Characterization of epitaxial semiconductor films:
Gespeichert in:
| Format: | Buch |
|---|---|
| Sprache: | English |
| Veröffentlicht: |
Amsterdam
Elsevier
1976
|
| Schriftenreihe: | Methods and phenomena
2. |
| Schlagworte: | |
| Beschreibung: | Auch als: Thin solid fibus, Vol. 31, 1/2 |
| Beschreibung: | XII, 216 Seiten Illustrationen, Diagramme |
Internformat
MARC
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| 245 | 1 | 0 | |a Characterization of epitaxial semiconductor films |c edited by Henry Kressel (RCA Laboratories, Princeton, N.J. 08540, U.S.A.) |
| 264 | 1 | |a Amsterdam |b Elsevier |c 1976 | |
| 300 | |a XII, 216 Seiten |b Illustrationen, Diagramme | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Methods and phenomena |v 2. | |
| 500 | |a Auch als: Thin solid fibus, Vol. 31, 1/2 | ||
| 650 | 4 | |a Couches minces | |
| 650 | 7 | |a Couches minces semiconductrices |2 ram | |
| 650 | 4 | |a Semiconducteurs | |
| 650 | 7 | |a Semiconducteurs |2 ram | |
| 650 | 4 | |a Épitaxie | |
| 650 | 7 | |a Épitaxie |2 ram | |
| 650 | 4 | |a Epitaxy | |
| 650 | 4 | |a Semiconductors | |
| 650 | 4 | |a Thin films | |
| 650 | 0 | 7 | |a Kristall |0 (DE-588)4033209-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Dünne Schicht |0 (DE-588)4136925-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Galliumarsenid |0 (DE-588)4019155-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Epitaxieschicht |0 (DE-588)4152546-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Kinetik |0 (DE-588)4030665-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Epitaxie |0 (DE-588)4152545-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiterschicht |0 (DE-588)4158812-5 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a Dünne Schicht |0 (DE-588)4136925-7 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Epitaxieschicht |0 (DE-588)4152546-2 |D s |
| 689 | 1 | |5 DE-604 | |
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| 689 | 3 | |5 DE-604 | |
| 689 | 4 | 0 | |a Galliumarsenid |0 (DE-588)4019155-2 |D s |
| 689 | 4 | |5 DE-604 | |
| 689 | 5 | 0 | |a Halbleiterschicht |0 (DE-588)4158812-5 |D s |
| 689 | 5 | 1 | |a Epitaxie |0 (DE-588)4152545-0 |D s |
| 689 | 5 | |8 1\p |5 DE-604 | |
| 689 | 6 | 0 | |a Halbleitertechnologie |0 (DE-588)4158814-9 |D s |
| 689 | 6 | |8 2\p |5 DE-604 | |
| 700 | 1 | |a Kressel, Henry |d 1934- |e Sonstige |0 (DE-588)109303660 |4 oth | |
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| 940 | 1 | |q TUB-nseb | |
Datensatz im Suchindex
| _version_ | 1805083233319124992 |
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| adam_text | |
| any_adam_object | |
| author_GND | (DE-588)109303660 |
| building | Verbundindex |
| bvnumber | BV002282302 |
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| callnumber-label | QC176 |
| callnumber-raw | QC176.83 |
| callnumber-search | QC176.83 |
| callnumber-sort | QC 3176.83 |
| callnumber-subject | QC - Physics |
| ctrlnum | (OCoLC)2464043 (DE-599)BVBBV002282302 |
| dewey-full | 530.4/1 537.6/22 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 530 - Physics 537 - Electricity and electronics |
| dewey-raw | 530.4/1 537.6/22 |
| dewey-search | 530.4/1 537.6/22 |
| dewey-sort | 3530.4 11 |
| dewey-tens | 530 - Physics |
| discipline | Physik |
| format | Book |
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| id | DE-604.BV002282302 |
| illustrated | Illustrated |
| indexdate | 2024-07-20T07:45:18Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001499921 |
| oclc_num | 2464043 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-83 DE-11 |
| owner_facet | DE-91 DE-BY-TUM DE-83 DE-11 |
| physical | XII, 216 Seiten Illustrationen, Diagramme |
| psigel | TUB-nseb |
| publishDate | 1976 |
| publishDateSearch | 1976 |
| publishDateSort | 1976 |
| publisher | Elsevier |
| record_format | marc |
| series | Methods and phenomena |
| series2 | Methods and phenomena |
| spelling | Characterization of epitaxial semiconductor films edited by Henry Kressel (RCA Laboratories, Princeton, N.J. 08540, U.S.A.) Amsterdam Elsevier 1976 XII, 216 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Methods and phenomena 2. Auch als: Thin solid fibus, Vol. 31, 1/2 Couches minces Couches minces semiconductrices ram Semiconducteurs Semiconducteurs ram Épitaxie Épitaxie ram Epitaxy Semiconductors Thin films Kristall (DE-588)4033209-3 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Epitaxieschicht (DE-588)4152546-2 gnd rswk-swf Kinetik (DE-588)4030665-3 gnd rswk-swf Epitaxie (DE-588)4152545-0 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf Halbleiterschicht (DE-588)4158812-5 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 s DE-604 Epitaxieschicht (DE-588)4152546-2 s Kristall (DE-588)4033209-3 s Kinetik (DE-588)4030665-3 s Galliumarsenid (DE-588)4019155-2 s Halbleiterschicht (DE-588)4158812-5 s Epitaxie (DE-588)4152545-0 s 1\p DE-604 Halbleitertechnologie (DE-588)4158814-9 s 2\p DE-604 Kressel, Henry 1934- Sonstige (DE-588)109303660 oth Methods and phenomena 2. (DE-604)BV001891551 2. 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Characterization of epitaxial semiconductor films Methods and phenomena Couches minces Couches minces semiconductrices ram Semiconducteurs Semiconducteurs ram Épitaxie Épitaxie ram Epitaxy Semiconductors Thin films Kristall (DE-588)4033209-3 gnd Dünne Schicht (DE-588)4136925-7 gnd Galliumarsenid (DE-588)4019155-2 gnd Epitaxieschicht (DE-588)4152546-2 gnd Kinetik (DE-588)4030665-3 gnd Epitaxie (DE-588)4152545-0 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Halbleiterschicht (DE-588)4158812-5 gnd |
| subject_GND | (DE-588)4033209-3 (DE-588)4136925-7 (DE-588)4019155-2 (DE-588)4152546-2 (DE-588)4030665-3 (DE-588)4152545-0 (DE-588)4158814-9 (DE-588)4158812-5 |
| title | Characterization of epitaxial semiconductor films |
| title_auth | Characterization of epitaxial semiconductor films |
| title_exact_search | Characterization of epitaxial semiconductor films |
| title_full | Characterization of epitaxial semiconductor films edited by Henry Kressel (RCA Laboratories, Princeton, N.J. 08540, U.S.A.) |
| title_fullStr | Characterization of epitaxial semiconductor films edited by Henry Kressel (RCA Laboratories, Princeton, N.J. 08540, U.S.A.) |
| title_full_unstemmed | Characterization of epitaxial semiconductor films edited by Henry Kressel (RCA Laboratories, Princeton, N.J. 08540, U.S.A.) |
| title_short | Characterization of epitaxial semiconductor films |
| title_sort | characterization of epitaxial semiconductor films |
| topic | Couches minces Couches minces semiconductrices ram Semiconducteurs Semiconducteurs ram Épitaxie Épitaxie ram Epitaxy Semiconductors Thin films Kristall (DE-588)4033209-3 gnd Dünne Schicht (DE-588)4136925-7 gnd Galliumarsenid (DE-588)4019155-2 gnd Epitaxieschicht (DE-588)4152546-2 gnd Kinetik (DE-588)4030665-3 gnd Epitaxie (DE-588)4152545-0 gnd Halbleitertechnologie (DE-588)4158814-9 gnd Halbleiterschicht (DE-588)4158812-5 gnd |
| topic_facet | Couches minces Couches minces semiconductrices Semiconducteurs Épitaxie Epitaxy Semiconductors Thin films Kristall Dünne Schicht Galliumarsenid Epitaxieschicht Kinetik Epitaxie Halbleitertechnologie Halbleiterschicht |
| volume_link | (DE-604)BV001891551 |
| work_keys_str_mv | AT kresselhenry characterizationofepitaxialsemiconductorfilms |