Wide-band-gap semiconductors: proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992
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| Körperschaft: | |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Amsterdam
North-Holland
1993
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| Schlagworte: | |
| Online-Zugang: | FAW01 Volltext |
| Beschreibung: | "Reprinted from Physica B volume 185." Includes bibliographical references and indexes Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics. These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field. This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic |
| Beschreibung: | 1 Online-Ressource (xvii, 616 pages) |
| ISBN: | 0444599177 0444815732 9780444599179 9780444815736 |
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| spelling | Trieste ICTP-IUPAP Semiconductor Symposium < 1992> Verfasser aut Wide-band-gap semiconductors proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992 editor, Chris G. Van de Walle Amsterdam North-Holland 1993 1 Online-Ressource (xvii, 616 pages) txt rdacontent c rdamedia cr rdacarrier "Reprinted from Physica B volume 185." Includes bibliographical references and indexes Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics. These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field. This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic Conference proceedings fast Triest (1992) swd SCIENCE / Physics / Electricity bisacsh Wide gap semiconductors fast Kongreß swd Wide-gap-Halbleiter swd Wide gap semiconductors Congresses Wide-bandgap Halbleiter (DE-588)4273153-7 gnd rswk-swf (DE-588)1071861417 Konferenzschrift gnd-content Wide-bandgap Halbleiter (DE-588)4273153-7 s 1\p DE-604 Van de Walle, Chris Gilbert Sonstige oth http://www.sciencedirect.com/science/book/9780444815736 Verlag Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Wide-band-gap semiconductors proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992 Conference proceedings fast Triest (1992) swd SCIENCE / Physics / Electricity bisacsh Wide gap semiconductors fast Kongreß swd Wide-gap-Halbleiter swd Wide gap semiconductors Congresses Wide-bandgap Halbleiter (DE-588)4273153-7 gnd |
| subject_GND | (DE-588)4273153-7 (DE-588)1071861417 |
| title | Wide-band-gap semiconductors proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992 |
| title_auth | Wide-band-gap semiconductors proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992 |
| title_exact_search | Wide-band-gap semiconductors proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992 |
| title_full | Wide-band-gap semiconductors proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992 editor, Chris G. Van de Walle |
| title_fullStr | Wide-band-gap semiconductors proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992 editor, Chris G. Van de Walle |
| title_full_unstemmed | Wide-band-gap semiconductors proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992 editor, Chris G. Van de Walle |
| title_short | Wide-band-gap semiconductors |
| title_sort | wide band gap semiconductors proceedings of the seventh trieste ictp iupap semiconductor symposium international centre for theoretical physics trieste italy 8 12 june 1992 |
| title_sub | proceedings of the Seventh Trieste ICTP-IUPAP Semiconductor Symposium, International Centre for Theoretical Physics, Trieste, Italy, 8-12 June 1992 |
| topic | Conference proceedings fast Triest (1992) swd SCIENCE / Physics / Electricity bisacsh Wide gap semiconductors fast Kongreß swd Wide-gap-Halbleiter swd Wide gap semiconductors Congresses Wide-bandgap Halbleiter (DE-588)4273153-7 gnd |
| topic_facet | Conference proceedings Triest (1992) SCIENCE / Physics / Electricity Wide gap semiconductors Kongreß Wide-gap-Halbleiter Wide gap semiconductors Congresses Wide-bandgap Halbleiter Konferenzschrift |
| url | http://www.sciencedirect.com/science/book/9780444815736 |
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