Holdings: Insulating films on semiconductors

Insulating films on semiconductors: proceedings of the Internat. Conference INFOS 85, Toulouse, France, 16 - 18 April, 1985

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Bibliographic Details
Format:	Conference Proceeding Book
Language:	English
Published:	Amsterdam [u.a.] North-Holland 1986
Subjects:	Isolierschicht Halbleiter Dünne Schicht Ladungstransfer Verbindungshalbleiter Konferenz Halbleiterphysik Silicium Konferenzschrift > 1985 > Toulouse
Item Description:	Literaturangaben
Physical Description:	X, 266 S. Ill., graph. Darst. 23 cm
ISBN:	0444878726

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MARC


LEADER	00000nam a2200000 c 4500
001	BV002051699
003	DE-604
005	20160318
007	t
008	890928s1986 ad\|\| \|\|\|\| 10\|\|\| eng d
020			\|a 0444878726 \|9 0-444-87872-6
035			\|a (OCoLC)631668619
035			\|a (DE-599)BVBBV002051699
040			\|a DE-604 \|b ger \|e rakddb
041	0		\|a eng
049			\|a DE-91 \|a DE-210
084			\|a ELT 299f \|2 stub
245	1	0	\|a Insulating films on semiconductors \|b proceedings of the Internat. Conference INFOS 85, Toulouse, France, 16 - 18 April, 1985 \|c Urheber: INFOS <1985, Toulouse> ; ed. by J. J. Simonne
264		1	\|a Amsterdam [u.a.] \|b North-Holland \|c 1986
300			\|a X, 266 S. \|b Ill., graph. Darst. \|c 23 cm
336			\|b txt \|2 rdacontent
337			\|b n \|2 rdamedia
338			\|b nc \|2 rdacarrier
500			\|a Literaturangaben
650	0	7	\|a Isolierschicht \|0 (DE-588)4147018-7 \|2 gnd \|9 rswk-swf
650	0	7	\|a Halbleiter \|0 (DE-588)4022993-2 \|2 gnd \|9 rswk-swf
650	0	7	\|a Dünne Schicht \|0 (DE-588)4136925-7 \|2 gnd \|9 rswk-swf
650	0	7	\|a Ladungstransfer \|0 (DE-588)4307016-4 \|2 gnd \|9 rswk-swf
650	0	7	\|a Verbindungshalbleiter \|0 (DE-588)4062623-4 \|2 gnd \|9 rswk-swf
650	0	7	\|a Konferenz \|0 (DE-588)4032055-8 \|2 gnd \|9 rswk-swf
650	0	7	\|a Halbleiterphysik \|0 (DE-588)4113829-6 \|2 gnd \|9 rswk-swf
650	0	7	\|a Silicium \|0 (DE-588)4077445-4 \|2 gnd \|9 rswk-swf
655		7	\|0 (DE-588)1071861417 \|a Konferenzschrift \|y 1985 \|z Toulouse \|2 gnd-content
689	0	0	\|a Halbleiter \|0 (DE-588)4022993-2 \|D s
689	0	1	\|a Isolierschicht \|0 (DE-588)4147018-7 \|D s
689	0		\|5 DE-604
689	1	0	\|a Verbindungshalbleiter \|0 (DE-588)4062623-4 \|D s
689	1		\|8 1\p \|5 DE-604
689	2	0	\|a Halbleiterphysik \|0 (DE-588)4113829-6 \|D s
689	2		\|8 2\p \|5 DE-604
689	3	0	\|a Konferenz \|0 (DE-588)4032055-8 \|D s
689	3		\|8 3\p \|5 DE-604
689	4	0	\|a Silicium \|0 (DE-588)4077445-4 \|D s
689	4		\|8 4\p \|5 DE-604
689	5	0	\|a Dünne Schicht \|0 (DE-588)4136925-7 \|D s
689	5		\|8 5\p \|5 DE-604
689	6	0	\|a Ladungstransfer \|0 (DE-588)4307016-4 \|D s
689	6		\|8 6\p \|5 DE-604
700	1		\|a Simonne, J. J. \|e Sonstige \|4 oth
711	2		\|a INFOS (Conference on Insulating Films on Semiconducturs) \|n 4 \|d 1985 \|c Toulouse \|j Sonstige \|0 (DE-588)16109672-4 \|4 oth
999			\|a oai:aleph.bib-bvb.de:BVB01-001341614
883	1		\|8 1\p \|a cgwrk \|d 20201028 \|q DE-101 \|u https://d-nb.info/provenance/plan#cgwrk
883	1		\|8 2\p \|a cgwrk \|d 20201028 \|q DE-101 \|u https://d-nb.info/provenance/plan#cgwrk
883	1		\|8 3\p \|a cgwrk \|d 20201028 \|q DE-101 \|u https://d-nb.info/provenance/plan#cgwrk
883	1		\|8 4\p \|a cgwrk \|d 20201028 \|q DE-101 \|u https://d-nb.info/provenance/plan#cgwrk
883	1		\|8 5\p \|a cgwrk \|d 20201028 \|q DE-101 \|u https://d-nb.info/provenance/plan#cgwrk
883	1		\|8 6\p \|a cgwrk \|d 20201028 \|q DE-101 \|u https://d-nb.info/provenance/plan#cgwrk

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_version_	1804116501636055040
any_adam_object
building	Verbundindex
bvnumber	BV002051699
classification_tum	ELT 299f
ctrlnum	(OCoLC)631668619 (DE-599)BVBBV002051699
discipline	Elektrotechnik
format	Conference Proceeding Book
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02773nam a2200649 c 4500</leader><controlfield tag="001">BV002051699</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20160318 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">890928s1986 ad\|\| \|\|\|\| 10\|\|\| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0444878726</subfield><subfield code="9">0-444-87872-6</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)631668619</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV002051699</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-210</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 299f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Insulating films on semiconductors</subfield><subfield code="b">proceedings of the Internat. Conference INFOS 85, Toulouse, France, 16 - 18 April, 1985</subfield><subfield code="c">Urheber: INFOS <1985, Toulouse> ; ed. by J. J. Simonne</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Amsterdam [u.a.]</subfield><subfield code="b">North-Holland</subfield><subfield code="c">1986</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">X, 266 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield><subfield code="c">23 cm</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Isolierschicht</subfield><subfield code="0">(DE-588)4147018-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Ladungstransfer</subfield><subfield code="0">(DE-588)4307016-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Verbindungshalbleiter</subfield><subfield code="0">(DE-588)4062623-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Konferenz</subfield><subfield code="0">(DE-588)4032055-8</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1985</subfield><subfield code="z">Toulouse</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Isolierschicht</subfield><subfield code="0">(DE-588)4147018-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Verbindungshalbleiter</subfield><subfield code="0">(DE-588)4062623-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="2" ind2="0"><subfield code="a">Halbleiterphysik</subfield><subfield code="0">(DE-588)4113829-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="2" ind2=" "><subfield code="8">2\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="3" ind2="0"><subfield code="a">Konferenz</subfield><subfield code="0">(DE-588)4032055-8</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="3" ind2=" "><subfield code="8">3\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="4" ind2="0"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="4" ind2=" "><subfield code="8">4\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="5" ind2="0"><subfield code="a">Dünne Schicht</subfield><subfield code="0">(DE-588)4136925-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="5" ind2=" "><subfield code="8">5\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="6" ind2="0"><subfield code="a">Ladungstransfer</subfield><subfield code="0">(DE-588)4307016-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="6" ind2=" "><subfield code="8">6\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Simonne, J. J.</subfield><subfield code="e">Sonstige</subfield><subfield code="4">oth</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">INFOS (Conference on Insulating Films on Semiconducturs)</subfield><subfield code="n">4</subfield><subfield code="d">1985</subfield><subfield code="c">Toulouse</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)16109672-4</subfield><subfield code="4">oth</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-001341614</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">2\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">3\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">4\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">5\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">6\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection>
genre	(DE-588)1071861417 Konferenzschrift 1985 Toulouse gnd-content
genre_facet	Konferenzschrift 1985 Toulouse
id	DE-604.BV002051699
illustrated	Illustrated
indexdate	2024-07-09T15:39:31Z
institution	BVB
institution_GND	(DE-588)16109672-4
isbn	0444878726
language	English
oai_aleph_id	oai:aleph.bib-bvb.de:BVB01-001341614
oclc_num	631668619
open_access_boolean
owner	DE-91 DE-BY-TUM DE-210
owner_facet	DE-91 DE-BY-TUM DE-210
physical	X, 266 S. Ill., graph. Darst. 23 cm
publishDate	1986
publishDateSearch	1986
publishDateSort	1986
publisher	North-Holland
record_format	marc
spelling	Insulating films on semiconductors proceedings of the Internat. Conference INFOS 85, Toulouse, France, 16 - 18 April, 1985 Urheber: INFOS <1985, Toulouse> ; ed. by J. J. Simonne Amsterdam [u.a.] North-Holland 1986 X, 266 S. Ill., graph. Darst. 23 cm txt rdacontent n rdamedia nc rdacarrier Literaturangaben Isolierschicht (DE-588)4147018-7 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Ladungstransfer (DE-588)4307016-4 gnd rswk-swf Verbindungshalbleiter (DE-588)4062623-4 gnd rswk-swf Konferenz (DE-588)4032055-8 gnd rswk-swf Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1985 Toulouse gnd-content Halbleiter (DE-588)4022993-2 s Isolierschicht (DE-588)4147018-7 s DE-604 Verbindungshalbleiter (DE-588)4062623-4 s 1\p DE-604 Halbleiterphysik (DE-588)4113829-6 s 2\p DE-604 Konferenz (DE-588)4032055-8 s 3\p DE-604 Silicium (DE-588)4077445-4 s 4\p DE-604 Dünne Schicht (DE-588)4136925-7 s 5\p DE-604 Ladungstransfer (DE-588)4307016-4 s 6\p DE-604 Simonne, J. J. Sonstige oth INFOS (Conference on Insulating Films on Semiconducturs) 4 1985 Toulouse Sonstige (DE-588)16109672-4 oth 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 4\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 5\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 6\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk
spellingShingle	Insulating films on semiconductors proceedings of the Internat. Conference INFOS 85, Toulouse, France, 16 - 18 April, 1985 Isolierschicht (DE-588)4147018-7 gnd Halbleiter (DE-588)4022993-2 gnd Dünne Schicht (DE-588)4136925-7 gnd Ladungstransfer (DE-588)4307016-4 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd Konferenz (DE-588)4032055-8 gnd Halbleiterphysik (DE-588)4113829-6 gnd Silicium (DE-588)4077445-4 gnd
subject_GND	(DE-588)4147018-7 (DE-588)4022993-2 (DE-588)4136925-7 (DE-588)4307016-4 (DE-588)4062623-4 (DE-588)4032055-8 (DE-588)4113829-6 (DE-588)4077445-4 (DE-588)1071861417
title	Insulating films on semiconductors proceedings of the Internat. Conference INFOS 85, Toulouse, France, 16 - 18 April, 1985
title_auth	Insulating films on semiconductors proceedings of the Internat. Conference INFOS 85, Toulouse, France, 16 - 18 April, 1985
title_exact_search	Insulating films on semiconductors proceedings of the Internat. Conference INFOS 85, Toulouse, France, 16 - 18 April, 1985
title_full	Insulating films on semiconductors proceedings of the Internat. Conference INFOS 85, Toulouse, France, 16 - 18 April, 1985 Urheber: INFOS <1985, Toulouse> ; ed. by J. J. Simonne
title_fullStr	Insulating films on semiconductors proceedings of the Internat. Conference INFOS 85, Toulouse, France, 16 - 18 April, 1985 Urheber: INFOS <1985, Toulouse> ; ed. by J. J. Simonne
title_full_unstemmed	Insulating films on semiconductors proceedings of the Internat. Conference INFOS 85, Toulouse, France, 16 - 18 April, 1985 Urheber: INFOS <1985, Toulouse> ; ed. by J. J. Simonne
title_short	Insulating films on semiconductors
title_sort	insulating films on semiconductors proceedings of the internat conference infos 85 toulouse france 16 18 april 1985
title_sub	proceedings of the Internat. Conference INFOS 85, Toulouse, France, 16 - 18 April, 1985
topic	Isolierschicht (DE-588)4147018-7 gnd Halbleiter (DE-588)4022993-2 gnd Dünne Schicht (DE-588)4136925-7 gnd Ladungstransfer (DE-588)4307016-4 gnd Verbindungshalbleiter (DE-588)4062623-4 gnd Konferenz (DE-588)4032055-8 gnd Halbleiterphysik (DE-588)4113829-6 gnd Silicium (DE-588)4077445-4 gnd
topic_facet	Isolierschicht Halbleiter Dünne Schicht Ladungstransfer Verbindungshalbleiter Konferenz Halbleiterphysik Silicium Konferenzschrift 1985 Toulouse
work_keys_str_mv	AT simonnejj insulatingfilmsonsemiconductorsproceedingsoftheinternatconferenceinfos85toulousefrance1618april1985 AT infosconferenceoninsulatingfilmsonsemiconducturstoulouse insulatingfilmsonsemiconductorsproceedingsoftheinternatconferenceinfos85toulousefrance1618april1985

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