Epitaxie und Eigenschaften von zweidimensionalen GaInAs-Halbleiterstrukturen:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | German |
| Veröffentlicht: |
1986
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| Schlagworte: | |
| Beschreibung: | 134 S. Ill., graph. Darst. |
Internformat
MARC
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| 264 | 1 | |c 1986 | |
| 300 | |a 134 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
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| 338 | |b nc |2 rdacarrier | ||
| 502 | |a Stuttgart, Univ., Diss., 1986 | ||
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| 650 | 0 | 7 | |a Epitaxie |0 (DE-588)4152545-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Gasphasenepitaxie |0 (DE-588)4156040-1 |2 gnd |9 rswk-swf |
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Datensatz im Suchindex
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| author | Scholz, Ferdinand 1954- |
| author_GND | (DE-588)110646091X |
| author_facet | Scholz, Ferdinand 1954- |
| author_role | aut |
| author_sort | Scholz, Ferdinand 1954- |
| author_variant | f s fs |
| building | Verbundindex |
| bvnumber | BV000980371 |
| classification_tum | PHY 693d ELT 280d |
| ctrlnum | (OCoLC)52587971 (DE-599)BVBBV000980371 |
| discipline | Physik Elektrotechnik |
| format | Thesis Book |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV000980371 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T15:22:06Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-000595186 |
| oclc_num | 52587971 |
| open_access_boolean | |
| owner | DE-19 DE-BY-UBM DE-91 DE-BY-TUM DE-384 DE-703 DE-355 DE-BY-UBR DE-29T DE-83 DE-11 DE-188 |
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| physical | 134 S. Ill., graph. Darst. |
| psigel | TUB-nveb |
| publishDate | 1986 |
| publishDateSearch | 1986 |
| publishDateSort | 1986 |
| record_format | marc |
| spelling | Scholz, Ferdinand 1954- Verfasser (DE-588)110646091X aut Epitaxie und Eigenschaften von zweidimensionalen GaInAs-Halbleiterstrukturen 1986 134 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Stuttgart, Univ., Diss., 1986 Indiumarsenid (DE-588)4249718-8 gnd rswk-swf Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Epitaxie (DE-588)4152545-0 gnd rswk-swf Gasphasenepitaxie (DE-588)4156040-1 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Galliumarsenid (DE-588)4019155-2 s Indiumarsenid (DE-588)4249718-8 s Epitaxie (DE-588)4152545-0 s DE-604 Gasphasenepitaxie (DE-588)4156040-1 s |
| spellingShingle | Scholz, Ferdinand 1954- Epitaxie und Eigenschaften von zweidimensionalen GaInAs-Halbleiterstrukturen Indiumarsenid (DE-588)4249718-8 gnd Galliumarsenid (DE-588)4019155-2 gnd Epitaxie (DE-588)4152545-0 gnd Gasphasenepitaxie (DE-588)4156040-1 gnd |
| subject_GND | (DE-588)4249718-8 (DE-588)4019155-2 (DE-588)4152545-0 (DE-588)4156040-1 (DE-588)4113937-9 |
| title | Epitaxie und Eigenschaften von zweidimensionalen GaInAs-Halbleiterstrukturen |
| title_auth | Epitaxie und Eigenschaften von zweidimensionalen GaInAs-Halbleiterstrukturen |
| title_exact_search | Epitaxie und Eigenschaften von zweidimensionalen GaInAs-Halbleiterstrukturen |
| title_full | Epitaxie und Eigenschaften von zweidimensionalen GaInAs-Halbleiterstrukturen |
| title_fullStr | Epitaxie und Eigenschaften von zweidimensionalen GaInAs-Halbleiterstrukturen |
| title_full_unstemmed | Epitaxie und Eigenschaften von zweidimensionalen GaInAs-Halbleiterstrukturen |
| title_short | Epitaxie und Eigenschaften von zweidimensionalen GaInAs-Halbleiterstrukturen |
| title_sort | epitaxie und eigenschaften von zweidimensionalen gainas halbleiterstrukturen |
| topic | Indiumarsenid (DE-588)4249718-8 gnd Galliumarsenid (DE-588)4019155-2 gnd Epitaxie (DE-588)4152545-0 gnd Gasphasenepitaxie (DE-588)4156040-1 gnd |
| topic_facet | Indiumarsenid Galliumarsenid Epitaxie Gasphasenepitaxie Hochschulschrift |
| work_keys_str_mv | AT scholzferdinand epitaxieundeigenschaftenvonzweidimensionalengainashalbleiterstrukturen |