Transport properties of hydrogenated amorphous silicon based thin films:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
1994
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | 190 S. Ill., graph. Darst. |
Internformat
MARC
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| 100 | 1 | |a Wang, Fuchao |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Transport properties of hydrogenated amorphous silicon based thin films |c Fuchao Wang |
| 264 | 1 | |c 1994 | |
| 300 | |a 190 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 502 | |a München, Techn. Univ., Diss., 1994 | ||
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Datensatz im Suchindex
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CONTENTS
1
INTRODUCTION
S
2
BASIC
CONCEPTS
IN
AMORPHOUS
SEMICONDUCTORS
8
2.1
ATOMIC
STRUCTURE
OF
ARSI:H
BASED
MATERIALS
.
8
2.2
ANDERSON
LOCALISATION
.
9
2.3
MOBILITY
EDGE
AND
DENSITY
OF
STATES
(DOS)
.
11
2.4
MOBILITY
GAP
AND
OPTICAL
GAP
.
13
2.5
MINIMUM
METALLIC
CONDUCTIVITY,
DIFFERENT
MODES
OF
ELECTRICAL
CONDUCTION
15
2.5.1
THERMALLY
ACTIVATED
CONDUCTIVITY
IN
EXTENDED
STATES
.
16
2.5.2
THERMALLY
ASSISTED
HOPPING
CONDUCTIVITY
IN
BAND
TAIL
STATES
.
17
2.5.3
VARIABLE
RANGE
HOPPING
CONDUCTIVITY
.
18
8
TRANSPORT
PARAMETERS
OF
AMORPHOUS
SEMICONDUCTORS
20
3.1
DIRECT
AND
INDIRECT
RECOMBINATION
.
20
3.1.1
DIRECT
RECOMBINATION
.
20
3.1.2
INDIRECT
RECOMBINATION
.
21
3.2
RECOMBINATION
CENTERS
AND
TRAP
STATES,
MULTIPLE
TRAPPING
MODEL
.
21
3.3
RECOMBINATION
LIFETIMES
R,J,
AND
RESPONSE
TIME
TR
.
23
3.4
JYEE
CARRIER
MOBILITIES
P.,H
AND
DRIFT
MOBILITIES
PT,,TH
.
24
3.5
BASIC
EQUATIONS
IN
THE
DESCRIPTION
OF
CARRIER
TRANSPORT
.
26
4
EXPERIMENTAL
METHODS
28
4.1
STEADY-STATE
PHOTOCONDUCTIVITY
AND
MOBILITY-LIFETIME
PRODUCTS
.
28
4.2
TRANSIENT
PHOTOCURRENT
AND
RESPONSE
TIME
.
30
4.2.1
CASE
A:
TRAP
FREE
.
30
4.2.2
CASE
B:
WITH
TAP
STATES
.
31
4.2.3
PRESENCE
OF
A
STRONG
DE
BIAS
LIGHT
(SMALL-SIGNAL
APPROXIMATION)
32
4.3
AMBIPOLAR
TRANSPORT
AND
AMBIPOLAR
DIFFUSION
LENGTH
.
33
4.4
THE
STEADY-STATE
PHOTOCARRIER
GRATING
TECHNIQUE
(SSPG)
.
35
4.5
EFFECT
OF
SURFACE
RECOMBINATION
.
39
4.6
EXPERIMENTAL
SETUP
.
43
5
NUMERICAL
SIMULATION
OF
TRANSPORT
PROPERTIES
IN
A-SI*.H
45
5.1
MODEL
OF
THE
DOS
STRUCTURE
.
45
5.2
OCCUPANCIES
OF
THE
GAP
STATES
IN
STEADY-STATE
.
47
5.2.1
CONDUCTION
BAND
TAIL
STATES
.
47
5.2.2
VALENCE
BAND
TAIL
STATES
.
49
5.2.3
DANGLING
BOND
STATES
.
51
5.3
SIMULATION
PROCESS
FOR
THE
STEADY
STATE
.
56
5.4
RESULTS
OF
THE
NUMERICAL
SIMULATION
.
58
5.4.1
EFFECT
OF
THE
DEFECT
DENSITY
.
58
5.4.2
EFFECT
OF
THE
FERMI-LEVEL
POSITION
.
62
'
5.4.3
EFFECT
OF
THE
GENERATION
RATE
.
66
5.4.4
EFFECT
OF
THE
TEMPERATURE
.
68
6
TRANSPORT
PROPERTIES
IN
A-SI:H
SINGLE
LAYERS
71
6.1
PREPARATION
OF
A-SI:H
SAMPLES
.
71
6.2
DETERMINATION
OF
THE
SUBGAP
ABSORPTION
AND
THE
DEFECT
DENSITY
BY
THE
CPM
METHOD
.
.
.
.
71
6.2.1
ABSORPTION
COEFFICIENT
AND
CONSTANT
PHOTOCURRENT
.
72
6.2.2
CPM
SPECTRA
AND
THE
DOS
STRUCTURE
.
73
6.2.3
DETERMINATION
OF
E
M
AND
NT
.
76
6.2.4
EXPERIMENTAL
SETUP
OF
THE
CPM
MEASUREMENT
.
76
6.3
LIGHT
DEGRADATION
OF
PR-PRODUCTS
AND
TR
.
77
6.3.1
STAEBLER-WRONSKI
EFFECT
.
77
6.3.2
METASTABLE
DEFECT
DENSITY
.
79
6.3.3
AMBIPOLAR
DIFFUSION
LENGTH
AND
PHOTOCONDUCTIVITY
.
80
6.3.4
LIGHT
DEGRADATION
OF
TR
AND
NTJI
.
81
6.4
ASYMMETRIC
HIGH
TEMPERATURE
ANNEALING
BEHAVIOR
OF
PR-PRODUCTS
.
.
84
6.4.1
OPTICAL
PROPERTIES
AFTER
HIGH
TEMPERATURE
ANNEALING
.
84
6.4.2
NT
AND
E
M
AFTER
ANNEALING
.
85
6.4.3
MOBILITY
GAP
AND
ACTIVATION
ENERGY
.
87
6.4.4
EFFECT
OF
THE
HIGH
TEMPERATURE
ANNEALING
ON
APE
AND
LYY
.
.
89
6.5
ANALYTICAL
MODEL
FOR
THE
ASYMMETRIC
NT
DEPENDENCE
OF
PR-PRODUCTS
.
91
6.5.1
DIFFERENT
RECOMBINATION
PATHS
.
91
6.5.2
ASYMMETRIC
DEPENDENCE
OF
(PR),
AND
(PR)/,
ON
NT
.
93
6.5.3
FURTHER
REMARKS
.
94
6.6
EFFECT
OF
THE
FERMI-LEVEL
POSITION
ON
PR-PRODUCTS
.
96
6.6.1
STABILITY
OF
THE
TFT
CHARACTERISTICS
.
97
6.6.2
PHOTOCONDUCTIVITY
AND
AMBIPOLAR
DIFFUSION
LENGTH
.
98
6.6.3
BAND
BENDING
AND
THE
FERMI
LEVEL
DEPENDENCE
.
99
6.6.4
EFFECT
OF
INTERFACE
RECOMBINATION
ON
THE
SSPG
MEASUREMENT
.
.
103
6.7
EFFECT
OF
THE
GENERATION
RATE
ON
PR
PRODUCTS
AND
TR
.
104
6.7.1
SUBLINEAR
DEPENDENCE
OF
PHOTOCONDUCTIVITY
.
104
6.7.2
EFFECT
OF
THE
GENERATION
RATE
ON
(PR)*
.
.
.
107
6.7.3
EFFECT
OF
THE
GENERATION
RATE
ON
TR
AND
P*,*
.
110
7
TRANSPORT
PROPERTIES
OF
A-SII_YYC
S
:H
AND
PO-SI:H
THIN
FILINS
113
7.1
INTRODUCTION
TO
A-SII-.C.-.H
THIN
FILMS
.
113
7.2
A-SII-.C
S
:H
SAMPLES
AND
EXPERIMENTAL
DETAILS
.
113
7.3
RESULTS
AND
DISCUSSION
IN
ARSII~,C
R
:H
.
114
7.3.1
OPTICAL
PROPERTIES
.
114
7.3.2
DEFECT
DENSITY
AND
URBACH
ENERGY
.
114
7.3.3
TRANSPORT
PROPERTIES
.
115
7.3.4
TR
AND
PT,
IN
A-SII_
Z
C
S
:H
.
119
7.4
INTRODUCTION
TO
PC-SI:H
THIN
FILMS
.
119
7.5
PREPARATION
OF
PO-SI:H
SAMPLES
.
121
7.6
RESULTS
AND
DISCUSSION
IN
PC-SI:H
.
121
7.6.1
STRUCTURAL
CHARACTERISATION
.
121
7.6.2
ACTIVATION
ENERGY
AND
DARK
CONDUCTIVITY
.
122
7.6.3
CPM
SPECTRA
IN
PC-SI:H
.
125
7.6.4
PR-PRODUCTS
IN
PC-SI:H
.
128
7.6.5
RESPONSE
TIME
TR
IN
PC-SI:H
.
130
8
TRANSPORT
PROPERTIES
OF
A-SI:H/A-SII_
C
C
S
:H
MULTILAYERS
134
8.1
INTRODUCTION
TO
AMORPHOUS
MULTILAYERS
.
134
8.2
PREPARATION
OF
ARSI:H/A-SII_YYC
S
:H
MULTILAYERS
.
135
8.3
DETERMINATION
OF
THE
INTERFACE
DEFECT
DENSITY
BY
THE
CPM
METHOD
.
.
135
8.3.1
MEASURED
CPM
SPECTRA
OF
THE
MULTILAYER
SERIES
A
.
136
8.3.2
MATHEMATICAL
TREATMENT
OF
CPM
SPECTRA
IN
MULTILAYERS
.
139
8.3.3
EVALUATION
OF
I
AND
NA
FROM
THE
CPM
SPECTRA
.
143
8.4
EFFECT
OF
THE
BARRIER
BAND
GAP
.
144
8.4.1
SAMPLES
OF
THE
MULTILAYER
SERIES
B
.
144
8.4.2
OPTICAL
MEASUREMENTS
.
144
8.4.3
THE
INTERFACE
DEFECT
DENSITY
.
144
8.4.4
TRANSPORT
PROPERTIES
IN
SERIES
B
.
146
8.4.5
PHOTOLUMINESCENCE
.
147
8.4.6
UNDERLYING
MECHANISMS
.
148
8.4.7
TUNNELLING
MECHANISM
.
150
8.5
EFFECT
OF
THE
BARRIER
WIDTH
.
155
8.5.1
DESCRIPTION
OF
THE
MULTILAYER
SERIES
C
.
155
8.5.2
OPTICAL
MEASUREMENTS
.
155
8.5.3
THE
INTERFACE
DEFECT
DENSITY
.
155
8.5.4
DEPENDENCE
OF
THE
PR-PRODUCTS
ON
DT
.
158
8.6
ASYMMETRIC
EFFECT
OF
THE
WELL
WIDTH
.
159
8.6.1
SAMPLE
DESCRIPTION
OF
THE
MULTILAYER
SERIES
D
.
.
159
8.6.2
OPTICAL
MEASUREMENTS
.
160
8.6.3
THE
INTERFACE
DEFECT
DENSITY
.
161
8.6.4
TRANSPORT
PROPERTIES
.
161
9
TRANSIENT
BEHAVIOUR
OF
PHOTOCARRIER
GRATING
166
9.1
OPTICALLY
DETECTED
TRANSIENT
PHOTOCARRIER
GRATING
TECHNIQUE
(ODTG)
166
9.2
ELECTRICALLY
DETECTED
TRANSIENT
PHOTOCARRIER
GRATING
(EDTG)
.
168
9.2.1
CASE
A:
TRAP
FYEE
MATERIAL
.
170
9.2.2
CASE
B:
WITH
TRAP
STATES
.172
10
SUMMARY
176
11
BIBLIOGRAPHY
170
12
ACKNOWLEDGEMENTS
190 |
| any_adam_object | 1 |
| author | Wang, Fuchao |
| author_facet | Wang, Fuchao |
| author_role | aut |
| author_sort | Wang, Fuchao |
| author_variant | f w fw |
| building | Verbundindex |
| bvnumber | BV009634569 |
| classification_tum | PHY 690d PHY 701d PHY 688d |
| ctrlnum | (OCoLC)214833407 (DE-599)BVBBV009634569 |
| discipline | Physik |
| format | Thesis Book |
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| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV009634569 |
| illustrated | Illustrated |
| indexdate | 2024-08-16T00:45:02Z |
| institution | BVB |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006367107 |
| oclc_num | 214833407 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-29T DE-12 DE-706 DE-11 DE-188 |
| owner_facet | DE-91 DE-BY-TUM DE-29T DE-12 DE-706 DE-11 DE-188 |
| physical | 190 S. Ill., graph. Darst. |
| publishDate | 1994 |
| publishDateSearch | 1994 |
| publishDateSort | 1994 |
| record_format | marc |
| spelling | Wang, Fuchao Verfasser aut Transport properties of hydrogenated amorphous silicon based thin films Fuchao Wang 1994 190 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier München, Techn. Univ., Diss., 1994 Amorpher Zustand (DE-588)4306087-0 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Elektronischer Transport (DE-588)4210733-7 gnd rswk-swf Dünne Schicht (DE-588)4136925-7 gnd rswk-swf Wasserstoff (DE-588)4064784-5 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Silicium (DE-588)4077445-4 s Amorpher Zustand (DE-588)4306087-0 s Wasserstoff (DE-588)4064784-5 s Dünne Schicht (DE-588)4136925-7 s Elektronischer Transport (DE-588)4210733-7 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006367107&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Wang, Fuchao Transport properties of hydrogenated amorphous silicon based thin films Amorpher Zustand (DE-588)4306087-0 gnd Silicium (DE-588)4077445-4 gnd Elektronischer Transport (DE-588)4210733-7 gnd Dünne Schicht (DE-588)4136925-7 gnd Wasserstoff (DE-588)4064784-5 gnd |
| subject_GND | (DE-588)4306087-0 (DE-588)4077445-4 (DE-588)4210733-7 (DE-588)4136925-7 (DE-588)4064784-5 (DE-588)4113937-9 |
| title | Transport properties of hydrogenated amorphous silicon based thin films |
| title_auth | Transport properties of hydrogenated amorphous silicon based thin films |
| title_exact_search | Transport properties of hydrogenated amorphous silicon based thin films |
| title_full | Transport properties of hydrogenated amorphous silicon based thin films Fuchao Wang |
| title_fullStr | Transport properties of hydrogenated amorphous silicon based thin films Fuchao Wang |
| title_full_unstemmed | Transport properties of hydrogenated amorphous silicon based thin films Fuchao Wang |
| title_short | Transport properties of hydrogenated amorphous silicon based thin films |
| title_sort | transport properties of hydrogenated amorphous silicon based thin films |
| topic | Amorpher Zustand (DE-588)4306087-0 gnd Silicium (DE-588)4077445-4 gnd Elektronischer Transport (DE-588)4210733-7 gnd Dünne Schicht (DE-588)4136925-7 gnd Wasserstoff (DE-588)4064784-5 gnd |
| topic_facet | Amorpher Zustand Silicium Elektronischer Transport Dünne Schicht Wasserstoff Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006367107&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT wangfuchao transportpropertiesofhydrogenatedamorphoussiliconbasedthinfilms |