Nonvolatile resistive switching in BiFeO 3 thin films:
Gespeichert in:
1. Verfasser: | |
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Format: | Abschlussarbeit Buch |
Sprache: | English |
Veröffentlicht: |
2013
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Schlagworte: | |
Beschreibung: | VII, 86 S. Ill., graph. Darst. |
Internformat
MARC
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245 | 1 | 0 | |a Nonvolatile resistive switching in BiFeO 3 thin films |c vorgelegt von Yao Shuai |
264 | 1 | |c 2013 | |
300 | |a VII, 86 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
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338 | |b nc |2 rdacarrier | ||
502 | |a Dresden, Techn. Univ., Diss., 2013 | ||
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Datensatz im Suchindex
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any_adam_object | |
author | Shuai, Yao 1983- |
author_GND | (DE-588)103116121X |
author_facet | Shuai, Yao 1983- |
author_role | aut |
author_sort | Shuai, Yao 1983- |
author_variant | y s ys |
building | Verbundindex |
bvnumber | BV040789698 |
classification_rvk | UP 6300 UP 7750 |
ctrlnum | (OCoLC)856793155 (DE-599)BSZ378106112 |
discipline | Physik |
format | Thesis Book |
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genre_facet | Hochschulschrift |
id | DE-604.BV040789698 |
illustrated | Illustrated |
indexdate | 2024-07-10T00:33:53Z |
institution | BVB |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025767870 |
oclc_num | 856793155 |
open_access_boolean | |
owner | DE-188 DE-384 |
owner_facet | DE-188 DE-384 |
physical | VII, 86 S. Ill., graph. Darst. |
publishDate | 2013 |
publishDateSearch | 2013 |
publishDateSort | 2013 |
record_format | marc |
spelling | Shuai, Yao 1983- Verfasser (DE-588)103116121X aut Nonvolatile resistive switching in BiFeO 3 thin films vorgelegt von Yao Shuai 2013 VII, 86 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Dresden, Techn. Univ., Diss., 2013 Widerstand Elektrotechnik (DE-588)4128466-5 gnd rswk-swf Nichtflüchtiger Speicher (DE-588)4728810-3 gnd rswk-swf Ferromagnetische Schicht (DE-588)4291507-7 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Ferromagnetische Schicht (DE-588)4291507-7 s Widerstand Elektrotechnik (DE-588)4128466-5 s Nichtflüchtiger Speicher (DE-588)4728810-3 s DE-604 |
spellingShingle | Shuai, Yao 1983- Nonvolatile resistive switching in BiFeO 3 thin films Widerstand Elektrotechnik (DE-588)4128466-5 gnd Nichtflüchtiger Speicher (DE-588)4728810-3 gnd Ferromagnetische Schicht (DE-588)4291507-7 gnd |
subject_GND | (DE-588)4128466-5 (DE-588)4728810-3 (DE-588)4291507-7 (DE-588)4113937-9 |
title | Nonvolatile resistive switching in BiFeO 3 thin films |
title_auth | Nonvolatile resistive switching in BiFeO 3 thin films |
title_exact_search | Nonvolatile resistive switching in BiFeO 3 thin films |
title_full | Nonvolatile resistive switching in BiFeO 3 thin films vorgelegt von Yao Shuai |
title_fullStr | Nonvolatile resistive switching in BiFeO 3 thin films vorgelegt von Yao Shuai |
title_full_unstemmed | Nonvolatile resistive switching in BiFeO 3 thin films vorgelegt von Yao Shuai |
title_short | Nonvolatile resistive switching in BiFeO 3 thin films |
title_sort | nonvolatile resistive switching in bifeo 3 thin films |
topic | Widerstand Elektrotechnik (DE-588)4128466-5 gnd Nichtflüchtiger Speicher (DE-588)4728810-3 gnd Ferromagnetische Schicht (DE-588)4291507-7 gnd |
topic_facet | Widerstand Elektrotechnik Nichtflüchtiger Speicher Ferromagnetische Schicht Hochschulschrift |
work_keys_str_mv | AT shuaiyao nonvolatileresistiveswitchinginbifeo3thinfilms |