Epitaxial heterostructures: symposium held April 16 - 19, 1990, San Francisco, California, USA
Gespeichert in:
| Weitere Verfasser: | |
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| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Pittsburgh, Pa.
Materials Research Soc.
1990
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| Schriftenreihe: | Materials Research Society: Materials Research Society symposia proceedings
198 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIII, 631 S. graph. Darst. |
| ISBN: | 1558990879 |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV010041750 | ||
| 003 | DE-604 | ||
| 005 | 20221130 | ||
| 007 | t | ||
| 008 | 950214s1990 d||| |||| 10||| eng d | ||
| 020 | |a 1558990879 |9 1-55899-087-9 | ||
| 035 | |a (OCoLC)22207468 | ||
| 035 | |a (DE-599)BVBBV010041750 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-29T |a DE-91G |a DE-83 |a DE-11 |a DE-355 | ||
| 050 | 0 | |a TK7871.85 | |
| 082 | 0 | |a 621.381/52 |2 20 | |
| 084 | |a UP 7550 |0 (DE-625)146434: |2 rvk | ||
| 084 | |a UP 7590 |0 (DE-625)146438: |2 rvk | ||
| 084 | |a UQ 1100 |0 (DE-625)146473: |2 rvk | ||
| 084 | |a UQ 2200 |0 (DE-625)146489: |2 rvk | ||
| 084 | |a ELT 280f |2 stub | ||
| 100 | 1 | |a Shaw, Don W. |4 edt | |
| 245 | 1 | 0 | |a Epitaxial heterostructures |b symposium held April 16 - 19, 1990, San Francisco, California, USA |c eds.: Don W. Shaw ... |
| 264 | 1 | |a Pittsburgh, Pa. |b Materials Research Soc. |c 1990 | |
| 300 | |a XIII, 631 S. |b graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Materials Research Society: Materials Research Society symposia proceedings |v 198 | |
| 650 | 4 | |a Epitaxy |v Congresses | |
| 650 | 4 | |a Heterostructures |v Congresses | |
| 650 | 0 | 7 | |a Epitaxie |0 (DE-588)4152545-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heterostruktur |0 (DE-588)4123378-5 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1990 |z San Francisco Calif. |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 689 | 1 | 0 | |a Epitaxie |0 (DE-588)4152545-0 |D s |
| 689 | 1 | 1 | |a Heterostruktur |0 (DE-588)4123378-5 |D s |
| 689 | 1 | |5 DE-604 | |
| 711 | 2 | |a Symposium on Epitaxial Heterostructures |d 1990 |c San Francisco, Calif. |j Sonstige |0 (DE-588)5055295-8 |4 oth | |
| 830 | 0 | |a Materials Research Society: Materials Research Society symposia proceedings |v 198 |w (DE-604)BV001899105 |9 198 | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006659560&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-006659560 | ||
Datensatz im Suchindex
| _version_ | 1804124424037728256 |
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| adam_text | Contents
PREFACE
xi
il
MATERIALS RESEARCH SOCIETY SYMPOSIUM
PROCEEDINGS
xiv
PART I: SELECTIVE AREA EPITAXY
♦HETEROSTRUCTURE NANOELECTRONICS
:
A LOOK INTO THE
FUTURE (PLENARY)
3
John R. Barker
IN-SITU PATTERNING AND REGROWTH OF InP BASED
HETEROSTRUCTURES USING A NATIVE OXIDE MASK
17
Y.L. Wang, L.R. Harriott, and H. Temkin
♦SELECTIVE EPITAXY OF COMPOUND SEMICONDUCTORS IN MOVPE
GROWTH: GROWTH, MODELLING, AND APPLICATIONS
2 3
T.F. Kuech, M.
Goor
sky, A. Palevsky, P. Solomon,
and M.A.
Tischler
RAPID THERMAL CHEMICAL VAPOR DEPOSITION: SELECTIVE
EPITAXIAL SILICON GROWTH
(SEG)
3 3
J.W. Osenbach,
Y.H. Ku,
and A. Kermani
HIGH QUALITY GaAs ON Si BY SELECTIVE AREA EPITAXY
39
N.H.
Karam,
V. Haven,
S.M. Vernon,
N.
El-Masry,
M. Lingunis, and
N.
Haegel
THE INFLUENCE OF SUBSTRATE PATTERNING ON THREADING
DISLOCATION DENSITY AND RESIDUAL STRESS IN GaAs/Si
HETEROEPITAXIAL LAYERS
4 5
Hyunchul
Sohn,
Eicke R. Weber, Jay
Tu,
Henry P. Lee, and Shyh Wang
ISLAND FORMATION IN Ge ON Si HETEROEPITAXY
51
D.J. Eaglesham, H.-J.
Gossmann,
and M. Cerullo
FORMATION OF HIGH QUALITY Si1_xGex/Si HETEROSTRUCTURES
BY SELECTIVE-AREA MBE GROWTH
57
Eiichi Murakami, Akio Nishida, Hiroyuki Etoh,
Kiyokazu Nakagawa, and Masanobu Miyao
PART II: ORDERING I
See also paper on page
609
(Part X: Ordering II)
OPTICAL INVESTIGATIONS OF SYMMETRY BREAKING IN GaInP2
65
A. Mascarenhas, Sarah Kurtz, A. Kibbler, and
J.M. Olson
CHARACTERIZATION AND GROWTH OF ORGANIC MULTIPLE QUANTUM
WELL STRUCTURES
71
F.F.
So, S.R. Forrest, Y.Q. Shi, and W.H. Steier
*Invited Paper
TEMPERATURE
DEPENDENCE OF COMPOSITIONAL DISORDERING OF
GaAs-AlAs SUPERLATTICES DURING MeV Kr IRRADIATION
79
R.P. Bryan, L.M. Miller, T.M. Cockerill,
J.J. Coleman, J.L. Klatt, and R.S.
Averback
PROPERTIES OF INTERFACES BETWEEN
SUPERLATTICE
HETEROSTRUCTURES AND UNIFORM ALLOY MATERIALS AS
REALIZED BY IMPURITY INDUCED DISORDERING
85
R.L. Thornton, F.A. Ponce, G.B. Anderson, and
H.F. Chung
PART III: THEORY AND MODELING
♦NUCLEATION AND GROWTH MECHANISMS IN HETERO-EPITAXIAL
FILMS
93
J.A.
Venables,
J.
S.
Drucker,
M.
Krishnamurthy,
G.
Raynerd, and
T. Doust
HETEROEPITAXY BETWEEN LATTICE-MISMATCHED MATERIALS
WITH VAN
DER WAALS
INTERACTIONS
105
Atsushi Koma
DISLOCATION ARRAYS IN EPITAXIAL INTERFACES 111
R. Beanland and R.C. Pond
PART IV: GaAs HETEROEPITAXY
♦HETEROEPITAXY OF InP ON Si FOR OPTICAL DEVICES
119
Hidefumi Mori, Mitsuru
Sugo,
Masami Tachikawa,
Yoshio Itoh, and Masafumi Yamaguchi
ATOMI
CALLY ABRUPT AND SMOOTH
HETEROINTERFACES: AN
OPTICAL INVESTIGATION
129
Colin A. Warwick, William Y. Jan, Abbas Ourmazd,
Timothy D. Harris, and
Jürgen
Christen
WEDGE
ТЕМ
CHARACTERIZATION OF MOVPE GalnAs/InP LAYERS,
CONCENTRATION GRADING AT INTERFACES
135
R. Spycher,
P.A.
Stadelmann, and
P.A.
Buffat
CHARACTERISTICS OF MOCVD-GROWN AlGaAs/GaAs SQW LASERS
AND GaAs MESFETs FABRICATION ON Si SUBSTRATE WITH
SiOj-BACK COATING
141
Takashi Egawa, Hitoshi
Tada,
Yasufumi Kobayashi,
Shinji Nozaki, Tetsuo
Soga,
Takashi Jimbo, and
Masayoshi Umeno
STUDY OF THE INFLUENCE OF STRUCTURAL PROPERTIES ON Si
AND Be DOPING OF HETEROEPITAXIAL InASSb ON GaAs-COATED
Si SUBSTRATES FOR INFRARED
PHOTODIODES
147
J.
De
Boeck,
W.
Dobbelaere, M.
Van Hove,
J.
Vanhellemont,
W.
De Raedt,
W.
Vandervorst,
R. Mertens, and G. Borghs
♦Invited
Paper
*BURIED METAL/III-V
SEMICONDUCTOR HETEROEPITAXY
:
APPROACHES TO LATTICE MATCHING
153
C.J.
Palmström,
J.
P. Harbison,
T.
Sands,
R.
Ramesh,
T.G. Finstad,
S. Mounier, J.G. Zhu, C.B. Carter,
L.
T. Florez, and V.G. Keramidas
IMPROVEMENT OF InP-GaAs-Si QUALITY BY THERMAL-CYCLE
GROWTH
163
S.M. Vernon,
C.J.
Keavney, E.D. Gagnon,
N.H.
Karam,
M.M.
Al-Jassim,
N.M. Haegel,
V.P.
Mazzi,
and C.R.
Wie
MISFIT DISLOCATIONS AT MISMATCHED EPITACTIC
HETERO
JUNCTIONS
171
Jane G. Zhu,
С
Barry Carter, and
Chris J.
Palmström
DEFECTS IN MBE-GROWN GaAs/S^Er. As/GaAs LAYERS
177
Jane G. Zhu, Chris J.
Palmström,
and
C. Barry Carter
*ATOMIC LAYER EPITAXY
18 3
Akira
Usui
INTERFACE FORMATION AND THE HETEROEPITAXY OF ZnSe ON Si
195
R.D.
Bringans,
D.K.
Biegelsen, F.
A. Ponce,
L.
-E. Swartz, and J.C. Tramontana
ТЕМ
CHARACTERIZATION OF DISLOCATIONS IN GaAs-ON-Si
HETEROSTRUCTURES WITH
SUPERLATTICE
INTERMEDIATE LAYERS
2 01
T.
Soga,
H.
Nishikawa,
T.
Jimbo, and M. Umeno
THE INFLUENCE OF INITIAL GROWTH ON DEFECT GENERATION IN
MOCVD GROWN GaAs/Si HETEROEPITAXIAL LAYERS
2 07
T. George, E.R. Weber, S. Nozaki, A.T. Wu, and
M
.
Umeno
UNDOPED GaAs WITH A LOW ELECTRON CONCENTRATION GROWN ON
Si BY MOCVD
213
Shinji Nozaki, A.T. Wu, J.J. Murray, T. George,
and M. Umeno
GaAs HETEROEPITAXY ON SUBSTRATE-ENGINEERED SILICON USING
SiJtGe1_JC MULTILAYER STRUCTURES
219
J.B. Posthill,
R. Venkatasubramanian, D.
P. Malta,
S.V.
Hattangady,
G.G.
Fountain, M.L. Timmons, and
R.J. Markunas
NUCLEATION AND DEFECT STRUCTURES OF GaAs FILMS GROWN ON
REACTIVE ION ETCHED Si SUBSTRATES
2 25
Henry P. Lee, Thomas George, Hyunchul
Sohn,
Jay
Tu,
Eicke R. Weber, and Shyh Wang
*THE HETEROEPITAXY AND CHARACTERIZATION OF InP AND GalnP
ON SILICON FOR SOLAR CELL APPLICATIONS
235
M.M. Al-Jassim, R.K. Ahrenkiel, M.W. Wanlass,
J.M. Olson, and
S.M. Vernon
♦Invited Paper
GROWTH AND CHARACTERIZATION OF InP/GaAs ON SOI BY MOCVD
247
N.H.
Karam,
V. Haven, S.M.
Vernon,
F. Namavar,
N. El-Masry, N. Haegel,
and M.M. Al-Jassim
OPTIMISATION OF THE HETEROEPITAXY OF Ge ON GaAs FOR
MINORITY-CARRIER LIFETIME
253
R. Venkatasubramanian, M.L. Timmons, S. Bothra,
and J.M.
Borrego
»ALTERNATIVE CHEMISTRIES FOR MOCVD GROWTH OF III/V
MATERIALS 259
R.M. Lum and J.K. Klingert
MBE GROWTH OF HIGH QUALITY (111)
В
GaAs, GalnAs, AND
AlInAs
265
P. Harshman,
K.J.
Malloy, J. Walker, J.S. Smith,
and
S. Wang
HETEROEPITAXIAL GROWTH OF InP AND GalnAs ON GaAs
SUBSTRATES USING TERTIARYBUTYLARSINE AND
TERTIARYBUTYLPHOSPHINE
271
Shirley
S. Chu,
T.L. Chu, C.H. Yoo, and G.L. Smith
MOLECULAR BEAM EPITAXIAL GROWTH AND CHARACTERIZATION OF
InSb AND InAsxSb1_x
277
P.N. Uppal,
D.M.
Gill, and R. Herring
MBE GROWTH OF STRAINED-LAYER InSb/InAlSb STRUCTURES
283
C.R. Whitehouse,
CF.
McConville, G.M. Williams,
A.G. Cullis, S.J. Barnett, M.K.
Saker,
M.S. Skolnick, and
A.D.
Pitt
InGaAs/AlAsSb HETEROSTRUCTURES LATTICE-MATCHED TO InP
GROWN BY MOLECULAR BEAM EPITAXY
289
Y.
Nakata,
Y.
Sugiyama,
T.
Inata, O.
Ueda, S.
Sasa,
S.
Muto,
and T.
Fujii
PART
V:
ELECTRONIC
PROPERTIES
&
DEVICES
InGaAs/GaAs
GRADED
SUPERLATTICES IN PHOTODETECTORS FOR
WAVELENGTHS BEYOND
1
μπι
297
R.
Mariella,
Jr.,
J.
Morse, and
Z.
Liliental-Weber
INFRARED PHOTOCONDUCTIVITY AND
PHOTOLUMINESCENCE
FROM
InAs/Ga1_xInxSb STRAINED-LAYER SUPERLATTICES
3 03
R.H. Miles,
D.H.
Chow, and T.C. McGill
♦SEMICONDUCTOR RESONANT TUNNELING DEVICE PHYSICS AND
APPLICATIONS 30g
Mark A. Reed, Alan C. Seabaugh, Yung-Chung
Kao,
John
N.
Randall, William R. Frensley, and
James H. Luscombe
ZINC DIFFUSION IN GaAs-AlGaAs HETEROJUNCTION BIPOLAR
TRANSISTOR STRUCTURES 32i
W.S. Hobson, S.J. Pearton, and A.S. Jordan
♦Invited Paper
ON THE THERMOELECTRIC POWER IN QUANTUM DOTS OF
NON-PARABOLIC SEMICONDUCTORS IN THE PRESENCE OF A
CLASSICALLY LARGE FIELD
327
Kamakhya P. Ghatak, B.
De, M.
Mondai,
and
S.N.
Biswas
EINSTEIN RELATION IN QUANTUM WIRES OF TETRAGONAL
SEMICONDUCTORS
33 3
Kamakhya P. Ghatak,
B. De, M.
Mondai,
and
S.N.
Biswas
PART VI: CHARACTERIZATION METHODS
»OPTICAL APPROACHES TO REAL-TIME ANALYSIS AND CONTROL
OF CRYSTAL GROWTH
341
D.E.
Aspnes
♦ELECTRON MICROSCOPY AND DIFFRACTION OF THE EARLY
STAGES OF METAL HETEROEPITAXY
3 53
E. Bauer
♦SCANNING TUNNELING MICROSCOPY STUDIES OF GaAs
HETEROEPITAXIAL GROWTH ON Si
3 59
D.K.
Biegelsen,
R.D.
Bringans,
J.E. Northrup,
and
L.E. Swartz
ТЕМ
STUDY OF THE STRUCTURE OF MBE GaAs LAYERS GROWN
AT LOW TEMPERATURE
371
Zuzanna
Liliental-Weber
CHARACTERIZATION OF GaAs/AlGaAs HETEROSTRUCTURE QUANTUM
WELLS BY MICROWAVE ABSORPTION
3 77
Hans P.
Zappe
and Wolfgang Jantz
CHARACTERIZATION OF MBE GaAs LAYERS GROWN
AT 200°C-300°C
383
C.R.
Wie,
К.
Xie,
T.T. Bardin,
J.
G.
Pronko,
D.C. Look,
K.R.
Evans, and
C.E. Stutz
A NOVEL APPROACH TO THE ASSESSMENT OF SEMICONDUCTOR
HETERO-INTERFACES
IN MULTILAYER STRUCTURES
389
J.S. Rimmer, M. Missous, A.R. Peaker, and
B. Hamilton
PART
VII: II-VI
HETEROEPITAXY
*MBE GROWTH AND CHARACTERIZATION OF HgCdTe
HETEROSTRUCTURES
3 97
R.J. Koestner, M.W. Goodwin, and H.F. Schaake
HETEROEPITAXY OF Ge ON VICINAL Si
(100) 409
Mohan Krishnamurthy
,
Jeff S.
Drucker,
and
J.A.
Venables
♦Invited Paper
EXPLANATION OF OBSERVED
P
-ΤΥΡΕ
CONDUCTIVITY IN MOVPE
ZnSe/GaAs HETEROSTRUCTURES 415
O. Briot, T. cloitre,
N. Tempier, R. Sauvezon,
M.
Averous, and R.L. Aulombard
COMPUTER SIMULATION OF THE METAL ORGANIC CHEMICAL VAPOR
DEPOSITION OF CdTe 421
S. Kang, T.J. Jasinski, G.S.
Tompa,
and R.A. Stall
OPTICAL INVESTIGATION OF THE BAND OFFSET OF
CdxZn1_xTe/ZnTe AND ZnSexTe1_x/ZnTe SUPERLATTICES
427
Y.~XRajakarunanayake, M.C. Phillips, J.O. McCaldin,
D.H.
Chow, D.A. Collins, and T.C. McGill
AN ELECTRON MICROSCOPIC CHARACTERIZATION OF MBE-GROWN
ZnSe/GaAs AND ZnSe/Ge
HETEROINTERFACES
433
S.B.
Sant,
R.W.
Smith,
and G.C. Weatherly
GROWTH AND CHARACTERIZATION OF ZnSeTe EPILAYERS AND
SUPERLATTICES
4 39
M.C. Phillips, Y. Rajakarunanayake, J.O. McCaldin,
R.H. Miles,
D.H.
Chow, D.A. Collins, and T.C. McGill
XPS AND AES STUDIES OF THE INITIAL STAGE OF CdTe GROWTH
ON
(100)
GaAs BY MOVPE
445
Mitsuru Ekawa, Kazuhito Yasuda, Syuji
Sone,
Yoshiyuki Sugiura, Manabu
Saji,
and Akikazu Tanaka
PROPERTIES OF IV-VI NARROW GAP SEMICONDUCTORS ON
FLUORIDE COVERED SILICON
451
H. Zogg,
С
Maissen, S. Blunier, J.
Masek, V.
Meyer,
and R.E. Pixley
PART
VIII:
Si HETEROEPITAXY
:
GeSi ON Si
»STRAIN RELAXATION MECHANISMS IN LATTICE MISMATCHED
EPITAXY
459
R. Hull, J.C. Bean, J.M.
Bonar,
and L. Peticolas
X-RAY STUDY OF
INTERDIFFUSION
AND STRAIN RELAXATION IN
ANNEALED (SimGen) ATOMIC LAYER SUPERLATTICES
473
J.-M. Baribeau, R.
Pascual,
and S. Saimoto
LUMINESCENCE OF MBE Si Ge STRAINED MONOLAYER
SUPERLATTICES
479
M.A. Kallel, v. Arbet-Engels, R.p.G. Karunasiri,
and K.L. Wang
Si/Ge STRAINED-LAYER EPITAXY: Si Ge ALLOY BUFFER
LAYERS AND ULTRA-SHORT PERIOD S^Ge* SUPERLATTICES
485
M. Ospelt, J. Henz, E.
Müller,
and H.
Von Känel
ROLE OF
SÍ1.JEGex
BUFFER LAYER IN DETERMINING ELECTRICAL
CHARACTERISTICS OF MODULATION-DOPED
P~Si0..5.Ge0,5/Ge/Sii-xGex HETEROSTRUCTURES
491
Eiichi Murakami, Hiroyuki Etoh, Akio Nishida,
Kiyokazu Nakagawa, and Masanobu Miyao
♦Invited Paper
HETEROEPITAXIAL C^Si^/Si
(100)
METASTABLE
ALLOYS
497
J.B.
Posthill,
R.~A.
Rudder,
S.V.
Hattangady,
G.G.
Fountain,
T.
P. Humphreys,
R. J.
Nemanich,
N.R. Parikh, and R.J. Markunas
CONFINEMENT OF THREADING DISLOCATIONS IN
SIMOX
WITH A
GeSi STRAINED LAYER
503
F. Namavar,
E. Cortesi,
D.L.
Perry,
E.A. Johnson,
N.M.
Kalkhoran,
J.M. Manke, N.H.
Karam,
R.F. Pinizzotto, and H. Yang
RAPID THERMAL
PROCESSING
OF BURIED
Sil_xGejt
STRAINED
LAYERS;
PHOTOLUMINESCENCE
DECAY AND MISFIT DISLOCATION
GENERATION
509
D.C. Houghton and N.L. Rowell
ALLOYS
515
N.L. Rowell, J.-P.
Noël,
D.C.
Houghton, and
D.D.
Perovic
RAPID THERMAL OXIDATION OF GeSi STRAINED LAYERS
521
D.K. Nayak, K. Kamjoo, J.S. Park, J.C.S. Woo,
and K.L. Wang
GROWTH OF EPITAXIAL LAYERS OF Ge^Sij BY UHV/CVD
527
Marco Racanelli and David W.
Greve
DISILANE ADSORPTION ON Ge(lll): A MULTIPLE INTERNAL
REFLECTION INFRARED SPECTROSCOPY STUDY
533
John E. Crowe
11
and Guangquan
Lu
*GAS SOURCE Si-MBE
539
Hiroyuki Hirayama, Masayuki Hiroi, Kazuhisa Koyama,
and
Toru
Tatsumi
HETEROEPITAXY AND CHARACTERISATION OF Ge-RICH SiGe ALLOYS
ON GaAs
547
R. Venkatasubramanian, M.L. Timmons, M. Mantini,
C.T.
Kao,
and N.R. Parikh
CARBON DOPED SILICON EMITTERS FABRICATED USING LIMITED
REACTION PROCESSING
553
F.H. Ruddell, B.M. Armstrong, H.S. Gamble,
K.B. Affolter, P.B.
Moynagh, and P.J.
Rosser
DEFECT REDUCTION OF CVD-GROWN CUBIC SiC EPITAXIAL
FILMS ON OFF-AXIS Si
(100)
SUBSTRATES WITH A NOVEL
OFF-DIRECTION
559
Katsuki Furukawa, Yoshihisa
Fujii, Akira
Suzuki,
and Shigeo Nakajima
PART IX: Si HETEROEPITAXY: METAL SILICIDES
MESO-EPITAXY
:
EPITAXIAL GROWTH OF SILICON OVER BURIED
SINGLE CRYSTAL CoSij LAYERS
567
J.W. Osenbach, A.E. White, K.T. Short,
H.C. Praefcke, and
V.C. Kannon
♦Invited Paper
ELECTRICAL PROPERTIES OF ION BEAM SPUTTERING GROWN
EPITAXIAL YTTRIA STABILIZED ZIRCONIA FILMS ON SILICON
577
P. Hesto, C. Pellet,
С
Schwebel, E. DuPont-Nivet,
and
A. Le Noxaic
COLUMNAR EPITAXY OF HEXAGONAL AND ORTHORHOMBIC SILICIDES
ON SiUll)
583
R.W. Fathauer, C.W. Nieh, Q.F. Xiao, and
Shin Hashimoto
FORMATION OF PINHOLE-FREE EPITAXIAL YTTRIUM SILICIDE
ON SILICON(111)
589
Michael P. Siegal, Jorge J. Santiago, and
William R. Graham
EPITAXIAL GROWTH AND STABILITY OF C49 TiSij ON Si(111)
595
Hyeongtag Jeon, J.W. Honeycutt, C.A. Sukow,
T.P. Humphreys, R.J.
Nemanich,
and G.A. Rozgonyi
STRUCTURAL CHARACTERIZATION OF ULTRATHIN EPITAXIAL
ErSi2_x ON Si (111)
601
F.H. Kaatz, J. Van
der
Spiegel, and W.R. Graham
PART X: ORDERING II
See also Part II: Ordering I
♦SURFACE PHASE SEPARATION AND ORDERING IN COMPOUND
SEMICONDUCTOR ALLOYS
609
T.L. McDevitt, s. Mahajan,
D.E.
Laughlin,
W.A.
Bonner,
and V.G.
Ker
amidas
AUTHOR INDEX
625
SUBJECT INDEX
629
MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS
633
*Invited Paper
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| any_adam_object | 1 |
| author2 | Shaw, Don W. |
| author2_role | edt |
| author2_variant | d w s dw dws |
| author_facet | Shaw, Don W. |
| building | Verbundindex |
| bvnumber | BV010041750 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.85 |
| callnumber-search | TK7871.85 |
| callnumber-sort | TK 47871.85 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_rvk | UP 7550 UP 7590 UQ 1100 UQ 2200 |
| classification_tum | ELT 280f |
| ctrlnum | (OCoLC)22207468 (DE-599)BVBBV010041750 |
| dewey-full | 621.381/52 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381/52 |
| dewey-search | 621.381/52 |
| dewey-sort | 3621.381 252 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02226nam a2200517 cb4500</leader><controlfield tag="001">BV010041750</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20221130 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">950214s1990 d||| |||| 10||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">1558990879</subfield><subfield code="9">1-55899-087-9</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)22207468</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV010041750</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield><subfield code="a">DE-91G</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-11</subfield><subfield code="a">DE-355</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.85</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.381/52</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 7550</subfield><subfield code="0">(DE-625)146434:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 7590</subfield><subfield code="0">(DE-625)146438:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UQ 1100</subfield><subfield code="0">(DE-625)146473:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UQ 2200</subfield><subfield code="0">(DE-625)146489:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 280f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Shaw, Don W.</subfield><subfield code="4">edt</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Epitaxial heterostructures</subfield><subfield code="b">symposium held April 16 - 19, 1990, San Francisco, California, USA</subfield><subfield code="c">eds.: Don W. Shaw ...</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Pittsburgh, Pa.</subfield><subfield code="b">Materials Research Soc.</subfield><subfield code="c">1990</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XIII, 631 S.</subfield><subfield code="b">graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Materials Research Society: Materials Research Society symposia proceedings</subfield><subfield code="v">198</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Epitaxy</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Heterostructures</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Epitaxie</subfield><subfield code="0">(DE-588)4152545-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heterostruktur</subfield><subfield code="0">(DE-588)4123378-5</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1990</subfield><subfield code="z">San Francisco Calif.</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="689" ind1="1" ind2="0"><subfield code="a">Epitaxie</subfield><subfield code="0">(DE-588)4152545-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2="1"><subfield code="a">Heterostruktur</subfield><subfield code="0">(DE-588)4123378-5</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="1" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">Symposium on Epitaxial Heterostructures</subfield><subfield code="d">1990</subfield><subfield code="c">San Francisco, Calif.</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)5055295-8</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Materials Research Society: Materials Research Society symposia proceedings</subfield><subfield code="v">198</subfield><subfield code="w">(DE-604)BV001899105</subfield><subfield code="9">198</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung TU Muenchen</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006659560&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-006659560</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1990 San Francisco Calif. gnd-content |
| genre_facet | Konferenzschrift 1990 San Francisco Calif. |
| id | DE-604.BV010041750 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T17:45:26Z |
| institution | BVB |
| institution_GND | (DE-588)5055295-8 |
| isbn | 1558990879 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-006659560 |
| oclc_num | 22207468 |
| open_access_boolean | |
| owner | DE-29T DE-91G DE-BY-TUM DE-83 DE-11 DE-355 DE-BY-UBR |
| owner_facet | DE-29T DE-91G DE-BY-TUM DE-83 DE-11 DE-355 DE-BY-UBR |
| physical | XIII, 631 S. graph. Darst. |
| publishDate | 1990 |
| publishDateSearch | 1990 |
| publishDateSort | 1990 |
| publisher | Materials Research Soc. |
| record_format | marc |
| series | Materials Research Society: Materials Research Society symposia proceedings |
| series2 | Materials Research Society: Materials Research Society symposia proceedings |
| spelling | Shaw, Don W. edt Epitaxial heterostructures symposium held April 16 - 19, 1990, San Francisco, California, USA eds.: Don W. Shaw ... Pittsburgh, Pa. Materials Research Soc. 1990 XIII, 631 S. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials Research Society: Materials Research Society symposia proceedings 198 Epitaxy Congresses Heterostructures Congresses Epitaxie (DE-588)4152545-0 gnd rswk-swf Heterostruktur (DE-588)4123378-5 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1990 San Francisco Calif. gnd-content Halbleiter (DE-588)4022993-2 s DE-604 Epitaxie (DE-588)4152545-0 s Heterostruktur (DE-588)4123378-5 s Symposium on Epitaxial Heterostructures 1990 San Francisco, Calif. Sonstige (DE-588)5055295-8 oth Materials Research Society: Materials Research Society symposia proceedings 198 (DE-604)BV001899105 198 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006659560&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Epitaxial heterostructures symposium held April 16 - 19, 1990, San Francisco, California, USA Materials Research Society: Materials Research Society symposia proceedings Epitaxy Congresses Heterostructures Congresses Epitaxie (DE-588)4152545-0 gnd Heterostruktur (DE-588)4123378-5 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4152545-0 (DE-588)4123378-5 (DE-588)4022993-2 (DE-588)1071861417 |
| title | Epitaxial heterostructures symposium held April 16 - 19, 1990, San Francisco, California, USA |
| title_auth | Epitaxial heterostructures symposium held April 16 - 19, 1990, San Francisco, California, USA |
| title_exact_search | Epitaxial heterostructures symposium held April 16 - 19, 1990, San Francisco, California, USA |
| title_full | Epitaxial heterostructures symposium held April 16 - 19, 1990, San Francisco, California, USA eds.: Don W. Shaw ... |
| title_fullStr | Epitaxial heterostructures symposium held April 16 - 19, 1990, San Francisco, California, USA eds.: Don W. Shaw ... |
| title_full_unstemmed | Epitaxial heterostructures symposium held April 16 - 19, 1990, San Francisco, California, USA eds.: Don W. Shaw ... |
| title_short | Epitaxial heterostructures |
| title_sort | epitaxial heterostructures symposium held april 16 19 1990 san francisco california usa |
| title_sub | symposium held April 16 - 19, 1990, San Francisco, California, USA |
| topic | Epitaxy Congresses Heterostructures Congresses Epitaxie (DE-588)4152545-0 gnd Heterostruktur (DE-588)4123378-5 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Epitaxy Congresses Heterostructures Congresses Epitaxie Heterostruktur Halbleiter Konferenzschrift 1990 San Francisco Calif. |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=006659560&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001899105 |
| work_keys_str_mv | AT shawdonw epitaxialheterostructuressymposiumheldapril16191990sanfranciscocaliforniausa AT symposiumonepitaxialheterostructuressanfranciscocalif epitaxialheterostructuressymposiumheldapril16191990sanfranciscocaliforniausa |