Semiconductor heterostructure devices:
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
New York [u.a.]
Gordon and Breach
1989
|
| Schriftenreihe: | Japanese technology reviews
8 : Electronics |
| Schlagworte: | |
| Beschreibung: | Enth.: High electron mobility transistors / by Masayuki Abe. Resnant tunneling devices / by Naoki Yokoyama |
| Beschreibung: | XII, 96 S. Ill., graph. Darst. |
| ISBN: | 288124338X |
Internformat
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| 245 | 1 | 0 | |a Semiconductor heterostructure devices |
| 264 | 1 | |a New York [u.a.] |b Gordon and Breach |c 1989 | |
| 300 | |a XII, 96 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Japanese technology reviews |v 8 : Electronics | |
| 500 | |a Enth.: High electron mobility transistors / by Masayuki Abe. Resnant tunneling devices / by Naoki Yokoyama | ||
| 650 | 4 | |a Bipolar transistors | |
| 650 | 4 | |a Field-effect transistors | |
| 650 | 0 | 7 | |a HEMT |0 (DE-588)4211873-6 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterostruktur-Bauelement |0 (DE-588)4236378-0 |2 gnd |9 rswk-swf |
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| 689 | 1 | 0 | |a Heterostruktur-Bauelement |0 (DE-588)4236378-0 |D s |
| 689 | 1 | |5 DE-604 | |
| 700 | 1 | 2 | |a Abe, Masayuki |4 aut |t High electron mobility transistors |
| 700 | 1 | 2 | |a Yokoyama, Naoki |4 aut |t Resonant tunneling devices |
| 830 | 0 | |a Japanese technology reviews |v 8 : Electronics |w (DE-604)BV001313400 |9 8 : Electronic | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-002798168 | ||
Datensatz im Suchindex
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| any_adam_object | |
| author | Abe, Masayuki Yokoyama, Naoki |
| author_facet | Abe, Masayuki Yokoyama, Naoki |
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| author_sort | Abe, Masayuki |
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| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | ZN 4850 |
| classification_tum | ELT 280f ELT 321f |
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| dewey-full | 621.3815/28 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815/28 |
| dewey-search | 621.3815/28 |
| dewey-sort | 3621.3815 228 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Book |
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| id | DE-604.BV004547494 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:14:08Z |
| institution | BVB |
| isbn | 288124338X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-002798168 |
| oclc_num | 19122735 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-898 DE-BY-UBR DE-11 |
| owner_facet | DE-91 DE-BY-TUM DE-898 DE-BY-UBR DE-11 |
| physical | XII, 96 S. Ill., graph. Darst. |
| publishDate | 1989 |
| publishDateSearch | 1989 |
| publishDateSort | 1989 |
| publisher | Gordon and Breach |
| record_format | marc |
| series | Japanese technology reviews |
| series2 | Japanese technology reviews |
| spelling | Semiconductor heterostructure devices New York [u.a.] Gordon and Breach 1989 XII, 96 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Japanese technology reviews 8 : Electronics Enth.: High electron mobility transistors / by Masayuki Abe. Resnant tunneling devices / by Naoki Yokoyama Bipolar transistors Field-effect transistors HEMT (DE-588)4211873-6 gnd rswk-swf Heterostruktur-Bauelement (DE-588)4236378-0 gnd rswk-swf HEMT (DE-588)4211873-6 s DE-604 Heterostruktur-Bauelement (DE-588)4236378-0 s Abe, Masayuki aut High electron mobility transistors Yokoyama, Naoki aut Resonant tunneling devices Japanese technology reviews 8 : Electronics (DE-604)BV001313400 8 : Electronic |
| spellingShingle | Abe, Masayuki Yokoyama, Naoki Semiconductor heterostructure devices Japanese technology reviews Bipolar transistors Field-effect transistors HEMT (DE-588)4211873-6 gnd Heterostruktur-Bauelement (DE-588)4236378-0 gnd |
| subject_GND | (DE-588)4211873-6 (DE-588)4236378-0 |
| title | Semiconductor heterostructure devices |
| title_alt | High electron mobility transistors Resonant tunneling devices |
| title_auth | Semiconductor heterostructure devices |
| title_exact_search | Semiconductor heterostructure devices |
| title_full | Semiconductor heterostructure devices |
| title_fullStr | Semiconductor heterostructure devices |
| title_full_unstemmed | Semiconductor heterostructure devices |
| title_short | Semiconductor heterostructure devices |
| title_sort | semiconductor heterostructure devices |
| topic | Bipolar transistors Field-effect transistors HEMT (DE-588)4211873-6 gnd Heterostruktur-Bauelement (DE-588)4236378-0 gnd |
| topic_facet | Bipolar transistors Field-effect transistors HEMT Heterostruktur-Bauelement |
| volume_link | (DE-604)BV001313400 |
| work_keys_str_mv | AT abemasayuki semiconductorheterostructuredevices AT yokoyamanaoki semiconductorheterostructuredevices |