Carrier mobility in advanced channel materials using alternative gate dielectrics:
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Abschlussarbeit Buch |
| Sprache: | English |
| Veröffentlicht: |
Jülich
Forschungszentrum Jülich, Zentralbibliothek
2014
|
| Schriftenreihe: | Schriften des Forschungszentrums Jülich
Reihe Information ; 31 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Zsfassung in dt. Sprache |
| Beschreibung: | 115 S. Ill., zahlr. graph. Darst. |
| ISBN: | 9783893369416 |
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Datensatz im Suchindex
| _version_ | 1804152218464550912 |
|---|---|
| adam_text | CONTENT
CHAPTER 1
INTRODUCTION 11
CHAPTER 2
PRINCIPLES OF MOS DEVICES AND EXTRACTION OF THEIR PHYSICAL
PARAMETER 17
2.1 MOS CAPACITOR IN IDEAL CASE 17
2.1.1 THEORETICAL CAPACITANCE OF IDEAL MOS STRUCTURE 20
2.2 NON-IDEAL PROPERTIES IN REAL MOS STRUCTURES AND THEIR EFFECT ON C-V
23
2.2.1 INTERFACE TRAP CHARGES 23
2.2.2 OXIDE CHARGES AND WORK FUNCTION DIFFERENCES: 23
2.3 PRINCIPLES OFMOSFET OPERATION 25
2.3.1 DETERMINATION OF CURRENT-VOLTAGE (I-V) CHARACTERISTICS 27
2.4 ELECTRICAL CHARACTERIZATION 28
2.4.1 MOS CAPACITOR CHARACTERIZATION 29
2.4.2 MOSFET CHARACTERIZATION 31
2.5 HIGH
-K
DIELECTRICS 35
2.5.1 RARE EARTH BASED TERNARY OXIDE 38
CHAPTER 3
RARE-EARTH BASED HIGH DIELECTRIC CONSTANT MATERIALS 41
3.1. SAMPLE PREPARATION 41
3.2. STRUCTURAL CHARACTERIZATION 42
3.2.1 COMPOSITION ANALYSIS BY MEANS OF RUTHERFORD BACKSCATTERING
SPECTROMETRY (RBS) 42
3.2.2 X-RAY DIFFRACTION (XRD) AND X-RAY REFLECTION (XRR) 43
3.2.3 TRANSMISSION ELECTRON MICROSCOPE (TEM) 45
3.2.4 INTERFACE INVESTIGATION BY X-RAY PHOTOELECTRON SPECTROSCOPY (XPS)
45
3.2.5 TIME OF FLIGHT SECONDARY ION MASS SPECTROSCOPY (TOF-SIMS) 48
HTTP://D-NB.INFO/1049163575
_8
3.3 ELECTRICAL CHARACTERIZATION 52
3.3.1 EFFECT OF PDA1 AND PDA2 ON C-V AND I-V 53
3.3.2 ELECTRICAL PROPERTIES OF THE RARE-EARTH BASED TERNARY OXIDES 55
3.4 SUMMARY 60
CHAPTER 4
INTEGRATION OF RARE-EARTH BASED OXIDES INTO MOSFETS 61
4.1 INTRODUCTION 61
4.2 REPLACEMENT GATE PROCESS AND DEVICE FABRICATION 62
4.3. RESULTS AND DISCUSSIONS 67
4.3.1 N-MOSFETS ON SOI 67
4.3.2 N-MOSFETS ON SSOI 76
4.3.3 P-MOSFETS ON SOI 80
4.3.4 GATE INDUCED DRAIN LEAKAGE (GIDL) 84
4.4 SUMMARY 87
CHAPTER 5
SUMMARY 89
BIBLIOGRAPHY 89
ACKNOWLEDGEMENTS 101
LIST OF PUBLICATIONS 105
CONFERENCE COTRIBUTIONS ILL
CURRICULUM VITAE 115
|
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| dewey-ones | 500 - Natural sciences and mathematics |
| dewey-raw | 500 |
| dewey-search | 500 |
| dewey-sort | 3500 |
| dewey-tens | 500 - Natural sciences and mathematics |
| discipline | Allgemeine Naturwissenschaft |
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| isbn | 9783893369416 |
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| series2 | Schriften des Forschungszentrums Jülich : Reihe Information |
| spelling | Durğun Özben, Eylem 1980- Verfasser (DE-588)1045998710 aut Carrier mobility in advanced channel materials using alternative gate dielectrics Eylem Durğun Özben Jülich Forschungszentrum Jülich, Zentralbibliothek 2014 115 S. Ill., zahlr. graph. Darst. txt rdacontent n rdamedia nc rdacarrier Schriften des Forschungszentrums Jülich : Reihe Information 31 Zsfassung in dt. Sprache Zugl.: Aachen, Techn. Hochsch., Diss., 2013 (DE-588)4113937-9 Hochschulschrift gnd-content Schriften des Forschungszentrums Jülich Reihe Information ; 31 (DE-604)BV035800087 31 DNB Datenaustausch application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027310246&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Durğun Özben, Eylem 1980- Carrier mobility in advanced channel materials using alternative gate dielectrics Schriften des Forschungszentrums Jülich |
| subject_GND | (DE-588)4113937-9 |
| title | Carrier mobility in advanced channel materials using alternative gate dielectrics |
| title_auth | Carrier mobility in advanced channel materials using alternative gate dielectrics |
| title_exact_search | Carrier mobility in advanced channel materials using alternative gate dielectrics |
| title_full | Carrier mobility in advanced channel materials using alternative gate dielectrics Eylem Durğun Özben |
| title_fullStr | Carrier mobility in advanced channel materials using alternative gate dielectrics Eylem Durğun Özben |
| title_full_unstemmed | Carrier mobility in advanced channel materials using alternative gate dielectrics Eylem Durğun Özben |
| title_short | Carrier mobility in advanced channel materials using alternative gate dielectrics |
| title_sort | carrier mobility in advanced channel materials using alternative gate dielectrics |
| topic_facet | Hochschulschrift |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=027310246&sequence=000001&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
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