Electromigration in metals: fundamentals to nano-interconnects
Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Cambridge ; New York, NY
Cambridge University Pres
2022
|
| Schlagworte: | |
| Online-Zugang: | BSB01 BTU01 FHN01 Volltext |
| Zusammenfassung: | Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers |
| Beschreibung: | Title from publisher's bibliographic system (viewed on 07 Apr 2022) Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids |
| Beschreibung: | 1 Online-Ressource (xiii, 417 Seiten) |
| ISBN: | 9781139505819 |
| DOI: | 10.1017/9781139505819 |
Internformat
MARC
| LEADER | 00000nmm a2200000zc 4500 | ||
|---|---|---|---|
| 001 | BV048311134 | ||
| 003 | DE-604 | ||
| 005 | 00000000000000.0 | ||
| 007 | cr|uuu---uuuuu | ||
| 008 | 220704s2022 |||| o||u| ||||||eng d | ||
| 020 | |a 9781139505819 |c Online |9 978-1-139-50581-9 | ||
| 024 | 7 | |a 10.1017/9781139505819 |2 doi | |
| 035 | |a (ZDB-20-CBO)CR9781139505819 | ||
| 035 | |a (OCoLC)1335400541 | ||
| 035 | |a (DE-599)BVBBV048311134 | ||
| 040 | |a DE-604 |b ger |e rda | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-12 |a DE-92 | ||
| 082 | 0 | |a 621.3815 | |
| 100 | 1 | |a Ho, P. S. |d 1936- |0 (DE-588)1261771370 |4 aut | |
| 245 | 1 | 0 | |a Electromigration in metals |b fundamentals to nano-interconnects |c Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev |
| 264 | 1 | |a Cambridge ; New York, NY |b Cambridge University Pres |c 2022 | |
| 300 | |a 1 Online-Ressource (xiii, 417 Seiten) | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b c |2 rdamedia | ||
| 338 | |b cr |2 rdacarrier | ||
| 500 | |a Title from publisher's bibliographic system (viewed on 07 Apr 2022) | ||
| 500 | |a Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids | ||
| 520 | |a Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers | ||
| 650 | 4 | |a Interconnects (Integrated circuit technology) / Materials | |
| 650 | 4 | |a Metals / Electric properties | |
| 650 | 4 | |a Electrodiffusion | |
| 700 | 1 | |a Hu, Chao-Kun |d 1946- |0 (DE-588)1261771826 |4 aut | |
| 700 | 1 | |a Gall, Martin |d 1967- |0 (DE-588)1261772830 |4 aut | |
| 700 | 1 | |a Sucharev, Valerij |d 1952- |0 (DE-588)1261774086 |4 aut | |
| 776 | 0 | 8 | |i Erscheint auch als |n Druck-Ausgabe |z 978-1-107-03238-5 |
| 856 | 4 | 0 | |u https://doi.org/10.1017/9781139505819 |x Verlag |z URL des Erstveröffentlichers |3 Volltext |
| 912 | |a ZDB-20-CBO | ||
| 999 | |a oai:aleph.bib-bvb.de:BVB01-033690713 | ||
| 966 | e | |u https://doi.org/10.1017/9781139505819 |l BSB01 |p ZDB-20-CBO |q BSB_PDA_CBO |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1017/9781139505819 |l BTU01 |p ZDB-20-CBO |q BTU_PDA_CBO |x Verlag |3 Volltext | |
| 966 | e | |u https://doi.org/10.1017/9781139505819 |l FHN01 |p ZDB-20-CBO |q FHN_PDA_CBO |x Verlag |3 Volltext | |
Datensatz im Suchindex
| _version_ | 1804184161624260608 |
|---|---|
| adam_txt | |
| any_adam_object | |
| any_adam_object_boolean | |
| author | Ho, P. S. 1936- Hu, Chao-Kun 1946- Gall, Martin 1967- Sucharev, Valerij 1952- |
| author_GND | (DE-588)1261771370 (DE-588)1261771826 (DE-588)1261772830 (DE-588)1261774086 |
| author_facet | Ho, P. S. 1936- Hu, Chao-Kun 1946- Gall, Martin 1967- Sucharev, Valerij 1952- |
| author_role | aut aut aut aut |
| author_sort | Ho, P. S. 1936- |
| author_variant | p s h ps psh c k h ckh m g mg v s vs |
| building | Verbundindex |
| bvnumber | BV048311134 |
| collection | ZDB-20-CBO |
| ctrlnum | (ZDB-20-CBO)CR9781139505819 (OCoLC)1335400541 (DE-599)BVBBV048311134 |
| dewey-full | 621.3815 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.3815 |
| dewey-search | 621.3815 |
| dewey-sort | 3621.3815 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| discipline_str_mv | Elektrotechnik / Elektronik / Nachrichtentechnik |
| doi_str_mv | 10.1017/9781139505819 |
| format | Electronic eBook |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>03441nmm a2200469zc 4500</leader><controlfield tag="001">BV048311134</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">00000000000000.0</controlfield><controlfield tag="007">cr|uuu---uuuuu</controlfield><controlfield tag="008">220704s2022 |||| o||u| ||||||eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9781139505819</subfield><subfield code="c">Online</subfield><subfield code="9">978-1-139-50581-9</subfield></datafield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1017/9781139505819</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(ZDB-20-CBO)CR9781139505819</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)1335400541</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV048311134</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rda</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-12</subfield><subfield code="a">DE-92</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">621.3815</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ho, P. S.</subfield><subfield code="d">1936-</subfield><subfield code="0">(DE-588)1261771370</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electromigration in metals</subfield><subfield code="b">fundamentals to nano-interconnects</subfield><subfield code="c">Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Cambridge ; New York, NY</subfield><subfield code="b">Cambridge University Pres</subfield><subfield code="c">2022</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 Online-Ressource (xiii, 417 Seiten)</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Title from publisher's bibliographic system (viewed on 07 Apr 2022)</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Interconnects (Integrated circuit technology) / Materials</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metals / Electric properties</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Electrodiffusion</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Hu, Chao-Kun</subfield><subfield code="d">1946-</subfield><subfield code="0">(DE-588)1261771826</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Gall, Martin</subfield><subfield code="d">1967-</subfield><subfield code="0">(DE-588)1261772830</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Sucharev, Valerij</subfield><subfield code="d">1952-</subfield><subfield code="0">(DE-588)1261774086</subfield><subfield code="4">aut</subfield></datafield><datafield tag="776" ind1="0" ind2="8"><subfield code="i">Erscheint auch als</subfield><subfield code="n">Druck-Ausgabe</subfield><subfield code="z">978-1-107-03238-5</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://doi.org/10.1017/9781139505819</subfield><subfield code="x">Verlag</subfield><subfield code="z">URL des Erstveröffentlichers</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">ZDB-20-CBO</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-033690713</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1017/9781139505819</subfield><subfield code="l">BSB01</subfield><subfield code="p">ZDB-20-CBO</subfield><subfield code="q">BSB_PDA_CBO</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1017/9781139505819</subfield><subfield code="l">BTU01</subfield><subfield code="p">ZDB-20-CBO</subfield><subfield code="q">BTU_PDA_CBO</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="966" ind1="e" ind2=" "><subfield code="u">https://doi.org/10.1017/9781139505819</subfield><subfield code="l">FHN01</subfield><subfield code="p">ZDB-20-CBO</subfield><subfield code="q">FHN_PDA_CBO</subfield><subfield code="x">Verlag</subfield><subfield code="3">Volltext</subfield></datafield></record></collection> |
| id | DE-604.BV048311134 |
| illustrated | Not Illustrated |
| index_date | 2024-07-03T20:09:33Z |
| indexdate | 2024-07-10T09:34:56Z |
| institution | BVB |
| isbn | 9781139505819 |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-033690713 |
| oclc_num | 1335400541 |
| open_access_boolean | |
| owner | DE-12 DE-92 |
| owner_facet | DE-12 DE-92 |
| physical | 1 Online-Ressource (xiii, 417 Seiten) |
| psigel | ZDB-20-CBO ZDB-20-CBO BSB_PDA_CBO ZDB-20-CBO BTU_PDA_CBO ZDB-20-CBO FHN_PDA_CBO |
| publishDate | 2022 |
| publishDateSearch | 2022 |
| publishDateSort | 2022 |
| publisher | Cambridge University Pres |
| record_format | marc |
| spelling | Ho, P. S. 1936- (DE-588)1261771370 aut Electromigration in metals fundamentals to nano-interconnects Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev Cambridge ; New York, NY Cambridge University Pres 2022 1 Online-Ressource (xiii, 417 Seiten) txt rdacontent c rdamedia cr rdacarrier Title from publisher's bibliographic system (viewed on 07 Apr 2022) Introduction to electromigration -- Fundamentals of electromigration -- Thermal stress characteristics and stress induced void formation in aluminium and copper interconnects -- Stress evolution and damage formation in confined metal lines under electric stressing -- Electromigration in Cu interconnect structures -- Scaling effects on microstructure and resistivity of Cu and Co nanointerconnects analysis of electromigration induced stress evolution and voiding in Cu damascene lines with microstructure -- Massive scale statistical studies for electromigration -- Assessment of electromigration damage in large on-chip power grids Learn to assess electromigration reliability and design more resilient chips in this comprehensive and practical resource. Beginning with fundamental physics and building to advanced methodologies, this book enables the reader to develop highly reliable on-chip wiring stacks and power grids. Through a detailed review on the role of microstructure, interfaces and processing on electromigration reliability, as well as characterisation, testing and analysis, the book follows the development of on-chip interconnects from microscale to nanoscale. Practical modeling methodologies for statistical analysis, from simple 1D approximation to complex 3D description, can be used for step-by-step development of reliable on-chip wiring stacks and industrial-grade power/ground grids. This is an ideal resource for materials scientists and reliability and chip design engineers Interconnects (Integrated circuit technology) / Materials Metals / Electric properties Electrodiffusion Hu, Chao-Kun 1946- (DE-588)1261771826 aut Gall, Martin 1967- (DE-588)1261772830 aut Sucharev, Valerij 1952- (DE-588)1261774086 aut Erscheint auch als Druck-Ausgabe 978-1-107-03238-5 https://doi.org/10.1017/9781139505819 Verlag URL des Erstveröffentlichers Volltext |
| spellingShingle | Ho, P. S. 1936- Hu, Chao-Kun 1946- Gall, Martin 1967- Sucharev, Valerij 1952- Electromigration in metals fundamentals to nano-interconnects Interconnects (Integrated circuit technology) / Materials Metals / Electric properties Electrodiffusion |
| title | Electromigration in metals fundamentals to nano-interconnects |
| title_auth | Electromigration in metals fundamentals to nano-interconnects |
| title_exact_search | Electromigration in metals fundamentals to nano-interconnects |
| title_exact_search_txtP | Electromigration in metals fundamentals to nano-interconnects |
| title_full | Electromigration in metals fundamentals to nano-interconnects Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev |
| title_fullStr | Electromigration in metals fundamentals to nano-interconnects Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev |
| title_full_unstemmed | Electromigration in metals fundamentals to nano-interconnects Paul S. Ho, Chao-Kun Hu, Martin Gall, Valeriy Sukharev |
| title_short | Electromigration in metals |
| title_sort | electromigration in metals fundamentals to nano interconnects |
| title_sub | fundamentals to nano-interconnects |
| topic | Interconnects (Integrated circuit technology) / Materials Metals / Electric properties Electrodiffusion |
| topic_facet | Interconnects (Integrated circuit technology) / Materials Metals / Electric properties Electrodiffusion |
| url | https://doi.org/10.1017/9781139505819 |
| work_keys_str_mv | AT hops electromigrationinmetalsfundamentalstonanointerconnects AT huchaokun electromigrationinmetalsfundamentalstonanointerconnects AT gallmartin electromigrationinmetalsfundamentalstonanointerconnects AT sucharevvalerij electromigrationinmetalsfundamentalstonanointerconnects |