Zur Stabilität von MIS-Feldeffekttransistoren aus GaInAs vom n-Kanal Inversionstyp:
Saved in:
| Main Author: | |
|---|---|
| Format: | Thesis Book |
| Language: | German |
| Published: |
1986
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| Subjects: | |
| Physical Description: | 125 S. Ill. |
Staff View
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| author | Selders, Johannes |
| author_facet | Selders, Johannes |
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| genre_facet | Hochschulschrift |
| id | DE-604.BV000604935 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T15:16:27Z |
| institution | BVB |
| language | German |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-000376216 |
| oclc_num | 46109856 |
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| physical | 125 S. Ill. |
| psigel | TUB-nveb |
| publishDate | 1986 |
| publishDateSearch | 1986 |
| publishDateSort | 1986 |
| record_format | marc |
| spelling | Selders, Johannes Verfasser aut Zur Stabilität von MIS-Feldeffekttransistoren aus GaInAs vom n-Kanal Inversionstyp 1986 125 S. Ill. txt rdacontent n rdamedia nc rdacarrier Aachen, Techn. Hochsch., Diss., 1986 Galliumarsenid (DE-588)4019155-2 gnd rswk-swf Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd rswk-swf Indiumarsenid (DE-588)4249718-8 gnd rswk-swf MIS-FET (DE-588)4338628-3 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content MIS-FET (DE-588)4338628-3 s Galliumarsenid (DE-588)4019155-2 s Indiumarsenid (DE-588)4249718-8 s Drei-Fünf-Halbleiter (DE-588)4150649-2 s DE-604 |
| spellingShingle | Selders, Johannes Zur Stabilität von MIS-Feldeffekttransistoren aus GaInAs vom n-Kanal Inversionstyp Galliumarsenid (DE-588)4019155-2 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Indiumarsenid (DE-588)4249718-8 gnd MIS-FET (DE-588)4338628-3 gnd |
| subject_GND | (DE-588)4019155-2 (DE-588)4150649-2 (DE-588)4249718-8 (DE-588)4338628-3 (DE-588)4113937-9 |
| title | Zur Stabilität von MIS-Feldeffekttransistoren aus GaInAs vom n-Kanal Inversionstyp |
| title_auth | Zur Stabilität von MIS-Feldeffekttransistoren aus GaInAs vom n-Kanal Inversionstyp |
| title_exact_search | Zur Stabilität von MIS-Feldeffekttransistoren aus GaInAs vom n-Kanal Inversionstyp |
| title_full | Zur Stabilität von MIS-Feldeffekttransistoren aus GaInAs vom n-Kanal Inversionstyp |
| title_fullStr | Zur Stabilität von MIS-Feldeffekttransistoren aus GaInAs vom n-Kanal Inversionstyp |
| title_full_unstemmed | Zur Stabilität von MIS-Feldeffekttransistoren aus GaInAs vom n-Kanal Inversionstyp |
| title_short | Zur Stabilität von MIS-Feldeffekttransistoren aus GaInAs vom n-Kanal Inversionstyp |
| title_sort | zur stabilitat von mis feldeffekttransistoren aus gainas vom n kanal inversionstyp |
| topic | Galliumarsenid (DE-588)4019155-2 gnd Drei-Fünf-Halbleiter (DE-588)4150649-2 gnd Indiumarsenid (DE-588)4249718-8 gnd MIS-FET (DE-588)4338628-3 gnd |
| topic_facet | Galliumarsenid Drei-Fünf-Halbleiter Indiumarsenid MIS-FET Hochschulschrift |
| work_keys_str_mv | AT seldersjohannes zurstabilitatvonmisfeldeffekttransistorenausgainasvomnkanalinversionstyp |