Deep centers in semiconductors: a state of the art approach
Saved in:
| Format: | Book |
|---|---|
| Language: | English |
| Published: |
New York u.a.
Gordon and Breach
1986
|
| Subjects: | |
| Physical Description: | XI, 777 S. graph. Darst. |
| ISBN: | 2881241093 |
Staff View
MARC
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| 245 | 1 | 0 | |a Deep centers in semiconductors |b a state of the art approach |c ed. by Sokrates T. Pantelides |
| 264 | 1 | |a New York u.a. |b Gordon and Breach |c 1986 | |
| 300 | |a XI, 777 S. |b graph. Darst. | ||
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| 650 | 4 | |a Impurity centers | |
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Record in the Search Index
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| dewey-full | 537.6/22 |
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| dewey-ones | 537 - Electricity and electronics |
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| discipline | Physik |
| format | Book |
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| id | DE-604.BV002272784 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T15:43:09Z |
| institution | BVB |
| isbn | 2881241093 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001493275 |
| oclc_num | 11785855 |
| open_access_boolean | |
| owner | DE-91G DE-BY-TUM DE-355 DE-BY-UBR |
| owner_facet | DE-91G DE-BY-TUM DE-355 DE-BY-UBR |
| physical | XI, 777 S. graph. Darst. |
| publishDate | 1986 |
| publishDateSearch | 1986 |
| publishDateSort | 1986 |
| publisher | Gordon and Breach |
| record_format | marc |
| spelling | Deep centers in semiconductors a state of the art approach ed. by Sokrates T. Pantelides New York u.a. Gordon and Breach 1986 XI, 777 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Halfgeleiders gtt Roosterfouten gtt Verontreinigingen gtt Electron donor-acceptor complexes Impurity centers Semiconductors Defects Tiefe Störstelle (DE-588)4185419-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Verunreinigung (DE-588)4188107-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Tiefe Störstelle (DE-588)4185419-6 s DE-604 Verunreinigung (DE-588)4188107-2 s Pantelides, Sokrates ca. 20./21. Jh. Sonstige (DE-588)1131264401 oth |
| spellingShingle | Deep centers in semiconductors a state of the art approach Halfgeleiders gtt Roosterfouten gtt Verontreinigingen gtt Electron donor-acceptor complexes Impurity centers Semiconductors Defects Tiefe Störstelle (DE-588)4185419-6 gnd Halbleiter (DE-588)4022993-2 gnd Verunreinigung (DE-588)4188107-2 gnd |
| subject_GND | (DE-588)4185419-6 (DE-588)4022993-2 (DE-588)4188107-2 |
| title | Deep centers in semiconductors a state of the art approach |
| title_auth | Deep centers in semiconductors a state of the art approach |
| title_exact_search | Deep centers in semiconductors a state of the art approach |
| title_full | Deep centers in semiconductors a state of the art approach ed. by Sokrates T. Pantelides |
| title_fullStr | Deep centers in semiconductors a state of the art approach ed. by Sokrates T. Pantelides |
| title_full_unstemmed | Deep centers in semiconductors a state of the art approach ed. by Sokrates T. Pantelides |
| title_short | Deep centers in semiconductors |
| title_sort | deep centers in semiconductors a state of the art approach |
| title_sub | a state of the art approach |
| topic | Halfgeleiders gtt Roosterfouten gtt Verontreinigingen gtt Electron donor-acceptor complexes Impurity centers Semiconductors Defects Tiefe Störstelle (DE-588)4185419-6 gnd Halbleiter (DE-588)4022993-2 gnd Verunreinigung (DE-588)4188107-2 gnd |
| topic_facet | Halfgeleiders Roosterfouten Verontreinigingen Electron donor-acceptor complexes Impurity centers Semiconductors Defects Tiefe Störstelle Halbleiter Verunreinigung |
| work_keys_str_mv | AT pantelidessokrates deepcentersinsemiconductorsastateoftheartapproach |