Computer-Aided Design and VLSI Device Development:
examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the ma...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Boston, MA
Springer US
1988
|
| Ausgabe: | Second Edition |
| Schriftenreihe: | The Kluwer International Series in Engineering and Computer Science, VLSI, Computer Architecture and Digital Signal Processing
53 |
| Schlagworte: | |
| Online-Zugang: | BTU01 Volltext |
| Zusammenfassung: | examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs |
| Beschreibung: | 1 Online-Ressource (XIV, 380 p) |
| ISBN: | 9781461316954 |
| DOI: | 10.1007/978-1-4613-1695-4 |
Internformat
MARC
| LEADER | 00000nmm a2200000zcb4500 | ||
|---|---|---|---|
| 001 | BV045185685 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 180912s1988 |||| o||u| ||||||eng d | ||
| 020 | |a 9781461316954 |9 978-1-4613-1695-4 | ||
| 024 | 7 | |a 10.1007/978-1-4613-1695-4 |2 doi | |
| 035 | |a (ZDB-2-ENG)978-1-4613-1695-4 | ||
| 035 | |a (OCoLC)1184379595 | ||
| 035 | |a (DE-599)BVBBV045185685 | ||
| 040 | |a DE-604 |b ger |e aacr | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-634 | ||
| 082 | 0 | |a 621.3 |2 23 | |
| 100 | 1 | |a Cham, Kit Man |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Computer-Aided Design and VLSI Device Development |c by Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin |
| 250 | |a Second Edition | ||
| 264 | 1 | |a Boston, MA |b Springer US |c 1988 | |
| 300 | |a 1 Online-Ressource (XIV, 380 p) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 490 | 0 | |a The Kluwer International Series in Engineering and Computer Science, VLSI, Computer Architecture and Digital Signal Processing |v 53 | |
| 520 | |a examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs | ||
| 650 | 4 | |a Engineering | |
| 650 | 4 | |a Electrical Engineering | |
| 650 | 4 | |a Engineering | |
| 650 | 4 | |a Electrical engineering | |
| 650 | 0 | 7 | |a CAD |0 (DE-588)4069794-0 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a VLSI |0 (DE-588)4117388-0 |2 gnd |9 rswk-swf |
| 689 | 0 | 0 | |a VLSI |0 (DE-588)4117388-0 |D s |
| 689 | 0 | 1 | |a CAD |0 (DE-588)4069794-0 |D s |
| 689 | 0 | |8 1\p |5 DE-604 | |
| 700 | 1 | |a Oh, Soo-Young |4 aut | |
| 700 | 1 | |a Moll, John L. |4 aut | |
| 700 | 1 | |a Lee, Keunmyung |4 aut | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 9781461289562 |
| 856 | 4 | 0 | |u https://doi.org/10.1007/978-1-4613-1695-4 |x Verlag |z URL des Erstveröffentlichers |3 Volltext |
| 912 | |a ZDB-2-ENG | ||
| 940 | 1 | |q ZDB-2-ENG_Archiv | |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-030574863 | ||
| 883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk | |
| 966 | e | |u https://doi.org/10.1007/978-1-4613-1695-4 |l BTU01 |p ZDB-2-ENG |q ZDB-2-ENG_Archiv |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804178875871133697 |
|---|---|
| any_adam_object | |
| author | Cham, Kit Man Oh, Soo-Young Moll, John L. Lee, Keunmyung |
| author_facet | Cham, Kit Man Oh, Soo-Young Moll, John L. Lee, Keunmyung |
| author_role | aut aut aut aut |
| author_sort | Cham, Kit Man |
| author_variant | k m c km kmc s y o syo j l m jl jlm k l kl |
| building | Verbundindex |
| bvnumber | BV045185685 |
| collection | ZDB-2-ENG |
| ctrlnum | (ZDB-2-ENG)978-1-4613-1695-4 (OCoLC)1184379595 (DE-599)BVBBV045185685 |
| dewey-full | 621.3 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3 |
| dewey-search | 621.3 |
| dewey-sort | 3621.3 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1007/978-1-4613-1695-4 |
| edition | Second Edition |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03548nmm a2200541zcb4500</leader><controlfield tag="001">BV045185685</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">180912s1988 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781461316954</subfield><subfield code="9">978-1-4613-1695-4</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/978-1-4613-1695-4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-2-ENG)978-1-4613-1695-4</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1184379595</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV045185685</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">aacr</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-634</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3</subfield><subfield code="2">23</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Cham, Kit Man</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Computer-Aided Design and VLSI Device Development</subfield><subfield code="c">by Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin</subfield></datafield><datafield tag="250" ind1=" " ind2=" "><subfield code="a">Second Edition</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Boston, MA</subfield><subfield code="b">Springer US</subfield><subfield code="c">1988</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (XIV, 380 p)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">The Kluwer International Series in Engineering and Computer Science, VLSI, Computer Architecture and Digital Signal Processing</subfield><subfield code="v">53</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Engineering</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrical engineering</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">CAD</subfield><subfield code="0">(DE-588)4069794-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">VLSI</subfield><subfield code="0">(DE-588)4117388-0</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">VLSI</subfield><subfield code="0">(DE-588)4117388-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">CAD</subfield><subfield code="0">(DE-588)4069794-0</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Oh, Soo-Young</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Moll, John L.</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Lee, Keunmyung</subfield><subfield code="4">aut</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">9781461289562</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1007/978-1-4613-1695-4</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-2-ENG</subfield></datafield><datafield tag="940" ind1="1" ind2=" "><subfield code="q">ZDB-2-ENG_Archiv</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-030574863</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1007/978-1-4613-1695-4</subfield><subfield code="l">BTU01</subfield><subfield code="p">ZDB-2-ENG</subfield><subfield code="q">ZDB-2-ENG_Archiv</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV045185685 |
| illustrated | Not Illustrated |
| indexdate | 2024-07-10T08:10:56Z |
| institution | BVB |
| isbn | 9781461316954 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030574863 |
| oclc_num | 1184379595 |
| open_access_boolean | |
| owner | DE-634 |
| owner_facet | DE-634 |
| physical | 1 Online-Ressource (XIV, 380 p) |
| psigel | ZDB-2-ENG ZDB-2-ENG_Archiv ZDB-2-ENG ZDB-2-ENG_Archiv |
| publishDate | 1988 |
| publishDateSearch | 1988 |
| publishDateSort | 1988 |
| publisher | Springer US |
| record_format | marc |
| series2 | The Kluwer International Series in Engineering and Computer Science, VLSI, Computer Architecture and Digital Signal Processing |
| spelling | Cham, Kit Man Verfasser aut Computer-Aided Design and VLSI Device Development by Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin Second Edition Boston, MA Springer US 1988 1 Online-Ressource (XIV, 380 p) txt rdacontent c rdamedia cr rdacarrier The Kluwer International Series in Engineering and Computer Science, VLSI, Computer Architecture and Digital Signal Processing 53 examples are presented. These chapters are intended to introduce the reader to the programs. The program structure and models used will be described only briefly. Since these programs are in the public domain (with the exception of the parasitic simulation programs), the reader is referred to the manuals for more details. In this second edition, the process program SUPREM III has been added to Chapter 2. The device simulation program PISCES has replaced the program SIFCOD in Chapter 3. A three-dimensional parasitics simulator FCAP3 has been added to Chapter 4. It is clear that these programs or other programs with similar capabilities will be indispensible for VLSI/ULSI device developments. Part B of the book presents case studies, where the application of simu lation tools to solve VLSI device design problems is described in detail. The physics of the problems are illustrated with the aid of numerical simulations. Solutions to these problems are presented. Issues in state-of-the-art device development such as drain-induced barrier lowering, trench isolation, hot elec tron effects, device scaling and interconnect parasitics are discussed. In this second edition, two new chapters are added. Chapter 6 presents the methodol ogy and significance of benchmarking simulation programs, in this case the SUPREM III program. Chapter 13 describes a systematic approach to investi gate the sensitivity of device characteristics to process variations, as well as the trade-otIs between different device designs Engineering Electrical Engineering Electrical engineering CAD (DE-588)4069794-0 gnd rswk-swf VLSI (DE-588)4117388-0 gnd rswk-swf VLSI (DE-588)4117388-0 s CAD (DE-588)4069794-0 s 1\p DE-604 Oh, Soo-Young aut Moll, John L. aut Lee, Keunmyung aut Erscheint auch als Druck-Ausgabe 9781461289562 https://doi.org/10.1007/978-1-4613-1695-4 Verlag URL des Erstveröffentlichers Volltext 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
| spellingShingle | Cham, Kit Man Oh, Soo-Young Moll, John L. Lee, Keunmyung Computer-Aided Design and VLSI Device Development Engineering Electrical Engineering Electrical engineering CAD (DE-588)4069794-0 gnd VLSI (DE-588)4117388-0 gnd |
| subject_GND | (DE-588)4069794-0 (DE-588)4117388-0 |
| title | Computer-Aided Design and VLSI Device Development |
| title_auth | Computer-Aided Design and VLSI Device Development |
| title_exact_search | Computer-Aided Design and VLSI Device Development |
| title_full | Computer-Aided Design and VLSI Device Development by Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin |
| title_fullStr | Computer-Aided Design and VLSI Device Development by Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin |
| title_full_unstemmed | Computer-Aided Design and VLSI Device Development by Kit Man Cham, Soo-Young Oh, John L. Moll, Keunmyung Lee, Paul Vande Voorde, Daeje Chin |
| title_short | Computer-Aided Design and VLSI Device Development |
| title_sort | computer aided design and vlsi device development |
| topic | Engineering Electrical Engineering Electrical engineering CAD (DE-588)4069794-0 gnd VLSI (DE-588)4117388-0 gnd |
| topic_facet | Engineering Electrical Engineering Electrical engineering CAD VLSI |
| url | https://doi.org/10.1007/978-1-4613-1695-4 |
| work_keys_str_mv | AT chamkitman computeraideddesignandvlsidevicedevelopment AT ohsooyoung computeraideddesignandvlsidevicedevelopment AT molljohnl computeraideddesignandvlsidevicedevelopment AT leekeunmyung computeraideddesignandvlsidevicedevelopment |