Strained silicon and silicon-germanium nanowire tunnel FETs and inverters:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Jülich
Forschungszentrum Jülich, Zentralbibliothek
2014
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| Schriftenreihe: | Schriften des Forschungszentrums Jülich
Reihe Information ; 40 |
| Schlagworte: | |
| Online-Zugang: | Inhaltstext Inhaltsverzeichnis |
| Beschreibung: | III, 117 S. Ill., graph. Darst. |
| ISBN: | 9783958060029 |
Internformat
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Datensatz im Suchindex
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CONTENTS
1 INTRODUCTION 1
2 THEORETICAL BACKGROUND 5
2.1 POWER CONSUMPTION IN INTEGRATED CIRCUITS 5
2.2 MOSFET 6
2.2.1 SUBTHRESHOLD CHARACTERISTICS 6
2.3 TUNNEL FIELD-EFFECT TRANSISTOR 7
2.3.1 BAND-TO-BAND TUNNELING 8
2.3.2 SUBTHRESHOLD CHARACTERISTICS 10
2.3.3 AMBIPOLARITY 11
2.3.4 TRAP ASSISTED TUNNELING 12
2.3.5 PHONON-ABSORPTION ASSISTED TUNNELING 12
2.3.6 SHOCKLEY-READ-HALL RECOMBINATION 13
2.3.7 DRAIN INDUCED BARRIER THINNING 14
2.4 TFET DESIGN CONSIDERATIONS 15
2.4.1 MULTI-GATE STRUCTURES 15
2.4.2 HIGH-ZC GATE DIELECTRICS 17
2.4.3 DENSITY OF INTERFACE AND OXIDE STATES 17
3 STRAINED SOI NANOWIRE TFET 21
3.1 DEVICE FABRICATION 21
3.2 UNIAXIAL NW STRAIN 25
3.3 CURRENT-VOLTAGE CHARACTERISTICS OF NW TFET AND MOSFET 26
3.4 TFET PERFORMANCE 31
3.4.1 NW CROSS-SECTION AND GATE LENGTH 32
3.4.2 DOPING PROFILES 34
3.4.3 HOT CARRIER EFFECTS IN TUNNEL JUNCTIONS 36
3.5 LOW TEMPERATURE I-V CHARACTERISTICS 38
3.6 CONCLUSION 42
HTTP://D-NB.INFO/1065757883
CONTENTS
4 SIGE HOMOSTRUCTURE NW TFET 43
4.1 STRAINED SIGE ON SOI SUBSTRATE 43
4.2 SIGE ON SOI NW TFET FABRICATION 44
4.3 HIGH-K/METAL GATE STACK ON SIGE 46
4.4 DENSITY OF INTERFACE STATES 47
4.5 I-V CHARACTERIZATION 49
4.6 TEMPERATURE DEPENDENT MEASUREMENTS 51
4.6.1 TRAP ASSISTED TUNNELING 51
4.6.2 BAND GAP EXTRACTION FROM SRH CURRENT 51
4.7 CONCLUSION 54
5 SIGE/SI HETEROSTRUCTURE NW TFET 55
5.1 HETEROSTRUCTURE TFET CONCEPT 55
5.2 SUBSTRATE AND DEVICE STRUCTURE 57
5.3 DEVICE FABRICATION 59
5.4 DEVICE CHARACTERIZATION 60
5.4.1 TRANSFER AND OUTPUT CHARACTERISTICS 60
5.4.2 INCREASED TUNNEL-JUNCTION AREA 62
5.4.3 TEMPERATURE DEPENDENCE 63
5.4.4 REDUCTION OF AMBIPOLARITY 64
5.5 DEVICE SIMULATION 65
5.5.1 TCAD SENTAURUS 65
5.5.2 POINT AND LINE TUNNELING 65
5.6 CONCLUSION 69
6 LOGIC APPLICATION 71
6.1 THE INVERTER 71
6.2 VOLTAGE TRANSFER CHARACTERISTICS 74
6.2.1 MOSFET INVERTER 74
6.2.2 TFET INVERTER 76
6.3 INVERTER SUPPLY CURRENT 77
6.4 EMULATED HETEROSTRUCTURE TFET INVERTER 79
6.5 CONCLUSION 82
7 LOW FREQUENCY NOISE 85
7.1 MEASUREMENT SETUP 85
7.2 LFN MEASUREMENTS 86
7.2.1 MOSFET 87
7.2.2 TFET 89
II
CONTENTS
7.2.3 IN-SITU DOPED TUNNEL JUNCTION 93
7.3 LITERATURE COMPARISON 95
7.4 CONCLUSION 95
8 CONCLUSION AND OUTLOOK 97
BIBLIOGRAPHY 100
LIST OF PUBLICATIONS 110
CURRICULUM VITAE 115
ACKNOWLEDGMENTS 116
III |
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| author | Richter, Simon 1983- |
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| dewey-full | 621.3815284 |
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| dewey-search | 621.3815284 |
| dewey-sort | 3621.3815284 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik Geographie |
| format | Thesis Book |
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| illustrated | Illustrated |
| indexdate | 2024-09-10T01:39:48Z |
| institution | BVB |
| isbn | 9783958060029 |
| language | English |
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| physical | III, 117 S. Ill., graph. Darst. |
| publishDate | 2014 |
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| series2 | Schriften des Forschungszentrums Jülich : Reihe Information |
| spelling | Richter, Simon 1983- Verfasser (DE-588)1058327194 aut Strained silicon and silicon-germanium nanowire tunnel FETs and inverters Simon Richter Jülich Forschungszentrum Jülich, Zentralbibliothek 2014 III, 117 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Schriften des Forschungszentrums Jülich : Reihe Information 40 Zugl.: Aachen, RWTH Aachen Univ., Diss., 2014 (DE-588)4113937-9 Hochschulschrift gnd-content Schriften des Forschungszentrums Jülich Reihe Information ; 40 (DE-604)BV035800087 40 X:MVB text/html http://deposit.dnb.de/cgi-bin/dokserv?id=5138684&prov=M&dok_var=1&dok_ext=htm Inhaltstext DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027862372&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Richter, Simon 1983- Strained silicon and silicon-germanium nanowire tunnel FETs and inverters Schriften des Forschungszentrums Jülich |
| subject_GND | (DE-588)4113937-9 |
| title | Strained silicon and silicon-germanium nanowire tunnel FETs and inverters |
| title_auth | Strained silicon and silicon-germanium nanowire tunnel FETs and inverters |
| title_exact_search | Strained silicon and silicon-germanium nanowire tunnel FETs and inverters |
| title_full | Strained silicon and silicon-germanium nanowire tunnel FETs and inverters Simon Richter |
| title_fullStr | Strained silicon and silicon-germanium nanowire tunnel FETs and inverters Simon Richter |
| title_full_unstemmed | Strained silicon and silicon-germanium nanowire tunnel FETs and inverters Simon Richter |
| title_short | Strained silicon and silicon-germanium nanowire tunnel FETs and inverters |
| title_sort | strained silicon and silicon germanium nanowire tunnel fets and inverters |
| topic_facet | Hochschulschrift |
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