Ultra-low input power conversion circuits based on tunnel FETs /:
The increasing demand in electronic portability imposes low power consumption as a key metric to analog and digital circuit design. Tunnel FET (TFET) devices have been explored mostly in digital circuits, showing promising results for ultra-low power and energy efficient circuit applications. The TF...
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| Main Author: | |
|---|---|
| Other Authors: | , |
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Gistrup, Denmark :
River Publishers,
[2018]
|
| Series: | River Publishers series in circuits and systems.
|
| Subjects: | |
| Online Access: | DE-862 DE-863 |
| Summary: | The increasing demand in electronic portability imposes low power consumption as a key metric to analog and digital circuit design. Tunnel FET (TFET) devices have been explored mostly in digital circuits, showing promising results for ultra-low power and energy efficient circuit applications. The TFET presents a low inverse sub-threshold slope (SS) that allows a low leakage energy consumption, desirable in many digital circuits, especially memories. In this book, the TFET is explored as an alternative technology also for ultra-low power and voltage conversion and management circuits, suitable for weak energy harvesting (EH) sources. The TFET distinct electrical characteristics under reverse bias conditions require changes in conventional circuit topologies. In this book, ultra-low input power conversion circuits based on TFETs are designed and analyzed, evaluating their performance as rectifiers, charge pumps and power management circuits (PMC) for RF and DC EH sources. |
| Physical Description: | 1 online resource |
| ISBN: | 9788793609754 8793609752 8793609760 9788793609761 9781003339892 1003339891 9781000796452 1000796450 9781000792799 100079279X |
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| 245 | 1 | 0 | |a Ultra-low input power conversion circuits based on tunnel FETs / |c David Cavalheiro, Francesc Moll, Stanimir Valtchev. |
| 264 | 1 | |a Gistrup, Denmark : |b River Publishers, |c [2018] | |
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| 505 | 0 | |a Front Cover; Half Title Page; RIVER PUBLISHERS SERIES IN CIRCUITS AND SYSTEMS; Title Page; Copyright Page; Dedication Page; Contents; Preface; Acknowledgments; List of Figures; List of Tables; Chapter 1 -- Introduction; 1.1 The Technology Scaling Roadmap so far; 1.2 New Solutions for Future Technology Nodes; 1.3 Energy Harvesting in a More than Moore era; 1.4 Tunnel FETs as a Key Technology for Energy Harvesting; 1.5 Topics Addressed in This Book; 1.6 Book Structure; References; Chapter 2 -- Tunnel FET: State of the Art; 2.1 The Tunneling Phenomenon; 2.2 Band-to-Band Tunneling (BTBT) Current. | |
| 505 | 8 | |a 2.3 From Tunnel Diode to Gated p-i-n Structure2.3.1 First Observations of Tunneling in Gated Structures; 2.3.2 Structural Improvements for Boosted Performance; 2.3.3 Tunnel FET Evolution over the Past Decades; 2.3.4 Directions for Further Improvements in Tunneling Devices; 2.3.5 A Brief Discussion of the Tunneling Device State of the Art; References; Chapter 3 -- Tunnel FET: Physical Properties; 3.1 Thermionic Injection vs. BTBT; 3.2 Impact of Physical Properties in the TFET Performance; 3.2.1 Device Structure and Applied Model; 3.2.2 Dielectric Permittivity, EOT, and Body Thickness Impact. | |
| 505 | 8 | |a 3.2.3 Impact of Doping in Drain and Source Regions of Si-TFET3.2.4 Impact of Materials in a Double-gate TFET; 3.2.5 Impact of Doping in Drain and Source Regions for TFETs with Different Materials; 3.3 Chapter Summary; References; Chapter 4 -- Tunnel FET: Electrical Properties; 4.1 Tunnel FET Models for SPICE Simulations; 4.1.1 Analytic TFET Model; 4.1.2 TFET Model Based on Lookup Tables; 4.2 Electrical Characteristics of TFETs; 4.2.1 Input Characteristics of TFETs; 4.2.2 Output Characteristics of TFETs; 4.2.3 Intrinsic Capacitance of TFETs; 4.3 TFETs in Digital Design. | |
| 505 | 8 | |a 4.4 TFETs in Analog Design4.5 TFETs' Circuit Layout Issues and Extra-parasitics; 4.6 Chapter Summary; References; Chapter 5 -- Tunnel FET-based Charge Pumps; 5.1 Motivation; 5.2 Problems Associated with TFETs in Charge Pumps; 5.3 Circuit-level Solutions for Reverse-biased TFETs; 5.4 Proposed TFET-based Charge Pump; 5.5 Capacitance Optimization of Charge-pump Stage; 5.6 Charge Pumps' Performance Comparison; 5.7 Chapter Summary; References; Chapter 6 -- Tunnel FET-based Rectifiers; 6.1 Motivation; 6.2 State-of-the-art TFET-based Rectifier; 6.3 Advantages of Tunnel FETs in Rectifiers. | |
| 505 | 8 | |a 6.4 Drawbacks of Tunnel FETs in Rectifiers6.5 Proposed Tunnel FET-based Rectifier; 6.6 Optimization of the Proposed Rectifier; 6.7 Performance Comparison of Rectifiers; 6.8 Chapter Summary; References; Chapter 7 -- TFET-based Power-management Circuit for RF Energy Harvesting; 7.1 Motivation; 7.2 Challenges in RF Power Transport; 7.3 Proposed TFET-based PMC; 7.3.1 Startup Circuit; 7.3.2 Boost Circuit; 7.3.2.1 Challenges in TFET-based boost-converter design; 7.3.2.2 Advantages of TFETs in PMC and boost converters; 7.3.3 Controller Circuit; 7.4 Simulation Results; 7.5 Chapter Summary; References. | |
| 505 | 8 | |a Chapter 8 -- TFET-based Power-management Circuit for Nanowatt DC Energy-Harvesting Sources. | |
| 588 | 0 | |a Print version record. | |
| 520 | |a The increasing demand in electronic portability imposes low power consumption as a key metric to analog and digital circuit design. Tunnel FET (TFET) devices have been explored mostly in digital circuits, showing promising results for ultra-low power and energy efficient circuit applications. The TFET presents a low inverse sub-threshold slope (SS) that allows a low leakage energy consumption, desirable in many digital circuits, especially memories. In this book, the TFET is explored as an alternative technology also for ultra-low power and voltage conversion and management circuits, suitable for weak energy harvesting (EH) sources. The TFET distinct electrical characteristics under reverse bias conditions require changes in conventional circuit topologies. In this book, ultra-low input power conversion circuits based on TFETs are designed and analyzed, evaluating their performance as rectifiers, charge pumps and power management circuits (PMC) for RF and DC EH sources. | ||
| 545 | 0 | |a David Cavalheiro, Francesc Moll, Stanimir Valtchev | |
| 650 | 0 | |a Digital electronics |x Design and construction. | |
| 650 | 0 | |a Low voltage integrated circuits. |0 http://id.loc.gov/authorities/subjects/sh95004622 | |
| 650 | 6 | |a Circuits intégrés à faible consommation. | |
| 650 | 7 | |a TECHNOLOGY & ENGINEERING |x Mechanical. |2 bisacsh | |
| 650 | 7 | |a SCIENCE / Energy |2 bisacsh | |
| 650 | 7 | |a TECHNOLOGY / Electronics / Microelectronics |2 bisacsh | |
| 650 | 7 | |a Digital electronics |x Design and construction |2 fast | |
| 650 | 7 | |a Low voltage integrated circuits |2 fast | |
| 700 | 1 | |a Moll, Francesc. |1 https://id.oclc.org/worldcat/entity/E39PBJyhfpBQt98MpPCJMxkdQq |0 http://id.loc.gov/authorities/names/n2003014120 | |
| 700 | 1 | |a Valtchev, Stanimir. | |
| 758 | |i has work: |a Ultra-low input power conversion circuits based on tunnel FETs (Text) |1 https://id.oclc.org/worldcat/entity/E39PCG8TRFPHpq837G8Qy4XHfm |4 https://id.oclc.org/worldcat/ontology/hasWork | ||
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Record in the Search Index
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|---|---|
| _version_ | 1829095278910636032 |
| adam_text | |
| any_adam_object | |
| author | Cavalheiro, David |
| author2 | Moll, Francesc Valtchev, Stanimir |
| author2_role | |
| author2_variant | f m fm s v sv |
| author_GND | http://id.loc.gov/authorities/names/n2003014120 |
| author_facet | Cavalheiro, David Moll, Francesc Valtchev, Stanimir |
| author_role | |
| author_sort | Cavalheiro, David |
| author_variant | d c dc |
| building | Verbundindex |
| bvnumber | localFWS |
| callnumber-first | T - Technology |
| callnumber-label | TK7868 |
| callnumber-raw | TK7868.D5 C38 2018 |
| callnumber-search | TK7868.D5 C38 2018 |
| callnumber-sort | TK 47868 D5 C38 42018 |
| callnumber-subject | TK - Electrical and Nuclear Engineering |
| collection | ZDB-4-EBA |
| contents | Front Cover; Half Title Page; RIVER PUBLISHERS SERIES IN CIRCUITS AND SYSTEMS; Title Page; Copyright Page; Dedication Page; Contents; Preface; Acknowledgments; List of Figures; List of Tables; Chapter 1 -- Introduction; 1.1 The Technology Scaling Roadmap so far; 1.2 New Solutions for Future Technology Nodes; 1.3 Energy Harvesting in a More than Moore era; 1.4 Tunnel FETs as a Key Technology for Energy Harvesting; 1.5 Topics Addressed in This Book; 1.6 Book Structure; References; Chapter 2 -- Tunnel FET: State of the Art; 2.1 The Tunneling Phenomenon; 2.2 Band-to-Band Tunneling (BTBT) Current. 2.3 From Tunnel Diode to Gated p-i-n Structure2.3.1 First Observations of Tunneling in Gated Structures; 2.3.2 Structural Improvements for Boosted Performance; 2.3.3 Tunnel FET Evolution over the Past Decades; 2.3.4 Directions for Further Improvements in Tunneling Devices; 2.3.5 A Brief Discussion of the Tunneling Device State of the Art; References; Chapter 3 -- Tunnel FET: Physical Properties; 3.1 Thermionic Injection vs. BTBT; 3.2 Impact of Physical Properties in the TFET Performance; 3.2.1 Device Structure and Applied Model; 3.2.2 Dielectric Permittivity, EOT, and Body Thickness Impact. 3.2.3 Impact of Doping in Drain and Source Regions of Si-TFET3.2.4 Impact of Materials in a Double-gate TFET; 3.2.5 Impact of Doping in Drain and Source Regions for TFETs with Different Materials; 3.3 Chapter Summary; References; Chapter 4 -- Tunnel FET: Electrical Properties; 4.1 Tunnel FET Models for SPICE Simulations; 4.1.1 Analytic TFET Model; 4.1.2 TFET Model Based on Lookup Tables; 4.2 Electrical Characteristics of TFETs; 4.2.1 Input Characteristics of TFETs; 4.2.2 Output Characteristics of TFETs; 4.2.3 Intrinsic Capacitance of TFETs; 4.3 TFETs in Digital Design. 4.4 TFETs in Analog Design4.5 TFETs' Circuit Layout Issues and Extra-parasitics; 4.6 Chapter Summary; References; Chapter 5 -- Tunnel FET-based Charge Pumps; 5.1 Motivation; 5.2 Problems Associated with TFETs in Charge Pumps; 5.3 Circuit-level Solutions for Reverse-biased TFETs; 5.4 Proposed TFET-based Charge Pump; 5.5 Capacitance Optimization of Charge-pump Stage; 5.6 Charge Pumps' Performance Comparison; 5.7 Chapter Summary; References; Chapter 6 -- Tunnel FET-based Rectifiers; 6.1 Motivation; 6.2 State-of-the-art TFET-based Rectifier; 6.3 Advantages of Tunnel FETs in Rectifiers. 6.4 Drawbacks of Tunnel FETs in Rectifiers6.5 Proposed Tunnel FET-based Rectifier; 6.6 Optimization of the Proposed Rectifier; 6.7 Performance Comparison of Rectifiers; 6.8 Chapter Summary; References; Chapter 7 -- TFET-based Power-management Circuit for RF Energy Harvesting; 7.1 Motivation; 7.2 Challenges in RF Power Transport; 7.3 Proposed TFET-based PMC; 7.3.1 Startup Circuit; 7.3.2 Boost Circuit; 7.3.2.1 Challenges in TFET-based boost-converter design; 7.3.2.2 Advantages of TFETs in PMC and boost converters; 7.3.3 Controller Circuit; 7.4 Simulation Results; 7.5 Chapter Summary; References. Chapter 8 -- TFET-based Power-management Circuit for Nanowatt DC Energy-Harvesting Sources. |
| ctrlnum | (OCoLC)1049818681 |
| dewey-full | 621.381 |
| dewey-hundreds | 600 - Technology (Applied sciences) |
| dewey-ones | 621 - Applied physics |
| dewey-raw | 621.381 |
| dewey-search | 621.381 |
| dewey-sort | 3621.381 |
| dewey-tens | 620 - Engineering and allied operations |
| discipline | Elektrotechnik / Elektronik / Nachrichtentechnik |
| format | Electronic eBook |
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Stanimir Valtchev.</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="a">Gistrup, Denmark :</subfield><subfield code="b">River Publishers,</subfield><subfield code="c">[2018]</subfield></datafield><datafield tag="300" ind1=" " ind2=" "><subfield code="a">1 online resource</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">computer</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">online resource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="490" ind1="1" ind2=" "><subfield code="a">River Publishers series in circuits and systems</subfield></datafield><datafield tag="505" ind1="0" ind2=" "><subfield code="a">Front Cover; Half Title Page; RIVER PUBLISHERS SERIES IN CIRCUITS AND SYSTEMS; Title Page; Copyright Page; Dedication Page; Contents; Preface; Acknowledgments; List of Figures; List of Tables; Chapter 1 -- Introduction; 1.1 The Technology Scaling Roadmap so far; 1.2 New Solutions for Future Technology Nodes; 1.3 Energy Harvesting in a More than Moore era; 1.4 Tunnel FETs as a Key Technology for Energy Harvesting; 1.5 Topics Addressed in This Book; 1.6 Book Structure; References; Chapter 2 -- Tunnel FET: State of the Art; 2.1 The Tunneling Phenomenon; 2.2 Band-to-Band Tunneling (BTBT) Current.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">2.3 From Tunnel Diode to Gated p-i-n Structure2.3.1 First Observations of Tunneling in Gated Structures; 2.3.2 Structural Improvements for Boosted Performance; 2.3.3 Tunnel FET Evolution over the Past Decades; 2.3.4 Directions for Further Improvements in Tunneling Devices; 2.3.5 A Brief Discussion of the Tunneling Device State of the Art; References; Chapter 3 -- Tunnel FET: Physical Properties; 3.1 Thermionic Injection vs. BTBT; 3.2 Impact of Physical Properties in the TFET Performance; 3.2.1 Device Structure and Applied Model; 3.2.2 Dielectric Permittivity, EOT, and Body Thickness Impact.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">3.2.3 Impact of Doping in Drain and Source Regions of Si-TFET3.2.4 Impact of Materials in a Double-gate TFET; 3.2.5 Impact of Doping in Drain and Source Regions for TFETs with Different Materials; 3.3 Chapter Summary; References; Chapter 4 -- Tunnel FET: Electrical Properties; 4.1 Tunnel FET Models for SPICE Simulations; 4.1.1 Analytic TFET Model; 4.1.2 TFET Model Based on Lookup Tables; 4.2 Electrical Characteristics of TFETs; 4.2.1 Input Characteristics of TFETs; 4.2.2 Output Characteristics of TFETs; 4.2.3 Intrinsic Capacitance of TFETs; 4.3 TFETs in Digital Design.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">4.4 TFETs in Analog Design4.5 TFETs' Circuit Layout Issues and Extra-parasitics; 4.6 Chapter Summary; References; Chapter 5 -- Tunnel FET-based Charge Pumps; 5.1 Motivation; 5.2 Problems Associated with TFETs in Charge Pumps; 5.3 Circuit-level Solutions for Reverse-biased TFETs; 5.4 Proposed TFET-based Charge Pump; 5.5 Capacitance Optimization of Charge-pump Stage; 5.6 Charge Pumps' Performance Comparison; 5.7 Chapter Summary; References; Chapter 6 -- Tunnel FET-based Rectifiers; 6.1 Motivation; 6.2 State-of-the-art TFET-based Rectifier; 6.3 Advantages of Tunnel FETs in Rectifiers.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">6.4 Drawbacks of Tunnel FETs in Rectifiers6.5 Proposed Tunnel FET-based Rectifier; 6.6 Optimization of the Proposed Rectifier; 6.7 Performance Comparison of Rectifiers; 6.8 Chapter Summary; References; Chapter 7 -- TFET-based Power-management Circuit for RF Energy Harvesting; 7.1 Motivation; 7.2 Challenges in RF Power Transport; 7.3 Proposed TFET-based PMC; 7.3.1 Startup Circuit; 7.3.2 Boost Circuit; 7.3.2.1 Challenges in TFET-based boost-converter design; 7.3.2.2 Advantages of TFETs in PMC and boost converters; 7.3.3 Controller Circuit; 7.4 Simulation Results; 7.5 Chapter Summary; References.</subfield></datafield><datafield tag="505" ind1="8" ind2=" "><subfield code="a">Chapter 8 -- TFET-based Power-management Circuit for Nanowatt DC Energy-Harvesting Sources.</subfield></datafield><datafield tag="588" ind1="0" ind2=" "><subfield code="a">Print version record.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">The increasing demand in electronic portability imposes low power consumption as a key metric to analog and digital circuit design. Tunnel FET (TFET) devices have been explored mostly in digital circuits, showing promising results for ultra-low power and energy efficient circuit applications. The TFET presents a low inverse sub-threshold slope (SS) that allows a low leakage energy consumption, desirable in many digital circuits, especially memories. In this book, the TFET is explored as an alternative technology also for ultra-low power and voltage conversion and management circuits, suitable for weak energy harvesting (EH) sources. The TFET distinct electrical characteristics under reverse bias conditions require changes in conventional circuit topologies. 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| id | ZDB-4-EBA-on1049818681 |
| illustrated | Illustrated |
| indexdate | 2025-04-11T08:46:29Z |
| institution | BVB |
| isbn | 9788793609754 8793609752 8793609760 9788793609761 9781003339892 1003339891 9781000796452 1000796450 9781000792799 100079279X |
| language | English |
| oclc_num | 1049818681 |
| open_access_boolean | |
| owner | MAIN DE-862 DE-BY-FWS DE-863 DE-BY-FWS |
| owner_facet | MAIN DE-862 DE-BY-FWS DE-863 DE-BY-FWS |
| physical | 1 online resource |
| psigel | ZDB-4-EBA FWS_PDA_EBA ZDB-4-EBA |
| publishDate | 2018 |
| publishDateSearch | 2018 |
| publishDateSort | 2018 |
| publisher | River Publishers, |
| record_format | marc |
| series | River Publishers series in circuits and systems. |
| series2 | River Publishers series in circuits and systems |
| spelling | Cavalheiro, David. Ultra-low input power conversion circuits based on tunnel FETs / David Cavalheiro, Francesc Moll, Stanimir Valtchev. Gistrup, Denmark : River Publishers, [2018] 1 online resource text txt rdacontent computer c rdamedia online resource cr rdacarrier River Publishers series in circuits and systems Front Cover; Half Title Page; RIVER PUBLISHERS SERIES IN CIRCUITS AND SYSTEMS; Title Page; Copyright Page; Dedication Page; Contents; Preface; Acknowledgments; List of Figures; List of Tables; Chapter 1 -- Introduction; 1.1 The Technology Scaling Roadmap so far; 1.2 New Solutions for Future Technology Nodes; 1.3 Energy Harvesting in a More than Moore era; 1.4 Tunnel FETs as a Key Technology for Energy Harvesting; 1.5 Topics Addressed in This Book; 1.6 Book Structure; References; Chapter 2 -- Tunnel FET: State of the Art; 2.1 The Tunneling Phenomenon; 2.2 Band-to-Band Tunneling (BTBT) Current. 2.3 From Tunnel Diode to Gated p-i-n Structure2.3.1 First Observations of Tunneling in Gated Structures; 2.3.2 Structural Improvements for Boosted Performance; 2.3.3 Tunnel FET Evolution over the Past Decades; 2.3.4 Directions for Further Improvements in Tunneling Devices; 2.3.5 A Brief Discussion of the Tunneling Device State of the Art; References; Chapter 3 -- Tunnel FET: Physical Properties; 3.1 Thermionic Injection vs. BTBT; 3.2 Impact of Physical Properties in the TFET Performance; 3.2.1 Device Structure and Applied Model; 3.2.2 Dielectric Permittivity, EOT, and Body Thickness Impact. 3.2.3 Impact of Doping in Drain and Source Regions of Si-TFET3.2.4 Impact of Materials in a Double-gate TFET; 3.2.5 Impact of Doping in Drain and Source Regions for TFETs with Different Materials; 3.3 Chapter Summary; References; Chapter 4 -- Tunnel FET: Electrical Properties; 4.1 Tunnel FET Models for SPICE Simulations; 4.1.1 Analytic TFET Model; 4.1.2 TFET Model Based on Lookup Tables; 4.2 Electrical Characteristics of TFETs; 4.2.1 Input Characteristics of TFETs; 4.2.2 Output Characteristics of TFETs; 4.2.3 Intrinsic Capacitance of TFETs; 4.3 TFETs in Digital Design. 4.4 TFETs in Analog Design4.5 TFETs' Circuit Layout Issues and Extra-parasitics; 4.6 Chapter Summary; References; Chapter 5 -- Tunnel FET-based Charge Pumps; 5.1 Motivation; 5.2 Problems Associated with TFETs in Charge Pumps; 5.3 Circuit-level Solutions for Reverse-biased TFETs; 5.4 Proposed TFET-based Charge Pump; 5.5 Capacitance Optimization of Charge-pump Stage; 5.6 Charge Pumps' Performance Comparison; 5.7 Chapter Summary; References; Chapter 6 -- Tunnel FET-based Rectifiers; 6.1 Motivation; 6.2 State-of-the-art TFET-based Rectifier; 6.3 Advantages of Tunnel FETs in Rectifiers. 6.4 Drawbacks of Tunnel FETs in Rectifiers6.5 Proposed Tunnel FET-based Rectifier; 6.6 Optimization of the Proposed Rectifier; 6.7 Performance Comparison of Rectifiers; 6.8 Chapter Summary; References; Chapter 7 -- TFET-based Power-management Circuit for RF Energy Harvesting; 7.1 Motivation; 7.2 Challenges in RF Power Transport; 7.3 Proposed TFET-based PMC; 7.3.1 Startup Circuit; 7.3.2 Boost Circuit; 7.3.2.1 Challenges in TFET-based boost-converter design; 7.3.2.2 Advantages of TFETs in PMC and boost converters; 7.3.3 Controller Circuit; 7.4 Simulation Results; 7.5 Chapter Summary; References. Chapter 8 -- TFET-based Power-management Circuit for Nanowatt DC Energy-Harvesting Sources. Print version record. The increasing demand in electronic portability imposes low power consumption as a key metric to analog and digital circuit design. Tunnel FET (TFET) devices have been explored mostly in digital circuits, showing promising results for ultra-low power and energy efficient circuit applications. The TFET presents a low inverse sub-threshold slope (SS) that allows a low leakage energy consumption, desirable in many digital circuits, especially memories. In this book, the TFET is explored as an alternative technology also for ultra-low power and voltage conversion and management circuits, suitable for weak energy harvesting (EH) sources. The TFET distinct electrical characteristics under reverse bias conditions require changes in conventional circuit topologies. In this book, ultra-low input power conversion circuits based on TFETs are designed and analyzed, evaluating their performance as rectifiers, charge pumps and power management circuits (PMC) for RF and DC EH sources. David Cavalheiro, Francesc Moll, Stanimir Valtchev Digital electronics Design and construction. Low voltage integrated circuits. http://id.loc.gov/authorities/subjects/sh95004622 Circuits intégrés à faible consommation. TECHNOLOGY & ENGINEERING Mechanical. bisacsh SCIENCE / Energy bisacsh TECHNOLOGY / Electronics / Microelectronics bisacsh Digital electronics Design and construction fast Low voltage integrated circuits fast Moll, Francesc. https://id.oclc.org/worldcat/entity/E39PBJyhfpBQt98MpPCJMxkdQq http://id.loc.gov/authorities/names/n2003014120 Valtchev, Stanimir. has work: Ultra-low input power conversion circuits based on tunnel FETs (Text) https://id.oclc.org/worldcat/entity/E39PCG8TRFPHpq837G8Qy4XHfm https://id.oclc.org/worldcat/ontology/hasWork Print version: Cavalheiro, David. Ultra-low input power conversion circuits based on tunnel EETs. Gistrup, Denmark : River Publishers, [2018] 9788793609754 River Publishers series in circuits and systems. http://id.loc.gov/authorities/names/no2016146406 |
| spellingShingle | Cavalheiro, David Ultra-low input power conversion circuits based on tunnel FETs / River Publishers series in circuits and systems. Front Cover; Half Title Page; RIVER PUBLISHERS SERIES IN CIRCUITS AND SYSTEMS; Title Page; Copyright Page; Dedication Page; Contents; Preface; Acknowledgments; List of Figures; List of Tables; Chapter 1 -- Introduction; 1.1 The Technology Scaling Roadmap so far; 1.2 New Solutions for Future Technology Nodes; 1.3 Energy Harvesting in a More than Moore era; 1.4 Tunnel FETs as a Key Technology for Energy Harvesting; 1.5 Topics Addressed in This Book; 1.6 Book Structure; References; Chapter 2 -- Tunnel FET: State of the Art; 2.1 The Tunneling Phenomenon; 2.2 Band-to-Band Tunneling (BTBT) Current. 2.3 From Tunnel Diode to Gated p-i-n Structure2.3.1 First Observations of Tunneling in Gated Structures; 2.3.2 Structural Improvements for Boosted Performance; 2.3.3 Tunnel FET Evolution over the Past Decades; 2.3.4 Directions for Further Improvements in Tunneling Devices; 2.3.5 A Brief Discussion of the Tunneling Device State of the Art; References; Chapter 3 -- Tunnel FET: Physical Properties; 3.1 Thermionic Injection vs. BTBT; 3.2 Impact of Physical Properties in the TFET Performance; 3.2.1 Device Structure and Applied Model; 3.2.2 Dielectric Permittivity, EOT, and Body Thickness Impact. 3.2.3 Impact of Doping in Drain and Source Regions of Si-TFET3.2.4 Impact of Materials in a Double-gate TFET; 3.2.5 Impact of Doping in Drain and Source Regions for TFETs with Different Materials; 3.3 Chapter Summary; References; Chapter 4 -- Tunnel FET: Electrical Properties; 4.1 Tunnel FET Models for SPICE Simulations; 4.1.1 Analytic TFET Model; 4.1.2 TFET Model Based on Lookup Tables; 4.2 Electrical Characteristics of TFETs; 4.2.1 Input Characteristics of TFETs; 4.2.2 Output Characteristics of TFETs; 4.2.3 Intrinsic Capacitance of TFETs; 4.3 TFETs in Digital Design. 4.4 TFETs in Analog Design4.5 TFETs' Circuit Layout Issues and Extra-parasitics; 4.6 Chapter Summary; References; Chapter 5 -- Tunnel FET-based Charge Pumps; 5.1 Motivation; 5.2 Problems Associated with TFETs in Charge Pumps; 5.3 Circuit-level Solutions for Reverse-biased TFETs; 5.4 Proposed TFET-based Charge Pump; 5.5 Capacitance Optimization of Charge-pump Stage; 5.6 Charge Pumps' Performance Comparison; 5.7 Chapter Summary; References; Chapter 6 -- Tunnel FET-based Rectifiers; 6.1 Motivation; 6.2 State-of-the-art TFET-based Rectifier; 6.3 Advantages of Tunnel FETs in Rectifiers. 6.4 Drawbacks of Tunnel FETs in Rectifiers6.5 Proposed Tunnel FET-based Rectifier; 6.6 Optimization of the Proposed Rectifier; 6.7 Performance Comparison of Rectifiers; 6.8 Chapter Summary; References; Chapter 7 -- TFET-based Power-management Circuit for RF Energy Harvesting; 7.1 Motivation; 7.2 Challenges in RF Power Transport; 7.3 Proposed TFET-based PMC; 7.3.1 Startup Circuit; 7.3.2 Boost Circuit; 7.3.2.1 Challenges in TFET-based boost-converter design; 7.3.2.2 Advantages of TFETs in PMC and boost converters; 7.3.3 Controller Circuit; 7.4 Simulation Results; 7.5 Chapter Summary; References. Chapter 8 -- TFET-based Power-management Circuit for Nanowatt DC Energy-Harvesting Sources. Digital electronics Design and construction. Low voltage integrated circuits. http://id.loc.gov/authorities/subjects/sh95004622 Circuits intégrés à faible consommation. TECHNOLOGY & ENGINEERING Mechanical. bisacsh SCIENCE / Energy bisacsh TECHNOLOGY / Electronics / Microelectronics bisacsh Digital electronics Design and construction fast Low voltage integrated circuits fast |
| subject_GND | http://id.loc.gov/authorities/subjects/sh95004622 |
| title | Ultra-low input power conversion circuits based on tunnel FETs / |
| title_auth | Ultra-low input power conversion circuits based on tunnel FETs / |
| title_exact_search | Ultra-low input power conversion circuits based on tunnel FETs / |
| title_full | Ultra-low input power conversion circuits based on tunnel FETs / David Cavalheiro, Francesc Moll, Stanimir Valtchev. |
| title_fullStr | Ultra-low input power conversion circuits based on tunnel FETs / David Cavalheiro, Francesc Moll, Stanimir Valtchev. |
| title_full_unstemmed | Ultra-low input power conversion circuits based on tunnel FETs / David Cavalheiro, Francesc Moll, Stanimir Valtchev. |
| title_short | Ultra-low input power conversion circuits based on tunnel FETs / |
| title_sort | ultra low input power conversion circuits based on tunnel fets |
| topic | Digital electronics Design and construction. Low voltage integrated circuits. http://id.loc.gov/authorities/subjects/sh95004622 Circuits intégrés à faible consommation. TECHNOLOGY & ENGINEERING Mechanical. bisacsh SCIENCE / Energy bisacsh TECHNOLOGY / Electronics / Microelectronics bisacsh Digital electronics Design and construction fast Low voltage integrated circuits fast |
| topic_facet | Digital electronics Design and construction. Low voltage integrated circuits. Circuits intégrés à faible consommation. TECHNOLOGY & ENGINEERING Mechanical. SCIENCE / Energy TECHNOLOGY / Electronics / Microelectronics Digital electronics Design and construction Low voltage integrated circuits |
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