Modeling nanowire and double-gate junctionless field-effect transistors /:
A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Cambridge, United Kingdom ; New York, NY, USA :
Cambridge University Press,
2018.
|
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Zusammenfassung: | A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations. |
| Beschreibung: | 1 online resource |
| Bibliographie: | Includes bibliographical references and index. |
| ISBN: | 9781108557535 1108557538 9781316676899 1316676897 9781107162044 1107162041 |
Internformat
MARC
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| 245 | 1 | 0 | |a Modeling nanowire and double-gate junctionless field-effect transistors / |c Farzan Jazaeri, École Polytechnique Fédérale de Lausanne, Jean-Michel Sallese, École Polytechnique Fédérale de Lausanne. |
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| 504 | |a Includes bibliographical references and index. | ||
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| 505 | 0 | |a Cover; Half Title; Title page; Imprints page; Contents; Foreword; Preface; List of Abbreviations; List of Symbols; 1 Introduction; 1.1 The Birth of the Transistor; 1.2 The Metal-Oxideâ#x80;#x93;Semiconductor Field-Effect Transistor; 1.3 Moore's Law, Limits of CMOS Scaling, and Alternative MOSFET Structures; 1.3.1 Scaling in Bulk MOSFETs; 1.3.2 Silicon-on-Insulator MOSFETs; 1.4 The Junctionless Concept; 1.4.1 Working Principle of Junctionless MOSFETs; 1.4.2 Diversity in Junctionless Architectures; 1.5 Short-Channel Effects in Junctionless FETs; 1.6 Mobility in Junctionless FETs. | |
| 505 | 8 | |a 1.7 The Critical Aspect of Random Dopant Fluctuation1.7.1 Random Dopant Fluctuations in Junctionless FETs; 1.8 Summary; 2 Review on Modeling Junctionless FETs; 2.1 Modeling Junctionless Double-Gate MOSFETs; 2.1.1 Full Depletion Approximation; 2.1.2 Enhanced Depletion Approximation; 2.1.3 Surface Potential-based Approach; 2.1.4 Simplified Current Model Involving Pinch-Off; 2.1.5 Semiempirical Charge-based Approach; 2.1.6 Analytical Approach based on Conventional Inversion-Mode MOSFETs; 2.1.7 Parabolic Approximation and Full-Range Drain Current. | |
| 505 | 8 | |a 2.1.8 Gaussian Distribution of Mobile Charge Density2.1.9 Simple Model to Estimate Junctionless FET Performances; 2.1.10 Explicit Drain Current Model Relying on Charge-based Approach; 2.1.11 Modeling of Quantum Mechanical Effects; 2.1.12 Short-Channel Effects in Subthreshold; 2.1.13 Transcapacitance Modeling; 2.1.14 Modeling Asymmetry in Junctionless Double-Gate MOSFETs; 2.2 Modeling Junctionless Nanowire MOSFETs; 2.2.1 Short-Channel Effects in the Subthreshold; 2.2.2 Transcapacitance Modeling in Junctionless Nanowire FETs; 2.2.3 Quantum Mechanical Effects in Junctionless Nanowire FETs. | |
| 505 | 8 | |a 2.3 Summary3 The EPFL Charge-based Model of Junctionless Field-Effect Transistors; 3.1 Charge-based Modeling of Junctionless Double-Gate Field-Effect Transistors; 3.1.1 Recalling Basics of Semiconductor Statistics; 3.1.2 Approximate Solution of the Poissonâ#x80;#x93;Boltzmann Equation in Junctionless Double-Gate MOSFET; 3.1.3 Introduction of Symmetric Gate Capacitances; 3.1.4 Derivation of Explicit Voltageâ#x80;#x93;Charge Relationships; 3.1.5 Analytical versus Numerical Simulations; 3.1.6 Threshold Voltage in Junctionless FETs; 3.1.7 Derivation of the Channel Current; 3.1.8 Evaluation of the Charge Integral. | |
| 505 | 8 | |a 3.1.9 General Treatment of the Current in Junctionless Double-Gate MOSFETs3.1.10 Simulation Results; 3.2 A Common Core Model for Junctionless Nanowires and Symmetric DG FETs; 3.2.1 Analysis of Electrostatics in Junctionless Nanowire FETs; 3.2.2 Derivation of the Current in a Junctionless Nanowire; 3.2.3 Simulations; 3.3 Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs; 3.3.1 Approximated Solution in Depletion; 3.3.2 Approximated Solution in Accumulation Mode; 3.3.3 Approximated Solution in Weak Accumulation Mode; 3.4 Summary. | |
| 520 | |a A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations. | ||
| 650 | 0 | |a Metal semiconductor field-effect transistors. |0 http://id.loc.gov/authorities/subjects/sh85084082 | |
| 650 | 0 | |a Nanowires. |0 http://id.loc.gov/authorities/subjects/sh97004111 | |
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Datensatz im Suchindex
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| author | Jazaeri, Farzan Sallese, Jean-Michel |
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| contents | Cover; Half Title; Title page; Imprints page; Contents; Foreword; Preface; List of Abbreviations; List of Symbols; 1 Introduction; 1.1 The Birth of the Transistor; 1.2 The Metal-Oxideâ#x80;#x93;Semiconductor Field-Effect Transistor; 1.3 Moore's Law, Limits of CMOS Scaling, and Alternative MOSFET Structures; 1.3.1 Scaling in Bulk MOSFETs; 1.3.2 Silicon-on-Insulator MOSFETs; 1.4 The Junctionless Concept; 1.4.1 Working Principle of Junctionless MOSFETs; 1.4.2 Diversity in Junctionless Architectures; 1.5 Short-Channel Effects in Junctionless FETs; 1.6 Mobility in Junctionless FETs. 1.7 The Critical Aspect of Random Dopant Fluctuation1.7.1 Random Dopant Fluctuations in Junctionless FETs; 1.8 Summary; 2 Review on Modeling Junctionless FETs; 2.1 Modeling Junctionless Double-Gate MOSFETs; 2.1.1 Full Depletion Approximation; 2.1.2 Enhanced Depletion Approximation; 2.1.3 Surface Potential-based Approach; 2.1.4 Simplified Current Model Involving Pinch-Off; 2.1.5 Semiempirical Charge-based Approach; 2.1.6 Analytical Approach based on Conventional Inversion-Mode MOSFETs; 2.1.7 Parabolic Approximation and Full-Range Drain Current. 2.1.8 Gaussian Distribution of Mobile Charge Density2.1.9 Simple Model to Estimate Junctionless FET Performances; 2.1.10 Explicit Drain Current Model Relying on Charge-based Approach; 2.1.11 Modeling of Quantum Mechanical Effects; 2.1.12 Short-Channel Effects in Subthreshold; 2.1.13 Transcapacitance Modeling; 2.1.14 Modeling Asymmetry in Junctionless Double-Gate MOSFETs; 2.2 Modeling Junctionless Nanowire MOSFETs; 2.2.1 Short-Channel Effects in the Subthreshold; 2.2.2 Transcapacitance Modeling in Junctionless Nanowire FETs; 2.2.3 Quantum Mechanical Effects in Junctionless Nanowire FETs. 2.3 Summary3 The EPFL Charge-based Model of Junctionless Field-Effect Transistors; 3.1 Charge-based Modeling of Junctionless Double-Gate Field-Effect Transistors; 3.1.1 Recalling Basics of Semiconductor Statistics; 3.1.2 Approximate Solution of the Poissonâ#x80;#x93;Boltzmann Equation in Junctionless Double-Gate MOSFET; 3.1.3 Introduction of Symmetric Gate Capacitances; 3.1.4 Derivation of Explicit Voltageâ#x80;#x93;Charge Relationships; 3.1.5 Analytical versus Numerical Simulations; 3.1.6 Threshold Voltage in Junctionless FETs; 3.1.7 Derivation of the Channel Current; 3.1.8 Evaluation of the Charge Integral. 3.1.9 General Treatment of the Current in Junctionless Double-Gate MOSFETs3.1.10 Simulation Results; 3.2 A Common Core Model for Junctionless Nanowires and Symmetric DG FETs; 3.2.1 Analysis of Electrostatics in Junctionless Nanowire FETs; 3.2.2 Derivation of the Current in a Junctionless Nanowire; 3.2.3 Simulations; 3.3 Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs; 3.3.1 Approximated Solution in Depletion; 3.3.2 Approximated Solution in Accumulation Mode; 3.3.3 Approximated Solution in Weak Accumulation Mode; 3.4 Summary. |
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| id | ZDB-4-EBA-on1026492449 |
| illustrated | Not Illustrated |
| indexdate | 2024-11-27T13:28:14Z |
| institution | BVB |
| isbn | 9781108557535 1108557538 9781316676899 1316676897 9781107162044 1107162041 |
| language | English |
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| publishDateSort | 2018 |
| publisher | Cambridge University Press, |
| record_format | marc |
| spelling | Jazaeri, Farzan, author. http://id.loc.gov/authorities/names/n2018005200 Modeling nanowire and double-gate junctionless field-effect transistors / Farzan Jazaeri, École Polytechnique Fédérale de Lausanne, Jean-Michel Sallese, École Polytechnique Fédérale de Lausanne. Cambridge, United Kingdom ; New York, NY, USA : Cambridge University Press, 2018. 1 online resource text txt rdacontent computer c rdamedia online resource cr rdacarrier Includes bibliographical references and index. Online resource; title from PDF title page (EBSCO, viewed March 2, 2018). Cover; Half Title; Title page; Imprints page; Contents; Foreword; Preface; List of Abbreviations; List of Symbols; 1 Introduction; 1.1 The Birth of the Transistor; 1.2 The Metal-Oxideâ#x80;#x93;Semiconductor Field-Effect Transistor; 1.3 Moore's Law, Limits of CMOS Scaling, and Alternative MOSFET Structures; 1.3.1 Scaling in Bulk MOSFETs; 1.3.2 Silicon-on-Insulator MOSFETs; 1.4 The Junctionless Concept; 1.4.1 Working Principle of Junctionless MOSFETs; 1.4.2 Diversity in Junctionless Architectures; 1.5 Short-Channel Effects in Junctionless FETs; 1.6 Mobility in Junctionless FETs. 1.7 The Critical Aspect of Random Dopant Fluctuation1.7.1 Random Dopant Fluctuations in Junctionless FETs; 1.8 Summary; 2 Review on Modeling Junctionless FETs; 2.1 Modeling Junctionless Double-Gate MOSFETs; 2.1.1 Full Depletion Approximation; 2.1.2 Enhanced Depletion Approximation; 2.1.3 Surface Potential-based Approach; 2.1.4 Simplified Current Model Involving Pinch-Off; 2.1.5 Semiempirical Charge-based Approach; 2.1.6 Analytical Approach based on Conventional Inversion-Mode MOSFETs; 2.1.7 Parabolic Approximation and Full-Range Drain Current. 2.1.8 Gaussian Distribution of Mobile Charge Density2.1.9 Simple Model to Estimate Junctionless FET Performances; 2.1.10 Explicit Drain Current Model Relying on Charge-based Approach; 2.1.11 Modeling of Quantum Mechanical Effects; 2.1.12 Short-Channel Effects in Subthreshold; 2.1.13 Transcapacitance Modeling; 2.1.14 Modeling Asymmetry in Junctionless Double-Gate MOSFETs; 2.2 Modeling Junctionless Nanowire MOSFETs; 2.2.1 Short-Channel Effects in the Subthreshold; 2.2.2 Transcapacitance Modeling in Junctionless Nanowire FETs; 2.2.3 Quantum Mechanical Effects in Junctionless Nanowire FETs. 2.3 Summary3 The EPFL Charge-based Model of Junctionless Field-Effect Transistors; 3.1 Charge-based Modeling of Junctionless Double-Gate Field-Effect Transistors; 3.1.1 Recalling Basics of Semiconductor Statistics; 3.1.2 Approximate Solution of the Poissonâ#x80;#x93;Boltzmann Equation in Junctionless Double-Gate MOSFET; 3.1.3 Introduction of Symmetric Gate Capacitances; 3.1.4 Derivation of Explicit Voltageâ#x80;#x93;Charge Relationships; 3.1.5 Analytical versus Numerical Simulations; 3.1.6 Threshold Voltage in Junctionless FETs; 3.1.7 Derivation of the Channel Current; 3.1.8 Evaluation of the Charge Integral. 3.1.9 General Treatment of the Current in Junctionless Double-Gate MOSFETs3.1.10 Simulation Results; 3.2 A Common Core Model for Junctionless Nanowires and Symmetric DG FETs; 3.2.1 Analysis of Electrostatics in Junctionless Nanowire FETs; 3.2.2 Derivation of the Current in a Junctionless Nanowire; 3.2.3 Simulations; 3.3 Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs; 3.3.1 Approximated Solution in Depletion; 3.3.2 Approximated Solution in Accumulation Mode; 3.3.3 Approximated Solution in Weak Accumulation Mode; 3.4 Summary. A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations. Metal semiconductor field-effect transistors. http://id.loc.gov/authorities/subjects/sh85084082 Nanowires. http://id.loc.gov/authorities/subjects/sh97004111 Transistors MESFET. Nanofils. TECHNOLOGY & ENGINEERING Mechanical. bisacsh Metal semiconductor field-effect transistors fast Nanowires fast Sallese, Jean-Michel, author. http://id.loc.gov/authorities/names/n2018005201 has work: Modeling nanowire and double-gate junctionless field-effect transistors (Text) https://id.oclc.org/worldcat/entity/E39PCH7jtWw4QVHr8hWP6YvW6q https://id.oclc.org/worldcat/ontology/hasWork Print version: 9781107162044 FWS01 ZDB-4-EBA FWS_PDA_EBA https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=1694370 Volltext |
| spellingShingle | Jazaeri, Farzan Sallese, Jean-Michel Modeling nanowire and double-gate junctionless field-effect transistors / Cover; Half Title; Title page; Imprints page; Contents; Foreword; Preface; List of Abbreviations; List of Symbols; 1 Introduction; 1.1 The Birth of the Transistor; 1.2 The Metal-Oxideâ#x80;#x93;Semiconductor Field-Effect Transistor; 1.3 Moore's Law, Limits of CMOS Scaling, and Alternative MOSFET Structures; 1.3.1 Scaling in Bulk MOSFETs; 1.3.2 Silicon-on-Insulator MOSFETs; 1.4 The Junctionless Concept; 1.4.1 Working Principle of Junctionless MOSFETs; 1.4.2 Diversity in Junctionless Architectures; 1.5 Short-Channel Effects in Junctionless FETs; 1.6 Mobility in Junctionless FETs. 1.7 The Critical Aspect of Random Dopant Fluctuation1.7.1 Random Dopant Fluctuations in Junctionless FETs; 1.8 Summary; 2 Review on Modeling Junctionless FETs; 2.1 Modeling Junctionless Double-Gate MOSFETs; 2.1.1 Full Depletion Approximation; 2.1.2 Enhanced Depletion Approximation; 2.1.3 Surface Potential-based Approach; 2.1.4 Simplified Current Model Involving Pinch-Off; 2.1.5 Semiempirical Charge-based Approach; 2.1.6 Analytical Approach based on Conventional Inversion-Mode MOSFETs; 2.1.7 Parabolic Approximation and Full-Range Drain Current. 2.1.8 Gaussian Distribution of Mobile Charge Density2.1.9 Simple Model to Estimate Junctionless FET Performances; 2.1.10 Explicit Drain Current Model Relying on Charge-based Approach; 2.1.11 Modeling of Quantum Mechanical Effects; 2.1.12 Short-Channel Effects in Subthreshold; 2.1.13 Transcapacitance Modeling; 2.1.14 Modeling Asymmetry in Junctionless Double-Gate MOSFETs; 2.2 Modeling Junctionless Nanowire MOSFETs; 2.2.1 Short-Channel Effects in the Subthreshold; 2.2.2 Transcapacitance Modeling in Junctionless Nanowire FETs; 2.2.3 Quantum Mechanical Effects in Junctionless Nanowire FETs. 2.3 Summary3 The EPFL Charge-based Model of Junctionless Field-Effect Transistors; 3.1 Charge-based Modeling of Junctionless Double-Gate Field-Effect Transistors; 3.1.1 Recalling Basics of Semiconductor Statistics; 3.1.2 Approximate Solution of the Poissonâ#x80;#x93;Boltzmann Equation in Junctionless Double-Gate MOSFET; 3.1.3 Introduction of Symmetric Gate Capacitances; 3.1.4 Derivation of Explicit Voltageâ#x80;#x93;Charge Relationships; 3.1.5 Analytical versus Numerical Simulations; 3.1.6 Threshold Voltage in Junctionless FETs; 3.1.7 Derivation of the Channel Current; 3.1.8 Evaluation of the Charge Integral. 3.1.9 General Treatment of the Current in Junctionless Double-Gate MOSFETs3.1.10 Simulation Results; 3.2 A Common Core Model for Junctionless Nanowires and Symmetric DG FETs; 3.2.1 Analysis of Electrostatics in Junctionless Nanowire FETs; 3.2.2 Derivation of the Current in a Junctionless Nanowire; 3.2.3 Simulations; 3.3 Explicit Model for Long-Channel Gate-All-Around Junctionless MOSFETs; 3.3.1 Approximated Solution in Depletion; 3.3.2 Approximated Solution in Accumulation Mode; 3.3.3 Approximated Solution in Weak Accumulation Mode; 3.4 Summary. Metal semiconductor field-effect transistors. http://id.loc.gov/authorities/subjects/sh85084082 Nanowires. http://id.loc.gov/authorities/subjects/sh97004111 Transistors MESFET. Nanofils. TECHNOLOGY & ENGINEERING Mechanical. bisacsh Metal semiconductor field-effect transistors fast Nanowires fast |
| subject_GND | http://id.loc.gov/authorities/subjects/sh85084082 http://id.loc.gov/authorities/subjects/sh97004111 |
| title | Modeling nanowire and double-gate junctionless field-effect transistors / |
| title_auth | Modeling nanowire and double-gate junctionless field-effect transistors / |
| title_exact_search | Modeling nanowire and double-gate junctionless field-effect transistors / |
| title_full | Modeling nanowire and double-gate junctionless field-effect transistors / Farzan Jazaeri, École Polytechnique Fédérale de Lausanne, Jean-Michel Sallese, École Polytechnique Fédérale de Lausanne. |
| title_fullStr | Modeling nanowire and double-gate junctionless field-effect transistors / Farzan Jazaeri, École Polytechnique Fédérale de Lausanne, Jean-Michel Sallese, École Polytechnique Fédérale de Lausanne. |
| title_full_unstemmed | Modeling nanowire and double-gate junctionless field-effect transistors / Farzan Jazaeri, École Polytechnique Fédérale de Lausanne, Jean-Michel Sallese, École Polytechnique Fédérale de Lausanne. |
| title_short | Modeling nanowire and double-gate junctionless field-effect transistors / |
| title_sort | modeling nanowire and double gate junctionless field effect transistors |
| topic | Metal semiconductor field-effect transistors. http://id.loc.gov/authorities/subjects/sh85084082 Nanowires. http://id.loc.gov/authorities/subjects/sh97004111 Transistors MESFET. Nanofils. TECHNOLOGY & ENGINEERING Mechanical. bisacsh Metal semiconductor field-effect transistors fast Nanowires fast |
| topic_facet | Metal semiconductor field-effect transistors. Nanowires. Transistors MESFET. Nanofils. TECHNOLOGY & ENGINEERING Mechanical. Metal semiconductor field-effect transistors Nanowires |
| url | https://search.ebscohost.com/login.aspx?direct=true&scope=site&db=nlebk&AN=1694370 |
| work_keys_str_mv | AT jazaerifarzan modelingnanowireanddoublegatejunctionlessfieldeffecttransistors AT sallesejeanmichel modelingnanowireanddoublegatejunctionlessfieldeffecttransistors |