................................................................183
G. J.
latrate,
J. B.
Krieger
and Y. Li
Modeling InAs/GaSb/AlSb
Interband
Tunnel Structures
.....................189
D. Z.-Y.
Ting, E. T. Yu, D. A. Collins,
D. H. Chow, and
Т. С
McGill
їх
Quantum
Kinetic Theory of Tunneling Devices
..................................195
W. R. Frensley
Transport in Electron Waveguides: Filtering and
Bend Resistances
....................................................................................201
H. U. Baranger
Numerical Methods for the Simulation of Quantum
Devices Using the Wigner Function Approach
....................................207
С
Ringhofer
Density Matrix Coordinate Representation Numerical
Studies of Quantum Well and Barrier Devices
....................................215
T. R. Govindan, H. L. Grubin and
F. J. de Jong
A Distribution-Function Approach in the Many-Body
Quantum Transport Theory of Quantum-Based Devices
.....................219
F. A. Buot and K. L. Jensen
The Generalized Scattering Matrix Approach: An
Efficient Technique for Modeling Quantum Transport
in Relatively Large and Heavily Doped Structures
.............................223
S. Bandyopadhyay and M. Cahay
Quantum Ray Tracing: A New Approach to Quantum Transport
in Mesoscopic Systems
..........................................................................227
V. Pevzner and K. Hess
On Transport in Heterostructures within the
Independent-Particle Picture
..................................................................231
J. Zhang and W.
Pötz
Transient Response in Mesoscopic Devices
.........................................235
L. F. Register, U. Ravaioli and K. Hess
The Inclusion of Scattering in the Simulation
of Quantum Well Devices
.....................................................................239
K. L. Jensen and F. A. Buot
Numerical Study of Electronic States in a Quantum
Wire at Crossing
Heterointerfaces
........................................................243
H.
К.
Harbury and
W.
Porod
Dissipative Quantum Transport in Electron
Waveguides
....................247
M. J. McLennan, Y. Lee, R. K.
Lake,
G. Neofotistos
and S. Datta
Exchange Energy Interactions in Quantum
Well
Heterostructures
......................................................................................251
A. H.
Guerrero
Asymptotic
Structure
of the Density-Gradient
Theory of Quantum Transport
...............................................................255
M. G.
Ancona
Calculation of Transport Through Ballistic Quantum
Structures
................................................................................................259
C. S.
Lent
Numerical Study of the Higher Order Moments of
Conductance Fluctuations in Mesoscopic Structures
...........................263
M. Cahay, P. Marzolf and S. Bandyopadhyay
Author Index
.............................................................................................267
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| genre_facet | Konferenzschrift 1990 Urbana Ill. |
| id | DE-604.BV004462301 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:13:22Z |
| institution | BVB |
| isbn | 0792390881 |
| language | English |
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| physical | X, 268 S. graph. Darst. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | Kluwer Acad. Press |
| record_format | marc |
| series2 | The Kluwer international series in engineering and computer sicence : VLSI, computer architecture and digital signal processing |
| spelling | Computational electronics semiconductor transport and device simulation ed. by K. Hess ... Boston [u.a.] Kluwer Acad. Press 1991 X, 268 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier The Kluwer international series in engineering and computer sicence : VLSI, computer architecture and digital signal processing Literaturangaben Integrated circuits Computer simulation Congresses Semiconductors Computer simulation Congresses Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Simulation (DE-588)4055072-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1990 Urbana Ill. gnd-content Halbleiterbauelement (DE-588)4113826-0 s Simulation (DE-588)4055072-2 s DE-604 Hess, Karl 1945- Sonstige (DE-588)118924583 oth Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002766141&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Computational electronics semiconductor transport and device simulation Integrated circuits Computer simulation Congresses Semiconductors Computer simulation Congresses Halbleiterbauelement (DE-588)4113826-0 gnd Simulation (DE-588)4055072-2 gnd |
| subject_GND | (DE-588)4113826-0 (DE-588)4055072-2 (DE-588)1071861417 |
| title | Computational electronics semiconductor transport and device simulation |
| title_auth | Computational electronics semiconductor transport and device simulation |
| title_exact_search | Computational electronics semiconductor transport and device simulation |
| title_full | Computational electronics semiconductor transport and device simulation ed. by K. Hess ... |
| title_fullStr | Computational electronics semiconductor transport and device simulation ed. by K. Hess ... |
| title_full_unstemmed | Computational electronics semiconductor transport and device simulation ed. by K. Hess ... |
| title_short | Computational electronics |
| title_sort | computational electronics semiconductor transport and device simulation |
| title_sub | semiconductor transport and device simulation |
| topic | Integrated circuits Computer simulation Congresses Semiconductors Computer simulation Congresses Halbleiterbauelement (DE-588)4113826-0 gnd Simulation (DE-588)4055072-2 gnd |
| topic_facet | Integrated circuits Computer simulation Congresses Semiconductors Computer simulation Congresses Halbleiterbauelement Simulation Konferenzschrift 1990 Urbana Ill. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002766141&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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