Negative differential resistance and instabilities in 2-D semiconductors: proceedings of a NATO Advanced Research Workshop on Negative Differential Resistance and Instabilities in 2-D Semiconductors, held September 20 - 25 , 1992, in Il Ciocco, Lucca, Italy
Gespeichert in:
| Weitere Verfasser: | , , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1993
|
| Schriftenreihe: | NATO ASI Series, Series B: Physics
307 |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Beschreibung: | Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment |
| Beschreibung: | 1 Online-Ressource (454p) |
| ISBN: | 9781461528227 9781461362203 |
| DOI: | 10.1007/978-1-4615-2822-7 |
Internformat
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| 500 | |a Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment | ||
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| spelling | Balkan, N. edt Negative differential resistance and instabilities in 2-D semiconductors proceedings of a NATO Advanced Research Workshop on Negative Differential Resistance and Instabilities in 2-D Semiconductors, held September 20 - 25 , 1992, in Il Ciocco, Lucca, Italy edited by N. Balkan, B. K. Ridley, A. J. Vickers Boston, MA Springer US 1993 1 Online-Ressource (454p) txt rdacontent c rdamedia cr rdacarrier NATO ASI Series, Series B: Physics 307 Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment Engineering Crystallography Computer engineering Optical materials Electrical Engineering Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Optical and Electronic Materials Ingenieurwissenschaften Elektronengas (DE-588)4151870-6 gnd rswk-swf Transportprozess (DE-588)4185932-7 gnd rswk-swf Heißes Elektron (DE-588)4159455-1 gnd rswk-swf Transporttheorie (DE-588)4185936-4 gnd rswk-swf Dimension 2 (DE-588)4321721-7 gnd rswk-swf 1\p (DE-588)1071861417 Konferenzschrift 1992 Barga- Il Ciocco gnd-content Elektronengas (DE-588)4151870-6 s Dimension 2 (DE-588)4321721-7 s Transportprozess (DE-588)4185932-7 s 2\p DE-604 Heißes Elektron (DE-588)4159455-1 s Transporttheorie (DE-588)4185936-4 s 3\p DE-604 Ridley, B. K. 1931-2024 (DE-588)172331641 edt Vickers, A. J. edt Erscheint auch als Druck-Ausgabe 0-306-44490-9 https://doi.org/10.1007/978-1-4615-2822-7 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 2\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk 3\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Negative differential resistance and instabilities in 2-D semiconductors proceedings of a NATO Advanced Research Workshop on Negative Differential Resistance and Instabilities in 2-D Semiconductors, held September 20 - 25 , 1992, in Il Ciocco, Lucca, Italy Engineering Crystallography Computer engineering Optical materials Electrical Engineering Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Optical and Electronic Materials Ingenieurwissenschaften Elektronengas (DE-588)4151870-6 gnd Transportprozess (DE-588)4185932-7 gnd Heißes Elektron (DE-588)4159455-1 gnd Transporttheorie (DE-588)4185936-4 gnd Dimension 2 (DE-588)4321721-7 gnd |
| subject_GND | (DE-588)4151870-6 (DE-588)4185932-7 (DE-588)4159455-1 (DE-588)4185936-4 (DE-588)4321721-7 (DE-588)1071861417 |
| title | Negative differential resistance and instabilities in 2-D semiconductors proceedings of a NATO Advanced Research Workshop on Negative Differential Resistance and Instabilities in 2-D Semiconductors, held September 20 - 25 , 1992, in Il Ciocco, Lucca, Italy |
| title_auth | Negative differential resistance and instabilities in 2-D semiconductors proceedings of a NATO Advanced Research Workshop on Negative Differential Resistance and Instabilities in 2-D Semiconductors, held September 20 - 25 , 1992, in Il Ciocco, Lucca, Italy |
| title_exact_search | Negative differential resistance and instabilities in 2-D semiconductors proceedings of a NATO Advanced Research Workshop on Negative Differential Resistance and Instabilities in 2-D Semiconductors, held September 20 - 25 , 1992, in Il Ciocco, Lucca, Italy |
| title_full | Negative differential resistance and instabilities in 2-D semiconductors proceedings of a NATO Advanced Research Workshop on Negative Differential Resistance and Instabilities in 2-D Semiconductors, held September 20 - 25 , 1992, in Il Ciocco, Lucca, Italy edited by N. Balkan, B. K. Ridley, A. J. Vickers |
| title_fullStr | Negative differential resistance and instabilities in 2-D semiconductors proceedings of a NATO Advanced Research Workshop on Negative Differential Resistance and Instabilities in 2-D Semiconductors, held September 20 - 25 , 1992, in Il Ciocco, Lucca, Italy edited by N. Balkan, B. K. Ridley, A. J. Vickers |
| title_full_unstemmed | Negative differential resistance and instabilities in 2-D semiconductors proceedings of a NATO Advanced Research Workshop on Negative Differential Resistance and Instabilities in 2-D Semiconductors, held September 20 - 25 , 1992, in Il Ciocco, Lucca, Italy edited by N. Balkan, B. K. Ridley, A. J. Vickers |
| title_short | Negative differential resistance and instabilities in 2-D semiconductors |
| title_sort | negative differential resistance and instabilities in 2 d semiconductors proceedings of a nato advanced research workshop on negative differential resistance and instabilities in 2 d semiconductors held september 20 25 1992 in il ciocco lucca italy |
| title_sub | proceedings of a NATO Advanced Research Workshop on Negative Differential Resistance and Instabilities in 2-D Semiconductors, held September 20 - 25 , 1992, in Il Ciocco, Lucca, Italy |
| topic | Engineering Crystallography Computer engineering Optical materials Electrical Engineering Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Optical and Electronic Materials Ingenieurwissenschaften Elektronengas (DE-588)4151870-6 gnd Transportprozess (DE-588)4185932-7 gnd Heißes Elektron (DE-588)4159455-1 gnd Transporttheorie (DE-588)4185936-4 gnd Dimension 2 (DE-588)4321721-7 gnd |
| topic_facet | Engineering Crystallography Computer engineering Optical materials Electrical Engineering Solid State Physics Spectroscopy and Microscopy Condensed Matter Physics Optical and Electronic Materials Ingenieurwissenschaften Elektronengas Transportprozess Heißes Elektron Transporttheorie Dimension 2 Konferenzschrift 1992 Barga- Il Ciocco |
| url | https://doi.org/10.1007/978-1-4615-2822-7 |
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