Physics of semiconductor devices:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York [u.a.]
Wiley
1981
|
| Ausgabe: | 2. ed. |
| Schriftenreihe: | A Wiley interscience publication
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | XII, 868 S. zahlr. graph. Darst. |
| ISBN: | 047109837X 0471056618 |
Internformat
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Datensatz im Suchindex
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| adam_text | PHYSICS OF SEMICONDUCTOR DEVICES SECOND EDITION S. M. SZE BELT
LABORATORIES, INCORPORATED MURRAY HILL, NEW JERSEY A WILEY-INTERSCIENCE
PUBLICATION JOHN WILEY & SONS NEW YORK * CHICHESTER * BRISBANE * TORONTO
* SINGAPORE CONTENTS INTRODUCTION 1 PART I SEMICONDUCTOR PHYSICS 5
CHAPTER 1 PHYSICS AND PROPERTIES OF SEMICONDUCTORS* A RESUME 7 1.1
INTRODUCTION, 7 1.2 CRYSTAL STRUCTURE, 8 1.3 ENERGY BANDS, 12 ; 1.4
CARRIER CONCENTRATION AT THERMAL EQUILIBRIUM, 16 1.5 CARRIER TRANSPORT
PHENOMENA, 27 1.6 PHONON SPECTRA AND OPTICAL, THERMAL, AND HIGH-FIELD
PROPERTIES OF SEMICONDUCTORS, 38 1.7 BASIC EQUATIONS FOR SEMICONDUCTOR
DEVICE OPERATION, 50 PART II) BIPOLAR DEVICES 61 V T CHAPTER 2 P-N
JUNCTION DIODE 63 I 2.1 INTRODUCTION, 63 2.2 BASIC DEVICE TECHNOLOGY, 64
2.3 DEPLETION REGION AND DEPLETION CAPACITANCE, 74 2.4 CURRENT-VOLTAGE
CHARACTERISTICS, 84 2.5 JUNCTION BREAKDOWN, 96 2.6 TRANSIENT BEHAVIOR
AND NOISE, 108 * 2.7 TERMINAL FUNCTIONS, 112 2.8 HETEROJUNCTION, 122 ,
IX CONTENTS CHAPTER 3 BIPOLAR TRANSISTOR J 133 3.1 INTRODUCTION, 133
3.2 STATIC CHARACTERISTICS, 134 3.3 MICROWAVE TRANSISTOR, 156 3.4 POWER
TRANSISTOR, 169 3.5 SWITCHING TRANSISTOR, 175 3.6 RELATED DEVICE
STRUCTURES, 181 CHAPTER 4 THYRISTORS 190 4.1 INTRODUCTION, 190 4.2 BASIC
CHARACTERISTICS, 191 4.3 SHOCKLEY DIODE AND THREE-TERMINAL THYRISTOR,
209 4.4 RELATED POWER THYRISTORS, 222 4.5 DIAC AND TRIAC, 229 4.6
UNIJUNCTION TRANSISTOR AND TRIGGER THYRISTORS, 234 4.7 FIELD-CONTROLLED
THYRISTOR, 238 PART III UNIPOLAR DEVICES 243 CHAPTER 5
METAL-SEMICONDUCTOR CONTACTS 245 5.1 INTRODUCTION, 245 5.2 ENERGY-BAND
RELATION, 246 5.3 SCHOTTKY EFFECT, 250 5.4 CURRENT TRANSPORT PROCESSES,
254 5.5 CHARACTERIZATION OF BARRIER HEIGHT, 270 5.6 DEVIC E STRUCTURES,
297 5.7 OHMIC CONTACT, 304 CHAPTER 6 JFET AND MESFET 312 6.1
INTRODUCTION, 312 6.2 BASIC DEVICE CHARACTERISTICS, 314 6.3 GENERAL
CHARACTERISTICS, 324 6.4 MICROWAVE PERFORMANCE, 341 6.5 RELATED
FIELD-EFFECT DEVICES, 351 CHAPTER 7 MIS DIODE AND CCD 362 7.1
INTRODUCTION, 362 7.2 IDEAL MIS DIODE, 363 7.3 SI-SIO 2 MOS DIODE, 379
7.4 CHARGE-COUPLED DEVICE, 407 CONTENTS XI CHAPTER 8 MOSFET 431 8.1
INTRODUCTION, 431 8.2 BASIC DEVICE CHARACTERISTICS, 433 8.3 NONUNIFORM
DOPING AND BURIED-CHANNEL DEVICES, 456 8.4 SHORT-CHANNEL EFFECTS, 469
8.5 MOSFET STRUCTURES, 486 8.6 NONVOLATILE MEMORY DEVICES, 496 PART IV
SPECIAL MICROWAVE DEVICES 511 CHAPTER 9 TUNNEL DEVICES 513 9.1
INTRODUCTION, 513 ) 9.2 TUNNEL DIODE, 516 9.3 BACKWARD DIODE, 537 9.4
MIS TUNNEL DIODE, 540 9.5 MIS SWITCH DIODE, 549 9.6 MIM TUNNEL DIODE,
553 9.7 TUNNEL TRANSISTOR, 558 CHAPTER 10 IMPATT AND RELATED
TRANSIT-TIME DIODES 566 10.1 INTRODUCTION, 566 10.2 STATIC
CHARACTERISTICS, 568 10.3 DYNAMIC CHARACTERISTICS, 577 10.4 POWER AND
EFFICIENCY, 585 10.5 NOISE BEHAVIOR, 599 10.6 DEVICE DESIGN AND
PERFORMANCE, 604 10.7 BARITT AND DOVETT DIODES, 613 10.8 TRAPATT DIODE,
627 CHAPTER 11 TRANSFERRED-ELECTRON DEVICES 637 11.1 INTRODUCTION, 637
11.2 TRANSFERRED-ELECTRON EFFECT, 638 11.3 MODES OF OPERATION, 651 11.4
DEVICE PERFORMANCES, 667 PART V PHOTONIC DEVICES 679 CHAPTER 12 LED AND
SEMICONDUCTOR LASERS 681 12.1 INTRODUCTION, 681 12.2 RADIATIVE
TRANSITIONS, 682 XIL . CONTENTS 12.3 LIGHT-EMITTING DIODES, 689 12.4
SEMICONDUCTOR LASER PHYSICS, 704 12.5 LASER OPERATING CHARACTERISTICS,
724 CHAPTER 13/ PHOTODETECTORS 743 13.1 INTRODUCTION, 743 13.2
PHOTOCONDUCTOR, 744 13.3 PHOTODIODE, 749 13.4 AVALANCHE PHOTODIODE, 766
13.5 PHOTOTRANSISTOR, 782 CHAPTER 14 SOLAR CELLS 790 14.1 INTRODUCTION,
790 14.2 SOLAR RADIATION AND IDEAL CONVERSION EFFICIENCY, 791 14.3 P-N
JUNCTION SOLAR CELLS, 799 14.4 HETEROJUNCTION, INTERFACE, AND THIN-FILM
SOLAR CELLS, 816 14.5 OPTICAL CONCENTRATION, 830 APPENDIXES 839 A. LIST
OF SYMBOLS, 841 B. INTERNATIONAL SYSTEM OF UNITS, 844 C. UNIT PREFIXES,
845 D. GREEK ALPHABET, 846 E. PHYSICAL CONSTANTS, 847 F. LATTICE
CONSTANTS, 848 G. PROPERTIES OF IMPORTANT SEMICONDUCTORS, 849 H.
PROPERTIES OF GE, SI, AND GAAS AT 300 K, 850 I. PROPERTIES OF SIO Z AND
SI 3 N 4 AT 300 K, 851 INDEX 853
|
| any_adam_object | 1 |
| author | Sze, S. M. 1936-2023 |
| author_GND | (DE-588)133681998 |
| author_facet | Sze, S. M. 1936-2023 |
| author_role | aut |
| author_sort | Sze, S. M. 1936-2023 |
| author_variant | s m s sm sms |
| building | Verbundindex |
| bvnumber | BV001928398 |
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| classification_tum | PHY 685f ELT 300f |
| ctrlnum | (OCoLC)251894832 (DE-599)BVBBV001928398 |
| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 2. ed. |
| format | Book |
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| indexdate | 2024-08-01T16:25:07Z |
| institution | BVB |
| isbn | 047109837X 0471056618 |
| language | English |
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| physical | XII, 868 S. zahlr. graph. Darst. |
| publishDate | 1981 |
| publishDateSearch | 1981 |
| publishDateSort | 1981 |
| publisher | Wiley |
| record_format | marc |
| series2 | A Wiley interscience publication |
| spellingShingle | Sze, S. M. 1936-2023 Physics of semiconductor devices Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiterphysik (DE-588)4113829-6 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd Halbleiterschaltung (DE-588)4158811-3 gnd |
| subject_GND | (DE-588)4113826-0 (DE-588)4113829-6 (DE-588)4134738-9 (DE-588)4158811-3 |
| title | Physics of semiconductor devices |
| title_auth | Physics of semiconductor devices |
| title_exact_search | Physics of semiconductor devices |
| title_full | Physics of semiconductor devices S. M. Sze |
| title_fullStr | Physics of semiconductor devices S. M. Sze |
| title_full_unstemmed | Physics of semiconductor devices S. M. Sze |
| title_short | Physics of semiconductor devices |
| title_sort | physics of semiconductor devices |
| topic | Halbleiterbauelement (DE-588)4113826-0 gnd Halbleiterphysik (DE-588)4113829-6 gnd Physikalische Eigenschaft (DE-588)4134738-9 gnd Halbleiterschaltung (DE-588)4158811-3 gnd |
| topic_facet | Halbleiterbauelement Halbleiterphysik Physikalische Eigenschaft Halbleiterschaltung |
| url | http://www3.ub.tu-berlin.de/ihv/000313163.pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=001256782&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT szesm physicsofsemiconductordevices |
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