Holdings: Modeling and Verification of 4H-SiC Trench MOS Integration using Trench-First-Technology

Modeling and Verification of 4H-SiC Trench MOS Integration using Trench-First-Technology:

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Bibliographic Details
Main Author:	Lim, Minwho (Author)
Format:	Thesis Electronic eBook
Language:	English
Published:	Erlangen ; Nürnberg Friedrich-Alexander-Universität Erlangen-Nürnberg 2023
Subjects:	Siliciumcarbid Silicium Ionenimplantation MOS-FET MOS Halbleitertechnologie Hochschulschrift
Online Access:	Volltext Volltext Volltext
Physical Description:	1 Online-Ressource Illustrationen, Diagramme
DOI:	10.25593/open-fau-64

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spelling	Lim, Minwho (DE-588)1324175508 aut Modeling and Verification of 4H-SiC Trench MOS Integration using Trench-First-Technology vorgelegt von Minwho Lim Modellierung und Verifikation der Integration von 4H-SiC Leistungs-MOSFET mit Graben-Zuerst-Technologie Erlangen ; Nürnberg Friedrich-Alexander-Universität Erlangen-Nürnberg 2023 1 Online-Ressource Illustrationen, Diagramme txt rdacontent c rdamedia cr rdacarrier Dissertation Friedrich-Alexander-Universität Erlangen-Nürnberg 2023 Archivierung/Langzeitarchivierung gewährleistet DE-101 pdager 4\p Siliciumcarbid (DE-588)4055009-6 gnd 5\p Silicium (DE-588)4077445-4 gnd 6\p Ionenimplantation (DE-588)4027606-5 gnd 7\p MOS-FET (DE-588)4207266-9 gnd 8\p MOS (DE-588)4130209-6 gnd 9\p Halbleitertechnologie (DE-588)4158814-9 gnd (DE-588)4113937-9 Hochschulschrift gnd-content https://open.fau.de/handle/openfau/30120 Verlag kostenfrei Volltext https://doi.org/10.25593/open-fau-64 Resolving-System kostenfrei Volltext https://d-nb.info/1322293864/34 Langzeitarchivierung Nationalbibliothek kostenfrei Volltext 1\p emakn 0,55663 20240303 DE-101 https://d-nb.info/provenance/plan#emakn 2\p emasg 0,61134 20240303 DE-101 https://d-nb.info/provenance/plan#emasg 3\p npi 20240302 DE-101 https://d-nb.info/provenance/plan#npi 4\p emagnd 0,59257 20240303 DE-101 https://d-nb.info/provenance/plan#emagnd 5\p emagnd 0,16517 20240303 DE-101 https://d-nb.info/provenance/plan#emagnd 6\p emagnd 0,12700 20240303 DE-101 https://d-nb.info/provenance/plan#emagnd 7\p emagnd 0,11704 20240303 DE-101 https://d-nb.info/provenance/plan#emagnd 8\p emagnd 0,09821 20240303 DE-101 https://d-nb.info/provenance/plan#emagnd 9\p emagnd 0,05713 20240303 DE-101 https://d-nb.info/provenance/plan#emagnd
spellingShingle	Lim, Minwho Modeling and Verification of 4H-SiC Trench MOS Integration using Trench-First-Technology 4\p Siliciumcarbid (DE-588)4055009-6 gnd 5\p Silicium (DE-588)4077445-4 gnd 6\p Ionenimplantation (DE-588)4027606-5 gnd 7\p MOS-FET (DE-588)4207266-9 gnd 8\p MOS (DE-588)4130209-6 gnd 9\p Halbleitertechnologie (DE-588)4158814-9 gnd
subject_GND	(DE-588)4055009-6 (DE-588)4077445-4 (DE-588)4027606-5 (DE-588)4207266-9 (DE-588)4130209-6 (DE-588)4158814-9 (DE-588)4113937-9
title	Modeling and Verification of 4H-SiC Trench MOS Integration using Trench-First-Technology
title_alt	Modellierung und Verifikation der Integration von 4H-SiC Leistungs-MOSFET mit Graben-Zuerst-Technologie
title_auth	Modeling and Verification of 4H-SiC Trench MOS Integration using Trench-First-Technology
title_exact_search	Modeling and Verification of 4H-SiC Trench MOS Integration using Trench-First-Technology
title_exact_search_txtP	Modeling and Verification of 4H-SiC Trench MOS Integration using Trench-First-Technology
title_full	Modeling and Verification of 4H-SiC Trench MOS Integration using Trench-First-Technology vorgelegt von Minwho Lim
title_fullStr	Modeling and Verification of 4H-SiC Trench MOS Integration using Trench-First-Technology vorgelegt von Minwho Lim
title_full_unstemmed	Modeling and Verification of 4H-SiC Trench MOS Integration using Trench-First-Technology vorgelegt von Minwho Lim
title_short	Modeling and Verification of 4H-SiC Trench MOS Integration using Trench-First-Technology
title_sort	modeling and verification of 4h sic trench mos integration using trench first technology
topic	4\p Siliciumcarbid (DE-588)4055009-6 gnd 5\p Silicium (DE-588)4077445-4 gnd 6\p Ionenimplantation (DE-588)4027606-5 gnd 7\p MOS-FET (DE-588)4207266-9 gnd 8\p MOS (DE-588)4130209-6 gnd 9\p Halbleitertechnologie (DE-588)4158814-9 gnd
topic_facet	Siliciumcarbid Silicium Ionenimplantation MOS-FET MOS Halbleitertechnologie Hochschulschrift
url	https://open.fau.de/handle/openfau/30120 https://doi.org/10.25593/open-fau-64 https://d-nb.info/1322293864/34
work_keys_str_mv	AT limminwho modelingandverificationof4hsictrenchmosintegrationusingtrenchfirsttechnology AT limminwho modellierungundverifikationderintegrationvon4hsicleistungsmosfetmitgrabenzuersttechnologie

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