Some aspects in lifetime prediction of power semiconductor devices:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Chemnitz
Universitätsverlag Chemnitz
2019
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | xiv, 205 Seiten Illustrationen, Diagramme 21 cm, 325 g |
| ISBN: | 9783961000968 3961000964 |
Internformat
MARC
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Datensatz im Suchindex
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|---|---|
| adam_text | CONTENTS
VII
CONTENTS
1
INTRODUCTION
............................................................................................
1
2
THEORY
OF
THE
LIFETIME
PREDICTION
.......................................................
9
2.1
HAZARD
FUNCTION
..............................................................................
9
2.2
LIFETIME
PREDICTION
PROCEDURE
......................................................
12
2.3
DEVICE
TEMPERATURE
DETERMINATION
............................................
14
2.3.1
INFRARED
RADIATION
.................................................................
19
2.3.2
PN-JUNCTION
FORWARD
VOLTAGE
.............................................
22
2.3.3
GATE
THRESHOLD
VOLTAGE
.......................................................
26
2.4
PACKAGING
AND
WEAR-OUT
FAILURES
...............................................
31
2.4.1
TRANSISTOR
OUTLINE
.................................................................
31
2.4.2
POWER
MODULE
......................................................................
34
2.4.3
PRESS-PACK
.............................................................................
37
2.5
POWER
CYCLING
TEST
......................................................................
43
2.5.1
STANDARD
DC
POWER
CYCLING
TEST
.......................................
44
2.5.2
ADVANCED
POWER
CYCLING
TEST
METHODS
............................
47
2.6
LIFETIME
MODEL
..............................................................................
50
3
THERMAL
CHARACTERIZATION
METHODOLOGY
.........................................
57
3.1
DIFFERENCE
IN
TEMPERATURE
MEASUREMENT
USING
TSEPS
..............
58
3.1.1
CHARACTERISTIC
CAUSED
DIFFERENCE
........................................
58
3.1.2
POSITION
CAUSED
DIFFERENCE
.................................................
64
3.1.3
MEASUREMENT
SETUP
..............................................................
69
3.1.4
EXPERIMENT
RESULTS
..............................................................
72
3.2
TEMPERATURE
CALCULATION
FOR
LIFETIME
ESTIMATION
........................
77
3.2.1
TEMPERATURE
CALCULATION
IN
FREQUENCY
DOMAIN
.................
78
CONTENTS
VIII
3.2.2
IMPACT
OF
THERMAL
CALCULATION
ON
LIFETIME
ESTIMATION....
88
4
POWER
CYCLING
TEST
...........................................................................
93
4.1
COMPARISON
OF
DIFFERENT
CONTROL
STRATEGIES
..............................
93
4.1.1
DESIGN
OF
EXPERIMENTS
.........................................................
94
4.1.2
TEST
RESULTS
...........................................................................
95
4.1.3
POST-TEST
ANALYSIS
................................................................
102
4.2
LINEAR
CUMULATIVE
DAMAGE
THEORY
..........................................
109
4.2.1
DESIGN
OF
EXPERIMENTS
........................................................
111
4.2.2
SINGLE
POWER
CYCLING
TESTS
...............................................
112
4.2.3
COMBINED
POWER
CYCLING
TESTS
........................................
118
5
LIFETIME
MODELS
OF
POWER
SEMICONDUCTOR
DEVICES
.....................
125
5.1
FINITE
ELEMENT
SIMULATION
..........................................................
125
5.2
HIGH
POWER
IGBT
MODULES
.........................................................
129
5.2.1
DESIGN
OF
EXPERIMENTS
FOR
SHORT
LOAD
PULSE
DURATION...
130
5.2.2
LIFETIME
MODELLING
............................................................
140
5.2.3
FAILURE
ANALYSIS
..................................................................
151
5.3
TRANSFER
MOLDED
DISCRETE
POWER
DEVICES
..................................
156
5.3.1
IMPACT
OF
DESIGN
PARAMETERS
............................................
156
5.3.2
IMPACT
OF
MOLD
COMPOUND
................................................
164
5.3.3
LIFETIME
MODELLING
............................................................
167
6
SUMMARY
AND
OUTLOOK
......................................................................
175
REFERENCES
......................................................................................................
181
A
APPENDIX
..............................................................................................
197
A.
1
MATERIAL
PROPERTIES
USED
IN
FEM-SIMULATION
...........................
197
A.2
ANALYTICAL
CALCULATION
OF
GATE
THRESHOLD
VOLTAGE
....................
199
A.3
ANALYTICAL
CALCULATION
OF
TEMPERATURE
IN
TIME
DOMAIN
..........202
A.4
POWER
CYCLING
RESULTS
OF
TEST
8
FROM
CHAPTER
5.2
...................
205
|
| adam_txt |
CONTENTS
VII
CONTENTS
1
INTRODUCTION
.
1
2
THEORY
OF
THE
LIFETIME
PREDICTION
.
9
2.1
HAZARD
FUNCTION
.
9
2.2
LIFETIME
PREDICTION
PROCEDURE
.
12
2.3
DEVICE
TEMPERATURE
DETERMINATION
.
14
2.3.1
INFRARED
RADIATION
.
19
2.3.2
PN-JUNCTION
FORWARD
VOLTAGE
.
22
2.3.3
GATE
THRESHOLD
VOLTAGE
.
26
2.4
PACKAGING
AND
WEAR-OUT
FAILURES
.
31
2.4.1
TRANSISTOR
OUTLINE
.
31
2.4.2
POWER
MODULE
.
34
2.4.3
PRESS-PACK
.
37
2.5
POWER
CYCLING
TEST
.
43
2.5.1
STANDARD
DC
POWER
CYCLING
TEST
.
44
2.5.2
ADVANCED
POWER
CYCLING
TEST
METHODS
.
47
2.6
LIFETIME
MODEL
.
50
3
THERMAL
CHARACTERIZATION
METHODOLOGY
.
57
3.1
DIFFERENCE
IN
TEMPERATURE
MEASUREMENT
USING
TSEPS
.
58
3.1.1
CHARACTERISTIC
CAUSED
DIFFERENCE
.
58
3.1.2
POSITION
CAUSED
DIFFERENCE
.
64
3.1.3
MEASUREMENT
SETUP
.
69
3.1.4
EXPERIMENT
RESULTS
.
72
3.2
TEMPERATURE
CALCULATION
FOR
LIFETIME
ESTIMATION
.
77
3.2.1
TEMPERATURE
CALCULATION
IN
FREQUENCY
DOMAIN
.
78
CONTENTS
VIII
3.2.2
IMPACT
OF
THERMAL
CALCULATION
ON
LIFETIME
ESTIMATION.
88
4
POWER
CYCLING
TEST
.
93
4.1
COMPARISON
OF
DIFFERENT
CONTROL
STRATEGIES
.
93
4.1.1
DESIGN
OF
EXPERIMENTS
.
94
4.1.2
TEST
RESULTS
.
95
4.1.3
POST-TEST
ANALYSIS
.
102
4.2
LINEAR
CUMULATIVE
DAMAGE
THEORY
.
109
4.2.1
DESIGN
OF
EXPERIMENTS
.
111
4.2.2
SINGLE
POWER
CYCLING
TESTS
.
112
4.2.3
COMBINED
POWER
CYCLING
TESTS
.
118
5
LIFETIME
MODELS
OF
POWER
SEMICONDUCTOR
DEVICES
.
125
5.1
FINITE
ELEMENT
SIMULATION
.
125
5.2
HIGH
POWER
IGBT
MODULES
.
129
5.2.1
DESIGN
OF
EXPERIMENTS
FOR
SHORT
LOAD
PULSE
DURATION.
130
5.2.2
LIFETIME
MODELLING
.
140
5.2.3
FAILURE
ANALYSIS
.
151
5.3
TRANSFER
MOLDED
DISCRETE
POWER
DEVICES
.
156
5.3.1
IMPACT
OF
DESIGN
PARAMETERS
.
156
5.3.2
IMPACT
OF
MOLD
COMPOUND
.
164
5.3.3
LIFETIME
MODELLING
.
167
6
SUMMARY
AND
OUTLOOK
.
175
REFERENCES
.
181
A
APPENDIX
.
197
A.
1
MATERIAL
PROPERTIES
USED
IN
FEM-SIMULATION
.
197
A.2
ANALYTICAL
CALCULATION
OF
GATE
THRESHOLD
VOLTAGE
.
199
A.3
ANALYTICAL
CALCULATION
OF
TEMPERATURE
IN
TIME
DOMAIN
.202
A.4
POWER
CYCLING
RESULTS
OF
TEST
8
FROM
CHAPTER
5.2
.
205 |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| author | Zeng, Guang 1989- |
| author_GND | (DE-588)1198155663 |
| author_facet | Zeng, Guang 1989- |
| author_role | aut |
| author_sort | Zeng, Guang 1989- |
| author_variant | g z gz |
| building | Verbundindex |
| bvnumber | BV046736766 |
| classification_rvk | ZN 8340 ZN 4800 |
| ctrlnum | (OCoLC)1124325498 (DE-599)DNB1196650357 |
| dewey-full | 621.381528 621.317 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381528 621.317 |
| dewey-search | 621.381528 621.317 |
| dewey-sort | 3621.381528 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV046736766 |
| illustrated | Illustrated |
| index_date | 2024-07-03T14:38:08Z |
| indexdate | 2024-07-10T08:52:25Z |
| institution | BVB |
| institution_GND | (DE-588)5032023-3 |
| isbn | 9783961000968 3961000964 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-032146747 |
| oclc_num | 1124325498 |
| open_access_boolean | |
| owner | DE-83 |
| owner_facet | DE-83 |
| physical | xiv, 205 Seiten Illustrationen, Diagramme 21 cm, 325 g |
| publishDate | 2019 |
| publishDateSearch | 2019 |
| publishDateSort | 2019 |
| publisher | Universitätsverlag Chemnitz |
| record_format | marc |
| spelling | Zeng, Guang 1989- Verfasser (DE-588)1198155663 aut Some aspects in lifetime prediction of power semiconductor devices Guang Zeng Chemnitz Universitätsverlag Chemnitz 2019 xiv, 205 Seiten Illustrationen, Diagramme 21 cm, 325 g txt rdacontent n rdamedia nc rdacarrier Dissertation Technische Universität Chemnitz 2019 Frequenzbereich (DE-588)4155398-6 gnd rswk-swf Leistungshalbleiter (DE-588)4167286-0 gnd rswk-swf IGBT (DE-588)4273802-7 gnd rswk-swf Prognosemodell (DE-588)4125215-9 gnd rswk-swf Lastwechselverhalten (DE-588)4166844-3 gnd rswk-swf Temperaturverhalten (DE-588)4457534-8 gnd rswk-swf Lebensdauer (DE-588)4034837-4 gnd rswk-swf Nutzungsdauer IGBT Lebensdauerabschätzung Halbleiter-Leistungsbauelemente Lastwechseltest thermische Charakterisierung (DE-588)4113937-9 Hochschulschrift gnd-content Leistungshalbleiter (DE-588)4167286-0 s Lebensdauer (DE-588)4034837-4 s IGBT (DE-588)4273802-7 s Lastwechselverhalten (DE-588)4166844-3 s Temperaturverhalten (DE-588)4457534-8 s Frequenzbereich (DE-588)4155398-6 s Prognosemodell (DE-588)4125215-9 s DE-604 Universitätsbibliothek (Chemnitz) (DE-588)5032023-3 pbl B:DE-101 application/pdf https://d-nb.info/1196650357/04 Inhaltsverzeichnis DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032146747&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Zeng, Guang 1989- Some aspects in lifetime prediction of power semiconductor devices Frequenzbereich (DE-588)4155398-6 gnd Leistungshalbleiter (DE-588)4167286-0 gnd IGBT (DE-588)4273802-7 gnd Prognosemodell (DE-588)4125215-9 gnd Lastwechselverhalten (DE-588)4166844-3 gnd Temperaturverhalten (DE-588)4457534-8 gnd Lebensdauer (DE-588)4034837-4 gnd |
| subject_GND | (DE-588)4155398-6 (DE-588)4167286-0 (DE-588)4273802-7 (DE-588)4125215-9 (DE-588)4166844-3 (DE-588)4457534-8 (DE-588)4034837-4 (DE-588)4113937-9 |
| title | Some aspects in lifetime prediction of power semiconductor devices |
| title_auth | Some aspects in lifetime prediction of power semiconductor devices |
| title_exact_search | Some aspects in lifetime prediction of power semiconductor devices |
| title_exact_search_txtP | Some aspects in lifetime prediction of power semiconductor devices |
| title_full | Some aspects in lifetime prediction of power semiconductor devices Guang Zeng |
| title_fullStr | Some aspects in lifetime prediction of power semiconductor devices Guang Zeng |
| title_full_unstemmed | Some aspects in lifetime prediction of power semiconductor devices Guang Zeng |
| title_short | Some aspects in lifetime prediction of power semiconductor devices |
| title_sort | some aspects in lifetime prediction of power semiconductor devices |
| topic | Frequenzbereich (DE-588)4155398-6 gnd Leistungshalbleiter (DE-588)4167286-0 gnd IGBT (DE-588)4273802-7 gnd Prognosemodell (DE-588)4125215-9 gnd Lastwechselverhalten (DE-588)4166844-3 gnd Temperaturverhalten (DE-588)4457534-8 gnd Lebensdauer (DE-588)4034837-4 gnd |
| topic_facet | Frequenzbereich Leistungshalbleiter IGBT Prognosemodell Lastwechselverhalten Temperaturverhalten Lebensdauer Hochschulschrift |
| url | https://d-nb.info/1196650357/04 http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=032146747&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT zengguang someaspectsinlifetimepredictionofpowersemiconductordevices AT universitatsbibliothekchemnitz someaspectsinlifetimepredictionofpowersemiconductordevices |
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