Projected range statistics in semiconductors:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | Undetermined |
| Veröffentlicht: |
Stanford
Selbstverl.
1970
|
| Schlagworte: | |
| Beschreibung: | circa 200 S. |
Internformat
MARC
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| 245 | 1 | 0 | |a Projected range statistics in semiconductors |c William S. Johnson ; James F. Gibbons* |
| 264 | 1 | |a Stanford |b Selbstverl. |c 1970 | |
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Datensatz im Suchindex
| _version_ | 1804116528159784960 |
|---|---|
| any_adam_object | |
| author | Johnson, William S. Gibbons, James F. |
| author_facet | Johnson, William S. Gibbons, James F. |
| author_role | aut aut |
| author_sort | Johnson, William S. |
| author_variant | w s j ws wsj j f g jf jfg |
| building | Verbundindex |
| bvnumber | BV002077412 |
| classification_tum | ELT 293k |
| ctrlnum | (OCoLC)631968447 (DE-599)BVBBV002077412 |
| discipline | Elektrotechnik |
| format | Book |
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| genre | (DE-588)4184303-4 Tabelle gnd-content |
| genre_facet | Tabelle |
| id | DE-604.BV002077412 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T15:39:56Z |
| institution | BVB |
| language | Undetermined |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-001359350 |
| oclc_num | 631968447 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM |
| owner_facet | DE-91 DE-BY-TUM |
| physical | circa 200 S. |
| publishDate | 1970 |
| publishDateSearch | 1970 |
| publishDateSort | 1970 |
| publisher | Selbstverl. |
| record_format | marc |
| spelling | Johnson, William S. Verfasser aut Projected range statistics in semiconductors William S. Johnson ; James F. Gibbons* Stanford Selbstverl. 1970 circa 200 S. txt rdacontent n rdamedia nc rdacarrier Eindringtiefe (DE-588)4333391-6 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Ionenimplantation (DE-588)4027606-5 gnd rswk-swf (DE-588)4184303-4 Tabelle gnd-content Halbleiter (DE-588)4022993-2 s Ionenimplantation (DE-588)4027606-5 s Eindringtiefe (DE-588)4333391-6 s DE-604 Gibbons, James F. Verfasser aut |
| spellingShingle | Johnson, William S. Gibbons, James F. Projected range statistics in semiconductors Eindringtiefe (DE-588)4333391-6 gnd Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| subject_GND | (DE-588)4333391-6 (DE-588)4022993-2 (DE-588)4027606-5 (DE-588)4184303-4 |
| title | Projected range statistics in semiconductors |
| title_auth | Projected range statistics in semiconductors |
| title_exact_search | Projected range statistics in semiconductors |
| title_full | Projected range statistics in semiconductors William S. Johnson ; James F. Gibbons* |
| title_fullStr | Projected range statistics in semiconductors William S. Johnson ; James F. Gibbons* |
| title_full_unstemmed | Projected range statistics in semiconductors William S. Johnson ; James F. Gibbons* |
| title_short | Projected range statistics in semiconductors |
| title_sort | projected range statistics in semiconductors |
| topic | Eindringtiefe (DE-588)4333391-6 gnd Halbleiter (DE-588)4022993-2 gnd Ionenimplantation (DE-588)4027606-5 gnd |
| topic_facet | Eindringtiefe Halbleiter Ionenimplantation Tabelle |
| work_keys_str_mv | AT johnsonwilliams projectedrangestatisticsinsemiconductors AT gibbonsjamesf projectedrangestatisticsinsemiconductors |