Hot carrier effects in MOS devices:
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
San Diego [u.a.]
Academic Press
1995
|
| Schlagworte: | |
| Beschreibung: | Literaturverz. S. 187 - 301 |
| Beschreibung: | XII, 312 S.: graph. Darst. |
| ISBN: | 0126822409 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV011058344 | ||
| 003 | DE-604 | ||
| 005 | 20090825 | ||
| 007 | t | ||
| 008 | 961113s1995 |||| 00||| engod | ||
| 020 | |a 0126822409 |9 0-12-682240-9 | ||
| 035 | |a (OCoLC)32738829 | ||
| 035 | |a (DE-599)BVBBV011058344 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91 |a DE-1050 |a DE-706 | ||
| 050 | 0 | |a TK7871.99.M44 | |
| 082 | 0 | |a 537.6/225 |2 20 | |
| 084 | |a ELT 358f |2 stub | ||
| 100 | 1 | |a Takeda, Eiji |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Hot carrier effects in MOS devices |c Eji Takeda; Cary Y. Yang; Akemi Miura-Hamada |
| 246 | 1 | 3 | |a Hot-carrier effects in MOS devices |
| 264 | 1 | |a San Diego [u.a.] |b Academic Press |c 1995 | |
| 300 | |a XII, 312 S.: graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 500 | |a Literaturverz. S. 187 - 301 | ||
| 650 | 4 | |a Hot carriers | |
| 650 | 4 | |a Metal oxide semiconductors | |
| 650 | 0 | 7 | |a Heißes Elektron |0 (DE-588)4159455-1 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a MOS-Schaltung |0 (DE-588)4135571-4 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a MOS-Schaltung |0 (DE-588)4135571-4 |D s |
| 689 | 0 | 1 | |a Heißes Elektron |0 (DE-588)4159455-1 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Yang, Cary Y. |e Verfasser |4 aut | |
| 700 | 1 | |a Miura-Hamada, Akemi |e Verfasser |4 aut | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-007405906 | ||
Datensatz im Suchindex
| _version_ | 1804125546973495296 |
|---|---|
| any_adam_object | |
| author | Takeda, Eiji Yang, Cary Y. Miura-Hamada, Akemi |
| author_facet | Takeda, Eiji Yang, Cary Y. Miura-Hamada, Akemi |
| author_role | aut aut aut |
| author_sort | Takeda, Eiji |
| author_variant | e t et c y y cy cyy a m h amh |
| building | Verbundindex |
| bvnumber | BV011058344 |
| callnumber-first | T - Technology |
| callnumber-label | TK7871 |
| callnumber-raw | TK7871.99.M44 |
| callnumber-search | TK7871.99.M44 |
| callnumber-sort | TK 47871.99 M44 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| classification_tum | ELT 358f |
| ctrlnum | (OCoLC)32738829 (DE-599)BVBBV011058344 |
| dewey-full | 537.6/225 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6/225 |
| dewey-search | 537.6/225 |
| dewey-sort | 3537.6 3225 |
| dewey-tens | 530 - Physics |
| discipline | Physik Elektrotechnik |
| format | Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01374nam a2200421 c 4500</leader><controlfield tag="001">BV011058344</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20090825 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">961113s1995 |||| 00||| engod</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">0126822409</subfield><subfield code="9">0-12-682240-9</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)32738829</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV011058344</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91</subfield><subfield code="a">DE-1050</subfield><subfield code="a">DE-706</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TK7871.99.M44</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.6/225</subfield><subfield code="2">20</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ELT 358f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Takeda, Eiji</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Hot carrier effects in MOS devices</subfield><subfield code="c">Eji Takeda; Cary Y. Yang; Akemi Miura-Hamada</subfield></datafield><datafield tag="246" ind1="1" ind2="3"><subfield code="a">Hot-carrier effects in MOS devices</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">San Diego [u.a.]</subfield><subfield code="b">Academic Press</subfield><subfield code="c">1995</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XII, 312 S.: graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturverz. S. 187 - 301</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Hot carriers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metal oxide semiconductors</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heißes Elektron</subfield><subfield code="0">(DE-588)4159455-1</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-Schaltung</subfield><subfield code="0">(DE-588)4135571-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS-Schaltung</subfield><subfield code="0">(DE-588)4135571-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Heißes Elektron</subfield><subfield code="0">(DE-588)4159455-1</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yang, Cary Y.</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Miura-Hamada, Akemi</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-007405906</subfield></datafield></record></collection> |
| id | DE-604.BV011058344 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-09T18:03:17Z |
| institution | BVB |
| isbn | 0126822409 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-007405906 |
| oclc_num | 32738829 |
| open_access_boolean | |
| owner | DE-91 DE-BY-TUM DE-1050 DE-706 |
| owner_facet | DE-91 DE-BY-TUM DE-1050 DE-706 |
| physical | XII, 312 S.: graph. Darst. |
| publishDate | 1995 |
| publishDateSearch | 1995 |
| publishDateSort | 1995 |
| publisher | Academic Press |
| record_format | marc |
| spelling | Takeda, Eiji Verfasser aut Hot carrier effects in MOS devices Eji Takeda; Cary Y. Yang; Akemi Miura-Hamada Hot-carrier effects in MOS devices San Diego [u.a.] Academic Press 1995 XII, 312 S.: graph. Darst. txt rdacontent n rdamedia nc rdacarrier Literaturverz. S. 187 - 301 Hot carriers Metal oxide semiconductors Heißes Elektron (DE-588)4159455-1 gnd rswk-swf MOS-Schaltung (DE-588)4135571-4 gnd rswk-swf MOS-Schaltung (DE-588)4135571-4 s Heißes Elektron (DE-588)4159455-1 s DE-604 Yang, Cary Y. Verfasser aut Miura-Hamada, Akemi Verfasser aut |
| spellingShingle | Takeda, Eiji Yang, Cary Y. Miura-Hamada, Akemi Hot carrier effects in MOS devices Hot carriers Metal oxide semiconductors Heißes Elektron (DE-588)4159455-1 gnd MOS-Schaltung (DE-588)4135571-4 gnd |
| subject_GND | (DE-588)4159455-1 (DE-588)4135571-4 |
| title | Hot carrier effects in MOS devices |
| title_alt | Hot-carrier effects in MOS devices |
| title_auth | Hot carrier effects in MOS devices |
| title_exact_search | Hot carrier effects in MOS devices |
| title_full | Hot carrier effects in MOS devices Eji Takeda; Cary Y. Yang; Akemi Miura-Hamada |
| title_fullStr | Hot carrier effects in MOS devices Eji Takeda; Cary Y. Yang; Akemi Miura-Hamada |
| title_full_unstemmed | Hot carrier effects in MOS devices Eji Takeda; Cary Y. Yang; Akemi Miura-Hamada |
| title_short | Hot carrier effects in MOS devices |
| title_sort | hot carrier effects in mos devices |
| topic | Hot carriers Metal oxide semiconductors Heißes Elektron (DE-588)4159455-1 gnd MOS-Schaltung (DE-588)4135571-4 gnd |
| topic_facet | Hot carriers Metal oxide semiconductors Heißes Elektron MOS-Schaltung |
| work_keys_str_mv | AT takedaeiji hotcarriereffectsinmosdevices AT yangcaryy hotcarriereffectsinmosdevices AT miurahamadaakemi hotcarriereffectsinmosdevices |