Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC:
Gespeichert in:
| Hauptverfasser: | , , , , , |
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| Format: | Elektronisch E-Book |
| Sprache: | English |
| Veröffentlicht: |
Erlangen ; Nürnberg
Friedrich-Alexander-Universität Erlangen-Nürnberg
2019
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| Schlagworte: | |
| Online-Zugang: | Volltext Volltext |
| Beschreibung: | 1 Online-Ressource |
Internformat
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| 700 | 1 | |a Roder, Melissa |e Verfasser |0 (DE-588)1193292344 |4 aut | |
| 700 | 1 | |a Nguyen, Binh Duong |e Verfasser |4 aut | |
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Datensatz im Suchindex
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| author | Steiner, Johannes Roder, Melissa Nguyen, Binh Duong Sandfeld, Stefan Danilewsky, Andreas N. Wellmann, Peter 1966- |
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| illustrated | Not Illustrated |
| index_date | 2024-07-03T14:20:16Z |
| indexdate | 2024-07-10T08:50:43Z |
| institution | BVB |
| language | English |
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| spelling | Steiner, Johannes Verfasser aut Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC Johannes Steiner, Melissa Roder, Binh Duong Nguyen, Stefan Sandfeld, Andreas Danilewsky, Peter J. Wellmann Erlangen ; Nürnberg Friedrich-Alexander-Universität Erlangen-Nürnberg 2019 1 Online-Ressource txt rdacontent c rdamedia cr rdacarrier silicon carbide physical vapor transport basal plane dislocation small angle grain boundary thermal stress Roder, Melissa Verfasser (DE-588)1193292344 aut Nguyen, Binh Duong Verfasser aut Sandfeld, Stefan Verfasser (DE-588)1192798570 aut Danilewsky, Andreas N. Verfasser (DE-588)1124843558 aut Wellmann, Peter 1966- Verfasser (DE-588)123020069 aut Sonderdruck aus Materials Vol. 12 (2019) 10.3390/ma12132207 https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-118553 Resolving-System kostenfrei Volltext https://open.fau.de/handle/openfau/11855 Verlag kostenfrei Volltext |
| spellingShingle | Steiner, Johannes Roder, Melissa Nguyen, Binh Duong Sandfeld, Stefan Danilewsky, Andreas N. Wellmann, Peter 1966- Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC |
| title | Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC |
| title_auth | Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC |
| title_exact_search | Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC |
| title_exact_search_txtP | Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC |
| title_full | Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC Johannes Steiner, Melissa Roder, Binh Duong Nguyen, Stefan Sandfeld, Andreas Danilewsky, Peter J. Wellmann |
| title_fullStr | Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC Johannes Steiner, Melissa Roder, Binh Duong Nguyen, Stefan Sandfeld, Andreas Danilewsky, Peter J. Wellmann |
| title_full_unstemmed | Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC Johannes Steiner, Melissa Roder, Binh Duong Nguyen, Stefan Sandfeld, Andreas Danilewsky, Peter J. Wellmann |
| title_short | Analysis of the basal plane dislocation density and thermomechanical stress during 100 mm PVT growth of 4H-SiC |
| title_sort | analysis of the basal plane dislocation density and thermomechanical stress during 100 mm pvt growth of 4h sic |
| url | https://nbn-resolving.org/urn:nbn:de:bvb:29-opus4-118553 https://open.fau.de/handle/openfau/11855 |
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