Charged semiconductor defects: structure, thermodynamics and diffusion
Gespeichert in:
| Hauptverfasser: | , |
|---|---|
| Format: | Buch |
| Sprache: | English |
| Veröffentlicht: |
Berlin [u.a.]
Springer
2009
|
| Schriftenreihe: | Engineering Materials and Processes
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | XIV, 294 S. Ill., graph. Darst. |
| ISBN: | 9781848820586 9781848820593 |
Internformat
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Datensatz im Suchindex
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| adam_text | EDMUND G. SEEBAUER * MEREDITH *. KRATZER CHARGED SEMICONDUCTOR DEFECTS
STRUCTURE, THERMODYNAMICS AND DIFFUSION SPRINGER CONTENTS 1 INTRODUCTION
1 REFERENCES 3 2 FUNDAMENTALS OF DEFECT IONIZATION AND TRANSPORT 5 2.1
INTRODUCTION 5 2.2 THERMODYNAMICS OF DEFECT CHARGING 5 2.2.1 FREE
ENERGIES, IONIZATION LEVELS, AND CHARGED DEFECT CONCENTRATIONS 7 2.2.2
IONIZATION ENTROPY 13 2.2.3 ENERGETICS OF DEFECT CLUSTERING 15 2.2.4
EFFECTS OF GAS PRESSURE ON DEFECT CONCENTRATION 17 2.3 THERMAL DIFFUSION
19 2.4 DRIFT IN ELECTRIC FIELDS 24 2.5 DEFECT KINETICS 25 2.5.1
REACTIONS 25 2.5.2 CHARGING 29 2.6 DIRECT SURFACE-BULK COUPLING 31 2.7
NON-THERMALLY STIMULATED DEFECT CHARGING AND FORMATION 32 2.7.1
PHOTOSTIMULATION 32 2.7.2 ION-DEFECT INTERACTIONS 33 REFERENCES 34 3
EXPERIMENTAL AND COMPUTATIONAL CHARACTERIZATION 39 3.1 EXPERIMENTAL
CHARACTERIZATION 39 3.1.1 DIRECT DETECTION OF BULK DEFECTS 39 3.1.2
INDIRECT DETECTION OF BULK DEFECTS 43 3.1.3 DIFFUSION IN THE BULK 44
3.1.4 DIRECT DETECTION OF SURFACE DEFECTS 45 3.1.5 DIFFUSION ON THE
SURFACE 46 IX X CONTENTS 3.2 COMPUTATIONAL PREDICTION 47 3.2.1 DENSITY
FUNCTIONAL THEORY 47 3.2.2 OTHER ATOMISTIC METHODS 50 3.2.3 MAXIMUM
LIKELIHOOD ESTIMATION 51 3.2.4 SURFACES AND INTERFACES 56 REFERENCES 56
4 TRENDS IN CHARGED DEFECT BEHAVIOR 63 4.1 DEFECT FORMATION 63 4.1.1
EFFECTS OF CRYSTAL STRUCTURE AND ATOMIC PROPERTIES 63 4.1.2 EFFECTS OF
STOICHIOMETRY 66 4.2 DEFECT GEOMETRY 68 4.3 DEFECT CHARGING 69 4.3.1
BULK VS. SURFACE 70 4.3.2 POINT DEFECTS VS. DEFECT AGGREGATES 71 4.4
DEFECT DIFFUSION 71 REFERENCES 72 5 INTRINSIC DEFECTS: STRUCTURE 73 5.1
BULK DEFECTS 73 5.1.1 SILICON 76 5.1.2 GERMANIUM 84 5.1.3 GALLIUM
ARSENIDE 86 5.1.4 OTHER *-V SEMICONDUCTORS 92 5.1.5 TITANIUM DIOXIDE 95
5.1.6 OTHER OXIDE SEMICONDUCTORS 100 5.2 SURFACE DEFECTS 105 5.2.1
SILICON 106 5.2.2 GERMANIUM ILL 5.2.3 GALLIUM ARSENIDE 112 5.2.4 OTHER
*-V SEMICONDUCTORS 116 5.2.5 TITANIUM DIOXIDE 120 5.2.6 OTHER OXIDE
SEMICONDUCTORS 122 REFERENCES 123 6 INTRINSIC DEFECTS: IONIZATION
THERMODYNAMICS 131 6.1 BULK DEFECTS 131 6.1.1 SILICON 131 6.1.2
GERMANIUM 144 6.1.3 GALLIUM ARSENIDE 148 6.1.4 OTHER *-V SEMICONDUCTORS
156 6.1.5 TITANIUM DIOXIDE 160 6.1.6 OTHER OXIDE SEMICONDUCTORS 166
CONTENTS XI 6.2 SURFACE DEFECTS 173 6.2.1 SILICON 173 6.2.2 GERMANIUM
176 6.2.3 GALLIUM ARSENIDE 178 6.2.4 OTHER III-V SEMICONDUCTORS 181
6.2.5 TITANIUM DIOXIDE 183 6.2.6 OTHER OXIDE SEMICONDUCTORS 185
REFERENCES 187 7 INTRINSIC DEFECTS: DIFFUSION 195 7.1 BULK DEFECTS 195
7.1.1 POINT DEFECTS 196 7.1.2 ASSOCIATES AND CLUSTERS 212 7.2 SURFACE
DEFECTS 215 7.2.1 POINT DEFECTS 215 7.2.2 ASSOCIATES AND CLUSTERS 222
7.3 PHOTOSTIMULATED DIFFUSION 222 7.3.1 PHOTOSTIMULATED DIFFUSION IN THE
BULK 223 7.3.2 PHOTOSTIMULATED DIFFUSION ON THE SURFACE 225 REFERENCES
226 8 EXTRINSIC DEFECTS 233 8.1 BULK DEFECTS 233 8.1.1 SILICON 234 8.1.2
GERMANIUM 249 8.1.3 GALLIUM ARSENIDE 255 8.1.4 OTHER III-V
SEMICONDUCTORS 260 8.1.5 TITANIUM DIOXIDE 265 8.1.6 OTHER OXIDE
SEMICONDUCTORS 271 8.2 SURFACE DEFECTS 277 8.2.1 SILICON 278 8.2.2
GALLIUM ARSENIDE 280 8.2.3 TITANIUM DIOXIDE 281 REFERENCES 281 INDEX 291
|
| adam_txt |
EDMUND G. SEEBAUER * MEREDITH *. KRATZER CHARGED SEMICONDUCTOR DEFECTS
STRUCTURE, THERMODYNAMICS AND DIFFUSION SPRINGER CONTENTS 1 INTRODUCTION
1 REFERENCES 3 2 FUNDAMENTALS OF DEFECT IONIZATION AND TRANSPORT 5 2.1
INTRODUCTION 5 2.2 THERMODYNAMICS OF DEFECT CHARGING 5 2.2.1 FREE
ENERGIES, IONIZATION LEVELS, AND CHARGED DEFECT CONCENTRATIONS 7 2.2.2
IONIZATION ENTROPY 13 2.2.3 ENERGETICS OF DEFECT CLUSTERING 15 2.2.4
EFFECTS OF GAS PRESSURE ON DEFECT CONCENTRATION 17 2.3 THERMAL DIFFUSION
19 2.4 DRIFT IN ELECTRIC FIELDS 24 2.5 DEFECT KINETICS 25 2.5.1
REACTIONS 25 2.5.2 CHARGING 29 2.6 DIRECT SURFACE-BULK COUPLING 31 2.7
NON-THERMALLY STIMULATED DEFECT CHARGING AND FORMATION 32 2.7.1
PHOTOSTIMULATION 32 2.7.2 ION-DEFECT INTERACTIONS 33 REFERENCES 34 3
EXPERIMENTAL AND COMPUTATIONAL CHARACTERIZATION 39 3.1 EXPERIMENTAL
CHARACTERIZATION 39 3.1.1 DIRECT DETECTION OF BULK DEFECTS 39 3.1.2
INDIRECT DETECTION OF BULK DEFECTS 43 3.1.3 DIFFUSION IN THE BULK 44
3.1.4 DIRECT DETECTION OF SURFACE DEFECTS 45 3.1.5 DIFFUSION ON THE
SURFACE 46 IX X CONTENTS 3.2 COMPUTATIONAL PREDICTION 47 3.2.1 DENSITY
FUNCTIONAL THEORY 47 3.2.2 OTHER ATOMISTIC METHODS 50 3.2.3 MAXIMUM
LIKELIHOOD ESTIMATION 51 3.2.4 SURFACES AND INTERFACES 56 REFERENCES 56
4 TRENDS IN CHARGED DEFECT BEHAVIOR 63 4.1 DEFECT FORMATION 63 4.1.1
EFFECTS OF CRYSTAL STRUCTURE AND ATOMIC PROPERTIES 63 4.1.2 EFFECTS OF
STOICHIOMETRY 66 4.2 DEFECT GEOMETRY 68 4.3 DEFECT CHARGING 69 4.3.1
BULK VS. SURFACE 70 4.3.2 POINT DEFECTS VS. DEFECT AGGREGATES 71 4.4
DEFECT DIFFUSION 71 REFERENCES 72 5 INTRINSIC DEFECTS: STRUCTURE 73 5.1
BULK DEFECTS 73 5.1.1 SILICON 76 5.1.2 GERMANIUM 84 5.1.3 GALLIUM
ARSENIDE 86 5.1.4 OTHER *-V SEMICONDUCTORS 92 5.1.5 TITANIUM DIOXIDE 95
5.1.6 OTHER OXIDE SEMICONDUCTORS 100 5.2 SURFACE DEFECTS 105 5.2.1
SILICON 106 5.2.2 GERMANIUM ILL 5.2.3 GALLIUM ARSENIDE 112 5.2.4 OTHER
*-V SEMICONDUCTORS 116 5.2.5 TITANIUM DIOXIDE 120 5.2.6 OTHER OXIDE
SEMICONDUCTORS 122 REFERENCES 123 6 INTRINSIC DEFECTS: IONIZATION
THERMODYNAMICS 131 6.1 BULK DEFECTS 131 6.1.1 SILICON 131 6.1.2
GERMANIUM 144 6.1.3 GALLIUM ARSENIDE 148 6.1.4 OTHER *-V SEMICONDUCTORS
156 6.1.5 TITANIUM DIOXIDE 160 6.1.6 OTHER OXIDE SEMICONDUCTORS 166
CONTENTS XI 6.2 SURFACE DEFECTS 173 6.2.1 SILICON 173 6.2.2 GERMANIUM
176 6.2.3 GALLIUM ARSENIDE 178 6.2.4 OTHER III-V SEMICONDUCTORS 181
6.2.5 TITANIUM DIOXIDE 183 6.2.6 OTHER OXIDE SEMICONDUCTORS 185
REFERENCES 187 7 INTRINSIC DEFECTS: DIFFUSION 195 7.1 BULK DEFECTS 195
7.1.1 POINT DEFECTS 196 7.1.2 ASSOCIATES AND CLUSTERS 212 7.2 SURFACE
DEFECTS 215 7.2.1 POINT DEFECTS 215 7.2.2 ASSOCIATES AND CLUSTERS 222
7.3 PHOTOSTIMULATED DIFFUSION 222 7.3.1 PHOTOSTIMULATED DIFFUSION IN THE
BULK 223 7.3.2 PHOTOSTIMULATED DIFFUSION ON THE SURFACE 225 REFERENCES
226 8 EXTRINSIC DEFECTS 233 8.1 BULK DEFECTS 233 8.1.1 SILICON 234 8.1.2
GERMANIUM 249 8.1.3 GALLIUM ARSENIDE 255 8.1.4 OTHER III-V
SEMICONDUCTORS 260 8.1.5 TITANIUM DIOXIDE 265 8.1.6 OTHER OXIDE
SEMICONDUCTORS 271 8.2 SURFACE DEFECTS 277 8.2.1 SILICON 278 8.2.2
GALLIUM ARSENIDE 280 8.2.3 TITANIUM DIOXIDE 281 REFERENCES 281 INDEX 291 |
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| isbn | 9781848820586 9781848820593 |
| language | English |
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| spelling | Seebauer, Edmund G. Verfasser aut Charged semiconductor defects structure, thermodynamics and diffusion Edmund G. Seebauer ; Meredith C. Kratzer Berlin [u.a.] Springer 2009 XIV, 294 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Engineering Materials and Processes Gitterbaufehler (DE-588)4125030-8 gnd rswk-swf Halbleiter (DE-588)4022993-2 gnd rswk-swf Halbleiter (DE-588)4022993-2 s Gitterbaufehler (DE-588)4125030-8 s DE-604 Kratzer, Meredith C. Verfasser aut GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016992739&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Seebauer, Edmund G. Kratzer, Meredith C. Charged semiconductor defects structure, thermodynamics and diffusion Gitterbaufehler (DE-588)4125030-8 gnd Halbleiter (DE-588)4022993-2 gnd |
| subject_GND | (DE-588)4125030-8 (DE-588)4022993-2 |
| title | Charged semiconductor defects structure, thermodynamics and diffusion |
| title_auth | Charged semiconductor defects structure, thermodynamics and diffusion |
| title_exact_search | Charged semiconductor defects structure, thermodynamics and diffusion |
| title_exact_search_txtP | Charged semiconductor defects structure, thermodynamics and diffusion |
| title_full | Charged semiconductor defects structure, thermodynamics and diffusion Edmund G. Seebauer ; Meredith C. Kratzer |
| title_fullStr | Charged semiconductor defects structure, thermodynamics and diffusion Edmund G. Seebauer ; Meredith C. Kratzer |
| title_full_unstemmed | Charged semiconductor defects structure, thermodynamics and diffusion Edmund G. Seebauer ; Meredith C. Kratzer |
| title_short | Charged semiconductor defects |
| title_sort | charged semiconductor defects structure thermodynamics and diffusion |
| title_sub | structure, thermodynamics and diffusion |
| topic | Gitterbaufehler (DE-588)4125030-8 gnd Halbleiter (DE-588)4022993-2 gnd |
| topic_facet | Gitterbaufehler Halbleiter |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=016992739&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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