FinFET modeling for IC simulation and design: using the BSIM-CMG standard
Gespeichert in:
1. Verfasser: | |
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Format: | Buch |
Sprache: | English |
Veröffentlicht: |
Amsterdam [u.a.]
Elsevier, Academic Press
2015
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Schlagworte: | |
Beschreibung: | XII, 292 S. Ill., graph. Darst. |
ISBN: | 9780124200319 |
Internformat
MARC
LEADER | 00000nam a2200000 c 4500 | ||
---|---|---|---|
001 | BV043196500 | ||
003 | DE-604 | ||
005 | 20160119 | ||
007 | t | ||
008 | 151209s2015 ad|| |||| 00||| eng d | ||
020 | |a 9780124200319 |c hbk |9 978-0-12-420031-9 | ||
035 | |a (OCoLC)950881593 | ||
035 | |a (DE-599)BVBBV043196500 | ||
040 | |a DE-604 |b ger |e rakwb | ||
041 | 0 | |a eng | |
049 | |a DE-29T | ||
100 | 1 | |a Chauhan, Yogesh Singh |e Verfasser |4 aut | |
245 | 1 | 0 | |a FinFET modeling for IC simulation and design |b using the BSIM-CMG standard |c Yogesh Chauhan [and seven others] |
264 | 1 | |a Amsterdam [u.a.] |b Elsevier, Academic Press |c 2015 | |
300 | |a XII, 292 S. |b Ill., graph. Darst. | ||
336 | |b txt |2 rdacontent | ||
337 | |b n |2 rdamedia | ||
338 | |b nc |2 rdacarrier | ||
650 | 0 | 7 | |a MOS-FET |0 (DE-588)4207266-9 |2 gnd |9 rswk-swf |
689 | 0 | 0 | |a MOS-FET |0 (DE-588)4207266-9 |D s |
689 | 0 | |8 1\p |5 DE-604 | |
999 | |a oai:aleph.bib-bvb.de:BVB01-028619989 | ||
883 | 1 | |8 1\p |a cgwrk |d 20201028 |q DE-101 |u https://d-nb.info/provenance/plan#cgwrk |
Datensatz im Suchindex
_version_ | 1804175688292368384 |
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any_adam_object | |
author | Chauhan, Yogesh Singh |
author_facet | Chauhan, Yogesh Singh |
author_role | aut |
author_sort | Chauhan, Yogesh Singh |
author_variant | y s c ys ysc |
building | Verbundindex |
bvnumber | BV043196500 |
ctrlnum | (OCoLC)950881593 (DE-599)BVBBV043196500 |
format | Book |
fullrecord | <?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01024nam a2200301 c 4500</leader><controlfield tag="001">BV043196500</controlfield><controlfield tag="003">DE-604</controlfield><controlfield tag="005">20160119 </controlfield><controlfield tag="007">t</controlfield><controlfield tag="008">151209s2015 ad|| |||| 00||| eng d</controlfield><datafield tag="020" ind1=" " ind2=" "><subfield code="a">9780124200319</subfield><subfield code="c">hbk</subfield><subfield code="9">978-0-12-420031-9</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(OCoLC)950881593</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-599)BVBBV043196500</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-604</subfield><subfield code="b">ger</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1="0" ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="049" ind1=" " ind2=" "><subfield code="a">DE-29T</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Chauhan, Yogesh Singh</subfield><subfield code="e">Verfasser</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">FinFET modeling for IC simulation and design</subfield><subfield code="b">using the BSIM-CMG standard</subfield><subfield code="c">Yogesh Chauhan [and seven others]</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Amsterdam [u.a.]</subfield><subfield code="b">Elsevier, Academic Press</subfield><subfield code="c">2015</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">XII, 292 S.</subfield><subfield code="b">Ill., graph. Darst.</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="b">n</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="b">nc</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="650" ind1="0" ind2="7"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="2">gnd</subfield><subfield code="9">rswk-swf</subfield></datafield><datafield tag="689" ind1="0" ind2="0"><subfield code="a">MOS-FET</subfield><subfield code="0">(DE-588)4207266-9</subfield><subfield code="D">s</subfield></datafield><datafield tag="689" ind1="0" ind2=" "><subfield code="8">1\p</subfield><subfield code="5">DE-604</subfield></datafield><datafield tag="999" ind1=" " ind2=" "><subfield code="a">oai:aleph.bib-bvb.de:BVB01-028619989</subfield></datafield><datafield tag="883" ind1="1" ind2=" "><subfield code="8">1\p</subfield><subfield code="a">cgwrk</subfield><subfield code="d">20201028</subfield><subfield code="q">DE-101</subfield><subfield code="u">https://d-nb.info/provenance/plan#cgwrk</subfield></datafield></record></collection> |
id | DE-604.BV043196500 |
illustrated | Illustrated |
indexdate | 2024-07-10T07:20:16Z |
institution | BVB |
isbn | 9780124200319 |
language | English |
oai_aleph_id | oai:aleph.bib-bvb.de:BVB01-028619989 |
oclc_num | 950881593 |
open_access_boolean | |
owner | DE-29T |
owner_facet | DE-29T |
physical | XII, 292 S. Ill., graph. Darst. |
publishDate | 2015 |
publishDateSearch | 2015 |
publishDateSort | 2015 |
publisher | Elsevier, Academic Press |
record_format | marc |
spelling | Chauhan, Yogesh Singh Verfasser aut FinFET modeling for IC simulation and design using the BSIM-CMG standard Yogesh Chauhan [and seven others] Amsterdam [u.a.] Elsevier, Academic Press 2015 XII, 292 S. Ill., graph. Darst. txt rdacontent n rdamedia nc rdacarrier MOS-FET (DE-588)4207266-9 gnd rswk-swf MOS-FET (DE-588)4207266-9 s 1\p DE-604 1\p cgwrk 20201028 DE-101 https://d-nb.info/provenance/plan#cgwrk |
spellingShingle | Chauhan, Yogesh Singh FinFET modeling for IC simulation and design using the BSIM-CMG standard MOS-FET (DE-588)4207266-9 gnd |
subject_GND | (DE-588)4207266-9 |
title | FinFET modeling for IC simulation and design using the BSIM-CMG standard |
title_auth | FinFET modeling for IC simulation and design using the BSIM-CMG standard |
title_exact_search | FinFET modeling for IC simulation and design using the BSIM-CMG standard |
title_full | FinFET modeling for IC simulation and design using the BSIM-CMG standard Yogesh Chauhan [and seven others] |
title_fullStr | FinFET modeling for IC simulation and design using the BSIM-CMG standard Yogesh Chauhan [and seven others] |
title_full_unstemmed | FinFET modeling for IC simulation and design using the BSIM-CMG standard Yogesh Chauhan [and seven others] |
title_short | FinFET modeling for IC simulation and design |
title_sort | finfet modeling for ic simulation and design using the bsim cmg standard |
title_sub | using the BSIM-CMG standard |
topic | MOS-FET (DE-588)4207266-9 gnd |
topic_facet | MOS-FET |
work_keys_str_mv | AT chauhanyogeshsingh finfetmodelingforicsimulationanddesignusingthebsimcmgstandard |