Semiconductor devices: physics and technology
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Book |
| Language: | English |
| Published: |
Hoboken, NJ
Wiley
2013
|
| Edition: | 3. ed., international student version |
| Subjects: | |
| Online Access: | Inhaltsverzeichnis Klappentext |
| Physical Description: | IX, 582 S. Ill., graph. Darst. 26 cm |
| ISBN: | 0470537949 9780470873670 |
Staff View
MARC
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| adam_text | Contents
Preface
vii
►
CHAPTER
4
Acknowledgments
ix
Bipolar Transistors and Related Devices
123
►
CHAPTER
0
1
4.1
Transistor Action
124
Introduction
4.2
Static Characteristics of Bipolar Transistors
129
0.1
Semiconductor Devices
1
4.3
Frequency Response and Switching of
0.2
Semiconductor Technology
6
Bipolar Transistors
137
Summary
12
4.4 Nonideal
Effects
142
4.5
Heterojunction Bipolar Transistors
146
PARTI
4.6 Thyristors
and Related Power Devices
149
SEMICONDUCTOR PHYSICS
Summary
155
►
CHAPTER
1
►
CHAPTER
5
Energy Bands and Carrier Concentration in
MOS
Capacitor and MOSFET
161
Thermal Equilibrium
15
5.1
Ideal
MOS
Capacitor
161
I
.
I Semiconductor Materials
15
5.2
SiO:-Si
MOS
Capacitor
170
1
.2
Basic Crystal Structures
17
5.3
Carrier Transport in
MOS
Capacitors
175
1.3 Valence Bonds
22
5.4
Charge-Coupled Devices
(CCD)
178
1
.4
Energy Bands
23
5.5
MOSFET Fundamentals
181
1
.5
Intrinsic Carrier Concentration
29
Summary
193
1
.6
Donors and Acceptors
34
Summary
40
►
CHAPTER
6
Advanced MOSFET and Related Devices
196
►
CHAPTER
2
6.1
MOSFET Scaling
196
Carrier Transport Phenomena
43
6.2
CMOS and BiCMOS
206
2.
1 Carrier Drift
43
6.3
MOSFET on Insulator
211
2.2
Carrier Diffusion
53
6.4
MOS
Memory Structures
215
2,3
Generation and Recombination Processes
56
6.5
Power MOSFET
224
2.4
Continuity Equation
62
Summary
225
2.5
Thermionic Emission Process
68
2.6
Tunneling Process
69
►
CHAPTER
7
2.7
Space-Charee Effect
71
MESFET and Related Devices
230
2.8
High-Field Effects
73
7.1
Metal-Semiconductor Contacts
231
Summary
77
7.2
MESFET
242
7.3
MODFET
251
PART II
Summary
257
SEMICONDUCTOR DEVICES
►
CHAPTER
8
►
CHAPTERS
Microwave Diodes; Quantum-Effect and
p
-п
Junction
82
Hot-Electron Devices
260
3.
1 Thermal Equilibrium Condition
83
8.1
Microwave Frequency Bands
261
3.2
Depletion Region
87
8.2
Tunnel Diode
262
3.3
Depletion Capacitance
95
8.3
IMPATT Diode
262
3.4
Current-Voltage Characteristics
99
8.4
Transferred-Electron Devices
267
3.5
Charge Storage and Transient Behavior
108
8.5
Quantum-Effect Devices
271
3.6
Junction Breakdown
111
8.6
Hot-Electron Devices
276
3.
Heterojunction
117
Summary
279
Summan
120
►
CHAPTER
9
14.4
Range of Implanted Ions
488
Light
Emitting Diodes and Lasers
283
14.5
Implant Damage and Annealing
495
9.1
Radiative Transitions and Optical Absorption
283
14.6
Implantation-Related Processes
500
9.2
Light-Emitting Diodes
289
Summary
506
9.3
Various Light-Emitting Diodes
9.4
Semiconductor Lasers
294
305
►
CHAPTERS
Summary
322
Integrated Devices
511
15.1
Passive Components
513
►
CHAPTER
10
15.2
Bipolar Technology
517
Photodetectors and Solar Cells
326
15.3
MOSFET Technology
522
10.1
Photodetectors
326
15.4
MESFET Technology
535
10.2
Solar Cells
339
15.5
Challenges for Nanoelectronics
538
10.3
Silicon and Compound-Semiconductor Solar Cells
346
Summary
543
10.4
Third-Generation Solar Cells
351
10.5
Optical Concentration
Summary
355
355
►
APPENDIX A
List of Symbols
547
PART III
►
APPENDIX
В
International Systems of Units (SI Units)
549
SEMICONDUCTOR TECHNOLOGY
►
APPENDIX
С
►
CHAPTER
11
Unit Prefixes
550
Crystal Growth and Epitaxy
360
1
.1
Silicon Crystal Growth from the Melt
360
►
APPENDIX
D
1
.2
Silicon Float-Zone
Proces
366
Greek Alphabet
551
1
.3
GaAs Crystal-Growth Techniques
370
1
.4
Material Characterization
373
► APPENDIXE
1
.5
Epitaxial-Growth Techniques
380
Physical Constants
552
1
.6
Structures and Defects in Epitaxial
Layers
isiimrriMrv
387
391
►
APPENDIX
F
Properties of Important Element and Binary
*
j LF
ЛММ ЛЛ
И
4
Compound Semiconductors at
300
К
553
►
CHAPTERS
Film Formation
395
►
APPENDIX
G
12.1
Thermal Oxidation
395
Properties of Si and GaAs at
300
К
554
12.2
Chemical Vapor Deposition of Dielectrics
403
►
APPENDIX
H
12.3
Chemical Vapor Deposition of Polysilicon
412
Derivation of the Density of States in a Semiconductor
555
12.4
Atom Layer Deposition
415
12.5
Metallization
417
►
APPENDIX
1
Summary
428
Derivation of Recombination Rate for Indirect
Recombination
559
►
CHAPTER
13
Lithography and Etching
432
►
APPENDIX
J
13.
1 Optical Lithography
432
Calculation of the Transmission Coefficient for
13.2
Next-Generation Lithographic Methods
445
a Symmetric Resonant-Tunneling Diode
561
13.3
Wet Chemical Etching
451
13.4
Dry Etching
454
►
APPENDIX
К
Summan
466
Basic Kinetic Theory of Gases
563
►
CHAPTER
14
►
APPENDIX
L
Impurity Doping
471
Answers to Selected Problems
565
14.1
Basic Diffusion Process
472
14.2
Extrinsic Diffusion
481
Photo credits
568
14.3
Diffusion-Related Processes
485
Index
569
VI
Semiconductor Devices
offers an introduction to physical principles of
modern semiconductor devices and their advanced fabrication technology.
The Third Edition presents students with theoretical and practical aspects of
every step in device characterizations and fabrication, with an emphasis
on integrated circuits. The three parts of the text covers the basic properties
of semiconductor materials emphasizing silicon and gallium arsenide: the
physics and characteristics of semiconductor devices; bipolar, unipolar special
microwave and photonic devices; and the latest processing technologies,
from crystal growth to lithographic
patterii
transfer. For students in applied
physics, electrical and electronics engineering, and materials science.
Tne
Third Edition includes current interest content such as:
•
CMOS image sensors;
•
Fi
η
F ET;
•
Third generation solar cells:
•
Atomic layer deposition:
•
Expanded treatment of MOSFET and related devices:
Exoandea treatment of photonic devices
|
| any_adam_object | 1 |
| author | Sze, S. M. 1936-2023 Lee, Ming-Kwei |
| author_GND | (DE-588)133681998 (DE-588)1050189329 |
| author_facet | Sze, S. M. 1936-2023 Lee, Ming-Kwei |
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| bvnumber | BV040247151 |
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| ctrlnum | (OCoLC)796279550 (DE-599)BVBBV040247151 |
| dewey-full | 621.3815/2 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
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| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik Elektrotechnik Elektrotechnik / Elektronik / Nachrichtentechnik |
| edition | 3. ed., international student version |
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| genre_facet | Lehrbuch |
| id | DE-604.BV040247151 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T00:19:54Z |
| institution | BVB |
| isbn | 0470537949 9780470873670 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-025103218 |
| oclc_num | 796279550 |
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| owner | DE-M347 DE-1050 DE-83 DE-19 DE-BY-UBM DE-634 DE-29T DE-355 DE-BY-UBR DE-210 DE-188 DE-11 |
| owner_facet | DE-M347 DE-1050 DE-83 DE-19 DE-BY-UBM DE-634 DE-29T DE-355 DE-BY-UBR DE-210 DE-188 DE-11 |
| physical | IX, 582 S. Ill., graph. Darst. 26 cm |
| publishDate | 2013 |
| publishDateSearch | 2013 |
| publishDateSort | 2013 |
| publisher | Wiley |
| record_format | marc |
| spelling | Sze, S. M. 1936-2023 Verfasser (DE-588)133681998 aut Semiconductor devices physics and technology S. M. Sze ; M.K. Lee 3. ed., international student version Hoboken, NJ Wiley 2013 IX, 582 S. Ill., graph. Darst. 26 cm txt rdacontent n rdamedia nc rdacarrier Halbleiterphysik (DE-588)4113829-6 gnd rswk-swf Halbleiterbauelement (DE-588)4113826-0 gnd rswk-swf Halbleitertechnologie (DE-588)4158814-9 gnd rswk-swf (DE-588)4123623-3 Lehrbuch gnd-content Halbleiterbauelement (DE-588)4113826-0 s DE-604 Halbleitertechnologie (DE-588)4158814-9 s Halbleiterphysik (DE-588)4113829-6 s Lee, Ming-Kwei Verfasser (DE-588)1050189329 aut Digitalisierung UB Regensburg - ADAM Catalogue Enrichment application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025103218&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis Digitalisierung UB Regensburg - ADAM Catalogue Enrichment application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025103218&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA Klappentext |
| spellingShingle | Sze, S. M. 1936-2023 Lee, Ming-Kwei Semiconductor devices physics and technology Halbleiterphysik (DE-588)4113829-6 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleitertechnologie (DE-588)4158814-9 gnd |
| subject_GND | (DE-588)4113829-6 (DE-588)4113826-0 (DE-588)4158814-9 (DE-588)4123623-3 |
| title | Semiconductor devices physics and technology |
| title_auth | Semiconductor devices physics and technology |
| title_exact_search | Semiconductor devices physics and technology |
| title_full | Semiconductor devices physics and technology S. M. Sze ; M.K. Lee |
| title_fullStr | Semiconductor devices physics and technology S. M. Sze ; M.K. Lee |
| title_full_unstemmed | Semiconductor devices physics and technology S. M. Sze ; M.K. Lee |
| title_short | Semiconductor devices |
| title_sort | semiconductor devices physics and technology |
| title_sub | physics and technology |
| topic | Halbleiterphysik (DE-588)4113829-6 gnd Halbleiterbauelement (DE-588)4113826-0 gnd Halbleitertechnologie (DE-588)4158814-9 gnd |
| topic_facet | Halbleiterphysik Halbleiterbauelement Halbleitertechnologie Lehrbuch |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025103218&sequence=000003&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=025103218&sequence=000004&line_number=0002&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT szesm semiconductordevicesphysicsandtechnology AT leemingkwei semiconductordevicesphysicsandtechnology |