Very high speed MOS devices:
Gespeichert in:
Format: | Buch |
---|---|
Sprache: | English Japanese |
Veröffentlicht: |
Oxford
Clarendon Press
1990
|
Schriftenreihe: | Very high speed digital devices
2 |
Schlagworte: | |
Beschreibung: | Literaturangaben. - Aus dem Japan. übers. |
Beschreibung: | XII, 528 S. Ill., graph. Darst. |
ISBN: | 019856340X |
Internformat
MARC
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035 | |a (OCoLC)20853093 | ||
035 | |a (DE-599)BVBBV004431209 | ||
040 | |a DE-604 |b ger |e rakddb | ||
041 | 1 | |a eng |h jpn | |
049 | |a DE-91 | ||
050 | 0 | |a TK7871.99.M44 | |
082 | 0 | |a 621.39/732 |2 20 | |
084 | |a ELT 358f |2 stub | ||
245 | 1 | 0 | |a Very high speed MOS devices |c ed. by Susumu Kohyama |
264 | 1 | |a Oxford |b Clarendon Press |c 1990 | |
300 | |a XII, 528 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
490 | 1 | |a Very high speed digital devices |v 2 | |
500 | |a Literaturangaben. - Aus dem Japan. übers. | ||
650 | 4 | |a MOS (Électronique) | |
650 | 4 | |a Metal oxide semiconductors | |
650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a MOS |0 (DE-588)4130209-6 |D s |
689 | 0 | 1 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
689 | 0 | |5 DE-604 | |
700 | 1 | |a Kohyama, Susumu |e Sonstige |4 oth | |
830 | 0 | |a Very high speed digital devices |v 2 |w (DE-604)BV004431187 |9 2 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-002748884 |
Datensatz im Suchindex
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---|---|
any_adam_object | |
building | Verbundindex |
bvnumber | BV004431209 |
callnumber-first | T - Technology |
callnumber-label | TK7871 |
callnumber-raw | TK7871.99.M44 |
callnumber-search | TK7871.99.M44 |
callnumber-sort | TK 47871.99 M44 |
callnumber-subject | TK - Electrical and Nuclear Engineering |
classification_tum | ELT 358f |
ctrlnum | (OCoLC)20853093 (DE-599)BVBBV004431209 |
dewey-full | 621.39/732 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.39/732 |
dewey-search | 621.39/732 |
dewey-sort | 3621.39 3732 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Book |
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id | DE-604.BV004431209 |
illustrated | Illustrated |
indexdate | 2024-07-09T16:12:57Z |
institution | BVB |
isbn | 019856340X |
language | English Japanese |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-002748884 |
oclc_num | 20853093 |
open_access_boolean | |
owner | DE-91 DE-BY-TUM |
owner_facet | DE-91 DE-BY-TUM |
physical | XII, 528 S. Ill., graph. Darst. |
publishDate | 1990 |
publishDateSearch | 1990 |
publishDateSort | 1990 |
publisher | Clarendon Press |
record_format | marc |
series | Very high speed digital devices |
series2 | Very high speed digital devices |
spelling | Very high speed MOS devices ed. by Susumu Kohyama Oxford Clarendon Press 1990 XII, 528 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Very high speed digital devices 2 Literaturangaben. - Aus dem Japan. übers. MOS (Électronique) Metal oxide semiconductors Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf MOS (DE-588)4130209-6 gnd rswk-swf MOS (DE-588)4130209-6 s Halbleitertechnologie (DE-588)4158814-9 s DE-604 Kohyama, Susumu Sonstige oth Very high speed digital devices 2 (DE-604)BV004431187 2 |
spellingShingle | Very high speed MOS devices Very high speed digital devices MOS (Électronique) Metal oxide semiconductors Halbleitertechnologie (DE-588)4158814-9 gnd MOS (DE-588)4130209-6 gnd |
subject_GND | (DE-588)4158814-9 (DE-588)4130209-6 |
title | Very high speed MOS devices |
title_auth | Very high speed MOS devices |
title_exact_search | Very high speed MOS devices |
title_full | Very high speed MOS devices ed. by Susumu Kohyama |
title_fullStr | Very high speed MOS devices ed. by Susumu Kohyama |
title_full_unstemmed | Very high speed MOS devices ed. by Susumu Kohyama |
title_short | Very high speed MOS devices |
title_sort | very high speed mos devices |
topic | MOS (Électronique) Metal oxide semiconductors Halbleitertechnologie (DE-588)4158814-9 gnd MOS (DE-588)4130209-6 gnd |
topic_facet | MOS (Électronique) Metal oxide semiconductors Halbleitertechnologie MOS |
volume_link | (DE-604)BV004431187 |
work_keys_str_mv | AT kohyamasusumu veryhighspeedmosdevices |