GaAs based nanowires on silicon - growth and quantum confinement phenomena:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Garching
Verein zur Förderung des Walter Schootky Instituts der Technischen Universität München e. V.
2017
|
| Ausgabe: | 1. Auflage |
| Schriftenreihe: | Selected topics on semiconductor physics and technology
Vol. 202 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | X, 180 Seiten Illustrationen, Diagramme |
| ISBN: | 9783946379027 |
Internformat
MARC
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| 100 | 1 | |a Loitsch, Bernhard |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a GaAs based nanowires on silicon - growth and quantum confinement phenomena |c Bernhard Loitsch |
| 250 | |a 1. Auflage | ||
| 264 | 1 | |a Garching |b Verein zur Förderung des Walter Schootky Instituts der Technischen Universität München e. V. |c 2017 | |
| 300 | |a X, 180 Seiten |b Illustrationen, Diagramme | ||
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| 490 | 1 | |a Selected topics on semiconductor physics and technology |v Vol. 202 | |
| 502 | |b Dissertation |c Technische Universität München |d 2017 | ||
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Datensatz im Suchindex
| _version_ | 1804177595746484224 |
|---|---|
| adam_text | CONTENTS
ABSTRACT J
KURZFASSUNG V
1. INTRODUCTION 1
2. GROWTH OF GAAS-AIGAAS NANOWIRE HETEROSTRUCTURES ON SILICON 7
2.1. SELF-CATALYZED GAAS NANOWIRES ON SILICON SUBSTRATE
..................................
8
2.1.1. MOLECULAR BEAM EPITAXY
.
................................................................
8
2.1.2. SUBSTRATE PREPARATION
........................................................................10
2.1.3. VARIATION OF THE NANOWIRE GROWTH TE M P ERATU RE
............................
12
2.2. ALGAAS SHELL
HETEROSTRUCTURES........................................................................23
2.2.1. RADIAL GAAS QUANTUM W E LLS
........................................... 24
2.2.2. QUANTUM WELL BASED NANOWIRE LA S E R
..............................................
30
2.3. SUMMARY AND
CONCLUSION.................................................................................33
3. ALLOY FLUCTUATIONS IN GAAS-AIGAAS CORE-SHELL NANOWIRES 35
3.1. ALLOY FLUCTUATIONS IN SEMICONDUCTOR ALLOYS
.................................................. 36
3.2. SHARP LINE PL EMISSION FROM GAAS-ALGAAS CORE SHELL NANOWIRES ....
38
3.3. ATOM PROBE TOM
OGRAPHY.................................................................................39
3.4. SIMULATION OF CLUSTER-INDUCED OPTICAL TRANSITION ENERGIES
............................
46
3.5. CORRELATION OF CLUSTER SIZE AND EMISSSION SP E CTRU M
......................................49
3.6. INTERACTION BETWEEN ADJACENT C LU S TE RS
...........................................................
51
3.7. SUPPRESSION OF ALLOY FLUCTUATIONS VIA SHELL GROWTH TE M P E RA TU
RE
................
54
3.7.1. INFLUENCE OF GROWTH TEMPERATURE ON PHOTOLUM
INESCENCE..................55
3.7.2. STRUCTURAL AND COMPOSITIONAL
ANALYSIS...............................................65
3.8. CORRELATION OF LOCAL ALLOY COMPOSITION AND CRYSTAL STRU C TU RE
......................
71
3.9. SUMMARY AND CONCLUSION
..............................................................................74
4. RADIAL QUANTUM CONFINEMENT IN ULTRATHIN GAAS NANOWIRES 77
4.1. NANOWIRES IN THE ID CONFINEMENT RE G IM E
....................................................77
4.2. REVERSE-REACTION G R O W T H
..................................................................................79
4.3. SURFACE PASSIVATION VIA ALGAAS SHELL OVERGROWTH
.........................................
85
4.3.1. RAMAN SPECTROSCOPY
...........................................................................
88
4.4. PHOTOLUMINESCENCE
SPECTROSCOPY.....................................................................
90
4.4.1. DIRECT CORRELATION OF PL AND TEM
...............................................90
4.4.2. BLUESHIFT OF PL DUE TO QUANTUM CONFINEMENT
....................................
91
4.5. SUMMARY AND
CONCLUSION..................................................................................94
5. CRYSTAL PHASE QUANTUM DOTS IN ULTRATHIN GAAS NANOWIRES 97
5.1. QUANTUM DOTS IN N A N O W IRE S
...........................................................................
97
5.2. CORRELATION OF LUMINESCENCE AND CRYSTAL S TR U C T U R E
......................................
99
5.2.1. PHOTOLUMINESCENCE AND TRANSMISSION ELECTRON MICROSCOPY . . . .100
5.2.2.
CATHODOLUMINESCENCE..........................................................................102
5.3. AXIALLY LOCALIZED
EXCITONS................................................................................110
5.4. PHOTOLUMINESCENCE-EXCITATION
SPECTROSCOPY.................................................114
5.5. TIME-RESOLVED PHOTOLUM INESCENCE
................................................................
117
5.6. AUTOCORRELATION MEASUREMENT OF A SINGLE QUANTUM D O T
..............................
120
5.7. TEMPERATURE DEPENDENT
PHOTOLUMINESCENCE.................................................122
5.7.1. THERMALLY ACTIVATED DIFFUSION BETWEEN CP Q D
S................................123
5.7.2. PHONON BROADENING OF THE LINEW
IDTH.................................................128
5.7.3. VARSHNI SH
IFT.........................................................................................
129
5.8. SUMMARY AND
CONCLUSION................................................................................130
6. OUTLOOK 133
A. RATE EQUATION MODEL FOR THE TEMPERATURE DEPENDENCE 137
B. LIST OF SAMPLES 141
BIBLIOGRAPHY 144
LIST OF ABBREVIATIONS 165
LIST OF FIGURES 168
LIST OF PUBLICATIONS 170
ACKNOWLEDGMENTS 175
|
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| indexdate | 2024-07-10T07:50:35Z |
| institution | BVB |
| isbn | 9783946379027 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-029756189 |
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| physical | X, 180 Seiten Illustrationen, Diagramme |
| publishDate | 2017 |
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| publishDateSort | 2017 |
| publisher | Verein zur Förderung des Walter Schootky Instituts der Technischen Universität München e. V. |
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| series2 | Selected topics on semiconductor physics and technology |
| spelling | Loitsch, Bernhard Verfasser aut GaAs based nanowires on silicon - growth and quantum confinement phenomena Bernhard Loitsch 1. Auflage Garching Verein zur Förderung des Walter Schootky Instituts der Technischen Universität München e. V. 2017 X, 180 Seiten Illustrationen, Diagramme txt rdacontent n rdamedia nc rdacarrier Selected topics on semiconductor physics and technology Vol. 202 Dissertation Technische Universität München 2017 (DE-588)4113937-9 Hochschulschrift gnd-content Selected topics on semiconductor physics and technology Vol. 202 (DE-604)BV011499438 202 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029756189&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Loitsch, Bernhard GaAs based nanowires on silicon - growth and quantum confinement phenomena Selected topics on semiconductor physics and technology |
| subject_GND | (DE-588)4113937-9 |
| title | GaAs based nanowires on silicon - growth and quantum confinement phenomena |
| title_auth | GaAs based nanowires on silicon - growth and quantum confinement phenomena |
| title_exact_search | GaAs based nanowires on silicon - growth and quantum confinement phenomena |
| title_full | GaAs based nanowires on silicon - growth and quantum confinement phenomena Bernhard Loitsch |
| title_fullStr | GaAs based nanowires on silicon - growth and quantum confinement phenomena Bernhard Loitsch |
| title_full_unstemmed | GaAs based nanowires on silicon - growth and quantum confinement phenomena Bernhard Loitsch |
| title_short | GaAs based nanowires on silicon - growth and quantum confinement phenomena |
| title_sort | gaas based nanowires on silicon growth and quantum confinement phenomena |
| topic_facet | Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=029756189&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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