Topological insulators:

This book provides an introduction to topological matter with a focus on insulating bulk systems. A number of prerequisite concepts and tools are first laid out, including the notion of symmetry transformations, the band theory of semiconductors and aspects of electronic transport. The main part of...

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1. Verfasser: Kotetes, Panaglotis (VerfasserIn)
Format: Elektronisch E-Book
Sprache:English
Veröffentlicht: San Rafael, CA, USA Morgan & Claypool Publishers [2019]
Bristol IOP Publishing
Ausgabe:Version: 20190401
Schriftenreihe:IOP concise physics
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Online-Zugang:UBT01
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Zusammenfassung:This book provides an introduction to topological matter with a focus on insulating bulk systems. A number of prerequisite concepts and tools are first laid out, including the notion of symmetry transformations, the band theory of semiconductors and aspects of electronic transport. The main part of the book discusses realistic models for both time-reversal-preserving and -violating topological insulators, as well as their characteristic responses to external perturbations. Special emphasis is given to the study of the anomalous electric, thermal, and thermoelectric transport properties, the theory of orbital magnetisation, and the polar Kerr effect. The topological models studied throughout this book become unified and generalised by means of the tenfold topological-classification framework and the respective systematic construction of topological invariants. This approach is further extended to topological superconductors and topological semimetals. This book covers a wide range of topics and aims at the transparent presentation of the technical aspects involved. For this purpose, homework problems are also provided in dedicated Hands-on sections. Given its structure and the required background level of the reader, this book is particularly recommended for graduate students or researchers who are new to the field
Beschreibung:1 Online-Ressource (getrennte Seitenzählung) Illustrationen, Diagramme
ISBN:9781681745176
DOI:10.1088/978-1-68174-517-6

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