Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Aachen
Shaker
2008
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| Schriftenreihe: | Berichte aus der Halbleitertechnik
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| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | 188 S. Ill., graph. Darst. 21 cm, 233 gr. |
| ISBN: | 9783832274245 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV035050373 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | t | ||
| 008 | 080912s2008 ad|| m||| 00||| eng d | ||
| 015 | |a 08,A37,0924 |2 dnb | ||
| 016 | 7 | |a 989883353 |2 DE-101 | |
| 020 | |a 9783832274245 |c kart. : EUR 48.80 (DE), EUR 48.80 (AT), sfr 97.60 (freier Pr.) |9 978-3-8322-7424-5 | ||
| 024 | 3 | |a 9783832274245 | |
| 035 | |a (OCoLC)550581909 | ||
| 035 | |a (DE-599)DNB989883353 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-29 |a DE-29T | ||
| 082 | 0 | |a 537.6226 |2 22/ger | |
| 082 | 0 | |a 537.6226 |2 22//ger | |
| 084 | |a UQ 2160 |0 (DE-625)146487: |2 rvk | ||
| 084 | |a UQ 2400 |0 (DE-625)146493: |2 rvk | ||
| 084 | |a UQ 8500 |0 (DE-625)146599: |2 rvk | ||
| 084 | |a ZM 7060 |0 (DE-625)157108: |2 rvk | ||
| 084 | |a 530 |2 sdnb | ||
| 084 | |a 620 |2 sdnb | ||
| 100 | 1 | |a Sakwe, Sakwe Aloysius |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method |c Sakwe Aloysius Sakwe |
| 264 | 1 | |a Aachen |b Shaker |c 2008 | |
| 300 | |a 188 S. |b Ill., graph. Darst. |c 21 cm, 233 gr. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Berichte aus der Halbleitertechnik | |
| 502 | |a Zugl.: Erlangen, Nürnberg, Univ., Diss., 2007 | ||
| 650 | 4 | |a Siliciumcarbid - Kristallzüchtung - Versetzung <Kristallographie> | |
| 650 | 0 | 7 | |a Kristallzüchtung |0 (DE-588)4140616-3 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Versetzung |g Kristallographie |0 (DE-588)4187993-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumcarbid |0 (DE-588)4055009-6 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Siliciumcarbid |0 (DE-588)4055009-6 |D s |
| 689 | 0 | 1 | |a Kristallzüchtung |0 (DE-588)4140616-3 |D s |
| 689 | 0 | 2 | |a Versetzung |g Kristallographie |0 (DE-588)4187993-4 |D s |
| 689 | 0 | |5 DE-604 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016719063&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-016719063 | ||
Datensatz im Suchindex
| _version_ | 1804137989895356416 |
|---|---|
| adam_text | * * BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/989883353
DIGITALISIERT DURCH 8 0 TABLEOF CONTENTS 4.2.2 RESULTS 72 4.3 INFLUENCE
OF DOPING ON BASAL PLANE DISLOCATION EVOLUTION AND DYNAMICS IN 6H-SIC 81
4.3.1 SAMPLES 81 4.3.2 PROCEDURES 83 4.3.3 RESULTS 84 4.3.4 DISCUSSIONS
ON THE INFLUENCE OFDOPING ON BASALPLANE DISLOCATION EVOLUTION AND
DYNAMICS IN PVTGROWN 6H-SIC BULK CRYSTALS 109 4.3.5 SUMMARY AND
CONCLUSIONS 118 4.4 INFLUENCE OF GROWTH TEMPERATURE ON DISLOCATION
EVOLUTION AND DYNAMICS 121 4.4.1 SAMPLES 121 4.4.2 PROCEDURES 124 4.4.3
RESULTS 125 4.4.4 DISCUSSIONS ON THE INFLUENCE OF GROWTH TEMPERATURE ON
DISLOCATION EVOLUTION DURING BULK GROWTH OF6H-SIC BY THE PVT METHOD 150
4.4.5 SUMMARY 158 4.5 RESUMEOF THE EXPERIMENTAL RESULTS 160 5 SUMMARY
163 6 ZUSAMMENFASSUNG 165 7 REFERENCES. 167 LIST OF OWN PUBLICATIONS 181
ACKNOWLEDGMENTS 185 * * *
|
| adam_txt |
* * BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/989883353
DIGITALISIERT DURCH 8 0 TABLEOF CONTENTS 4.2.2 RESULTS 72 4.3 INFLUENCE
OF DOPING ON BASAL PLANE DISLOCATION EVOLUTION AND DYNAMICS IN 6H-SIC 81
4.3.1 SAMPLES 81 4.3.2 PROCEDURES 83 4.3.3 RESULTS 84 4.3.4 DISCUSSIONS
ON THE INFLUENCE OFDOPING ON BASALPLANE DISLOCATION EVOLUTION AND
DYNAMICS IN PVTGROWN 6H-SIC BULK CRYSTALS 109 4.3.5 SUMMARY AND
CONCLUSIONS 118 4.4 INFLUENCE OF GROWTH TEMPERATURE ON DISLOCATION
EVOLUTION AND DYNAMICS 121 4.4.1 SAMPLES 121 4.4.2 PROCEDURES 124 4.4.3
RESULTS 125 4.4.4 DISCUSSIONS ON THE INFLUENCE OF GROWTH TEMPERATURE ON
DISLOCATION EVOLUTION DURING BULK GROWTH OF6H-SIC BY THE PVT METHOD 150
4.4.5 SUMMARY 158 4.5 RESUMEOF THE EXPERIMENTAL RESULTS 160 5 SUMMARY
163 6 ZUSAMMENFASSUNG 165 7 REFERENCES. 167 LIST OF OWN PUBLICATIONS 181
ACKNOWLEDGMENTS 185 * * * |
| any_adam_object | 1 |
| any_adam_object_boolean | 1 |
| author | Sakwe, Sakwe Aloysius |
| author_facet | Sakwe, Sakwe Aloysius |
| author_role | aut |
| author_sort | Sakwe, Sakwe Aloysius |
| author_variant | s a s sa sas |
| building | Verbundindex |
| bvnumber | BV035050373 |
| classification_rvk | UQ 2160 UQ 2400 UQ 8500 ZM 7060 |
| ctrlnum | (OCoLC)550581909 (DE-599)DNB989883353 |
| dewey-full | 537.6226 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6226 |
| dewey-search | 537.6226 |
| dewey-sort | 3537.6226 |
| dewey-tens | 530 - Physics |
| discipline | Maschinenbau / Maschinenwesen Physik Werkstoffwissenschaften / Fertigungstechnik |
| discipline_str_mv | Maschinenbau / Maschinenwesen Physik Werkstoffwissenschaften / Fertigungstechnik |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02211nam a2200529 c 4500</leader><controlfield tag="001">BV035050373</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">080912s2008 ad|| m||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">08,A37,0924</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">989883353</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783832274245</subfield><subfield code="c">kart. : EUR 48.80 (DE), EUR 48.80 (AT), sfr 97.60 (freier Pr.)</subfield><subfield code="9">978-3-8322-7424-5</subfield></datafield><datafield tag="024" ind1="3" ind2=" "><subfield code="a">9783832274245</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)550581909</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB989883353</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29</subfield><subfield code="a">DE-29T</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.6226</subfield><subfield code="2">22/ger</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.6226</subfield><subfield code="2">22//ger</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UQ 2160</subfield><subfield code="0">(DE-625)146487:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UQ 2400</subfield><subfield code="0">(DE-625)146493:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UQ 8500</subfield><subfield code="0">(DE-625)146599:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZM 7060</subfield><subfield code="0">(DE-625)157108:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">530</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">620</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Sakwe, Sakwe Aloysius</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method</subfield><subfield code="c">Sakwe Aloysius Sakwe</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Aachen</subfield><subfield code="b">Shaker</subfield><subfield code="c">2008</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">188 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield><subfield code="c">21 cm, 233 gr.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Berichte aus der Halbleitertechnik</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: Erlangen, Nürnberg, Univ., Diss., 2007</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Siliciumcarbid - Kristallzüchtung - Versetzung <Kristallographie></subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Kristallzüchtung</subfield><subfield code="0">(DE-588)4140616-3</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Versetzung</subfield><subfield code="g">Kristallographie</subfield><subfield code="0">(DE-588)4187993-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Kristallzüchtung</subfield><subfield code="0">(DE-588)4140616-3</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Versetzung</subfield><subfield code="g">Kristallographie</subfield><subfield code="0">(DE-588)4187993-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016719063&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-016719063</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV035050373 |
| illustrated | Illustrated |
| index_date | 2024-07-02T21:56:20Z |
| indexdate | 2024-07-09T21:21:04Z |
| institution | BVB |
| isbn | 9783832274245 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-016719063 |
| oclc_num | 550581909 |
| open_access_boolean | |
| owner | DE-29 DE-29T |
| owner_facet | DE-29 DE-29T |
| physical | 188 S. Ill., graph. Darst. 21 cm, 233 gr. |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | Shaker |
| record_format | marc |
| series2 | Berichte aus der Halbleitertechnik |
| spelling | Sakwe, Sakwe Aloysius Verfasser aut Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method Sakwe Aloysius Sakwe Aachen Shaker 2008 188 S. Ill., graph. Darst. 21 cm, 233 gr. txt rdacontent n rdamedia nc rdacarrier Berichte aus der Halbleitertechnik Zugl.: Erlangen, Nürnberg, Univ., Diss., 2007 Siliciumcarbid - Kristallzüchtung - Versetzung <Kristallographie> Kristallzüchtung (DE-588)4140616-3 gnd rswk-swf Versetzung Kristallographie (DE-588)4187993-4 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Siliciumcarbid (DE-588)4055009-6 s Kristallzüchtung (DE-588)4140616-3 s Versetzung Kristallographie (DE-588)4187993-4 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016719063&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Sakwe, Sakwe Aloysius Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method Siliciumcarbid - Kristallzüchtung - Versetzung <Kristallographie> Kristallzüchtung (DE-588)4140616-3 gnd Versetzung Kristallographie (DE-588)4187993-4 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4140616-3 (DE-588)4187993-4 (DE-588)4055009-6 (DE-588)4113937-9 |
| title | Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method |
| title_auth | Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method |
| title_exact_search | Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method |
| title_exact_search_txtP | Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method |
| title_full | Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method Sakwe Aloysius Sakwe |
| title_fullStr | Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method Sakwe Aloysius Sakwe |
| title_full_unstemmed | Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method Sakwe Aloysius Sakwe |
| title_short | Formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method |
| title_sort | formation and properties of dislocations during crystal growth of bulk silicon carbide by the physical vapor transport method |
| topic | Siliciumcarbid - Kristallzüchtung - Versetzung <Kristallographie> Kristallzüchtung (DE-588)4140616-3 gnd Versetzung Kristallographie (DE-588)4187993-4 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Siliciumcarbid - Kristallzüchtung - Versetzung <Kristallographie> Kristallzüchtung Versetzung Kristallographie Siliciumcarbid Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016719063&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT sakwesakwealoysius formationandpropertiesofdislocationsduringcrystalgrowthofbulksiliconcarbidebythephysicalvaportransportmethod |