GaAs technology and its impact on circuits and systems:
Saved in:
| Format: | Book |
|---|---|
| Language: | English |
| Published: |
London
Peregrinus
1989
|
| Series: | IEE circuits and systems series
1 |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis |
| Item Description: | Literaturangaben |
| Physical Description: | XV, 457 S. Ill., graph. Darst. |
| ISBN: | 0863411878 |
Staff View
MARC
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| 245 | 1 | 0 | |a GaAs technology and its impact on circuits and systems |c ed. by D. Haigh ... |
| 264 | 1 | |a London |b Peregrinus |c 1989 | |
| 300 | |a XV, 457 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a IEE circuits and systems series |v 1 | |
| 500 | |a Literaturangaben | ||
| 650 | 4 | |a Digital integrated circuits |x Design and construction | |
| 650 | 4 | |a Gallium arsenide semiconductors | |
| 650 | 0 | 7 | |a Integrierte Schaltung |0 (DE-588)4027242-4 |2 gnd |9 rswk-swf |
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| 689 | 0 | 1 | |a Integrierte Schaltung |0 (DE-588)4027242-4 |D s |
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| 700 | 1 | |a Haigh, David G. |e Sonstige |4 oth | |
| 830 | 0 | |a IEE circuits and systems series |v 1 |w (DE-604)BV002815596 |9 1 | |
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Record in the Search Index
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| adam_text | IMAGE 1
CONTENTS
PAGE
INTRODUCTION 1
(D. G. HAIGH AND J. K. A . EVERARD) 1.1 PRESENT POSITION 1
1.2 THE PREREQUISITES FOR DESIGN 2
1.3 DESIGN 3
1.4 NEXT GENERATION TECHNOLOGIES 6
1.5 A GIANT LEAP FOR TECHNOLOGY 7
AN OVERVIEW OF PROCESSING AND TECHNOLOGY 9
(J. ARNOLD, R. W. W. CHARLTON AND J. A. TURNER) 2.1 INTRODUCTION 9
2.2 BASIC PROCESSES 18
2.2.1 INTRODUCTION 18
2.2.2 COMPONENTS AND TECHNOLOGY REQUIREMENTS 18
2.2.3 CIRCUIT BUILDING BLOCKS 19
2.2.4 COMPONENT AND TECHNOLOGY INTEGRATION 24
2.2.5 IC FABRICATION PROCESSES 24
2.3 COMMERCIAL PROCESS 29
2.3.1 HIGH YIELD GAAS M M IC PROCESS 29
2.3.2 PROCESS CONTROL 34
2.3.3 CAPABILITY APPROVAL 44
2.4 NEXT GENERATION 47
2.4.1 MULTIFUNCTION ICS WITH SELECTIVE IMPLANTATION 47
2.4.2 THE HIGH ELECTRON MOBILITY TRANSISTOR 49
2.4.3 THE HETEROJUNCTION BIPOLAR TRANSISTOR 52
2.5 APPLICATIONS 54
2.5.1 THE MARKET REQUIREMENTS 54
2.5.2 PROCESS CHARACTERISATION 55
2.5.3 DESIGN PROCEDURES FOR MMICS 61
2.5.4 STATE OF THE ART RESULTS 61
2.6 FUTURE TRENDS 64
2.6.1 MATERIALS 64
2.6.2 LITHOGRAPHY 64
2.6.3 ETCHING AND DEPOSITION 64
IMAGE 2
2.6.4 RAPID THERMAL PROCESSING 65
2.6.5 LASER PROCESSING 65
2.7 REFERENCES 65
MESFET MODELLING AND PARAMETER EXTRACTION 67
(A. K. JASTRZEBSKI) 3.1 INTRODUCTION 67
3.2 MESFET MODELS 68
3.2.1 GENERAL MESFET CIRCUIT MODEL 70
3.2.2 OVERVIEW OF SOME NON-LINEAR MESFET MODELS 73 3.2.3 LIMITATIONS OF
EXISTING MESFET CIRCUIT MODELS 76 3.3 AN IMPROVED NON-LINEAR MESFET
MODEL 79
3.3.1 DC CHARACTERISTICS 79
3.3.2 GATE-SOURCE AND GATE-DRAIN CAPACITANCES (CGS, CGD) 87
3.3.3 SCHOTTKY BARRIER DIODES (DGS, DGS) 90
3.3.4 UNDEPLETED CHANNEL RESISTANCE RI 91
3.4 NON-LINEAR MODELLING FROM MEASURED S-PARAMETERS 92
3.4.1 OPTIMISATION OF MESFET MODELS - PROBLEMS AND DIFFICULTIES 93
3.4.2 METHOD BASED ON SIMULTANEOUS OPTIMISATION AT MANY BIAS POINTS 94
3.4.3 COMPUTER ALGORITHM 95
3.5 PARAMETER EXTRACTION PROCEDURE FOR NON-LINEAR MESFET MODELS 101
3.5.1 APPROXIMATION OF MODEL PARAMETERS FROM PHYSICAL AND TECHNOLOGICAL
DATA 103
3.5.2 COLD FET MEASUREMENTS 104
3.5.3 EXTRACTION OF THE MESFET CIRCUIT MODEL FROM Y-PARAMETERS 110
3.5.4 FINAL OPTIMISATION OF NON-LINEAR MODEL 110
3.5.5 EXAMPLE OF NON-LINEAR MODELLING OF DISPERSIVE MESFET 111
3.6 CONCLUSIONS AND FUTURE DEVELOPMENT 117
3.7 REFERENCES 119
CAD TOOLS FOR GALLIUM ARSENIDE DESIGN 123
(S. J. NEWETT, D. R. S. BOYD AND K. STEPTOE) 4.1 INTRODUCTION 123
4.1.1 BACKGROUND 123
4.1.2 DESIGN CYCLE 125
4.2 MICROWAVE DESIGN METHODS AND MODELS 125
4.2.1 DE-EMBEDDING 126
4.2.2 OPTIMISATION 127
4.2.3 PASSIVE COMPONENTS 131
IMAGE 3
4.2.4 LINEAR TRANSISTOR MODEL AND DEVICE SCALING 134
4.2.5 NON-LINEAR TRANSISTOR MODELS 135
4.3 MICROWAVE DESIGN TOOLS AND TECHNIQUES 138
4.3.1 SMALL-SIGNAL AC (FREQUENCY DOMAIN) ANALYSIS 138 4.3.2 HARMONIC
BALANCE 139
4.3.3 TIME DOMAIN ANALYSIS 140
4.3.4 LAYOUT EDITORS 141
4.3.5 LAYOUT ANALYSIS AND LINMIC+ 142
4.3.6 DEVICE MODELLING 147
4.4 ANALOGUE AND DIGITAL DESIGN TOOLS 152
4.4.1 SCHEMATIC INPUT 152
4.4.2 ANALOGUE SIMULATION 156
4.4.3 DIGITAL SIMULATION 158
4.4.4 POLYGON LAYOUT 159
4.4.5 SYMBOLIC LAYOUT 160
4.4.6 LAYOUT VERIFICATION 161
4.4.7 DATA STANDARDS 162
4.6 ACKNOWLEDGEMENTS 163
4.6 REFERENCES 163
TECHNOLOGY COMPARISON : GALLIUM ARSENIDE VS SILICON 165 (P. H. SAUL) 5.1
INTRODUCTION 165
5.2 PHYSICS 165
5.3 ENGINEERING 171
5.3.1 DIGITAL CIRCUITS 171
5.3.2 ANALOGUE CIRCUITS 178
5.4 RADIATION HARDNESS 179
5.5 ECONOMICS 180
5.6 CONCLUSIONS 182
5.7 REFERENCES 182
GAAS DIGITAL CIRCUITS AND SYSTEM 185
(B. W. FLYNN, H. M. REEKIE AND J. MAVOR) 6.1 INTRODUCTION 185
6.2 GAAS DEVICES FOR DIGITAL LOGIC 187
6.2.1 THE MESFET 187
6.2.2 THE HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) 189 6.2.3 THE
HETEROJUNCTION BIPOLAR TRANSISTOR (HBT) 190 6.2.4 THE JUNCTION FIELD
EFFECT TRANSISTOR (JFET) 190
6.3 GAAS MESFET LOGIC TECHNOLOGIES 190
6.3.1 BUFFERED FET LOGIC (BFL) 190
6.3.2 SCHOTTKY DIODE FET LOGIC (SDFL) 192
6.3.3 CAPACITIVE COUPLED FET LOGIC (CCFL) AND CAPACITOR DIODE FET LOGIC
(CDFL) 192
IMAGE 4
6.3.4 DIRECT COUPLED FET LOGIC (DCFL) 193
6.3.5 PERFORMANCE OF SI AND GAAS 195
6.4 SMALL-SCALE STATIC AND DYNAMIC CIRCUITS 196
6.4.1 GENERAL CONSIDERATIONS RELEVANT TO ALL GAAS DIGITAL TECHNOLOGIES
196
6.4.2 BUFFERED FET LOGIC (BFL) 198
6.4.3 SCHOTTKY DIODE FET LOGIC (SDFL) 198
6.4.4 CAPACITOR COUPLED FET LOGIC (CCFL) 199
6.4.5 DIRECT-COUPLED FET LOGIC (DCFL) 199
6.4.6 COMPARISON BETWEEN LOGIC FAMILIES 204
6.4.7 ACHIEVEMENTS IN THE PRODUCTION OF GAAS ICS 208 6.5 SYSTEM
APPLICATIONS FOR GAAS DIGITAL ICS 210
6.6 CONCLUSIONS 212
6.7 REFERENCES 213
HIGH-SPEED ANALOG-TO-DIGITAL AND DIGITAL-TO-ANALOG CONVERSION WITH GAAS
TECHNOLOGY : PROSPECTS, TRENDS AND OBSTACLES 217
(L. E. LARSON) 7.1 INTRODUCTION 217
7.2 LIMITATIONS ON CONVERTER PERFORMANCE 218
7.2.1 FUNDAMENTAL LIMITATIONS ON A/D PERFORMANCE 218 7.2.2 FUNDAMENTAL
LIMITATION ON D/A PERFORMANCE 224 7.3 GAAS TECHNOLOGY FOR A/D AND D/A
APPLICATIONS 224
7.3.1 GAAS MESFET TECHNOLOGY 224
7.3.2 GAAS HBT TECHNOLOGY 226
7.4 A/D ARCHITECTURES FOR GAAS TECHNOLOGY 228
7.4.1 FLASH A/D DESIGN 228
7.4.2 MULTI-PASS AND INTERLEAVED A/D DESIGNS 229
7.4.3 2 - A MODULATOR A/D DESIGN 232
7.5 D/A ARCHITECTURES FOR GAAS TECHNOLOGY 233
7.6 CONCLUSIONS 235
7.7 ACKNOWLEDGEMENTS 235
7.8 REFERENCES 235
LOW I NOISE OSCILLATORS 237
(J. K. , A. EVERARD) 8.1 INTRODUCTION 237
8.2 OSCILLATOR NOISE THEORIES 238
8.2.1 THERMAL NOISE 238
8.2.2 FLICKER NOISE 247
8.3 FLICKER NOISE : MEASUREMENT AND REDUCTION 249
8.4 OSCILLATORS AND RESONATORS 251
8.4.1 INDUCTOR CAPACITOR OSCILLATORS 251
IMAGE 5
8.4.2 TRANSMISSION LINE OSCILLATORS 255
8.4.3 DIELECTRIC RESONATOR OSCILLATORS 262
8.4.4 SURFACE ACOUSTIC WAVE OSCILLATORS 265
8.5 FREQUENCY TUNING 268
8.5.1 POWER LIMITATIONS 269
8.5.2 TUNABLE TRANSMISSION LINE RESONATOR 270
8.6 CONCLUSIONS 274
8.7 ACKNOWLEDGEMENTS 276
8.8 REFERENCES 276
9 MIXER DESIGNS FOR GAAS TECHNOLOGY 281
(I. D. ROBERTSON) 9.1 INTRODUCTION 281
9.2 APPLICATIONS 281
9.3 MIXER DIODES 282
9.3.1 DIODE LARGE-SIGNAL MODELLING 282
9.3.2 COOLED OPERATION 286
9.4 BALANCED DIODE MIXERS 287
9.4.1 SINGLE-BALANCED MIXERS 288
9.4.2 DOUBLE-BALANCED MIXERS 289
9.4.3 IMAGE-REJECTION AND IMAGE-ENHANCEMENT MIXERS 291
9.5 FET MIXERS 294
9.5.1 TYPES OF FET MIXER 294
9.5.2 DEVICE LARGE-SIGNAL MODELLING 297
9.5.3 BALANCED FET MIXERS 298
9.5.4 DISTRIBUTED FET MIXERS 299
9.6 MMIC MIXERS 301
9.6.1 DIFFICULTIES IN MMIC MIXER DESIGN 302
9.6.2 CHOICE OF DEVICE 302
9.6.3 BALANCING TECHNIQUES 303
9.6.4 NOVEL CIRCUIT DESIGNS 307
9.7 FUTURE DEVELOPMENTS 308
9.8 CONCLUSIONS 310
9.9 REFERENCES 310
10 SWITCHED CAPACITOR CIRCUITS AND OPERATIONAL AMPLIFIERS 313 (D. G.
HAIGH, C. TOUMAZOU AND A. K. BETTS) 10.1 INTRODUCTION 313
10.2 SWITCHED CAPACITOR CIRCUIT ARCHITECTURES 315
10.3 GAAS DEVICES, MODELLING AND SIMULATION 318
10.3.1 DEVICES AND THE MODELLING PROBLEM 318
10.3.2 DIGITAL MODE MODEL 321
10.3.3 ANALOGUE MODE MODEL 321
10.3.4 SWITCH MODE MODEL 321
IMAGE 6
10.3.5 SIMULATION 321
10.4 SWITCHES 322
10.5 CAPACITORS 325
10.6 OPERATIONAL AMPLIFIERS 326
10.6.1 GENERAL APPROACHES 326
10.6.2 GAAS CURRENT MIRROR 327
10.6.3 CIRCUITS USING DIODE LEVEL SHIFTING 329
10.6.4 CIRCUITS USING DEVICE WIDTH RATIOING 330
10.6.5 FAST SETTLING ARCHITECTURES 333
10.6.6 DIFFERENTIAL TO SINGLE ENDED CONVERTERS 334
10.7 AMPLIFIER CHARACTERISATION 335
10.8 SC CIRCUIT OPTIMISATION 337
10.9 BIQUAD FILTER EXAMPLES 340
10.9.1 SC FILTER USING HIGH GAIN AMPLIFIERS 340
10.9.2 SC FILTER DESIGN USING FINITE GAIN INSENSITIVE SC CIRCUITS 347
10.10 CONCLUSIONS 353
10.11 ACKNOWLEDGEMENTS 354
10.12 REFERENCES 354
INTEGRATED CIRCUITS FOR OPTICAL FIBRE SYSTEMS 357
(R. P. MERRETT) 11.1 INTRODUCTION 357
11.2 SUMMARY OF CURRENT STATUS OF GAAS IC TECHNOLOGY 358
11.3 APPLICATIONS AT 1.3 AND 1.5 µM 360
11.3.1 TRANSMITTERS AND RECEIVERS 360
11.3.2 LONG HAUL (TRUNK) TRANSMISSION 368
11.3.3 LOCAL DISTRIBUTION OF HIGH BIT-RATE SERVICES 370
11.3.4 SPACE SWITCHING 372
11.3.5 BROADBAND INTEGRATED SERVICES DIGITAL NETWORKS AND LOCAL AREA
NETWORKS 372
11.4 APPLICATIONS AT 0.85 µM 373
11.5 IMPACT OF LIKELY DEVELOPMENTS IN TECHNOLOGY 374
11.6 CONCLUSIONS 376
11.7 ACKNOWLEDGEMENTS 376
11.8 REFERENCES 377
EMERGING TECHNOLOGIES 379
(J. G. SWANSON) 12.1 INTRODUCTION 379
12.2 CARRIER VELOCITY LIMITATIONS IN SEMICONDUCTORS 379
12.3 MATERIALS FOR HIGH SPEED DEVICES 382
12.3.1 LATTICE MATCHED MATERIALS 382
12.3.2 LATTICE MISMATCHED MATERIALS 384
12.4 DEVICES 385
IMAGE 7
12.4.1 THE HETEROJUNCTION BIPOLAR TRANSISTOR 385
12.4.2 FIELD-EFFECT TRANSISTORS 392
12.5 CONCLUSIONS 404
12.6 REFERENCES 405
13 DIGITAL OPTOELECTRONIC DEVICES AND SYSTEMS 407
(G. PARRY, M. WHITEHEAD AND J. E. MIDWINTER) 13.1 INTRODUCTION 407
13.1.1 THE ROLE OF GAAS 407
13.1.2 THE ROLE OF OPTICS IN DIGITAL ELECTRONIC SYSTEMS 408 13.2
INTERFACE DEVICES FOR OPTICALLY INTERCONNECTED SYSTEMS 410 13.2.1 THE
ELECTRONIC TO OPTICAL INTERFACE 411
13.2.2 THE OPTICS TO ELECTRONICS INTERFACE 418
13.3 DIGITAL OPTOELECTRONIC LOGIC DEVICES - THE S E ED FAMILY 418 13.3.1
DIODE S E E D S 419
13.3.2 TRANSISTOR S E E D S 420
13.3.3 SYMMETRIC S E E D S 422
13.4 OPTICAL INTERCONNECTION 424
13.5 SYSTEM DESIGN AND TARGET SPECIFICATION FOR A PHOTONIC SWITCH USING
OPTICAL INTERCONNECT AND GAAS TECHNOLOGY 424 13.6 CONCLUSIONS 427
13.7 ACKNOWLEDGEMENTS 427
13.8 REFERENCES 427
INDEX 431
LIST OF COLOUR PLATES
PAGE
PLATE I: GAAS M M IC 6-BIT PHASE SHIFTER I
PLATE II: A GAAS AMPLIFIER CELL SEEN IN THE PRINCESS
LAYOUT EDITOR II
PLATE III: THE GAAS AMPLIFIER OF PLATE III SEEN IN THE
M A G IC SYMBOLIC LAYOUT EDITOR III
PLATE IV: A 1 6 X 16 COMPLEX MULTIPLIER IMPLEMENTED IN
1 MICRON M O D F ET TECHNOLOGY IV
(COURTESY HONEYWELL SENSORS AND SIGNAL PROCESSING LABORATORY)
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| id | DE-604.BV002815604 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T15:49:26Z |
| institution | BVB |
| isbn | 0863411878 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001772613 |
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| owner | DE-91 DE-BY-TUM DE-706 DE-83 |
| owner_facet | DE-91 DE-BY-TUM DE-706 DE-83 |
| physical | XV, 457 S. Ill., graph. Darst. |
| publishDate | 1989 |
| publishDateSearch | 1989 |
| publishDateSort | 1989 |
| publisher | Peregrinus |
| record_format | marc |
| series | IEE circuits and systems series |
| series2 | IEE circuits and systems series |
| spelling | GaAs technology and its impact on circuits and systems ed. by D. Haigh ... London Peregrinus 1989 XV, 457 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier IEE circuits and systems series 1 Literaturangaben Digital integrated circuits Design and construction Gallium arsenide semiconductors Integrierte Schaltung (DE-588)4027242-4 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 s Integrierte Schaltung (DE-588)4027242-4 s DE-604 Haigh, David G. Sonstige oth IEE circuits and systems series 1 (DE-604)BV002815596 1 OEBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001772613&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | GaAs technology and its impact on circuits and systems IEE circuits and systems series Digital integrated circuits Design and construction Gallium arsenide semiconductors Integrierte Schaltung (DE-588)4027242-4 gnd Galliumarsenid (DE-588)4019155-2 gnd |
| subject_GND | (DE-588)4027242-4 (DE-588)4019155-2 |
| title | GaAs technology and its impact on circuits and systems |
| title_auth | GaAs technology and its impact on circuits and systems |
| title_exact_search | GaAs technology and its impact on circuits and systems |
| title_full | GaAs technology and its impact on circuits and systems ed. by D. Haigh ... |
| title_fullStr | GaAs technology and its impact on circuits and systems ed. by D. Haigh ... |
| title_full_unstemmed | GaAs technology and its impact on circuits and systems ed. by D. Haigh ... |
| title_short | GaAs technology and its impact on circuits and systems |
| title_sort | gaas technology and its impact on circuits and systems |
| topic | Digital integrated circuits Design and construction Gallium arsenide semiconductors Integrierte Schaltung (DE-588)4027242-4 gnd Galliumarsenid (DE-588)4019155-2 gnd |
| topic_facet | Digital integrated circuits Design and construction Gallium arsenide semiconductors Integrierte Schaltung Galliumarsenid |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001772613&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV002815596 |
| work_keys_str_mv | AT haighdavidg gaastechnologyanditsimpactoncircuitsandsystems |