Interface-phenomena in 3C-SiC heteroepitaxy on silicon:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Aachen
Shaker
2011
|
| Schriftenreihe: | Berichte aus der Halbleitertechnik
|
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | 160 S. Ill., graph. Darst. |
| ISBN: | 9783844001792 |
Internformat
MARC
| LEADER | 00000nam a2200000 c 4500 | ||
|---|---|---|---|
| 001 | BV039551557 | ||
| 003 | DE-604 | ||
| 005 | 20120116 | ||
| 007 | t | ||
| 008 | 110829s2011 ad|| m||| 00||| eng d | ||
| 015 | |a 11,N32 |2 dnb | ||
| 016 | 7 | |a 1014094542 |2 DE-101 | |
| 020 | |a 9783844001792 |c Pb. : EUR 48.80 (DE), EUR 48.80 (AT), sfr 97.60 (freier Pr.) |9 978-3-8440-0179-2 | ||
| 035 | |a (OCoLC)750973362 | ||
| 035 | |a (DE-599)DNB1014094542 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-29 |a DE-29T |a DE-83 | ||
| 082 | 0 | |a 537.6226 |2 22//ger | |
| 084 | |a ZN 3460 |0 (DE-625)157317: |2 rvk | ||
| 084 | |a 621.3 |2 sdnb | ||
| 084 | |a 530 |2 sdnb | ||
| 100 | 1 | |a Hens, Philip |e Verfasser |4 aut | |
| 245 | 1 | 0 | |a Interface-phenomena in 3C-SiC heteroepitaxy on silicon |c Philip Hens |
| 264 | 1 | |a Aachen |b Shaker |c 2011 | |
| 300 | |a 160 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 0 | |a Berichte aus der Halbleitertechnik | |
| 502 | |a Zugl.: Erlangen-Nürnberg, Univ., Diss., 2011 | ||
| 650 | 0 | 7 | |a Halbleitersubstrat |0 (DE-588)4158813-7 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Heteroepitaxie |0 (DE-588)4260178-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Silicium |0 (DE-588)4077445-4 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Siliciumcarbid |0 (DE-588)4055009-6 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)4113937-9 |a Hochschulschrift |2 gnd-content | |
| 689 | 0 | 0 | |a Siliciumcarbid |0 (DE-588)4055009-6 |D s |
| 689 | 0 | 1 | |a Heteroepitaxie |0 (DE-588)4260178-2 |D s |
| 689 | 0 | 2 | |a Silicium |0 (DE-588)4077445-4 |D s |
| 689 | 0 | 3 | |a Halbleitersubstrat |0 (DE-588)4158813-7 |D s |
| 689 | 0 | |5 DE-604 | |
| 856 | 4 | 2 | |m DNB Datenaustausch |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024403426&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-024403426 | ||
Datensatz im Suchindex
| _version_ | 1804148371979501568 |
|---|---|
| adam_text | IMAGE 1
1 INTRODUCTION 11
1 EINLEITUNG 13
2 FUNDAMENTALS 15
2.1 CUBIC SILICON CARBIDE 15
2.1.1 POLYTYPISM OF SIC 15
2.1.2 PROPERTIES OF THE CUBIC PHASE 17
2.1.3 GROWTH AND TECHNOLOGY 18
2.1.4 TYPICAL DEFECTS IN 3C-SIC 20
2.2 CHEMICAL VAPOR DEPOSITION FOR EPITAXY 22
2.2.1 DEFINITION OF CVD AND (HETERO-) EPITAXY 22
2.2.2 PRINCIPLE OF CVD 22
2.2.3 PRECURSOR CHEMISTRY AND SPEED LIMITING STEP 24
2.2.4 CVD SYSTEMS AND TECHNOLOGY 26
2.2.5 PARAMETERS OF CVD AND PROCESS DESIGN 29
2.3 RAPID THERMAL ANNEALING 32
2.4 CHARACTERIZATION PROCEDURES 33
2.4.1 OPTICAL MICROSCOPY 33
2.4.2 X-RAY DIFFRACTION 33
2.4.3 SCANNING ELECTRON MICROSCOPY 36
2.4.4 TRANSMISSION ELECTRON MICROSCOPY 37
2.4.5 ATOMIC FORCE MICROSCOPY 39
2.5 SEEDING AND GROWTH 41
2.5.1 LATTICE MISFIT 41
2.5.2 GROWTH AND GROWTH MODES 43
2.5.3 TAMMANN THEORY 45
BIBLIOGRAFISCHE INFORMATIONEN HTTP://D-NB.INFO/1014094542
DIGITALISIERT DURCH
IMAGE 2
2.5.4 DIFFUSION AT THE INTERFACE 47
2.5.5 THEORY OF VOID FORMATION 48
2.6 FAST SUBLIMATION GROWTH PROCESS 50
2.6.1 BASICS 50
2.6.2 COMPARISON TO PVT TECHNIQUE 51
2.6.3 PARAMETERS FOR 3C SIC GROWTH 52
2.6.4 EXPERIMENTAL PROCEDURE FSGP 53
3 LITERATURE REVIEW ON 3C-SIC GROWTH 54
3.1 CVD HETEROEPITAXY OF 3C-SIC ON SILICON 54
3.2 OTHER APPROACHES FOR 3C-SIC GROWTH 57
3.3 TYPICAL DEFECTS IN CUBIC SILICON CARBIDE 58
3.4 APPLICATIONS OF CUBIC SILICON CARBIDE 59
4 EXPERIMENTAL RESULTS AND DISCUSSION 60
4.1 CLEANING OF THE SUBSTRATE 60
4.1.1 WET CHEMICAL CLEANING 60
4.1.2 IN-SITU CLEANING IN HOT HYDROGEN 64
4.1.3 INFLUENCE OF CARBON PARTICLES DURING HOT-HYDROGEN ETCHING 69
4.1.4 APPLICATION OF CP4 ETCH 74
4.2 EX-SITU CARBONIZATION FOR SEED LAYER GENERATION 77
4.2.1 TEST OF PRINCIPLE 77
4.2.2 PROCESS WITH IN-SITU ANNEALING 80
4.2.3 PROCESS WITH EXTERNAL RAPID THERMAL ANNEALING 82
4.2.4 THEORY FOR VOID GENERATION 83
4.3 INFLUENCE OF RAMP-UP RATE ON LAYER QUALITY 86
4.3.1 APPLICATION OF DIFFERENT RAMP SPEEDS DURING CARBONIZATION 87
4.3.2 IMPLEMENTATION OF WAITING STEPS DURING HEATING UP 92
IMAGE 3
4.3.3 USE OF RAPID THERMAL ANNEALING 95
4.3.4 EXPLANATION OF THE RESULTS BY TAMMANN THEORY 98
4.4 STUDY OF THE SILICON CARBIDE - SILICON INTERFACE 102
4.4.1 CROSS SECTION TEM ANALYSIS 102
4.4.2 FOURIER FILTERED IMAGING AND DISLOCATION STRUCTURES 104
4.4.3 INTERMEDIATE LAYER 106
4.4.4 INTERFACE ROUGHNESS 107
4.5 GROWTH ON WET-CHEMICALLY TEXTURED SUBSTRATES 109
4.5.1 GENERATION OF PYRAMIDAL TEXTURE BY WET CHEMICAL ETCHING 109
4.5.2 SEEDING ON PYRAMIDAL SIDE FACETS 110
4.5.3 INTERMEDIATE STAGE AND MISSING OVERGROWTH MECHANISM 113
5 SUPPLEMENT: GROWTH OF THICK LAYERS BY FSGP ON CVD-TEMPLATES 118
5.1 THICKENING OF CVD GROWN LAYERS ON SILICON 118
5.2 FABRICATION OF FREESTANDING 3C-SIC MATERIAL 119
5.3 QUALITY IMPROVEMENT DURING FSGP 121
5.4 DEFECTS LIMITING THE LAYER QUALITY 127
6 SUMMARY 131
6 ZUSAMMENFASSUNG 134
7 REFERENCES 137
8 LIST OF FIGURES 149
9 LIST OF OWN PUBLICATION 157
|
| any_adam_object | 1 |
| author | Hens, Philip |
| author_facet | Hens, Philip |
| author_role | aut |
| author_sort | Hens, Philip |
| author_variant | p h ph |
| building | Verbundindex |
| bvnumber | BV039551557 |
| classification_rvk | ZN 3460 |
| ctrlnum | (OCoLC)750973362 (DE-599)DNB1014094542 |
| dewey-full | 537.6226 |
| dewey-hundreds | 500 - Natural sciences and mathematics |
| dewey-ones | 537 - Electricity and electronics |
| dewey-raw | 537.6226 |
| dewey-search | 537.6226 |
| dewey-sort | 3537.6226 |
| dewey-tens | 530 - Physics |
| discipline | Physik Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Thesis Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01905nam a2200481 c 4500</leader><controlfield tag="001">BV039551557</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20120116 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">110829s2011 ad|| m||| 00||| eng d</controlfield><datafield tag="015" ind1=" " ind2=" "><subfield code="a">11,N32</subfield><subfield code="2">dnb</subfield></datafield><datafield tag="016" ind1="7" ind2=" "><subfield code="a">1014094542</subfield><subfield code="2">DE-101</subfield></datafield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9783844001792</subfield><subfield code="c">Pb. : EUR 48.80 (DE), EUR 48.80 (AT), sfr 97.60 (freier Pr.)</subfield><subfield code="9">978-3-8440-0179-2</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)750973362</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)DNB1014094542</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29</subfield><subfield code="a">DE-29T</subfield><subfield code="a">DE-83</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">537.6226</subfield><subfield code="2">22//ger</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">ZN 3460</subfield><subfield code="0">(DE-625)157317:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">621.3</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">530</subfield><subfield code="2">sdnb</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Hens, Philip</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Interface-phenomena in 3C-SiC heteroepitaxy on silicon</subfield><subfield code="c">Philip Hens</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Aachen</subfield><subfield code="b">Shaker</subfield><subfield code="c">2011</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">160 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="0" ind2=" "><subfield code="a">Berichte aus der Halbleitertechnik</subfield></datafield><datafield tag="502" ind1=" " ind2=" "><subfield code="a">Zugl.: Erlangen-Nürnberg, Univ., Diss., 2011</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleitersubstrat</subfield><subfield code="0">(DE-588)4158813-7</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Heteroepitaxie</subfield><subfield code="0">(DE-588)4260178-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)4113937-9</subfield><subfield code="a">Hochschulschrift</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Siliciumcarbid</subfield><subfield code="0">(DE-588)4055009-6</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Heteroepitaxie</subfield><subfield code="0">(DE-588)4260178-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="2"><subfield code="a">Silicium</subfield><subfield code="0">(DE-588)4077445-4</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="3"><subfield code="a">Halbleitersubstrat</subfield><subfield code="0">(DE-588)4158813-7</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">DNB Datenaustausch</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024403426&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-024403426</subfield></datafield></record></collection> |
| genre | (DE-588)4113937-9 Hochschulschrift gnd-content |
| genre_facet | Hochschulschrift |
| id | DE-604.BV039551557 |
| illustrated | Illustrated |
| indexdate | 2024-07-10T00:06:05Z |
| institution | BVB |
| isbn | 9783844001792 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-024403426 |
| oclc_num | 750973362 |
| open_access_boolean | |
| owner | DE-29 DE-29T DE-83 |
| owner_facet | DE-29 DE-29T DE-83 |
| physical | 160 S. Ill., graph. Darst. |
| publishDate | 2011 |
| publishDateSearch | 2011 |
| publishDateSort | 2011 |
| publisher | Shaker |
| record_format | marc |
| series2 | Berichte aus der Halbleitertechnik |
| spelling | Hens, Philip Verfasser aut Interface-phenomena in 3C-SiC heteroepitaxy on silicon Philip Hens Aachen Shaker 2011 160 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Berichte aus der Halbleitertechnik Zugl.: Erlangen-Nürnberg, Univ., Diss., 2011 Halbleitersubstrat (DE-588)4158813-7 gnd rswk-swf Heteroepitaxie (DE-588)4260178-2 gnd rswk-swf Silicium (DE-588)4077445-4 gnd rswk-swf Siliciumcarbid (DE-588)4055009-6 gnd rswk-swf (DE-588)4113937-9 Hochschulschrift gnd-content Siliciumcarbid (DE-588)4055009-6 s Heteroepitaxie (DE-588)4260178-2 s Silicium (DE-588)4077445-4 s Halbleitersubstrat (DE-588)4158813-7 s DE-604 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024403426&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Hens, Philip Interface-phenomena in 3C-SiC heteroepitaxy on silicon Halbleitersubstrat (DE-588)4158813-7 gnd Heteroepitaxie (DE-588)4260178-2 gnd Silicium (DE-588)4077445-4 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| subject_GND | (DE-588)4158813-7 (DE-588)4260178-2 (DE-588)4077445-4 (DE-588)4055009-6 (DE-588)4113937-9 |
| title | Interface-phenomena in 3C-SiC heteroepitaxy on silicon |
| title_auth | Interface-phenomena in 3C-SiC heteroepitaxy on silicon |
| title_exact_search | Interface-phenomena in 3C-SiC heteroepitaxy on silicon |
| title_full | Interface-phenomena in 3C-SiC heteroepitaxy on silicon Philip Hens |
| title_fullStr | Interface-phenomena in 3C-SiC heteroepitaxy on silicon Philip Hens |
| title_full_unstemmed | Interface-phenomena in 3C-SiC heteroepitaxy on silicon Philip Hens |
| title_short | Interface-phenomena in 3C-SiC heteroepitaxy on silicon |
| title_sort | interface phenomena in 3c sic heteroepitaxy on silicon |
| topic | Halbleitersubstrat (DE-588)4158813-7 gnd Heteroepitaxie (DE-588)4260178-2 gnd Silicium (DE-588)4077445-4 gnd Siliciumcarbid (DE-588)4055009-6 gnd |
| topic_facet | Halbleitersubstrat Heteroepitaxie Silicium Siliciumcarbid Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=024403426&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| work_keys_str_mv | AT hensphilip interfacephenomenain3csicheteroepitaxyonsilicon |