MOSFET modeling & BSIM3 user's guide:
Gespeichert in:
1. Verfasser: | |
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Format: | Elektronisch E-Book |
Sprache: | English |
Veröffentlicht: |
Boston
Kluwer Academic Publishers
c1999
|
Schlagworte: | |
Beschreibung: | xv, 461 p. |
ISBN: | 0792385756 |
Internformat
MARC
LEADER | 00000nmm a2200000zc 4500 | ||
---|---|---|---|
001 | BV044830868 | ||
003 | DE-604 | ||
005 | 20180305 | ||
007 | cr|uuu---uuuuu | ||
008 | 180305s1999 |||| o||u| ||||||eng d | ||
020 | |a 0792385756 |c alk. paper |9 0-7923-8575-6 | ||
035 | |a (ZDB-38-ESG)ebr10052609 | ||
035 | |a (OCoLC)70759261 | ||
035 | |a (DE-599)BVBBV044830868 | ||
040 | |a DE-604 |b ger |e aacr | ||
041 | 0 | |a eng | |
082 | 0 | |a 621.3815/284 |2 21 | |
100 | 1 | |a Cheng, Yuhua |d 1958- |e Verfasser |4 aut | |
245 | 1 | 0 | |a MOSFET modeling & BSIM3 user's guide |c by Yuhua Cheng and Chenming Hu |
246 | 1 | 3 | |a MOSFET modeling and BSIM3 user's guide |
264 | 1 | |a Boston |b Kluwer Academic Publishers |c c1999 | |
300 | |a xv, 461 p. | ||
336 | |b txt |2 rdacontent | ||
337 | |b c |2 rdamedia | ||
338 | |b cr |2 rdacarrier | ||
505 | 8 | |a Includes bibliographical references | |
650 | 4 | |a Metal oxide semiconductor field-effect transistors |x Computer simulation | |
650 | 4 | |a Electronic circuit design |x Data processing | |
650 | 0 | 7 | |a Schaltungsentwurf |0 (DE-588)4179389-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a MOS |0 (DE-588)4130209-6 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |2 gnd |9 rswk-swf |
650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
689 | 0 | |8 1\p |5 DE-604 | |
689 | 1 | 0 | |a Schaltungsentwurf |0 (DE-588)4179389-4 |D s |
689 | 1 | |5 DE-604 | |
689 | 2 | 0 | |a Feldeffekttransistor |0 (DE-588)4131472-4 |D s |
689 | 2 | |5 DE-604 | |
689 | 3 | 0 | |a MOS |0 (DE-588)4130209-6 |D s |
689 | 3 | |5 DE-604 | |
700 | 1 | |a Hu, Chenming |e Sonstige |4 oth | |
912 | |a ZDB-38-ESG | ||
999 | |a oai:aleph.bib-bvb.de:BVB01-030225733 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804178331863613440 |
---|---|
any_adam_object | |
author | Cheng, Yuhua 1958- |
author_facet | Cheng, Yuhua 1958- |
author_role | aut |
author_sort | Cheng, Yuhua 1958- |
author_variant | y c yc |
building | Verbundindex |
bvnumber | BV044830868 |
collection | ZDB-38-ESG |
contents | Includes bibliographical references |
ctrlnum | (ZDB-38-ESG)ebr10052609 (OCoLC)70759261 (DE-599)BVBBV044830868 |
dewey-full | 621.3815/284 |
dewey-hundreds | 600 - Technology (Applied sciences) |
dewey-ones | 621 - Applied physics |
dewey-raw | 621.3815/284 |
dewey-search | 621.3815/284 |
dewey-sort | 3621.3815 3284 |
dewey-tens | 620 - Engineering and allied operations |
discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
format | Electronic eBook |
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id | DE-604.BV044830868 |
illustrated | Not Illustrated |
indexdate | 2024-07-10T08:02:17Z |
institution | BVB |
isbn | 0792385756 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-030225733 |
oclc_num | 70759261 |
open_access_boolean | |
physical | xv, 461 p. |
psigel | ZDB-38-ESG |
publishDate | 1999 |
publishDateSearch | 1999 |
publishDateSort | 1999 |
publisher | Kluwer Academic Publishers |
record_format | marc |
spelling | Cheng, Yuhua 1958- Verfasser aut MOSFET modeling & BSIM3 user's guide by Yuhua Cheng and Chenming Hu MOSFET modeling and BSIM3 user's guide Boston Kluwer Academic Publishers c1999 xv, 461 p. txt rdacontent c rdamedia cr rdacarrier Includes bibliographical references Metal oxide semiconductor field-effect transistors Computer simulation Electronic circuit design Data processing Schaltungsentwurf (DE-588)4179389-4 gnd rswk-swf MOS (DE-588)4130209-6 gnd rswk-swf Feldeffekttransistor (DE-588)4131472-4 gnd rswk-swf MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 s 1\p DE-604 Schaltungsentwurf (DE-588)4179389-4 s DE-604 Feldeffekttransistor (DE-588)4131472-4 s MOS (DE-588)4130209-6 s Hu, Chenming Sonstige oth 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Cheng, Yuhua 1958- MOSFET modeling & BSIM3 user's guide Includes bibliographical references Metal oxide semiconductor field-effect transistors Computer simulation Electronic circuit design Data processing Schaltungsentwurf (DE-588)4179389-4 gnd MOS (DE-588)4130209-6 gnd Feldeffekttransistor (DE-588)4131472-4 gnd MOS-FET (DE-588)4207266-9 gnd |
subject_GND | (DE-588)4179389-4 (DE-588)4130209-6 (DE-588)4131472-4 (DE-588)4207266-9 |
title | MOSFET modeling & BSIM3 user's guide |
title_alt | MOSFET modeling and BSIM3 user's guide |
title_auth | MOSFET modeling & BSIM3 user's guide |
title_exact_search | MOSFET modeling & BSIM3 user's guide |
title_full | MOSFET modeling & BSIM3 user's guide by Yuhua Cheng and Chenming Hu |
title_fullStr | MOSFET modeling & BSIM3 user's guide by Yuhua Cheng and Chenming Hu |
title_full_unstemmed | MOSFET modeling & BSIM3 user's guide by Yuhua Cheng and Chenming Hu |
title_short | MOSFET modeling & BSIM3 user's guide |
title_sort | mosfet modeling bsim3 user s guide |
topic | Metal oxide semiconductor field-effect transistors Computer simulation Electronic circuit design Data processing Schaltungsentwurf (DE-588)4179389-4 gnd MOS (DE-588)4130209-6 gnd Feldeffekttransistor (DE-588)4131472-4 gnd MOS-FET (DE-588)4207266-9 gnd |
topic_facet | Metal oxide semiconductor field-effect transistors Computer simulation Electronic circuit design Data processing Schaltungsentwurf MOS Feldeffekttransistor MOS-FET |
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