Shallow impurities in semiconductors: proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990
Gespeichert in:
| Weitere Verfasser: | |
|---|---|
| Format: | Tagungsbericht Buch |
| Sprache: | English |
| Veröffentlicht: |
Zürich [u.a.]
Trans Tech Publ.
1991
|
| Schriftenreihe: | Materials science forum
65/66 |
| Schlagworte: | |
| Online-Zugang: | Inhaltsverzeichnis |
| Beschreibung: | Literaturangaben |
| Beschreibung: | 476 S. Ill., graph. Darst. |
| ISBN: | 087849619X |
Internformat
MARC
| LEADER | 00000nam a2200000 cb4500 | ||
|---|---|---|---|
| 001 | BV004658175 | ||
| 003 | DE-604 | ||
| 005 | 20221128 | ||
| 007 | t | ||
| 008 | 911217s1991 ad|| |||| 10||| engod | ||
| 020 | |a 087849619X |9 0-87849-619-X | ||
| 035 | |a (OCoLC)23101571 | ||
| 035 | |a (DE-599)BVBBV004658175 | ||
| 040 | |a DE-604 |b ger |e rakddb | ||
| 041 | 0 | |a eng | |
| 049 | |a DE-91G |a DE-703 |a DE-83 |a DE-188 | ||
| 050 | 0 | |a TA401 | |
| 082 | 0 | |a 620.112 |b M4255, v.65/66 | |
| 084 | |a UP 3250 |0 (DE-625)146380: |2 rvk | ||
| 084 | |a UQ 8100 |0 (DE-625)146588: |2 rvk | ||
| 084 | |a PHY 696f |2 stub | ||
| 245 | 1 | 0 | |a Shallow impurities in semiconductors |b proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990 |c ed. Gordon Davies |
| 264 | 1 | |a Zürich [u.a.] |b Trans Tech Publ. |c 1991 | |
| 300 | |a 476 S. |b Ill., graph. Darst. | ||
| 336 | |b txt |2 rdacontent | ||
| 337 | |b n |2 rdamedia | ||
| 338 | |b nc |2 rdacarrier | ||
| 490 | 1 | |a Materials science forum |v 65/66 | |
| 500 | |a Literaturangaben | ||
| 650 | 4 | |a Semiconductors |x Defects |v Congresses | |
| 650 | 4 | |a Semiconductors |x Impurity distribution |v Congresses | |
| 650 | 0 | 7 | |a Halbleiter |0 (DE-588)4022993-2 |2 gnd |9 rswk-swf |
| 650 | 0 | 7 | |a Verunreinigung |0 (DE-588)4188107-2 |2 gnd |9 rswk-swf |
| 655 | 7 | |0 (DE-588)1071861417 |a Konferenzschrift |y 1990 |z London |2 gnd-content | |
| 689 | 0 | 0 | |a Halbleiter |0 (DE-588)4022993-2 |D s |
| 689 | 0 | 1 | |a Verunreinigung |0 (DE-588)4188107-2 |D s |
| 689 | 0 | |5 DE-604 | |
| 700 | 1 | |a Davies, Gordon |d 1945- |0 (DE-588)1028302789 |4 edt | |
| 711 | 2 | |a International Conference on Shallow Impurities in Semiconductors |n 4 |d 1990 |c London |j Sonstige |0 (DE-588)5050647-X |4 oth | |
| 830 | 0 | |a Materials science forum |v 65/66 |w (DE-604)BV001902147 |9 65/66 | |
| 856 | 4 | 2 | |m Digitalisierung TU Muenchen |q application/pdf |u http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002861511&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |3 Inhaltsverzeichnis |
| 999 | |a oai:aleph.bib-bvb.de:BVB01-002861511 | ||
Datensatz im Suchindex
| _version_ | 1804118777035489280 |
|---|---|
| adam_text | TABLE
OF
CONTENTS
I. TECHNIQUES
J
Wagner
1
Raman spectroscopy of dopant impurities in ho¬
mogeneously and planar
(¿
doped) III-V semicon¬
ductors
T
lino
11
Determination of residual donor concentration by
selective pair luminescence in semi-insulating Ga-
As
TD Harris, JK Trautman and JI
Coloneii
21
The dynamics of selectively excited donor acceptor
pairs, in GaAs
Shi Wanquan,
Hou Qingrun,
Liu Shixiang, Liu
29
Xuejun,
Fu Zhengqing,
He Zhijing and
Lu Liwu
A new technology of boron diffusion into silicon
by rapid thermal processing
Lu Zhiheng,
Li Sujie and Luo Yan
35
Control of shallow boron profile in silicon
AF Polupanov, VI Galiev and
VE Zhuravlev
41
Photo-ionisation cross-section spectra of shallow
acceptors in semiconductors
:
effect of a change in
heavy- to light-hole mass ratio
AB
Gerasimov
47
Electron-hole mechanism of migration and defect
interaction
II.
¿
DOPING
EF Schubert and RF
Kopf 53
¿-doping in III-V semiconductors
AA Bernussi,
JA Brum, P Motisuke, P
Bas-
67
maji,
M Siu
Li and
O Hipólito
Optical
interband
transitions in single and period¬
ically ¿-doped GaAs samples
JCM
Henning,
YARR Kessener, PM Koenraad,
73
MR Leys, APJ Voncken,
W
van
der Vleuten
and JH
Wolter
Photoluminescence and excitation study of
¿
doped
GaAs
1С
da
Cunha
Lima and AF
da Silva 79
Shallow impurity bands in ¿-doped quantum wells
E
Skuras,
RL Williams, RA Stradling, EA John-
83
son, A Mackinnon, I Ferguson and A d Oliv-
еіга
Quantum transport
studies of atomic plane (spike)
doping in InSb and InAs
III. QUANTUM WELLS
KK
Bajaj
and DC Reynolds
91
Bound
excitons
in quantum wells
J-P Cheng, WJ Li and BD McCombe
99
Excited shallow impurity states in quantum well
structures
:
Correspondences between the low-
field and high-field limits
REM de
Веккег,
MB Stanaway,
Ρ
Wyder,
JM
105
Chamberlain,
RT
Grimes,
M Henini, OH Hugh¬
es and G
Hill
Time resolved far infra-red magnetospectroscopy
in GaAs/AlGaAs MQWs
IN Uraltsev,
VP
Kochereshko, VS Vikhnin and
111
DR Yakovlev
Polarised
luminescence
study of shallow acceptors
in short-period superlattices
JL Dunn,
E
Pearl, RT Grimes, MB Stanaway
117
and JM Chamberlain
Excited-state spectroscopy of shallow donor impu¬
rities in GaAs/AlGaAs multi-quantum wells
SP Najda,
S Huant,
and
В
Etienne
123
Two-dimensional D~ states in selectively doped
GaAs-GaAlAs multi-quantum wells
PD Emmel and
1С
da
Cunha
Lima
129
Infrared absorption coefficient for shallow donors
in a quantum well
G
Weber and
LE
Oliveira
135
Optical absorption spectra associated to shallow
impurities in GaAs-(Ga,Al)As quantum well wires
IV. HYDROGEN IN SEMICONDUCTORS
M
Stavola
and
SJ
Pearton
141
Microscopic properties of hydrogen
passi
vated sha¬
llow impurities in semiconductors
RE Peale,
К
Muro
and
AJ
Sievers 151
Sulphur-hydrogen donor complexes in silicon
J
Härtung, J Weber and
L Genzel
157
Photothermal ionization
of effective mass-like hyd¬
rogen-related donors in silicon
VJB Torres,
G Davies
and AM Stoneham
163
Valence force
models as a test of atomic models
Ρ
Briddon and R Jones
169
Hydrogen-impurity complexes in GaAs
R
Addinall, RC Newman,
W
Götz,
G
Roos,
G
175
Pensi and DA
Hope
An investigation of the
78/203
meV double accep¬
tor in GaAs including the effects of hydrogen pas¬
sivation
L Svob
and
Y Marfaing
181
Diffusion of deuterium in ZnHgTe and CdHgTe
ternary alloys as a function of alloy composition
V. BOUND
EXCITONS
MLW Thewalt and DM Brake
187
Ultra-high resolution
photoluminescence
studies of
bound
excitons
and multi-bound exciton complexes
in silicon
AT Collins, SC Lawson,
G
Davies and
H
Kanda
199
Host-lattice isotope dependence of acceptor bound
exciton luminescence in diamond
VA Karasyuk,
EC Lightowlers, MLW Thewalt,
205
AG Steele
and DM Brake
Fine structure of bound exciton luminescence in
uniaxially stressed Si:B
VA
Karasyuk and EC Lightowlers
211
New features in the
photoluminescence
spectra of
bound multiexciton complexes in uniaxially
stressed boron doped silicon
AG
Steele and EC Lightowlers
217
Photoluminescence
excitation spectroscopy of don¬
ors in Ge
II Parfenova and
MV
Lupal
223
Lattice distortions and exciton bound to nitrogen
in GaP-rich A3B5 alloys
D
Ouadjaout,
Y
Marfaing, A Lusson,
R Tri-
229
boulet
and JF Rommeluere
Binding of
excitons
around Hg atoms in
ZriiHgł-rTe
and CdzHgj-^Te alloys
T
Taguchi and
C Onodera
235
Shallow acceptor bound-excitons in CdTe epitaxial
layers on
(100)
GaAs
VI. IMPURITIES IN
SILICON
M
Stöhr,
Ρ
Janiszewski and JA Chroboczek 241
Magneto-transport in stressed Si:B in the localisa¬
tion regime
N
Meilwes, JR
Niklas
and J-M Spaeth 247
Aluminium related thermally induced defects in
silicon
BG
Svensson
and MO Aboelfotoh
253
Shallow copper-related complexes in p-type silicon
IL
Beinikhes, ShM Kogan, MG Novak and AF
259
Polupanov
The electron structure and spectra of shallow non-
hydrogenlike impurities in semiconductors
:
II ac¬
ceptors in silicon
M
Heggie,
R
Jones and A Umerski
265
Interaction of phosphorus with dislocation cores in
Si
YaE Pokrovskii and OI Smirnova
271
Relaxation of extrinsic excitation in Si doped with
group-Ill and -V impurities
U
Reislöhner
and
W
Witthuhn 281
Iron- and chromium-indium pairs in silicon
R
Jones,
S
Oberg
and A Umerski
287
Ab
initio calculations on interstitial
О
clusters in
Si
KK Larsen and AN Larsen
293
Diffusion of group-IV and -V impurities in silicon
at high donor concentrations
:
a comparison be¬
tween experimental and theoretical results
ZG Gogua
299
Energy states of shallow and deep impurities and
processes of optical transitions, scattering and cur¬
rent carrier capture in Ge and Si
W
Puff
and
S
Dannefaer 307
On the interplay between vacancies and interstitial
clusters in Czochralski grown silicon
VII.
IMPURITIES IN Ge AND Ge^i:^
G
Piao, RA Lewis and
P
Fisher
313
The
рз/2
Fano
and piezo-Fano spectra of singly
ionised zinc impurity in germanium
GJ
Takács,
P
Fisher and CA Freeth
323
Spectroscopy of transitions to Coulomb-related
Landau states in germanium
EG Chirkova and YuP Druzhinin
329
Spectral dependence of the shallow impurity opti¬
cal absorption cross-section in germanium
VG Golubev, GI Kropotov,
SA Proshin
and
VP
333
Vasiliev
Resonance states of a shallow acceptor in a degen¬
erate anisotropic band semiconductor
Ρ
Clauws and
J Vennik
339
Bistability of thermal donors in germanium inves¬
tigated by far-IR spectroscopy
YuB Vasilyev and YuL
Ivanov
345
Shallow impurity spectroscopy using cyclotron res¬
onance lasers
V Higgs,
G
Davies and
R Kubiak
351
The influence of metallic contamination on the lat¬
tice relaxation of GerSii_r epitaxial alloys
PE Dyshlovenko, AA Kopylov, KL Lutovich,
357
VA
Vasiljev and AA Shakmaev
Impurity photoconductivity in GexSij-z epitaxial
layers doped with phosphorus
VIII.
IMPURITIES IN COMPOUND SEMI¬
CONDUCTORS
J
Burghoorn,
A v Klarenbosch,
TO Klaassen,
363
WTh Wenckebach and CT Foxon
A FIR photo-Hall study of the ls-2p_! shallow
donor transition in n-GaAs
LMR Scolfaro,
EA Menezes, CAC Mendonça,
369
JR
Leite
and JMV Martins
Electronic structure of Be-doped GaAs
PD Wang, SN Holmes and RA Stradling
375
High resolution magneto-optical studies of the don¬
ors in MOCVD InP
PD Wang, SN Holmes, RA Stradling,
R
Droop-
381
ad, I Ferguson, A d Oliveira, SD Parker and RL
Williams
Far-infrared magneto-optical studies of free and
bound carriers in high purity MBE InAs
M Boukerche, S
Sivananthan, PS Wijewarna-
389
ѕш
-iya,
SS
Yoo,
M
DeSouza, IK Sou,
M
Lange
and JP Faurie
The shallow doping properties of mercury cad¬
mium telluride grown by Molecular Beam Epitaxy
W
Wilkening and
U
Kaufmann 397
Electron paramagnetic resonance of the shallow Si
donor in indirect
GaAs/AlrGa^!
As
hetero-structures
Τ
Wada,
A Takeda,
Τ
Kondo,
M
Takeda and
M
403
Ichimura
Electron beam doping of Zn into
G a
As in an array
of GaAs/Zn/GaAs
A Kadri,
JC Portal,
E
Ranz,
К
Zitouni,
N
Saidi,
409
В
Gil,
D
Lavielle
and R Sirvin
Pressure and light induced metastability effects
near the magnetic field induced metal insulator
transition in n-GaAs
С
Carlone, SM Khanna, NL Rowell and JW
415
Gerdes Jr
Characterisation of fast neutron irradiated GaAs
films by
photoluminescence spectroscopy
M
Ichimura,
T
Wada,
A Ito
and Akira
Usami
421
Thermodynamic study of annealing process of Si-
implanted GaAs
S
Bednarek
and
J
Adamowski
**
Theoretical description of donor bistability in
CdF2
IX. DX CENTRES
L
Dobaczewski and JM
Langer 433
DX-like centres in semiconductors
:
metastability,
bistability and negative-U
M
Fockele, J-M Spaeth and
P
Gibart 443
Magneto-optical investigations of DX-centres in
AlxGai-j-As
JE
Dmochowski,
Z
Wasilewski and RA
Strad-
449
ling
Localised electronic states with Aj symmetry of
substitutional impurities
-
are they DX centres?
M
Zazoui, SL Feng, HJ
von Bardeleben
and JC
455
Bourgoin
Photo-ionisation and metastability of the DX cen¬
tre in GaAlAs alloys
PM Koenraad,
W
de Lange,
FAP
Blom,
MR 461
Leys, JAAJ
Perenboom,
J
Singleton,
WC
van
der Vleuten
and JH
Wolter
DX centres in Si
6
doped GaAs and AljGaj.^As?
E
Ranz,
К
Zitouni,
A Kadri,
D
Lavielle, JC
467
Portal,
R
Sirvin and
N
Chand
Tunable apparition of the DX-linked level by pho-
toexcitation in AlGaAs in magnetic freeze-out ex¬
periments under hydrostatic pressure
S
Chakravarty,
S Subramanian and BM Arora
471
Shallow states of DX
centres
in AlGaAs:Sn probed
by admittance
spectroscopy
Author
Index
477
|
| any_adam_object | 1 |
| author2 | Davies, Gordon 1945- |
| author2_role | edt |
| author2_variant | g d gd |
| author_GND | (DE-588)1028302789 |
| author_facet | Davies, Gordon 1945- |
| building | Verbundindex |
| bvnumber | BV004658175 |
| callnumber-first | T - Technology |
| callnumber-label | TA401 |
| callnumber-raw | TA401 |
| callnumber-search | TA401 |
| callnumber-sort | TA 3401 |
| callnumber-subject | TA - General and Civil Engineering |
| classification_rvk | UP 3250 UQ 8100 |
| classification_tum | PHY 696f |
| ctrlnum | (OCoLC)23101571 (DE-599)BVBBV004658175 |
| dewey-full | 620.112 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 620 - Engineering and allied operations |
| dewey-raw | 620.112 |
| dewey-search | 620.112 |
| dewey-sort | 3620.112 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Physik |
| format | Conference Proceeding Book |
| fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>02074nam a2200469 cb4500</leader><controlfield tag="001">BV004658175</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20221128 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">911217s1991 ad|| |||| 10||| engod</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">087849619X</subfield><subfield code="9">0-87849-619-X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)23101571</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV004658175</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakddb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-91G</subfield><subfield code="a">DE-703</subfield><subfield code="a">DE-83</subfield><subfield code="a">DE-188</subfield></datafield><datafield tag="050" ind1=" " ind2="0"><subfield code="a">TA401</subfield></datafield><datafield tag="082" ind1="0" ind2=" "><subfield code="a">620.112</subfield><subfield code="b">M4255, v.65/66</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UP 3250</subfield><subfield code="0">(DE-625)146380:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">UQ 8100</subfield><subfield code="0">(DE-625)146588:</subfield><subfield code="2">rvk</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">PHY 696f</subfield><subfield code="2">stub</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Shallow impurities in semiconductors</subfield><subfield code="b">proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990</subfield><subfield code="c">ed. Gordon Davies</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Zürich [u.a.]</subfield><subfield code="b">Trans Tech Publ.</subfield><subfield code="c">1991</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">476 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">Materials science forum</subfield><subfield code="v">65/66</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">Literaturangaben</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Defects</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Semiconductors</subfield><subfield code="x">Impurity distribution</subfield><subfield code="v">Congresses</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">Verunreinigung</subfield><subfield code="0">(DE-588)4188107-2</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="655" ind1=" " ind2="7"><subfield code="0">(DE-588)1071861417</subfield><subfield code="a">Konferenzschrift</subfield><subfield code="y">1990</subfield><subfield code="z">London</subfield><subfield code="2">gnd-content</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">Halbleiter</subfield><subfield code="0">(DE-588)4022993-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2="1"><subfield code="a">Verunreinigung</subfield><subfield code="0">(DE-588)4188107-2</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="5">DE-604</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Davies, Gordon</subfield><subfield code="d">1945-</subfield><subfield code="0">(DE-588)1028302789</subfield><subfield code="4">edt</subfield></datafield><datafield tag="711" ind1="2" ind2=" "><subfield code="a">International Conference on Shallow Impurities in Semiconductors</subfield><subfield code="n">4</subfield><subfield code="d">1990</subfield><subfield code="c">London</subfield><subfield code="j">Sonstige</subfield><subfield code="0">(DE-588)5050647-X</subfield><subfield code="4">oth</subfield></datafield><datafield tag="830" ind1=" " ind2="0"><subfield code="a">Materials science forum</subfield><subfield code="v">65/66</subfield><subfield code="w">(DE-604)BV001902147</subfield><subfield code="9">65/66</subfield></datafield><datafield tag="856" ind1="4" ind2="2"><subfield code="m">Digitalisierung TU Muenchen</subfield><subfield code="q">application/pdf</subfield><subfield code="u">http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002861511&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA</subfield><subfield code="3">Inhaltsverzeichnis</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-002861511</subfield></datafield></record></collection> |
| genre | (DE-588)1071861417 Konferenzschrift 1990 London gnd-content |
| genre_facet | Konferenzschrift 1990 London |
| id | DE-604.BV004658175 |
| illustrated | Illustrated |
| indexdate | 2024-07-09T16:15:41Z |
| institution | BVB |
| institution_GND | (DE-588)5050647-X |
| isbn | 087849619X |
| language | English |
| oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-002861511 |
| oclc_num | 23101571 |
| open_access_boolean | |
| owner | DE-91G DE-BY-TUM DE-703 DE-83 DE-188 |
| owner_facet | DE-91G DE-BY-TUM DE-703 DE-83 DE-188 |
| physical | 476 S. Ill., graph. Darst. |
| publishDate | 1991 |
| publishDateSearch | 1991 |
| publishDateSort | 1991 |
| publisher | Trans Tech Publ. |
| record_format | marc |
| series | Materials science forum |
| series2 | Materials science forum |
| spelling | Shallow impurities in semiconductors proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990 ed. Gordon Davies Zürich [u.a.] Trans Tech Publ. 1991 476 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier Materials science forum 65/66 Literaturangaben Semiconductors Defects Congresses Semiconductors Impurity distribution Congresses Halbleiter (DE-588)4022993-2 gnd rswk-swf Verunreinigung (DE-588)4188107-2 gnd rswk-swf (DE-588)1071861417 Konferenzschrift 1990 London gnd-content Halbleiter (DE-588)4022993-2 s Verunreinigung (DE-588)4188107-2 s DE-604 Davies, Gordon 1945- (DE-588)1028302789 edt International Conference on Shallow Impurities in Semiconductors 4 1990 London Sonstige (DE-588)5050647-X oth Materials science forum 65/66 (DE-604)BV001902147 65/66 Digitalisierung TU Muenchen application/pdf http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002861511&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA Inhaltsverzeichnis |
| spellingShingle | Shallow impurities in semiconductors proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990 Materials science forum Semiconductors Defects Congresses Semiconductors Impurity distribution Congresses Halbleiter (DE-588)4022993-2 gnd Verunreinigung (DE-588)4188107-2 gnd |
| subject_GND | (DE-588)4022993-2 (DE-588)4188107-2 (DE-588)1071861417 |
| title | Shallow impurities in semiconductors proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990 |
| title_auth | Shallow impurities in semiconductors proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990 |
| title_exact_search | Shallow impurities in semiconductors proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990 |
| title_full | Shallow impurities in semiconductors proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990 ed. Gordon Davies |
| title_fullStr | Shallow impurities in semiconductors proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990 ed. Gordon Davies |
| title_full_unstemmed | Shallow impurities in semiconductors proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990 ed. Gordon Davies |
| title_short | Shallow impurities in semiconductors |
| title_sort | shallow impurities in semiconductors proceedings of the fourth international conference on shallow impurities in semiconductors king s college london 31 july to 2 august 1990 |
| title_sub | proceedings of the Fourth International Conference on Shallow Impurities in Semiconductors, King's College London, 31 July to 2 August 1990 |
| topic | Semiconductors Defects Congresses Semiconductors Impurity distribution Congresses Halbleiter (DE-588)4022993-2 gnd Verunreinigung (DE-588)4188107-2 gnd |
| topic_facet | Semiconductors Defects Congresses Semiconductors Impurity distribution Congresses Halbleiter Verunreinigung Konferenzschrift 1990 London |
| url | http://bvbr.bib-bvb.de:8991/F?func=service&doc_library=BVB01&local_base=BVB01&doc_number=002861511&sequence=000002&line_number=0001&func_code=DB_RECORDS&service_type=MEDIA |
| volume_link | (DE-604)BV001902147 |
| work_keys_str_mv | AT daviesgordon shallowimpuritiesinsemiconductorsproceedingsofthefourthinternationalconferenceonshallowimpuritiesinsemiconductorskingscollegelondon31julyto2august1990 AT internationalconferenceonshallowimpuritiesinsemiconductorslondon shallowimpuritiesinsemiconductorsproceedingsofthefourthinternationalconferenceonshallowimpuritiesinsemiconductorskingscollegelondon31julyto2august1990 |