Papers presented at the 34th International Symposium on Compound Semiconductors (ISCS-2007), Kyoto, Japan, 15 - 18 October 2007:
Gespeichert in:
| Körperschaft: | |
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| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Weinheim
Wiley-VCH
2008
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| Schriftenreihe: | Physica status solidi : C, Current topics in solid state physics
5,9 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis Inhaltsverzeichnis |
| Beschreibung: | Einzelaufnahme eines Zs.-Heftes |
| Beschreibung: | S. 2679 - 3205 Ill., graph. Darst. 28 cm |
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| 245 | 1 | 0 | |a Papers presented at the 34th International Symposium on Compound Semiconductors (ISCS-2007), Kyoto, Japan, 15 - 18 October 2007 |c guest ed.: Yoshiro Hirayama ... |
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| 490 | 0 | |a Physica status solidi : C, Current topics in solid state physics |v 5,9 | |
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| 650 | 4 | |a Semiconductors |x Materials |v Congresses | |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |2 gnd-content | |
| 700 | 1 | |a Hirayama, Yoshiro |e Sonstige |4 oth | |
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Datensatz im Suchindex
| _version_ | 1804139341936590849 |
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| adam_text | WWW.PSS-C.COM CURRENT TOPICS IN SOLID STATE PHYSICS V 0 SITE ELECTRONIC
STRUCTURE OF OXYGEN DEFICIENT AMORPHOUS OXIDE SEMICONDUCTOR A-LNGAZN0^ X
: OPTICAL ANALYSES AND FIRST-PRINCIPLE CALCULATIONS (TOSHIO KAMIYA,
KENJI NOMURA, MASAHIRO HIRANO, AND HIDEO HOSONO, P. 3098) WITH
CONTRIBUTIONS FROM THE 34TH INTERNATIONAL SYMPOSIUM ON COMPOUND
SEMICONDUCTORS 5 * 9 * 2008 WILEY-VCH ISSN 1862-6351, PHYS. STAT. SOL.
(C) 5,NO.9,2679-3206 (2008) CONTENTS PHYS. STAT. SOL. (C) 5, NO. 9,
2679-2691 (2008) / DOI 10.1002/PSSC.200860027 ^WILEY ITITERSCIENCE 8 D I
S C O V E R S O M E T H I N G GREAT FUELL TEXT ON OUR HOMEPAGE AT
WWW.PSS-C.COM PAPERS PRESENTED AT THE 34TH INTERNATIONAL SYMPOSIUM ON
COMPOUND SEMICONDUCTORS (ISCS-2007) KYOTO, JAPAN, 15-18 OCTOBER 2007
GUEST EDITORS: YOSHIRO HIRAYAMA AND TETSUOMI SOGAWA PAGE 2693 PAGE
2694-2696 PREFACE COMMITTEES, SPONSORS AND EXHIBITORS GROWTH AND
NANOSTRUCTURE FORMATION PAGE 2699-2703 PAGE 2704-2708 PAGE 2709-2712
PAGE 2713-2715 PAGE 2716-2718 PAGE 2719-2721 PAGE 2722-2725 PAGE
2726-2728 PAGE 2729-2732 WILEY -* MTERSCIENCE* K. TAKEMOTO, S. HIROSE,
M. TAKATSU, N. YOKOYAMA, Y. SAKUMA, T. USUKI, T. MIYAZAWA, AND Y.
ARAKAWA (INVITED) TELECOM SINGLE-PHOTON SOURCE WITH HOERN STRUCTURE
CHRISTOPH DENEKE, JOACHIM SCHUMANN, RONNY ENGELHARD, JUERGEN THOMAS,
WILFRIED SIGLE, UTE ZSCHIESCHANG, HAGEN KLAUK, ANDREY CHUVILIN, AND
OLIVER G. SCHMIDT (INVITED) FABRICATION OF RADIAL SUPERLATTICES BASED ON
DIFFERENT HYBRID MATERIALS H. S. LING, C. P. LEE, S. Y. WANG, AND M. C.
LO ENERGY DEPENDENT CARRIER RELAXATION IN SELF-ASSEMBLED INAS/GAAS
QUANTUM DOTS HSIANG-SZU CHANG, CHIEH-MING HSU, MING-HUI YANG, TUNG-PO
HSIEH, JEN-INN CHYI, AND TZU-MIN HSU SITE-CONTROLLED INGAAS QUANTUM DOTS
GROWN ON A GAAS MULTI-FACETED MICROSTRUCTURE FOR SINGLE PHOTON EMISSIONS
KEI FUJII, KEIJI HIDAKA, DAI YAMAMOTO, YOSHIKAZU TERAI, AND YASUFUMI
FUJIWARA GAAS EMISSION FROM GALNP/ER,0-CO DOPED GAAS/GALNP LASER DIODES
GROWN BY ORGANOMETALLIC VAPOR PHASE EPITAXY YORIKO TOMINAGA, YUSUKE
KINOSHITA, GAN FENG, KUNISHIGE OE, AND MASAHIRO YOSHIMOTO GROWTH OF
GAAS^BI/GAAS MULTI-QUANTUM WELLS BY MOLECULAR BEAM EPITAXY B. HUA, J.
MOTOHISA, S. HARA, AND T. FUKUI MICROCAVITY STRUCTURES IN SINGLE GAAS
NANOWIRES A. ISHII, Y. ODA, AND K. FUJIWARA DFT STUDY FOR THE
ANISOTROPIC EPITAXIAL GROWTH OF A-FACE ZNO(1120) M. AKAZAWA AND H.
HASEGAWA GAAS HIGH-K DIELECTRIC METAL-INSULATOR-SEMICONDUCTOR STRUCTURE
HAVING SILICON INTERFACE CONTROL LAYER 9 2008 WILEY-VCH VERLAG GMBH &
CO. KGAA, WEINHEIM OEI- R R/ / ^R /7W# -S,3 2680 CONTENTS PAGE 2733-2735.
PAGE 2736-2739 PAGE 2740-2742. PAGE 2743-2745. PAGE 2746-2749. PAGE
2750-2752. PAGE 2753-2755. PAGE 2756-2759 PAGE 2760-2762. PAGE 2763-276
5 PAGE 2766-2768. PAGE 2769-2771 TAKUYA HOSHII, MOMOKO DEURA, MASAKAZU
SUGIYAMA, RYOSHO NAKANE, SATOSHI SUGAHARA, MITSURU TAKENAKA, YOSHIAKI
NAKANO, AND SHINICHI TAKAGI EPITAXIAL LATERAL OVERGROWTH OF INGAAS ON
SI0 2 FROM (111) SI MICRO CHANNEL AREAS S. D. WU, M. KATO, M. UCHIYAMA,
K. HIGASHI, F. ISHIKAWA, AND M. KONDOW EFFECT OF THE UNINTENTIONAL
INCORPORATION OF AI DURING THE MOLECULAR BEAM EPITAXIAL GROWTH OF
GALNNAS QUANTUM WELL J. H. PAEK, T. NISHIWAKI, M. YAMAGUCHI, AND N.
SAWAKI MBE-VLS GROWTH OF GAAS NANOWIRES ON (111)SI SUBSTRATE M. FUKUI,
Y. KOBAYASHI, J. MOTOHISA, AND T. FUKUI SPECTROSCOPY AND IMAGING OF
GAAS/INGAAS/GAAS NANOWIRES GROWN BY SELECTIVE-AREA METALORGANIC VAPOR
PHASE EPITAXY K. KOIKE, T. ITAKURA, T. HOTEI, M. YANO, H. GROISS, G.
HESSER, AND F. SCHAEFFLER THERMAL PRECIPITATION OF SELF-ORGANIZED PBTE
QUANTUM DOTS IN CDTE HOST MATRIX KENSUKE FUJII, TSUNEAKI KUMAMOTO,
YUICHI ODA, AYAMI NISHIOKA, HAYATO MIYAGAWA, YASUHIRO TANAKA, AND SHYUN
KOSHIBA THE EFFECTS OF GAAS INTERVAL LAYER ON GANAS/GAAS SUPERLATTICE
STRUCTURE GROWN BY RF-MBE USING MODULATED N RADICAL BEAM SEQUENCE T.
KITADA, S. KUSUONKI, M. KINOUCHI, K. MORITA, T. ISU, AND S. SHIMOMURA
ISOTROPIE INTERFACE ROUGHNESS OF PSEUDOMORPHIC LN 074 GA 026 AS/LN 052
AI 048 AS QUANTUM WELLS GROWN ON (411)A INP SUBSTRATES BY MOLECULAR BEAM
EPITAXY NOBUYOSHI NIKI, KEN MORITA, TAKAHIRO KITADA, AND TOSHIRO ISU
OPTICAL ANISOTROPY OF STRAINED QUANTUM WELLS ON HIGH INDEX SUBSTRATES 0.
CHIKALOVA-LUZINA INTERPLAY OF IMPURITY SEGREGATION AND LATTICE MISMATCH
IN MOLECULAR BEAM EPITAXY OF IH -LIR-V COMPOUNDS PLUS DOPANT:
APPLICATION TO THE INGAAS :SN NANOHETEROLAYER GROWTH TAKEO OHNO, YUTAKA
OYAMA, AND JUN-ICHI NISHIZAWA THE SUBSTRATE ORIENTATION DEPENDENCE OF BE
DOPING IN MOLECULAR LAYER EPITAXY OF GAAS K. ARAKI, J. U. SEO, S.
HASEGAWA, AND H. ASAHI SEJECTIVE GROWTH OF INP ON IOCAIIZED AREAS OF
SILICON (100) SUBSTRATE BY MOLECULAR BEAM EPITAXY H. TOYOTA, T. YASUDA,
T. ENDOH, Y. JINBO, AND N. UCHITOMI GROWTH AND CHARACTERIZATION OF GASB
HETEROEPITAXIAL LAYERS ON SI(111) SUBSTRATES 2008 WILEY-VCH VERLAG
GMBH & CO. KGAA, WEINHEIM WWW.PSS-C.COM CONTENTS CONTENTS 2681 PAGE
2772-2774 M. MORI, M. SAITO, K. NAGASHIMA, K. UEDA, Y. YAMASHITA, C.
TATSUYAMA, T. TAMBO, AND K. MAEZAWA HETEROEPITAXIAL INSB FILMS GROWN VIA
SI(111)-V7 X V3-IN SURFACE RECONSTRUCTION PAGE 2775-277 7 T. D. MISHIMA,
M. EDIRISOORIYA, AND M. B. SANTOS MICRO-TWIN INDUCED STRUCTURAL
MISALIGNMENT IN INSB QUANTUM WELLS PAGE 2778-2780 K. MURATA, N. B.
AHMAD, M. MORI, T. TAMBO, AND K. MAEZAWA CRYSTAL ORIENTATIONS OF INSB
FILMS GROWN ON A SI(111) SUBSTRATE BY INSERTING ALSB BUFFER LAYER PAGE
2781-2783 M. TAKUSHIMA AND Y. KAJIKAWA EXCESS AS IN LOW-TEMPERATURE
GROWN INAS TRANSPORT DEVICES PAGE 2784-2786 NAOKI HARA, TSUYOSHI
TAKAHASHI, TOSHIHIRO OHKI, AND KOZO MAKIYAMA VERTICALLY SCALED
80-NM-GATE INP-BASED HEMTS WITH A CUTOFF FREQUENCY OF 450 GHZ PAGE
2787-2790 Y. JEONG, M. SHINDO, H. TAKITA, M. AKABORI, AND T. SUZUKI
STRUCTURAL, OPTICAL, AND ELECTRICAL CHARACTERIZATIONS OF EPITAXIAL
LIFTED-OFF INGAAS/LNAIAS METAMORPHIC HETEROSTRUCTURES BONDED ON AIN
CERAMIC SUBSTRATES PAGE 2791-2794 HIROHISA TAGUCHI, CHIHIRO SANO,
HIROAKI MURAKAMI, MASASHI OURA, TSUTOMU LIDA, AND YOSHIFUMI TAKANASHI
ANALYSIS OF MINORITY CARRIER LIFETIME FOR INAIAS/INGAAS HIGH ELECTRON
MOBILITY TRANSISTORS BY USING 1.55-UM FEMTO-SECOND PULSE LASER PAGE
2795-2798 HIROKI I. FUJISHIRO, TAKAHIRO KAWABATA, AND JESUS A. DEL ALAMO
QUANTUM-CORRECTED MONTE CARLO ANALYSIS OF SCALING BEHAVIOR OF NANO-SCALE
INGAAS HIGH ELECTRON MOBILITY TRANSISTORS PAGE 2799-2801 J. NISHIZAWA,
P. PTOTKA, AND T. KURABAYASHI GAAS AREA-SELECTIVE REGROWTH WITH
MOLECULAR LAYER EPITAXY FOR INTEGRATION OF LOW NOISE AND POWER
TRANSISTORS, AND SCHOTTKY DIODES PAGE 2802-2804 J. NISHIZAWA, P. PTOTKA,
T. KURABAYASHI, AND H. MAKABE 706-GHZ GAAS CW FUNDAMENTAL-MODE TUNNEL
DIODES FABRICATED WITH MOLECULAR LAYER EPITAXY PAGE 2805-2807 Y. G.
CHEN, T. ITATANI, AND M. OHKUBO N-CHANNEL GAAS MESFETS FOR CRYOGENIC
APPLICATION PHOTONIC DEVICES PAGE 2808-2815 LLYA FUSHMAN, DIRK ENGLUND,
ANDREI FARAON, AND JELENA VUCKOVIC (INVITED) PROBING THE INTERACTION
BETWEEN A SINGLE QUANTUM DOT AND A PHOTONIC CRYSTAL CAVITY WWW.PSS-C.COM
E 2008 WILEY-VCH VERLAG GMBH S CO. KGAA, WEINHEIM 2682 CONTENTS PAGE
2816-2818. PAGE 2819-2821 PAGE 2822-2824. PAGE 2825-2827. PAGE
2828-2830. PAGE 2831- PAGE 2835- 2834. 2837 PAGE 2838-2840. PAGE
2841-2843. PAGE 2844-2846. YUJIRO HAYASHI, KAZUNORI TANAKA, TATSUSHI
AKAZAKI, MASAFUMI JO, HIDEKAZU KUMANO, AND IKUO SUEMUNE LUMINESCENCE
OBSERVED FROM A JUNCTION FIELD-EFFECT TRANSISTOR WITH NB/N-INGAAS/NB
JUNCTION KOICHIRO UENO, EDSON GOMES CAMARGO, TOMOHIRO MORISHITA,
MASAYUKI SATO, AYA YOKOYAMA, HIDETOSHI ENDO, YOSHINORI YANAGITA,
HIROMASA GOTO, AND NAOHIRO KUZE MINIATURIZED INSB MID-IR PHOTOVOLTAIC
SENSOR FOR ROOM TEMPERATURE OPERATION KOICHI OKAMOTO, AXEL SCHERER, AND
YOICHI KAWAKAMI SURFACE PLASMON ENHANCED LIGHT EMISSION FROM
SEMICONDUCTOR MATERIALS M. YAMAGUCHI, M. YOKOI, AND N. SAWAKI LIGHT
PROPAGATION IN A COUPLED WAVEGUIDE-TRIPLE QUANTUM WELL STRUCTURE M.
YAMAGUCHI, T. ASANO, M. FUJITA, AND S. NODA THEORETICAL ANALYSIS OF
LIGHT EMISSION FROM A COUPLED SYSTEM OF A PHOTONIC NANOCAVITY AND A
QUANTUM DOT M. NOMURA, S. IWAMOTO, AND Y. ARAKAWA PREREQUISITES OF
NANOCAVITIES FOR SINGLE ARTIFICIAL ATOM LASER YOUNG TAE BYUN, SUHYUN
KIM, SUN HO KIM, AND YOUNGCHUL CHUNG FABRICATION OF BLUE-SHIFTED
FABRY-PEROT LASER DIODES FOR INTEGRATION WITH OPTICAL PASSIVE WAVEGUIDES
YASUTAKA HIGA, TOMOYUKI MIYAMOTO, HIROSHI NAKAJIMA, KOSUKE FUJIMOTO, AND
FUMIO KOYAMA THEORETICAL DESIGN OF CARRIER INJECTION RATE AND
RECOMBINATION RATE IN TUNNEL INJECTION QUANTUM WELL LASERS MASAHIRO
YOSHITA, MAKOTO OKANO, TOSHIYUKI LHARA, HIDEFUMI AKIYAMA, PING HUAI,
TETSUO OGAWA, LOREN N. PFEIFFER, AND KEN W. WEST
CARRIER-DENSITY-DEPENDENT INCREASE AND SUPPRESSION OF OPTICAL GAIN IN
T-SHAPED QUANTUM-WIRE LASERS GYUNGOCK KIM, KI SEOK JANG, IN GYOO KIM,
AND KI JOONG LEE CURRENT-CONTROLLED WAVELENGTH TUNABILITY OF A QUANTUM
CASCADE LASER PHYSICS PAGE 2847-2849 PAGE 2850-2853. NING KANG, EISUKE
ABE, YOSHIAKI HASHIMOTO, YASUHIRO LYE, AND SHINGO KATSUMOTO
MAGNETOTRANSPORT THROUGH A TWO-DIMENSIONAL HOLE ANTIDOT LATTICE:
SIGNATURES OF BERRY PHASE K.-J. FRIEDLAND, R. HEY, H. KOSTIAL, AND A.
RIEDEL LONGITUDINAL-COMMENSURABLE RESISTANCE OSCILLATIONS IN THE
BALLISTIC TRANSPORT OF ELECTRONS ON CYLINDRICAL SURFACES ) 2008
WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM WWW.PSS-C.COM CONTENTS
CONTENTS 2683 PAGE 2854-2857 PAGE 2858-2860 PAGE 2861-2863 PAGE
2864-2866 PAGE 2867-2868 PAGE 2869-2872 PAGE 2873-2875 PAGE 2876-2878
PAGE 2879-2881 PAGE 2882-2885 PAGE 2886-2888 T. KODERA, K. ONO, S.
AMAHA, Y. TOKURA, Y. ARAKAWA, AND S. TARUCHA ELASTIC AND INELASTIC
TUNNELING THROUGH ONE-ELECTRON AND TWO-ELECTRON STATES IN A VERTICAL
DOUBLE QUANTUM DOT 0. KOJIMA, T. ISU, J. ISHI-HAYASE, M. SASAKI, A.
KANNO, R. KATOUF, AND M. TSUCHIYA SPECTRAL WIDTH DEPENDENCE OF RESIDUAL
CARRIER EFFECT ON NONLINEAR OPTICAL RESPONSE OF WEAKLY CONFINED EXCITONS
K. SHIMADA, S. TAKEMOTO, K. HIDAKA, Y. TERAI, M. TONOUCHI, AND Y.
FUJIWARA ULTRAFAST PHOTOEXCITED CARRIER DYNAMICS IN GAAS:ER,0 BY PUMP
AND PROBE TRANSMISSION SPECTROSCOPY A. FUJITA, T. TOKUNO, K. HIDAKA, K.
FUJII, K. TACHIBANA, H. ICHIDA, Y. TERAI, Y. KANEMATSU, AND Y. FUJIWARA
NONRADIATIVE PROCESSES AT LOW TEMPERATURE IN ER,0-CODOPED GAAS GROWN BY
ORGANOMETALLIC VAPOR PHASE EPITAXY M. OHMORI, K. TORII, AND H. SAKAKI
TEMPERATURE DEPENDENCES OF CHARGED EXCITONS IN LOW-DENSITY INAS QUANTUM
DOT SYSTEM K. SHIBATA, M. JUNG, C BUIZERT, A. OIWA, K. HIRAKAWA, T.
MACHIDA, AND S. TARUCHA ELECTRON TUNNELING THROUGH SINGLE SELF-ASSEMBLED
INAS QUANTUM DOTS COUPLED TO NANOGAP ELECTRODES TOMOHIRO OTSUKA, EISUKE
ABE, YASUHIRO LYE, AND SHINQO KATSUMOTO CONTROL OF SHELL FILLING WITH
COULOMB INTERACTION IN QUANTUM DOTS SIDE-COUPLED TO QUANTUM WIRES NING
KANG, KAZUYA SUZUKI, EISUKE ABE, YOSHIAKI HASHIMOTO, YASUHIRO LYE, AND
SHINGO KATSUMOTO BAND WARPING EFFECT APPEARED IN COMMENSURABILITY
OSCILLATIONS IN ANTIDOT LATTICES OF A TWO-DIMENSIONAL HOLE GAS T. KAWAZU
AND H. SAKAKI MAGNETO-CAPACITANCE STUDY OF AN N-AIGAAS/GAAS
HETEROJUNCTION SUPPORTING A SIZABLE DE CURRENT TAKEO OHNO, YUTAKA OYAMA,
SHOTA SATO, AND JUN-ICHI NISHIZAWA TUNNELING MECHANISM OF GAAS
ULTRASHALLOW SIDEWALL TUNNEL JUNETION T. HASEGAWA AND M. NAKAYAMA
BISTABILITY OPERATION OF PHOTOCURRENT DUE TO WAVE-FUNCTION COUPLING OF
WANNIER-STARK LOCALIZATION STATES IN A GAAS/ALAS SUPERLATTICE
SPINTRONICS PAGE 2889-2892 P. W. JACOBS, J. K. FURDYNA, AND R. MERLIN
(INVITED) COHERENT CONTROL OF BOUND ENTANGLED ELECTRONS IN A CDMNTE
QUANTUM WELL WWW.PSS-C.COM 2008 WILEY-VCH VERLAG GMBH S CO. KGAA,
WEINHEIM IE IL. IS M 2684 CONTENTS PAGE 2893-2895 PAGE 2896-2900. PAGE
2901-2903. PAGE 2904-2906. PAGE 2907-2910. KOJI ONOMITSU, IMRAN MAHBOOB,
HAJIME OKAMOTO, AND HIROSHI YAMAGUCHI MECHANICALLY DETECTED
FIELD-INDUCED MN SPIN ROTATION IN GAMNAS J. P. NOH, D. W. JUNG, A. Z. M.
TOUHIDUL ISLAM, AND N. OTSUKA POSSIBLE ANOMALOUS HALL EFFECT OF BE/SI
PAIR DELTA-DOPED GAAS STRUCTURES M. YOKOYAMA, S. OHYA, AND M. TANAKA
MAGNETIC ANISOTROPY OF FERROMAGNETIC SEMICONDUCTOR [(LNGA)MN]AS THIN
FILMS HARUKI SANADA, TETSUOMI SOGAWA, HIDEKI GOTOH, HIDEHIKO KAMADA,
HIROSHI YAMAGUCHI, AND HIDETOSHI NAKANO SPIN SELECTIVE OPTICAL
EXCITATION IN CHARGE-TUNABLE GAAS QUANTUM DOTS F. AISINA, J. A. H.
STOTZ, R. HEY, U. JAHN, AND P. V. SANTOS ACOUSTIC CHARGE AND SPIN
TRANSPORT IN GAAS QUANTUM WIRES CHARACTERIZATION, NANOPROBE AND
NANOMECHANICS PAGE 2911-2916 PAGE 2917-2919. PAGE 2920-2922 PAGE
2923-2925. PAGE 2926-2928 PAGE 2929-2931 PAGE 2932-2934. PAGE 2935-2937.
M. NAKAYAMA AND K. MIZOGUCHI (INVITED) INTERACTIONS BETWEEN COHERENT
OPTICAL PHONONS AND EXCITONIC QUANTUM BEATS IN GAAS/ALAS MULTIPLE
QUANTUM WELLS: STRATEGY FOR ENHANCEMENT OF TERAHERTZ RADIATION FROM
COHERENT OPTICAL PHONONS R. HEY, U. JAHN, QIAN WAN, AND A. TRAMPERT
QUANTUM WELL AND CAVITY STRUCTURES GROWN ON (110)GAAS BY MBE HAJIME
OKAMOTO, DAISUKE ITO, KOJI ONOMITSU, AND HIROSHI YAMAGUCHI THERMOELASTIC
DAMPING IN GAAS MICROMECHANICAL RESONATORS S. SANORPIM, P. PANPECH, S.
VIJARNWANNALUK, F. NAKAJIMA, S. KUBOYA, R. KATAYAMA, AND K. ONABE
INCORPORATION OF N IN HIGH N-CONTENT GAASN FILMS INVESTIGATED BY RAMAN
SCATTERING M. KANIEWSKA, 0. ENGSTROEM, M. KACZMARCZYK, B. SURMA, W. JUNG,
AND G. ZAREMBA ELECTRICAL STUDY OF INAS/GAAS QUANTUM DOTS WITH TWO
DIFFERENT ENVIRONMENTS H. OGAWA, N. UCHIYAMA, N. KAMATA, AND Y. ARAKAWA
LASER-INDUCED FORMATION OF NONRADIATIVE CENTERS OBSERVED BY
TWO-WAVELENGTH EXCITED PHOTOLUMINESCENCE K. OHNISHI, M. SHIBA, M.
YAMAKAGE, AND Y. KAJIKAWA REFRACTIVE INDEX OF TLGAAS N. KUMAGAI, K.
WATANABE, M. ISHIDA, Y. NAKATA, N. HATORI, H. SUDO, T. YAMAMOTO, M.
SUGAWARA, AND Y. ARAKAWA PROCESS-FREE ESTIMATION OF THRESHOLD CURRENT
DENSITY OF INAS QUANTUM DOT LASER 2008 WILEY-VCH VERLAG GMBH & CO.
KGAA, WEINHEIM WWW.PSS-C.COM CONTENTS CONTENTS 2685 PAGE 2938-2940 PAGE
2941-2943 PAGE 2944-2946 PAGE 2947-2950 ICHIRO TANAKA, Y. TADA, S.
NAKATANI, K. UNO, M. AZUMA, K. UMEMURA, I. KAMIYA, AND H. SAKAKI
RESONANT TUNNELING OF ELECTRONS THROUGH SINGLE SELF-ASSEMBLED INAS
QUANTUM DOT AT ROOM TEMPERATURE STUDIED WITH CONDUCTIVE AFM TIP M.
FUKUZAWA AND M. YAMADA QUANTITATIVE IMAGING OF RESIDUAL STRAIN PROFILE
IN LARGE DIAMETER GAAS SUBSTRATES Y. OHNO, T. TAISHI, I. YONENAGA, AND
S. TAKEDA ATOMISTIC STRUCTURE OF SI ATOMS AGGLOMERATED NEARBY A STACKING
FAULT IN A COMMERCIAL GAAS:SI J. OKABAYASHI, Y. UENO, AND J. YOSHINO
SIZE CONTROL OF NANOSCALED MNAS DOTS FABRICATED ON SULFUR-PASSIVATED
GAAS(001) GAN AND RELATED SEMICONDUCTORS PAGE 2951-2956 PAGE 2957-295 9
PAGE 2960-2962 PAGE 2963-2965 PAGE 2966-2968 PAGE 2969-2971 PAGE
2972-2975 PAGE 2976-2978 J. JEWELL, L. GRAHAM, M. CROM, K. MARANOWSKI,
J. SMITH, T. FANNING, AND M. SCHNOES (INVITED) COMMERCIAL GALNNAS VCSELS
GROWN BY MBE ATSUSHI NISHIKAWA, KAZUHIDE KUMAKURA, MAKOTO KASU, AND
TOSHIKI MAKIMOTO HIGH-TEMPERATURE (300 C) OPERATION OF NPN-TYPE
GAN/INGAN DOUBLE HETEROJUNCTION BIPOLAR TRANSISTORS CHUANXIN LIAN, HUILI
GRACE XING, YU-CHIA CHANG, AND NICK FICHTENBAUM THE ROLE OF DOPING TYPE
IN SETBACK LAYERS ON WAFER-FUSED ALGAAS/GAAS/GAN HBTS CHRISTOPHER A.
SCHAAKE, NICHOLASA. FICHTENBAUM, CARL J. NEUFELD, STADA KELLER, STEVEN
P. DENBAARS, JAMES S. SPECK, AND UMESH K. MISHRA M-PLANE INGAN/GAN LIGHT
EMITTING DIODES FABRICATED BY MOCVD REGROWTH ON C-PLANE PATTERNED
TEMPLATES T. TANIKAWA, T. HIKOSAKA, Y. HONDA, M. YAMAGUCHI, AND N.
SAWAKI GROWTH OF SEMI-POLAR (11-22)GAN ON A (113)SI SUBSTRATE BY
SELECTIVE MOVPE HIDEKI HIRAYAMA, TOHRU YATABE, NORIMICHI NOGUCHI,
TOMOAKI OHASHI, AND NORIHIKO KAMATA 226-273 NM ALGAN DEEP-ULTRAVIOLET
LIGHT-EMITTING DIODES FABRICATED ON MULTILAYER AIN BUFFERS ON SAPPHIRE
N. TANAKA, H. TAKITA, Y. SUMIDA, AND T. SUZUKI REDUCTION OF SELF-HEATING
IN ALGAN/GAN HFETS USING THICK AIN SURFACE PASSIVATION FILMS K. ITAGAKI,
A. NAKAJIMA, AND K. HORIO REDUCTION OF BUFFER-RELATED CURRENT COLLAPSE
IN GAN FETS UNDER FAVOUR OF A FIELD PLATE WWW.PSS-C.COM 2008 WILEY-VCH
VERLAG GMBH S CO. KGAA, WEINHEIM - W*P 5 3* SW 2686 CONTENTS PAGE
2979-2981 PAGE 2982-2984. PAGE 2985-2987. PAGE 2988-2990. PAGE
2991-2993. PAGE 2994-2997 PAGE 2998-3000. PAGE 3001-3003. PAGE
3004-3007. PAGE 3008-3010. PAGE 3011-3013. PAGE 3014-3016. PAGE
3017-3019. XINHUA WANG, XIAOLIANG WANG, HONGLING XIAO, CHUN FENG,
XIAOYAN WANG, BAOZHU WANG, CUIBAI YANG, JUNXI WANG, CUIMEI WANG, JUNXUE
RAN, GUOXIN HU, AND JINMIN LI HYDROGEN SENSORS BASED ON PT-AIGAN/GAN
BACK-TO-BACK SCHOTTKY DIODE JIAN TANG, XIAOLIANG WANG, HONGLING XIAO,
JUNXUE RAN, CUIMEI WANG, XIAOYAN WANG, GUOXIN HU, AND JINMIN LI
ALGAN/GAN/INGAN/GAN DH-HEMTS STRUCTURE WITH AN AIN INTERLAYER GROWN BY
MOCVD Y. IROKAWA, Y. SAKUMA, AND T. SEKIGUCHI EFFECTS OF SURFACE STATES
ON HYDROGEN SENSING PERFORMANCE OF PT-GAN SCHOTTKY DIODES S. LAWRENCE
SELVARAJ, TSUNEO ITO, YUTAKA TERADA, AND TAKASHI EGAWA AIN/AIGAN/GAN
MIS-HEMTS WITH RECESSED SOURCE/DRAIN OHMIC CONTACT MASAKI INADA, AKIRA
NAKAJIMA, GUANXI PIAO, MITSUAKI SHIMIZU, YOSHIKI YANO, AND AKINORI
UBUKATA DC CHARACTERISTICS OF ALGAN/GAN HIGH ELECTRON MOBILITY
TRANSISTORS R. CUERDO, Y. PEI, F. RECHT, N. FICHTENBAUM, S. KELLER, S.
P. DENBAARS, F. CALLE, AND U. K. MISHRA TEMPERATURE-DEPENDENT
HIGH-FREQUENCY PERFORMANCE OF DEEP SUBMICRON ALGAN/GAN HEMTS T. ITO, M.
YOSHIKAWA, A. WATANABE, AND T. EGAWA TRAP STATES IN N-GAN GROWN ON
ALN/SAPPHIRE TEMPLATE BY MOVPE Y. INOUE, A. TAJIMA, A. ISHIDA, AND H.
MIMURA MORPHOLOGY CONTROL OF GAN NANOWIRES BY VAPOR-LIQUID-SOLID GROWTH
J. U. SEO, S. HASEGAWA, AND H. ASAHI MOLECULAR-BEAM EPITAXY FABRICATION
AND ANALYSIS OF GAN NANORODS ON PATTERNED SILICON-ON-INSULATOR SUBSTRATE
S. TAKEDA, Y. INOUE, A. ISHIDA, AND H. MIMURA GROWTH AND DENSITY CONTROL
OF GAN NANODOTS AND NANOPILLARS NOBUTO MANAGAKI AND NORIO LIZUKA
INFLUENCE OF SI DOPING ON SIZE OF GAN QUANTUM DOTS GROWN BY MOLECULAR
BEAM EPITAXY UNDER GA-RICH CONDITIONS WEN-HAO CHANG, LIN LEE, CHING-YU
CHEN, WEN-CHE TSAI, HSUAN LIN, WU-CHING CHOU, MING-CHIH LEE, AND WEI-KUO
CHEN STRUCTURAL AND OPTICAL PROPERTIES OF INN/GAN NANODOTS GROWN BY
METALORGANIC CHEMICAL VAPOR DEPOSITION HIROKI TOKUNAGA, YASUSHI FUKUDA,
AKINORI UBUKATA, KAZUTADA IKENAGA, YOSHIAKI INAISHI, TAKASHI ORITA,
SATOSHI HASAKA, YUICHIRO KITAMURA, AKIRA YAMAGUCHI, SHUICHI KOSEKI,
KUNIMASA UEMATSU, NOBUYASU TOMITA, NAKAO AKUTSU, AND KOH MATSUMOTO
MULTIWAFER ATMOSPHERIC-PRESSURE MOVPE REACTOR FOR NITRIDE SEMICONDUCTORS
AND EX-SITU DRY CLEANING OF REACTOR COMPONENTS USING CHLORINE GAS FOR
STABLE OPERATION 6 2008 WILEY-VCH VERLAG GMBH & CO. KGAA, WEINHEIM
WWW.PSS-C.COM CONTENTS CONTENTS 2687 PAGE 3020-3022 PAGE 3023-3025 PAGE
3026-3028 PAGE 3029-3031 PAGE 3032-3034 PAGE 3035-3037 PAGE 3038-3041
PAGE 3042-3044 PAGE 3045-3047 PAGE 3048-3050 PAGE 3051-3053 PAGE
3054-3056 PAGE 3057-3059 M. ALI, S. SUIHKONEN, 0. SVENSK, P. T. TOERMAE,
M. SOPANEN, H. LIPSANEN, M. A. ODNOBIYUDOV, AND V. E. BOUGROV STUDY OF
COMPOSITION CONTROL AND CAPPING OF MOVPE GROWN LNGAN/LN X AL Y GA 1 _ X
_ Y N MQW STRUCTURES Y. KAWAI, S. OHSUKA, M. IWAYA, S. KAMIYAMA, H.
AMANO, AND I. AKASAKI INGAN GROWTH ON ZNO(0001) SUBSTRATE BY
METALORGANIC VAPOR PHASE EPITAXY TOHRU HONDA, KENJI WATANABE, KOICHI
SUGIMOTO, MASATOSHI ARAI, AND KAZUHISA TAKEDA FABRICATION OF AIN FILMS
AT LOW TEMPERATURE BY CS-MBE TECHNIQUE V. KAZUKAUSKAS, V. KALENDRA, R.
JASIULIONIS, AND J.-V. VAITKUS EFFECTS OF THE HIGH-ENERGY PROTON
IRRADIATION ON THE PROPERTIES OF GAN IONIZING RADIATION DETECTORS T.
MITSUNAGA, Y. YAGISHITA, M. KUROUCHI, S. KISHIMOTO, J. OSAKA, AND T.
MIZUTANI EVALUATION OF DEEP LEVELS IN GAN GROWN BY RF-MBE ON GAN
TEMPLATE BY CAPACITANCE DLTS J. KANG AND K. J. CHANG THE ELECTRONIC
STRUCTURE OF GA-VACANCY IN MN-DOPED GAN KAZUNOBU KOJIMA, HIROAKI KAMON,
MITSURU FUNATO, AND YOICHI KAWAKAMI THEORETICAL INVESTIGATIONS ON
ANISOTROPIC OPTICAL PROPERTIES IN SEMIPOLAR AND NONPOLAR INGAN QUANTUM
WELLS U. PANYUKOVA, H. SUZUKI, R. TOGASHI, H. MURAKAMI, Y. KUMAGAI, AND
A. KOUKITU FIRST PRINCIPLES STUDY OF THE DECOMPOSITION PROCESSES OF AIN
IN A HYDROGEN ATMOSPHERE RYOTA SENDA, AYA MIURA, TAKESHI KAWASHIMA,
DAISUKE LIDA, TETSUYA NAGAI, MOTOAKI IWAYA, SATOSHI KAMIYAMA, HIROSHI
AMANO, AND ISAMU AKASAKI IMPROVEMENT IN CRYSTALLINE QUALITY OF THICK
GALNN ON M-PLANE 6H-SIC SUBSTRATES USING SIDEWALL EPITAXIAL LATERAL
OVERGROWTH KENTARO NAGAMATSU, NARIHITO OKADA, NAOFUMI KATO, TAKAFUMI
SUMII, AKIRA BANDOH, MOTOAKI IWAYA, SATOSHI KAMIYAMA, HIROSHI AMANO, AND
ISAMU AKASAKI EFFECT OF C-PLANE SAPPHIRE MISORIENTATION ON THE GROWTH OF
AIN BY HIGH-TEMPERATURE MOVPE S. OULD SAAD HAMADY, T. BAGHDADLI, S.
GAUTIER, M. BOUCHAOUR, J. MARTIN, AND A. OUGAZZADEN RAMAN SCATTERING
STUDY OF B X GA.,_ X N GROWTH ON AIN TEMPLATE SUBSTRATE J. R. LEE, C. R.
LU, H. L. LIU, H. H. LIN, AND L W. SUN ELECTRO-MODULATION ENHANCEMENT IN
THE INGANAS/GAAS QUANTUM WELL STRUCTURES SHAOQIANG CHEN, JONGWON SEO,
JUNJI SAWAHATA, AND KATSUHIRO AKIMOTO STRUCTURAL AND OPTICAL PROPERTIES
OF ER DOPED GAN WITH VARIOUS ER CONCENTRATIONS WWW.PSS-C.COM 2008
WILEY-VCH VERLAG GMBH S CO. KGAA, WEINHEIM IS»S 2688 CONTENTS PAGE
3060-3062. PAGE 3063-3065 PAGE 3066-3068 PAGE 3069-3072 PAGE 3073-3075
K. HOSHINO, T. MURATA, M. ARAKI, AND K. TADATOMO FABRICATION OF
GAN-BASED LIGHT EMITTING DIODES USING DIRECT HETEROEPITAXIAL LATERAL
OVERGROWTH ON PATTERNED SAPPHIRE SUBSTRATES WITH THICK SI0 2 MASKS M.
NAKAO, T. SHIMADA, M. WAKABA, N. MOTEGI, A. GOMYO, S. MIZUNO, AND T.
MATSUOKA 1.5-URM EMISSION OF NATURALLY-OXIDIZED INN CRYSTALS GROWN BY
MOVPE T. OKIMOTO, M. TSUKIHARA, K. KATAOKA, A. KATO, K. NISHINO, Y.
NAOI, AND S. SAKAI GAN- AND ALGAN-BASED UV-LEDS ON SAPPHIRE BY
METAL-ORGANIC CHEMICAL VAPOR DEPOSITION HIROTO SEKIGUCHI, KEI KATO,
AKIHIKO KIKUCHI, AND KATSUMI KISHINO EFFECT OF BE-DOPING ON INGAN/GAN
NANOCOLUMN LIGHT-EMITTING DIODE STRUCTURES BY RF-PLASMA-ASSISTED
MOLECULAR-BEAM EPITAXY Y. TANAKA, J. ANDO, D. LIDA, M. IWAYA, S.
KAMIYAMA, H. AMANO, AND I. AKASAKI ALL MOVPE GROWN NITRIDE-BASED LED
HAVING SUB MM UNDERLYING GAN OXIDE SEMICONDUCTORS PAGE 3076-3083 PAGE
3084-3087 PAGE 3088-3090. PAGE 3091-3094 PAGE 3095-3097 PAGE 3098-3100.
M. WILLANDER, P. KLASON, L L. YANG, SAFAA M. AL-HILLI, Q. X. ZHAO, AND
0. NUR (INVITED) ZNO NANOWIRES: CHEMICAL GROWTH, ELECTRODEPOSITION, AND
APPLICATION TO INTRACELLULAR NANO-SENSORS D. J. ROGERS, D. C. LOOK, F.
HOSSEINI TEHERANI, K. MINDER, M. RAZEGHI, A. LARGETEAU, G. DEMAZEAU, J.
MORROD, K. A. PRIOR, A. LUSSON, AND S. HASSANI INVESTIGATIONS OF ZNO
THIN FILMS GROWN ON C-AI 2 0 3 BY PULSED LASER DEPOSITION IN N 2 + 0 2
AMBIENT J. G. LU, S. FUJITA, T. KAWAHARAMURA, H. NISHINAKA, AND Y.
KAMADA JUNCTION PROPERTIES OF NITROGEN-DOPED ZNO THIN FILMS T. IVE, T.
BEN-YAACOV, A. MURAI, H. ASAMIZU, C G. VAN DE WALLE, U. MISHRA, S. P.
DENBAARS, AND J. S. SPECK METALORGANIC CHEMICAL VAPOR DEPOSITION OF
ZNO(0001) THIN FILMS ON GAN(0001) TEMPLATES AND ZNO(0001) SUBSTRATES L.
DIVAY, D. J. ROGERS, A. LUSSON, S. KOSTCHEEV, S. MC MURTRY, G. LERONDEL,
AND F. HOSSEINI TEHERANI STUDIES OF OPTICAL EMISSION IN THE HIGH
INTENSITY PUMPING REGIME OF TOP-DOWN ZNO NANOSTRUCTURES AND THIN FILMS
GROWN ON C-SAPPHIRE SUBSTRATES BY PULSED LASER DEPOSITION TOSHIO KAMIYA,
KENJI NOMURA, MASAHIRO HIRANO, AND HIDEO HOSONO ELECTRONIC STRUCTURE OF
OXYGEN DEFICIENT AMORPHOUS OXIDE SEMICONDUCTOR A-LNGAZN0 4 _ X : OPTICAL
ANALYSES AND FIRST-PRINCIPLE CALCULATIONS 2008 WILEY-VCH VERLAG GMBH &
CO. KGAA, WEINHEIM WWW.PSS-C.COM CONTENTS CONTENTS 2689 PAGE 3101-3103
PAGE 3104-3106 PAGE 3107-3109 PAGE 3110-3112 PAGE 3113-3115 PAGE
3116-3118 PAGE 3119-3121 PAGE 3122-3124 PAGE 3125-3127 PAGE 3128-3131
PAGE 3132-3134 PAGE 3135-3137 PAGE 3138-3140 SATORU TAKAHATA, TAKASHI
IMAO, HISAYUKI NAKANISHI, MUTSUMI SUGIYAMA, AND SHIGEFUSA F. CHICHIBU
HELICON-WAVE-EXCITED PLASMA SPUTTERING DEPOSITION OF CUAI0 2 THIN FILMS
YASUSHI HIROSE, TARO HITOSUGI, JUNPEI KASAI, YUTAKA FURUBAYASHI, KIYOMI
NAKAJIMA, TOYOHIRO CHIKYOW, SEIJI KONUMA, TOSHIHIRO SHIMADA, AND TETSUYA
HASEGAWA FERROMAGNETIC RUTILE COJI^O-^HETEROEPITAXY ON WURTZITE GAN AND
ZNO K. MASUKO, H. SAKIYAMA, A. ASHIDA, T. YOSHIMURA, AND N. FUJIMURA
EFFECTS OF SPONTANEOUS AND PIEZOELECTRIC POLARIZATIONS ON CARRIER
CONFINEMENT AT THE ZN 088 MN 0L2 O/ZNO INTERFACE T. OSHIO, K. MASUKO, A.
ASHIDA, T. YOSHIMURA, AND N. FUJIMURA ELECTRO-OPTIC PROPERTY OF ZNO:MN
EPITAXIAL FILMS TAKAYOSHI OSHIMA AND SHIZUO FUJITA PROPERTIES OF GA 2 0
3 -BASED (LN Y 6A 1 _ X ) 2 0 3 ALLOY THIN FILMS GROWN BY MOLECULAR BEAM
EPITAXY SHIGEO OHIRA AND NAOKI ARAI WET CHEMICAL ETCHING BEHAVIOR OF
SS-GA 2 0 3 SINGLE CRYSTAL H. ENDO, M. SUGIBUCHI, K. TAKAHASHI, S. GOTO,
K. HANE, AND Y. KASHIWABA FABRICATION AND CHARACTERISTICS OF A
PT/MG^ZN^O SCHOTTKY PHOTODIODE ON A ZNO SINGLE CRYSTAL K. KOBAYASHI, Y.
TOMITA, Y. MAEDA, AND H. HANEDA SHALLOW LI-ACCEPTOR LEVELS IN ZNO FILMS
CODOPED WITH LI AND F ATOMS K. YAMAOKA, Y. TERAI, T. YAMAGUCHI, AND Y.
FUJIWARA GROWTH OF TRANSITION-METAL-DOPED ZNO FILMS BY PLASMA-ENHANCED
CVD COMBINED WITH RF SPUTTERING KEH-MOH LIN, KENG-YU CHOU, AND PO-MING
CHEN SPECTROSCOPIC ELLIPSOMETRY STUDY OF ZNO FILMS GROWN ON SILICON
SUBSTRATE YAO DUAN, JUNPENG CUI, XIAOFENG WANG, AND YIPING ZENG GROWTH
OF THICK ZNO FILMS BY METAL-SOURCE VAPOR PHASE EPITAXY SHINGO MASAKI,
HISAYUKI NAKANISHI, MUTSUMI SUGIYAMA, AND SHIGEFUSA F. CHICHIBU
PREPARATION OF ZNO: GA THIN FILMS BY HELICON-WAVE-EXCITED PLASMA
SPUTTERING TOSHIYUKI KAWAHARAMURA AND SHIZUO FUJITA AN APPROACH FOR
SINGLE CRYSTALLINE ZINC OXIDE THIN FILMS WITH FINE CHANNEL MIST CHEMICAL
VAPOR DEPOSITION METHOD WWW.PSS-C.COM ) 2008 WILEY-VCH VERLAG GMBH & CO.
KGAA, WEINHEIM PIS115- 2690 CONTENTS PAGE 3141-3143 KAZUYUKI UNO,
TADAYUKI KANDA, MASASHI AISU, TAKAYUKI ASAOKA, TSUTOMU INA, ICHIRO
TANAKA, AND MUNENORI YAMASHITA INVESTIGATION OF ELECTRIC DOUBLE LAYER
AND CRYSTAL SHAPES OF ELECTROCHEMICALLY GROWN ZINC OXIDE SIGE AND
RELATED SEMICONDUCTORS PAGE 3144-3149 PAGE 3150-3152 PAGE 3153-3155.
PAGE 3156-3158. PAGE 3159-3161 PAGE 3162-3164. E. KASPER AND M. OEHME
{INVITED) HIGH SPEED GERMANIUM DETECTORS ON SI N. ONOJIMA, A. KASAMATSU,
N. HIROSE, T. MIMURA, AND T. MATSUI SUB-100 NM GATE-LENGTH SIGE/SI
MIS-HFET USING CAT-CVD SIN Y. AZUMA, T. MORI, AND H. TSUCHIYA DRIVE
CURRENT OF ULTRATHIN GE-ON-INSULATOR N-CHANNEL MOSFETS P. HOWARD, A.
ANDREEV, AND D. A. WILLIAMS DENSITY FUNCTIONAL THEORY CALCULATIONS OF
ELECTRONIC STRUCTURE IN SILICON DOUBLE QUANTUM DOTS SYOUTARO HASHIMOTO,
YOSHIKAZU TERAI, AND YASUFUMI FUJIWARA IMPROVED INITIAL EPITAXIAL GROWTH
OF SS-FESI 2 ON SI(111) SUBSTRATE BY AL-DOPING KYUNGHWAN KIM, JAEKWON
KIM, AND JINWOOK BURM A 5.15-5.35 GHZ BAND 10 W POWER AMPLIFIER USING
SIC MESFETS CARBON RELATED MATERIALS PAGE 3165-3168 PAGE 3169-3171 PAGE
3172-3174. PAGE 3175-3177 MAKOTO KASU, KENJI UEDA, HIROYUKI KAGESHIMA,
AND YOSHITAKA TANIYASU (INVITED) DIAMOND RF FETS AND OTHER APPROACHES TO
ELECTRONICS K. OHARA, Y. NEO, H. MIMURA, Y. INOUE, AND A. ISHIDA SIZE
CONTROL OF FE NANOPARTICLES FOR CARBON NANOTUBE GROWTH USING CARBONYL
IRON VAPOUR V. KAZUKAUSKAS, V. KALENDRA, C. W. BUMBY, B. M. LUDBROOK,
AND A. B. KAISER ELECTRICAL CONDUCTIVITY OF CARBON NANOTUBES AND
POLYSTYRENE COMPOSITES KENJI UEDA, YOSHIHARU YAMAUCHI, AND MAKOTO KASU
DIAMOND FETS ON BORON-IMPLANTED AND HIGH-PRESSURE AND HIGH-TEMPERATURE
ANNEALED HOMOEPITAXIAL DIAMOND ORGANIC SEMICONDUCTORS AND OTHER SOFT
MATERIALS PAGE 3178-3180 S. HOSHINO, K. SUEMORI, M. YOSHIDA, S. UEMURA,
T. KODZASA, N. TAKADA, AND T. KAMATA DEVICE CHARACTERISTICS OF BACK
CHANNEL-MODIFIED ORGANIC THIN-FILM TRANSISTORS 2008 WILEY-VCH VERLAG
GMBH S CO. KGAA, WEINHEIM WWW.PSS-C.COM CONTENTS CONTENTS 2691 PAGE
3181-3183 PAGE 3184-3186 PAGE 3187-3190 PAGE 3191-3193 PAGE 3194-3196
PAGE 3197-3199 MASATOSHI KITAMURA, YASUTAKA KUZUMOTO, MASAKAZU KAMURA,
SHIGERU AOMORI, JONG HO NA, AND YASUHIKO ARAKAWA LOW-VOLTAGE-OPERATING
FULLERENE C 60 THIN-FILM TRANSISTORS WITH VARIOUS SURFACE TREATMENTS N.
TAKADA AND T. KAMATA STUDIES ON DYNAMICS OF CHARGE CARRIER IN ORGANIC
ELECTROLUMINESCENT DEVICES T. MORI AND Y. LIDA POLYCRYSTALIIZATION
PHENOMENA OF ORGANIC ALLOY AND MULTILAYER STRUCTURES ON
NAPHTHYL-SUBSTITUTED DIAMINE-BASED HOLE TRANSPORT LAYER FOR ORGANIC
LIGHT-EMITTING DIODE H. YAMAGUCHI, M. KOMORIYA, AND N. KAMATA IMPROVED
EL CHARACTERISTICS OF POLYFLUORENE/PBD-MIXED LAYER BY WET PROCESS
TAKESHI YAMAO, KAZUNORI YAMAMOTO, TOMOHARU MIKI, HIROSHI AKAGAMI,
YOSHIHIRO NISHIMOTO, AND SHU HOTTA POLARIZED LASER OSCILLATION FROM
POLYGON CRYSTALS OF THIOPHENE/PHENYLENE CO-OLIGOMERS GROWN BY
LIQUID-PHASE GROWTH C. R. LU, R. C SHIH, H. K. HSU, W. Y. CHOU, Y. S.
MAI, S. W. CHU, AND S. Y. LIN ELECTROMODULATED OPTICAL PROPERTIES OF THE
SILVER/PENTACENE/ITO THIN FILM STRUCTURE PAGE 3204-3205 INFORMATION FOR
AUTHORS PHYSICA STATUS SOLIDI (C) IS INDEXED IN CAMBRIDGE SCIENTIFIC
ABSTRACTS; CSA TECHNOLOGY RESEARCH DATABASE (CSA/CIG); CHEMICAL
ABSTRACTS SERVICE/SCIFINDER (ACS); COMPENDEX (ELSEVIER); FIZ KARLSRUHE
DATABASES (FIZ KARLSRUHE); GOOGLE SCHOLAR; INSPEC; PHYSICS ABSTRACTS
(IET); ISI INDEX TO SCIENTIFIC & TECHNICAL PROCEEDINGS; PASCAL DATABASE
(INIST/CNRS); SCOPUS (ELSEVIER); VINITI (ALL-RUSSIAN INSTITUTE OF
SCIENCE & TECHNOLOGICAL INFORMATION). WWW.PSS-C.COM 2008 WILEY-VCH
VERLAG GMBH & CO. KGAA, WEINHEIM
|
| any_adam_object | 1 |
| author_corporate | International Symposium on Compound Semiconductors Kyōto |
| author_corporate_role | aut |
| author_facet | International Symposium on Compound Semiconductors Kyōto |
| author_sort | International Symposium on Compound Semiconductors Kyōto |
| building | Verbundindex |
| bvnumber | BV035654661 |
| callnumber-first | Q - Science |
| callnumber-label | QC176 |
| callnumber-raw | QC176.A1 |
| callnumber-search | QC176.A1 |
| callnumber-sort | QC 3176 A1 |
| callnumber-subject | QC - Physics |
| ctrlnum | (OCoLC)241299191 (DE-599)GBV573149127 |
| format | Conference Proceeding Book |
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| genre | (DE-588)1071861417 Konferenzschrift gnd-content |
| genre_facet | Konferenzschrift |
| id | DE-604.BV035654661 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T21:42:33Z |
| institution | BVB |
| institution_GND | (DE-588)6521541-2 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-017709180 |
| oclc_num | 241299191 |
| open_access_boolean | |
| owner | DE-706 |
| owner_facet | DE-706 |
| physical | S. 2679 - 3205 Ill., graph. Darst. 28 cm |
| publishDate | 2008 |
| publishDateSearch | 2008 |
| publishDateSort | 2008 |
| publisher | Wiley-VCH |
| record_format | marc |
| series2 | Physica status solidi : C, Current topics in solid state physics |
| spelling | International Symposium on Compound Semiconductors 34 2007 Kyōto Verfasser (DE-588)6521541-2 aut Papers presented at the 34th International Symposium on Compound Semiconductors (ISCS-2007), Kyoto, Japan, 15 - 18 October 2007 guest ed.: Yoshiro Hirayama ... Weinheim Wiley-VCH 2008 S. 2679 - 3205 Ill., graph. Darst. 28 cm txt rdacontent n rdamedia nc rdacarrier Physica status solidi : C, Current topics in solid state physics 5,9 Einzelaufnahme eines Zs.-Heftes Semicondutores (congressos) larpcal Compound semiconductors Congresses Semiconductors Materials Congresses (DE-588)1071861417 Konferenzschrift gnd-content Hirayama, Yoshiro Sonstige oth http://www.gbv.de/dms/ilmenau/toc/573149127.PDF lizenzfrei Inhaltsverzeichnis GBV Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017709180&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Papers presented at the 34th International Symposium on Compound Semiconductors (ISCS-2007), Kyoto, Japan, 15 - 18 October 2007 Semicondutores (congressos) larpcal Compound semiconductors Congresses Semiconductors Materials Congresses |
| subject_GND | (DE-588)1071861417 |
| title | Papers presented at the 34th International Symposium on Compound Semiconductors (ISCS-2007), Kyoto, Japan, 15 - 18 October 2007 |
| title_auth | Papers presented at the 34th International Symposium on Compound Semiconductors (ISCS-2007), Kyoto, Japan, 15 - 18 October 2007 |
| title_exact_search | Papers presented at the 34th International Symposium on Compound Semiconductors (ISCS-2007), Kyoto, Japan, 15 - 18 October 2007 |
| title_full | Papers presented at the 34th International Symposium on Compound Semiconductors (ISCS-2007), Kyoto, Japan, 15 - 18 October 2007 guest ed.: Yoshiro Hirayama ... |
| title_fullStr | Papers presented at the 34th International Symposium on Compound Semiconductors (ISCS-2007), Kyoto, Japan, 15 - 18 October 2007 guest ed.: Yoshiro Hirayama ... |
| title_full_unstemmed | Papers presented at the 34th International Symposium on Compound Semiconductors (ISCS-2007), Kyoto, Japan, 15 - 18 October 2007 guest ed.: Yoshiro Hirayama ... |
| title_short | Papers presented at the 34th International Symposium on Compound Semiconductors (ISCS-2007), Kyoto, Japan, 15 - 18 October 2007 |
| title_sort | papers presented at the 34th international symposium on compound semiconductors iscs 2007 kyoto japan 15 18 october 2007 |
| topic | Semicondutores (congressos) larpcal Compound semiconductors Congresses Semiconductors Materials Congresses |
| topic_facet | Semicondutores (congressos) Compound semiconductors Congresses Semiconductors Materials Congresses Konferenzschrift |
| url | http://www.gbv.de/dms/ilmenau/toc/573149127.PDF http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=017709180&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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